Showing 1–37 of 37 results for author: MacManus-Driscoll, J L

Atomic resolution imaging of 3D crystallography in functional oxide thin films

Authors: Ian MacLaren, Aurys Silinga, Juri Barthel, Josee Kleibeuker, Judith L MacManus-Driscoll, Christopher S Allen, Angus I Kirkland

Abstract: Whilst atomic resolution imaging in the scanning transmission electron microscope (STEM) has revolutionized science and technology, it cannot see things happening out of the plane of the image and merely forms projection images. In this article we show that it is possible to directly map the direction and magnitude of atom displacements at 30° to the imaging plane in a La2CoMnO6 thin film on (111)… ▽ More Whilst atomic resolution imaging in the scanning transmission electron microscope (STEM) has revolutionized science and technology, it cannot see things happening out of the plane of the image and merely forms projection images. In this article we show that it is possible to directly map the direction and magnitude of atom displacements at 30° to the imaging plane in a La2CoMnO6 thin film on (111) LSAT (LaAlO3-(Sr,Ta)AlO3) using a 4-dimensional scanning transmission electron microscopy (4DSTEM) methodology. The interpretation is backed up by analysis of theoretical simulations. We reveal that the b-axis always lies in the plane of interface in every area we looked at, and that the atom modulation is strongly suppressed close to the epitaxial interface. This crystallographic detail was not previously revealed or visible by conventional STEM imaging and the new methodology sheds a lot more light on why this particular substrate in this orientation best promotes double perovskite cation ordering and consequently the best achieved magnetic ordering in this thin film system. This approach of fitting atomic resolution 4DSTEM data to determine crystal parameters opens the door for a new era of atomic-resolution crystallography. △ Less

Submitted 20 December, 2024; originally announced December 2024.

Ferroelectricity and resistive switching in BaTiO$_3$ thin films with liquid electrolyte top contact for bioelectronic devices

Authors: Maximilian T. Becker, Poppy Oldroyd, Nives Strkalj, Moritz L. Müller, George G. Malliaras, Judith L. MacManus-Driscoll

Abstract: We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a ferroelectric microelectrode in bioelectronics. The BTO films are grown by pulsed laser deposition (PLD) on semiconducting Nb-doped (0.5 wt\%) SrTiO$_{3}$ (Nb:STO) single c… ▽ More We investigate ferroelectric- and resistive switching behavior in 18-nm-thick epitaxial BaTiO$_3$ (BTO) films in a model electrolyte-ferroelectric-semiconductor (EFS) configuration. The system is explored for its potential as a ferroelectric microelectrode in bioelectronics. The BTO films are grown by pulsed laser deposition (PLD) on semiconducting Nb-doped (0.5 wt\%) SrTiO$_{3}$ (Nb:STO) single crystal substrates. The ferroelectric properties of the bare BTO films are demonstrated by piezoresponse force microscopy (PFM) measurements. Cyclic voltammetry (CV) measurements in EFS configuration, with phosphate buffered saline (PBS) acting as the liquid electrolyte top contact, indicate characteristic ferroelectric switching peaks in the bipolar current-voltage loop. The ferroelectric nature of the observed switching peaks is confirmed by analyzing the current response of the EFS devices to unipolar voltage signals. Moreover, electrochemical impedance spectroscopy (EIS) measurements indicate bipolar resisitive switching behavior of the EFS devices, which is controlled by the remanent polarization state of the BTO layer. Our results represent a constitutive step towards the realization of neuroprosthetic implants and hybrid neurocomputational systems based on ferroelectric microelectrodes. △ Less

Submitted 16 September, 2022; originally announced September 2022.

Local Symmetry Breaking Drives Picosecond Spin Domain Formation in Polycrystalline Semiconducting Films

Authors: Arjun Ashoka, Satyawan Nagane, Nives Strkalj, Bart Roose, Jooyoung Sung, Judith L. MacManus-Driscoll, Samuel D. Stranks, Sascha Feldmann, Akshay Rao

