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A compact and sustainable electronic module for silicon photomultipliers
Authors:
A. Sadigov,
S. Nuruyev,
R. Akbarov,
D. B. Berikov,
A. Madadzada,
A. Mammadli
Abstract:
This article presents the development of a cost-effective and efficient electronic module for silicon photomultipliers (SiPM). The electronic module combines essential functionalities, such as a high voltage power supply, a preamplifier, and a signal comparator, into a compact circuit. A high voltage power supply with a range of 30 to 140 V provides a stable bias voltage with 0.01 V accuracy for t…
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This article presents the development of a cost-effective and efficient electronic module for silicon photomultipliers (SiPM). The electronic module combines essential functionalities, such as a high voltage power supply, a preamplifier, and a signal comparator, into a compact circuit. A high voltage power supply with a range of 30 to 140 V provides a stable bias voltage with 0.01 V accuracy for the SiPMs, while a preamplifier with 40 gain and 250 MHz bandwidth enables signal amplification necessary to extract weak signals. The comparator converts an analogue signal (higher than 8 mV) into TTL (transistor-transistor logic), which makes it easy to process and analyze with digital devices such as microcontrollers or make it possible to send signals over long distances by a cable. The module has been tested using an LYSO scintillator and a SiPM called a micropixel avalanche photodiode (MAPD). It provides a more effective and efficient solution for reading out signals from SiPMs in a variety of applications, delivering reliable and accurate results in real-time.
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Submitted 6 September, 2023;
originally announced September 2023.
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Portable neutron/gamma scintillation detector for status monitoring of accelerator-driven neutron source IREN
Authors:
S. Nuruyev,
D. Berikov,
R. Akbarov,
G. Ahmadov,
F. Ahmadov,
A. Sadigov,
M. Holik,
J. Naghiyev,
A. Madadzada,
K. Udovichenko
Abstract:
Accelerator-driven system (ADS) facilities world-wide opens new opportunities for nuclear physics investigations, so that a high flux of neutrons through spallation reactions can be produced at these facilities. It is known that the measurement, continuous monitoring and optimization of the particle accelerator beam intensity are among the most important actions in the operation of such facilities…
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Accelerator-driven system (ADS) facilities world-wide opens new opportunities for nuclear physics investigations, so that a high flux of neutrons through spallation reactions can be produced at these facilities. It is known that the measurement, continuous monitoring and optimization of the particle accelerator beam intensity are among the most important actions in the operation of such facilities. Considering this point of view, this paper presents a neutron/gamma counter based on a micropixel avalanche photodiode (MAPD) and a plastic scintillator that monitors the status of the accelerator-driven intense resonance neutron source (IREN) facility by measuring the neutron-gamma intensity in the target hall. The electronics of the modular neutron counter has been designed and developed, including a bias voltage source (up to 130 V), a preamplifier (36 gain) and discriminator (>10 mV) circuit. The last product of MAPD (operation voltage- 55 V, PDE- 33 %, total number of pixels- 136900) was used as a photon readout from a plastic scintillator. The sensitive area of MAPD was 3.7*3.7 mm2 and the size of the plastic scintillator 3.7*3.7*30 mm3. The measurement was carried out in the IREN target hall, where it was necessary to monitor not only high neutron fluxes, but also gamma quanta. The experimental results demonstrated a dependence between the count rate of the detector and the frequency of the accelerator, which ranges from 2 to 50 Hz.
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Submitted 26 April, 2023;
originally announced April 2023.
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Variation of TiO2/SiO2 mixed layers induced by different Xe+ ion energies
Authors:
Tran Van Phuc,
Miroslaw Kulik,
Afag Madadzada,
Dorota. Kolodynska,
Le Hong Khiem,
Phan Luong Tuan,
Nguyen Ngoc Anh
Abstract:
The broadening and optical parameters of TiO2/SiO2 transition layers depending on the ion energy have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Ellipstrometry Spectroscopy (ES) methods. The TiO2/SiO2 samples were irradiated by Xe+ ions with energies of 100, 150, 200 and 250 keV. The depth profiles of the elements determined by the RBS spectra show the structure a…
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The broadening and optical parameters of TiO2/SiO2 transition layers depending on the ion energy have been investigated using the Rutherford Backscattering Spectrometry (RBS) and Ellipstrometry Spectroscopy (ES) methods. The TiO2/SiO2 samples were irradiated by Xe+ ions with energies of 100, 150, 200 and 250 keV. The depth profiles of the elements determined by the RBS spectra show the structure and thickness of the TiO2/SiO2 transition layers before and after implantation. We have found that the thickness of the transition region between the TiO2 and SiO2 layers increases with the increasing incident ion energy. This phenomenon indicates an increasing amount of atomic mixing at the TiO2/SiO2 interface. In addition, the variation of transition layers could be explained by defect depth profiles and ions energy transferred in the mixed layers by means of SRIM calculations. The thickness obtained from the RBS is in good agreement with that measured using the ES method. Based on these obtained results, we have also investigated the optical constants of implanted and non-implanted TiO2/SiO2 structures. The wave forms measured with varying incident angles suggest that the measurements were made close to near the main principle point. The yields of ψand δbands vary at different incident angles, is associated with interference processes of the light reflected from the structures examined. The refractive index and the extinction coefficient were found to increase after implantation taking place up to 200-keV Xe and then decrease at 250 keV.
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Submitted 3 September, 2020;
originally announced September 2020.
