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Developing fractional quantum Hall states at even-denominator fillings 1/6 and 1/8
Authors:
Chengyu Wang,
P. T. Madathil,
S. K. Singh,
A. Gupta,
Y. J. Chung,
L. N. Pfeiffer,
K. W. Baldwin,
M. Shayegan
Abstract:
In the extreme quantum limit, when the Landau level filling factor $ν<1$, the dominant electron-electron interaction in low-disorder two-dimensional electron systems leads to exotic many-body phases. The ground states at even-denominator $ν=$ 1/2 and 1/4 are typically Fermi seas of composite fermions carrying two and four flux quanta, surrounded by the Jain fractional quantum Hall states (FQHSs) a…
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In the extreme quantum limit, when the Landau level filling factor $ν<1$, the dominant electron-electron interaction in low-disorder two-dimensional electron systems leads to exotic many-body phases. The ground states at even-denominator $ν=$ 1/2 and 1/4 are typically Fermi seas of composite fermions carrying two and four flux quanta, surrounded by the Jain fractional quantum Hall states (FQHSs) at odd-denominator fillings $ν=p/(2p\pm1)$ and $ν=p/(4p\pm1)$, where $p$ is an integer. For $ν<$ 1/5, an insulating behavior, which is generally believed to signal the formation of a pinned Wigner crystal, is seen. Our experiments on ultrahigh-quality, dilute, GaAs two-dimensional electron systems reveal developing FQHSs at $ν=p/(6p\pm1)$ and $ν=p/(8p\pm1)$, manifested by magnetoresistance minima superimposed on the insulating background. In stark contrast to $ν=$ 1/2 and 1/4, however, we observe a pronounced, sharp minimum in magnetoresistance at $ν=$ 1/6 and a somewhat weaker minimum at $ν=$ 1/8, suggesting developing FQHSs, likely stabilized by the pairing of composite fermions that carry six and eight flux quanta. Our results signal the unexpected entry, in ultrahigh-quality samples, of FQHSs at even-denominator fillings 1/6 and 1/8, which are likely to harbor non-Abelian anyon excitations.
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Submitted 24 February, 2025;
originally announced February 2025.
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Developing fractional quantum Hall states at $ν$ = $\dfrac{1}{7}$ and $\dfrac{2}{11}$ in the presence of significant Landau level mixing
Authors:
Siddharth Kumar Singh,
A. Gupta,
P. T. Madathil,
C. Wang,
K. W. Baldwin,
L. N. Pfeiffer,
M. Shayegan
Abstract:
Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($ν$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute GaAs 2D electron systems (2DESs), strong evidence was reported for FQHSs at $ν=1/7, 2/13$ and 2/11 which fall in the $ν= p/(6p\pm1)$ Jain series of FQHSs, interprete…
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Termination of the fractional quantum Hall states (FQHSs) and the emergence of Wigner crystal phases at very small Landau level filling factors ($ν$) have been of continued interest for decades. Recently, in ultra-high-quality, dilute GaAs 2D electron systems (2DESs), strong evidence was reported for FQHSs at $ν=1/7, 2/13$ and 2/11 which fall in the $ν= p/(6p\pm1)$ Jain series of FQHSs, interpreted as integer ($p = 1$, 2) QHSs of 6-flux composite fermions ($^6$CFs). These states are surrounded by strongly-insulating phases which are generally believed to be Wigner crystals. Here, we study an ultra-high-quality 2DES confined to an AlAs quantum well where the 2D electrons have a much larger effective mass ($m^*\simeq 0.45 m_e$) and a smaller dielectric constant ($ε\simeq10ε_0$) compared to GaAs 2D electrons ($m^*\simeq 0.067 m_e$ and $ε\simeq13ε_0$). This combination of $m^*$ and $ε$ renders the Landau level mixing parameter $κ$, defined as the ratio of the Coulomb and cyclotron energies, $\simeq 9$ times larger in AlAs 2DESs ($κ\propto m^*/ε$). Qualitatively similar to the GaAs 2DESs, we observe an insulating behavior reentrant around a strong $ν=1/5$ FQHS, and extending to $ν<1/5$. Additionally, we observe a clear minimum in magnetoresistance at $ν=2/11$, and an inflection point at $ν=1/7$ which is very reminiscent of the first report of an emerging FQHS at $ν=1/7$ in GaAs 2DESs. The data provide evidence for developing QHSs of $^6$CFs at very small fillings. This is very surprising because $κ$ near $ν\simeq 1/6$ in our sample is very large ($\simeq4$), and larger $κ$ has the tendency to favor Wigner crystal states over FQHSs at small fillings. Our data should inspire calculations that accurately incorporate $κ$ in competing many-body phases of $^6$CFs at extremely small fillings near $ν=1/6$.