Abstract: Photoinduced spin-charge interconversion in semiconductors with spin-orbit coupling could provide a route to optically addressable spintronics without the use of external magnetic fields. A central question is whether the resulting spin-associated charge currents are robust to structural disorder, which is inherent to polycrystalline semiconductors that are desirable for device applications. Using… ▽ More Photoinduced spin-charge interconversion in semiconductors with spin-orbit coupling could provide a route to optically addressable spintronics without the use of external magnetic fields. A central question is whether the resulting spin-associated charge currents are robust to structural disorder, which is inherent to polycrystalline semiconductors that are desirable for device applications. Using femtosecond circular polarization-resolved pump-probe microscopy on polycrystalline halide perovskite thin films, we observe the photoinduced ultrafast formation of spin-polarized positive and, unexpectedly, negative spin domains on the micron scale formed through lateral currents. Further, the polarization of these domains and lateral transport direction is switched upon switching the polarization of the pump helicity. Micron scale variations in the intensity of optical second-harmonic generation and vertical piezoresponse suggest that the spin domain formation is driven by the presence of strong local inversion symmetry breaking via inter-grain structural disorder. We propose that this leads to spatially varying Rashba-like spin textures that drive spin-momentum locked currents, leading to local spin accumulation. Our results establish ultrafast spin domain formation in polycrystalline semiconductors as a new optically addressable platform for nanoscale spin-device physics. △ Less

Submitted 6 July, 2022; originally announced July 2022.

Ferrotronics for the creation of band gaps in Graphene

Authors: Qifang Wan, Zhuocong Xiao, Ahmed Kursumovic, Judith. L. MacManus-Driscoll, Colm Durkan

Abstract: We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of graphene deposited on a ferroelectric substrate which encodes a periodic surface potential achieved through domain engineering. This structure takes advantage of t… ▽ More We experimentally demonstrate a simple graphene/ ferrolectric device, termed Ferrotronic (electronic effect from ferroelectric) device in which the band-structure of single-layer graphene is modified. The device architecture consists of graphene deposited on a ferroelectric substrate which encodes a periodic surface potential achieved through domain engineering. This structure takes advantage of the nature of conduction through graphene to modulate the Fermi velocity of the charge carriers by the variations in surface potential, leading to the emergence of energy mini-bands and a band gap at the superlattice Brillouin zone boundary. Our work represents a simple route to building circuits whose functionality is controlled by the underlying substrate. △ Less

Submitted 14 December, 2021; originally announced December 2021.

Comments: 11 pages, 4 figures

Tuneable vertical hysteresis loop shift in Ni80Fe20/SrRuO3 heterostructures

Authors: Manisha Bansal, Samir Kumar Giri, Weiwei Li, Judith L. MacManus-Driscoll, Tuhin Maity

Abstract: A novel vertical hysteresis loop shift is observed for a bilayer thin film of Ni80Fe20/SrRuO3 (1:2 thickness ratio) on SrTiO3 substrate, after field cooled through the Curie temperature ~125 K of SrRuO3, whereas no shift is found for zero field cooled measurement. The vertical shift is noticed below ~125 K which increases with decreasing temperature and reaches a maximum of 33% at 2 K. The vertica… ▽ More A novel vertical hysteresis loop shift is observed for a bilayer thin film of Ni80Fe20/SrRuO3 (1:2 thickness ratio) on SrTiO3 substrate, after field cooled through the Curie temperature ~125 K of SrRuO3, whereas no shift is found for zero field cooled measurement. The vertical shift is noticed below ~125 K which increases with decreasing temperature and reaches a maximum of 33% at 2 K. The vertical shift is modelled closely using micromagnetic simulations. It is shown that the amount of vertical shift depends on the competition between the relative thicknesses and the anisotropies of the two films governed by Spring Thickness law and Imperial Law, respectively. We propose a generalized model of vertical shift which is applicable for other material systems, and hence could be informative for use of vertical shift in future spintronic devices. △ Less

Submitted 28 August, 2021; originally announced August 2021.

Comments: 9 pages, 13 Figures

Route to High-Performance Micro-solid Oxide Fuel Cells on Metallic Substrates

Authors: Matthew P. Wells, Adam J. Lovett, Thomas Chalklen, Federico Baiutti, Albert Tarancon, Xuejing Wang, Jie Ding, Haiyan Wang, Sohini Kar-Narayan, Sohini Kar-Narayan, Matias Acosta, Judith L. MacManus-Driscoll

