Showing 1–4 of 4 results for author: Mader, K A

Localization and band-gap pinning in semiconductor superlattices with layer-thickness fluctuations

Authors: K. A. Mader, A. Zunger

Abstract: We consider (AlAs)_n/(GaAs)_n superlattices with random thickness fluctuations Delta-n around the nominal period n. Using three-dimensional pseudopotential plane-wave band theory, we show that (i) any amount Delta-n/n of thickness fluctuations leads to band-edge wavefunction localization, (ii) for small Delta-n/n the SL band gap is pinned at the gap level produced by a single layer with ``wrong'… ▽ More We consider (AlAs)_n/(GaAs)_n superlattices with random thickness fluctuations Delta-n around the nominal period n. Using three-dimensional pseudopotential plane-wave band theory, we show that (i) any amount Delta-n/n of thickness fluctuations leads to band-edge wavefunction localization, (ii) for small Delta-n/n the SL band gap is pinned at the gap level produced by a single layer with ``wrong'' thickness n + Delta-n, (iii) the bound states due to monolayer thickness fluctuations lead to significant band-gap reductions, (iv) <001> AlAs/GaAs SL's with monolayer thickness fluctuations have a direct band gap, while the ideal <001> SL's are indirect for n<4. △ Less

Submitted 27 July, 1995; originally announced July 1995.

Comments: 10 pages, Revtex. 3 figures available at http://www.cecam.fr/~mader/elstruc.html . Published in Europhys. Lett. 31, 107 (95)

Electronic structure of intentionally disordered AlAs/GaAs superlattices

Authors: K. A. Mader, L. -W. Wang, A. Zunger

Abstract: We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a d… ▽ More We use realistic pseudopotentials and a plane-wave basis to study the electronic structure of non-periodic, three-dimensional, 2000-atom (AlAs)_n/(GaAs)_m (001) superlattices, where the individual layer thicknesses n,m = {1,2,3} are randomly selected. We find that while the band gap of the equivalent (n = m = 2) ordered superlattice is indirect, random fluctuations in layer thicknesses lead to a direct gap in the planar Brillouin zone, strong wavefunction localization along the growth direction, short radiative lifetimes, and a significant band-gap reduction, in agreement with experiments on such intentionally grown disordered superlattices. △ Less

Submitted 24 January, 1995; v1 submitted 23 January, 1995; originally announced January 1995.

Comments: 10 pages, REVTeX and EPSF macros, 4 figures in postscript. e-mail to [email protected]

Effects of atomic clustering on the optical properties of III-V alloys

Authors: Kurt A. Mader, Alex Zunger

Abstract: Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and Al(0.5)In(0.5)As alloys. We find that clustering can reduce the direct band gap of these alloys by as much as 100 meV. Furthermore, sufficiently strong clustering is predict… ▽ More Self-consistent electronic structure calculations together with a structural model are used to study the effect of short-range atomic order on the optical properties of otherwise random Al(0.5)Ga(0.5)As, Ga(0.5)In(0.5)P, and Al(0.5)In(0.5)As alloys. We find that clustering can reduce the direct band gap of these alloys by as much as 100 meV. Furthermore, sufficiently strong clustering is predicted to transform Al(0.5)Ga(0.5)As into a direct gap material. △ Less

Submitted 5 April, 1994; originally announced April 1994.

Comments: 6 pages, REVTEX 3.0, one postscript figure appended. TP-451-6221, to be published in Appl. Phys. Lett. (1994)

Electronic Structure and Bonding in Epitaxially Stabilized Cubic Iron Silicides

Authors: K. A. Mader, H. von Kanel, A. Baldereschi

Abstract: We present an ab initio full-potential linearized augmented plane-wave (FLAPW) study of the structural and electronic properties of the two bulk unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which have recently been grown by molecular beam epitaxy on Si(111). We obtain equilibrium bulk lattice constants of 2.72 Å and 5.32 Å for FeSi and FeSi$_2$, respectively. The den… ▽ More We present an ab initio full-potential linearized augmented plane-wave (FLAPW) study of the structural and electronic properties of the two bulk unstable compounds FeSi (CsCl structure) and FeSi$_2$ (CaF$_2$ structure) which have recently been grown by molecular beam epitaxy on Si(111). We obtain equilibrium bulk lattice constants of 2.72 Å and 5.32 Å for FeSi and FeSi$_2$, respectively. The density of states (DOS) of FeSi agrees well with experiment, and shows metallic behavior. In agreement with a previous calculation the DOS of FeSi$_2$ shows a large density of $d$-states at the Fermi level, explaining the instability of the bulk phase. The electron charge distributions reveal a small charge transfer from Si to Fe atomic spheres in both compounds. While in FeSi the Fe-Si bond is indeed partially ionic, we show that in FeSi$_2$ the electron distribution corresponds to a covalent charge accumulation in the Fe-Si bond region. The reversed order of $d$-bands in FeSi with respect to FeSi$_2$ is understood in terms of crystal field splitting and Fe-Fe nearest neighbor $dd$-interactions in the CsCl structure, and a strong Si $p$/Fe $d$ bonding in the fluorite structure, respectively. △ Less

Submitted 11 May, 1993; originally announced May 1993.

Comments: 15 pages, REVTeX 3.0