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Submitted 6 November, 2024; v1 submitted 29 October, 2024;
originally announced October 2024.
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Origin of pinning disorder in magnetic-field-induced Wigner solids
Authors:
Matthew L. Freeman,
P. T. Madathil,
L. N. Pfeiffer,
K. W. Baldwin,
Y. J. Chung,
R. Winkler,
M. Shayegan,
L. W. Engel
Abstract:
At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown.…
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At low Landau level filling factors ($ν$), Wigner solid phases of two-dimensional electron systems in GaAs are pinned by disorder, and exhibit a pinning mode, whose frequency is a measure of the disorder that pins the Wigner solid. Despite numerous studies spanning the last three decades, the origin of the disorder that causes the pinning and determines the pinning mode frequency remains unknown. Here we present a study of the pinning mode resonance in the low-$ν$ Wigner solid phases of a series of ultralow-disorder GaAs quantum wells which are similar except for their varying well widths, $d$. The pinning mode frequencies,$f_p$, decrease strongly as $d$ increases, with the widest well exhibiting $f_p$ as low as $\simeq$35 MHz. The amount of reduction of \fp\ with increasing $d$ can be explained remarkably well by tails of the wave function impinging into the alloy-disordered Al$_x$Ga$_{1-x}$As barriers that contain the electrons. However, it is imperative that the model for the confinement and wave function includes the Coulomb repulsion in the growth direction between the electrons as they occupy the quantum well.
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Submitted 10 April, 2024;
originally announced April 2024.
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Signatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
Authors:
P. T. Madathil,
C. Wang,
S. K. Singh,
A. Gupta,
K. A. Villegas Rosales,
Y. J. Chung,
K. W. West,
K. W. Baldwin,
L. N. Pfeiffer,
L. W. Engel,
M. Shayegan
Abstract:
Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's mos…
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Low-disorder two-dimensional electron systems in the presence of a strong, perpendicular magnetic field terminate at very small Landau level filling factors in a Wigner crystal (WC), where the electrons form an ordered array to minimize the Coulomb repulsion. The nature of this exotic, many-body, quantum phase is yet to be fully understood and experimentally revealed. Here we probe one of WC's most fundamental parameters, namely the energy gap that determines its low-temperature conductivity, in record-mobility, ultra-high-purity, two-dimensional electrons confined to GaAs quantum wells. The WC domains in these samples contain $\simeq$ 1000 electrons. The measured gaps are a factor of three larger than previously reported for lower quality samples, and agree remarkably well with values predicted for the lowest-energy, intrinsic, hyper-corelated bubble defects in a WC made of flux-electron composite fermions, rather than bare electrons. The agreement is particularly noteworthy, given that the calculations are done for disorder-free composite fermion WCs, and there are no adjustable parameters. The results reflect the exceptionally high quality of the samples, and suggest that composite fermion WCs are indeed more stable compared to their electron counterparts.
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Submitted 12 March, 2024;
originally announced March 2024.
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Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system
Authors:
P. T. Madathil,
K. A. Villegas Rosales,
Y. J. Chung,
K. W. West,
K. W. Baldwin,
L. N. Pfeiffer,
L. W. Engel,
M. Shayegan
Abstract:
In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics…
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In low-disorder, two-dimensional electron systems (2DESs), the fractional quantum Hall states at very small Landau level fillings ($ν$) terminate in a Wigner solid (WS) phase, where electrons arrange themselves in a periodic array. The WS is typically pinned by the residual disorder sites and manifests an insulating behavior, with non-linear current-voltage (\textit{I-V}) and noise characteristics. We report here, measurements on an ultra-low-disorder, dilute 2DES, confined to a GaAs quantum well. In the $ν< 1/5$ range, superimposed on a highly-insulating longitudinal resistance, the 2DES exhibits a developing fractional quantum Hall state at $ν=1/7$, attesting to its exceptional high quality, and dominance of electron-electron interaction in the low filling regime. In the nearby insulating phases, we observe remarkable non-linear \textit{I-V} and noise characteristics as a function of increasing current, with current thresholds delineating three distinct phases of the WS: a pinned phase (P1) with very small noise, a second phase (P2) in which $dV/dI$ fluctuates between positive and negative values and is accompanied by very high noise, and a third phase (P3) where $dV/dI$ is nearly constant and small, and noise is about an order of magnitude lower than in P2. In the depinned (P2 and P3) phases, the noise spectrum also reveals well-defined peaks at frequencies that vary linearly with the applied current, suggestive of washboard frequencies. We discuss the data in light of a recent theory that proposes different dynamic phases for a driven WS.