Abstract: Micro-solid oxide fuel cells based on thin films have strong potential for use in portable power devices. However, devices based on silicon substrates typically involve thin-film metallic electrodes which are unstable at high temperatures. Devices based on bulk metal substrates overcome these limitations, though performance is hindered by the challenge of growing state-of-the-art epitaxial materia… ▽ More Micro-solid oxide fuel cells based on thin films have strong potential for use in portable power devices. However, devices based on silicon substrates typically involve thin-film metallic electrodes which are unstable at high temperatures. Devices based on bulk metal substrates overcome these limitations, though performance is hindered by the challenge of growing state-of-the-art epitaxial materials on metals. Here, we demonstrate for the first time the growth of epitaxial cathode materials on metal substrates (stainless steel) commercially supplied with epitaxial electrolyte layers (1.5 {um (Y2O3)0.15(ZrO2)0.85 (YSZ) + 50 nm CeO2). We create epitaxial mesoporous cathodes of (La0.60Sr0.40)0.95Co0.20Fe0.80O3 (LSCF) on the substrate by growing LSCF/MgO vertically aligned nanocomposite films by pulsed laser deposition, followed by selectively etching out the MgO. To enable valid comparison with the literature, the cathodes are also grown on single-crystal substrates, confirming state-of-the-art performance with an area specific resistance of 100ohmegacm2 at 500dC and activation energy down to 0.97 eV. The work marks an important step toward the commercialization of high-performance micro-solid oxide fuel cells for portable power applications. △ Less

Submitted 27 May, 2021; originally announced May 2021.

Journal ref: ACS Appl. Mater. Interfaces 2021, 13, 3, 4117 4125

Strong pinning at high growth rates in Rare Earth Barium Cuprate

Authors: J. Feighan, M. H. Lai, A. Kursumovic, D. Zhang, H. Wang, J. H. Lee, S Moon, J. L. MacManus-Driscoll

Abstract: We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP… ▽ More We present a simple liquid assisted processing (LAP) method, to be used in-situ during pulsed laser deposition growth to give both rapid growth rates (50 Hz deposition leading to >250 nm/min with a single plume) and strong pinning (improved x 5-10 over plain standard YBCO films grown at similar rates). Achieving these two important features simultaneously has been a serious bottleneck to date. LAP enhances the kinetics of the film growth so that good crystalline perfection can be achieved at up to 60 x faster growth rates than normal, while also enabling artificial pinning centres to be self assembled into fine nanocolumns. In addition, LAP allows for RE mixing (80% of Y with 20% of Yb, Sm, or Yb+Sm), creating effective point-like disorder within the REBCO lattice and which leads to strongly improved pinning at 30 K and below. Overall, LAP is a simple method which could be adopted by other in-situ physical or vapour deposition methods (i.e PLD, MOCVD, evaporation, etc) to significantly enhance both growth rate and performance. △ Less

Submitted 16 November, 2020; v1 submitted 2 November, 2020; originally announced November 2020.

Comments: This version has been removed by arXiv administrators as the submitter did not have the legal right to agree to the license at the time of submission

Identifying and reducing interfacial losses to enhance color-pure electroluminescence in blue-emitting perovskite nanoplatelet light-emitting diodes

Authors: Robert L. Z. Hoye, May-Ling Lai, Miguel Anaya, Yu Tong, Krzysztof Gałkowski, Tiarnan Doherty, Weiwei Li, Tahmida N. Huq, Sebastian Mackowski, Lakshminarayana Polavarapu, Jochen Feldmann, Judith L. MacManus-Driscoll, Richard H. Friend, Alexander S. Urban, Samuel D. Stranks

Abstract: Perovskite nanoplatelets (NPls) hold great promise for light-emitting applications, having achieved high photoluminescence quantum efficiencies (PLQEs) approaching unity in the blue wavelength range, where other metal-halide perovskites have typically been ineffective. However, the external quantum efficiency (EQE) of blue-emitting NPl light-emitting diodes (LEDs) have only reached 0.12%, with typ… ▽ More Perovskite nanoplatelets (NPls) hold great promise for light-emitting applications, having achieved high photoluminescence quantum efficiencies (PLQEs) approaching unity in the blue wavelength range, where other metal-halide perovskites have typically been ineffective. However, the external quantum efficiency (EQE) of blue-emitting NPl light-emitting diodes (LEDs) have only reached 0.12%, with typical values well below 0.1%. In this work, we show that the performance of NPl LEDs is primarily hindered by a poor electronic interface between the emitter and hole-injector. Through Kelvin Probe and X-ray photoemission spectroscopy measurements, we reveal that the NPls have remarkably deep ionization potentials (>=6.5 eV), leading to large barriers for hole injection, as well as substantial non-radiative decay at the interface between the emitter and hole-injector. We find that an effective way to reduce these non-radiative losses is by using poly(triarylamine) interlayers. This results in an increase in the EQE of our blue LEDs emitting at 464 nm wavelength to 0.3%. We find that our results can be generalized to thicker sky-blue-emitting NPls, where we increase the EQE to 0.55% using the poly(triarylamine) interlayer. Our work also identifies the key challenges for further efficiency increases. △ Less

Submitted 28 October, 2020; originally announced October 2020.