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Submitted 24 January, 2024;
originally announced January 2024.
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Fractional Quantum Hall State at Filling Factor $ν=1/4$ in Ultra-High-Quality GaAs 2D Hole Systems
Authors:
Chengyu Wang,
A. Gupta,
S. K. Singh,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. Baldwin,
R. Winkler,
M. Shayegan
Abstract:
Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality…
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Single-component fractional quantum Hall states (FQHSs) at even-denominator filling factors may host non-Abelian quasiparticles that are considered to be building blocks of topological quantum computers. Such states, however, are rarely observed in the lowest-energy Landau level, namely at filling factors $ν<1$. Here we report evidence for an even-denominator FQHS at $ν=1/4$ in ultra-high-quality two-dimensional hole systems confined to modulation-doped GaAs quantum wells. We observe a deep minimum in the longitudinal resistance at $ν=1/4$, superimposed on a highly insulating background, suggesting a close competition between the $ν=1/4$ FQHS and the magnetic-field-induced, pinned Wigner solid states. Our experimental observations are consistent with the very recent theoretical calculations which predict that substantial Landau level mixing, caused by the large hole effective mass, can induce composite fermion pairing and lead to a non-Abelian FQHS at $ν=1/4$. Our results demonstrate that Landau level mixing can provide a very potent means for tuning the interaction between composite fermions and creating new non-Abelian FQHSs.
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Submitted 22 November, 2023;
originally announced November 2023.
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Delocalization and Universality of the Fractional Quantum Hall Plateau-to-Plateau Transitions
Authors:
P. T. Madathil,
K. A. Villegas Rosales,
C. T. Tai,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimental…
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Disorder and electron-electron interaction play essential roles in the physics of electron systems in condensed matter. In two-dimensional, quantum Hall systems, extensive studies of disorder-induced localization have led to the emergence of a scaling picture with a single extended state, characterized by a power-law divergence of the localization length in the zero-temperature limit. Experimentally, scaling has been investigated via measuring the temperature dependence of plateau-to-plateau transitions between the integer quantum Hall states (IQHSs), yielding a critical exponent $κ\simeq 0.42$. Here we report scaling measurements in the fractional quantum Hall state (FQHS) regime where interaction plays a dominant role. Our study is partly motivated by recent calculations, based on the composite fermion theory, that suggest identical critical exponents in both IQHS and FQHS cases to the extent that the interaction between composite fermions is negligible. The samples used in our experiments are two-dimensional electron systems confined to GaAs quantum wells of exceptionally high quality. We find that $κ$ varies for transitions between different FQHSs observed on the flanks of Landau level filling factor $ν=1/2$, and has a value close to that reported for the IQHS transitions only for a limited number of transitions between high-order FQHSs with intermediate strength. We discuss possible origins of the non-universal $κ$ observed in our experiments.
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Submitted 6 June, 2023;
originally announced June 2023.
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Composite Fermion Mass
Authors:
K. A. Villegas Rosales,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental propert…
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Composite fermions (CFs), exotic quasi-particles formed by pairing an electron and an even number of magnetic flux quanta emerge at high magnetic fields in an interacting electron system, and can explain phenomena such as the fractional quantum Hall state (FQHS) and other many-body phases. CFs possess an effective mass ($m_{CF}$) whose magnitude is inversely related to the most fundamental property of a FQHS, namely its energy gap. We present here experimental measurements of $m_{CF}$ in ultra-high quality two-dimensional electron systems confined to GaAs quantum wells of varying thickness. An advantage of measuring $m_{CF}$ over gap measurements is that mass values are insensitive to disorder and are therefore ideal for comparison with theoretical calculations, especially for high-order FQHS. Our data reveal that $m_{CF}$ increases with increasing well width, reflecting a decrease in the energy gap as the electron layer becomes thicker and the in-plane Coulomb energy softens. Comparing our measured masses with available theoretical results, we find significant quantitative discrepancies, highlighting that more rigorous and accurate calculations are needed to explain the experimental data.