Journal ref: ACS Energy Lett. 2019, 4, 5, 1181

Materials Informatics Reveals Unexplored Structure Space in Cuprate Superconductors

Authors: Rhys E. A. Goodall, Bonan Zhu, Judith L. MacManus-Driscoll, Alpha A. Lee

Abstract: High-temperature superconducting cuprates have the potential to be transformative in a wide range of energy applications. In this work we analyse the corpus of historical data about cuprates using materials informatics and re-examine how their structures are related to their critical temperatures (Tc). The available data is highly clustered and no single database contains all the features of inter… ▽ More High-temperature superconducting cuprates have the potential to be transformative in a wide range of energy applications. In this work we analyse the corpus of historical data about cuprates using materials informatics and re-examine how their structures are related to their critical temperatures (Tc). The available data is highly clustered and no single database contains all the features of interest to properly examine trends. To work around these issues we employ a linear calibration approach that allows us to utilise multiple data sources -- combining fine resolution data for which the Tc is unknown with coarse resolution data where it is known. The hybrid data set constructed enables us to explore the trends in Tc with the apical and in-plane copper-oxygen distances. We show that large regions of the materials space have yet to be explored and highlight how novel experiments relying on nano-engineering of the crystal structure may enable us to explore such new regions. Based on the trends identified we propose that single layer Bi-based cuprates are good candidate systems for such experiments. △ Less

Submitted 7 September, 2021; v1 submitted 2 April, 2020; originally announced April 2020.

Printed high-mobility p-type buffer layers on perovskite photovoltaics for efficient semi-transparent devices

Authors: Robert A. Jagt, Tahmida N. Huq, Sam A. Hill, Maung Thway, Tianyuan Liu, Mari Napari, Bart Roose, Krzysztof Gałkowsk, Weiwei Li, Serena Fen Lin, Samuel D. Stranks, Judith L. MacManus-Driscoll, Robert L. Z. Hoye

Abstract: Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has be… ▽ More Perovskite solar cells (PSCs) with transparent electrodes can be integrated with existing solar panels in tandem configurations to increase the power conversion efficiency. A critical layer in semi-transparent PSCs is the inorganic buffer layer, which protects the PSC against damage when the transparent electrode is sputtered on top. The development of n-i-p structured semi-transparent PSCs has been hampered by the lack of suitable p-type buffer layers. In this work we develop a p-type CuOx buffer layer, which can be grown uniformly over the perovskite device without damaging the perovskite or organic charge transport layers, can be grown using industrially scalable techniques and has high hole mobility (4.3 +/- 2 cm2 V-1 s-1), high transmittance (>95%), and a suitable ionisation potential for hole extraction (5.3 +/- 0.2 eV). Semi-transparent PSCs with efficiencies up to 16.7% are achieved using the CuOx buffer layer. Our work demonstrates a new approach to integrate PSCs into tandem configurations, as well as enable the development of other devices that need high quality p-type layers. △ Less

Submitted 21 January, 2020; originally announced January 2020.

Influence of Atomic Roughness at The Uncompensated Fe/CoO (111) Interface on Exchange Bias Effect

Authors: Rui Wu, Mingzhu Xue, Tuhin Maity, Yuxuan Peng, Samir Kumar Giri, Guang Tian, Judith L. MacManus-Driscoll, Jinbo Yang

Abstract: The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer th… ▽ More The effect of interface roughness of ferromagnetic and antiferromagnetic layers on exchange bias is still not well understood. In this report we have investigated the effect of surface roughness in (111)-oriented antiferromagnetic CoO films on exchange bias with ferromagnetic Fe grown on top. The surface roughness is controlled at the atomic scale, over a range below ~ 0.35 nm, by varying layer thickness of the CoO films. It is observed that both exchange bias field ($H_{E}$) and coercivity ($H_{C}$) extensively depend on the atomic scale roughness of the CoO (111) at the interface with Fe film. An opposite dependence of $H_{E}$ and $H_{C}$ on interface roughness was found, which was ascribed to partially compensated spin states induced by the atomic roughness at the fully uncompensated CoO (111) surfaces and was corroborated using the Monte Carlo simulations. Moreover, the onset temperature for $H_{C}$ is found to be up to ~ 80 K below the blocking temperature ($T_{B}$) and the temperature dependence of $H_{C}$ follows the power law with a critical exponent equal to one, which indicates that, in this system, $H_{C}$ is more of an interface-related property than $H_{E}$. △ Less

Submitted 11 January, 2020; v1 submitted 5 January, 2020; originally announced January 2020.