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Submitted 16 July, 2022;
originally announced July 2022.
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Correlated states of 2D electrons near the Landau level filling $ν=1/7$
Authors:
Yoon Jang Chung,
D. Graf,
L. W. Engel,
K. A. Villegas Rosales,
P. T. Madathil,
K. W. Baldwin,
K. W. West,
L. N. Pfeiffer,
M. Shayegan
Abstract:
The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density…
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The ground state of two-dimensional electron systems (2DESs) at low Landau level filling factors ($ν\lesssim1/6$) has long been a topic of interest and controversy in condensed matter. Following the recent breakthrough in the quality of ultra-high-mobility GaAs 2DESs, we revisit this problem experimentally and investigate the impact of reduced disorder. In a GaAs 2DES sample with density $n=6.1\times10^{10}$ /cm$^2$ and mobility $μ=25\times10^6$ cm$^2$/Vs, we find a deep minimum in the longitudinal magnetoresistance ($R_{xx}$) at $ν=1/7$ when $T\simeq104$ mK. There is also a clear sign of a developing minimum in the $R_{xx}$ at $ν=2/13$. While insulating phases are still predominant when $ν\lesssim1/6$, these minima strongly suggest the existence of fractional quantum Hall states at filling factors that comply with the Jain sequence $ν=p/(2mp\pm1)$ even in the very low Landau level filling limit. The magnetic field dependent activation energies deduced from the relation $R_{xx}\propto e^{E_A/2kT}$ corroborate this view, and imply the presence of pinned Wigner solid states when $ν\neq p/(2mp\pm1)$. Similar results are seen in another sample with a lower density, further generalizing our observations.
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Submitted 20 March, 2022;
originally announced March 2022.
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Fractional quantum Hall effect energy gap: role of electron layer thickness
Authors:
K. A. Villegas Rosales,
P. T. Madathil,
Y. J. Chung,
L. N. Pfeiffer,
K. W. West,
K. W. Baldwin,
M. Shayegan
Abstract:
The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally mea…
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The fractional quantum Hall effect (FQHE) stands as a quintessential manifestation of an interacting two-dimensional electron system. One of FQHE's most fundamental characteristics is the energy gap separating the incompressible ground state from its excitations. Yet, despite nearly four decades of investigations, a quantitative agreement between the theoretically calculated and experimentally measured energy gaps is lacking. Here we report a quantitative comparison between the measured energy gaps and the available theoretical calculations that take into account the role of finite layer thickness and Landau level mixing. Our systematic experimental study of the FQHE energy gaps uses very high-quality two-dimensional electron systems confined to GaAs quantum wells with varying well widths. All the measured energy gaps fall bellow the calculations, but as the electron layer thickness increases, the results of experiments and calculations come closer. Accounting for the role of disorder in a phenomenological manner, we find the measured energy gaps to be in reasonable quantitative agreement with calculations, although some discrepancies remain.
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Submitted 6 April, 2021;
originally announced April 2021.
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Ultra-high quality two-dimensional electron systems
Authors:
Yoon Jang Chung,
K. A. Villegas-Rosales,
K. W. Baldwin,
P. T. Madathil,
K. W. West,
M. Shayegan,
L. N. Pfeiffer
Abstract:
Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra…
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Two-dimensional electrons confined to GaAs quantum wells are hallmark platforms for probing electron-electron interaction. Many key observations have been made in these systems as sample quality improved over the years. Here, we present a breakthrough in sample quality via source-material purification and innovation in GaAs molecular beam epitaxy vacuum chamber design. Our samples display an ultra-high mobility of $44\times10^6$ cm$^2$/Vs at an electron density of $2.0\times10^{11}$ /cm$^2$. These results imply only 1 residual impurity for every $10^{10}$ Ga/As atoms. The impact of such low impurity concentration is manifold. Robust stripe/bubble phases are observed, and several new fractional quantum Hall states emerge. Furthermore, the activation gap of the $ν=5/2$ state, which is widely believed to be non-Abelian and of potential use for topological quantum computing, reaches $Δ\simeq820$ mK. We expect that our results will stimulate further research on interaction-driven physics in a two-dimensional setting and significantly advance the field.
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Submitted 19 April, 2021; v1 submitted 5 October, 2020;
originally announced October 2020.