Strong Performance Enhancement in Lead-Halide Perovskite Solar Cells through Rapid, Atmospheric Deposition of n-type Buffer Layer Oxides

Authors: Ravi D. Raninga, Robert A. Jagt, Solène Béchu, Tahmida N. Huq, Mark Nikolka, Yen-Hung Lin, Mengyao Sun, Zewei Li, Wen Li, Muriel Bouttemy, Mathieu Frégnaux, Henry J. Snaith, Philip Schulz, Judith L. MacManus-Driscoll, Robert L. Z. Hoye

Abstract: Thin (approximately 10 nm) oxide buffer layers grown over lead-halide perovskite device stacks are critical for protecting the perovskite against mechanical and environmental damage. However, the limited perovskite stability restricts the processing methods and temperatures (<=110 C) that can be used to deposit the oxide overlayers, with the latter limiting the electronic properties of the oxides… ▽ More Thin (approximately 10 nm) oxide buffer layers grown over lead-halide perovskite device stacks are critical for protecting the perovskite against mechanical and environmental damage. However, the limited perovskite stability restricts the processing methods and temperatures (<=110 C) that can be used to deposit the oxide overlayers, with the latter limiting the electronic properties of the oxides achievable. In this work, we demonstrate an alternative to existing methods that can grow pinhole-free TiOx (x = 2.00+/-0.05) films with the requisite thickness in <1 min without vacuum. This technique is atmospheric pressure chemical vapor deposition (AP-CVD). The rapid but soft deposition enables growth temperatures of >=180 °C to be used to coat the perovskite. This is >=70 °C higher than achievable by current methods and results in more conductive TiOx films, boosting solar cell efficiencies by >2%. Likewise, when AP-CVD SnOx (x ~ 2) is grown on perovskites, there is also minimal damage to the perovskite beneath. The SnOx layer is pinhole-free and conformal, which reduces shunting in devices, and increases steady-state efficiencies from 16.5% (no SnOx) to 19.4% (60 nm SnOx), with fill factors reaching 84%. This work shows AP-CVD to be a versatile technique for growing oxides on thermally-sensitive materials. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: R.D.R and R.A.J contributed equally. 23 pages. 6 figures

Evidence of Rotational Fröhlich Coupling in Polaronic Trions

Authors: Maxim Trushin, Soumya Sarkar, Sinu Mathew, Sreetosh Goswami, Prasana Sahoo, Yan Wang, Jieun Yang, Weiwei Li, Judith L. MacManus-Driscoll, Manish Chhowalla, Shaffique Adam, T. Venkatesan

Abstract: Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich ap… ▽ More Electrons commonly couple through Fröhlich interactions with longitudinal optical phonons to form polarons. However, trions possess a finite angular momentum and should therefore couple instead to rotational optical phonons. This creates a polaronic trion whose binding energy is determined by the crystallographic orientation of the lattice. Here, we demonstrate theoretically within the Fröhlich approach and experimentally by photoluminescence emission that the bare trion binding energy (20 meV) is significantly enhanced by the phonons at the interface between the two-dimensional semiconductor MoS$_2$ and the bulk transition metal oxide SrTiO$_3$. The low-temperature {binding energy} changes from 60 meV in [001]-oriented substrates to 90 meV for [111] orientation, as a result of the counter-intuitive interplay between the rotational axis of the MoS$_2$ trion and that of the SrTiO$_3$ phonon mode. △ Less

Submitted 12 August, 2020; v1 submitted 20 November, 2019; originally announced November 2019.

Comments: 5+ pages (4 figures) + Suppl. Materials (7 figures), to appear in Phys. Rev. Lett. (August 2020)

Journal ref: Phys. Rev. Lett. 125, 086803 (2020)

Topological semimetallic phase in PbO$_2$ promoted by temperature

Authors: Bo Peng, Ivona Bravić, Judith L. MacManus-Driscoll, Bartomeu Monserrat

Abstract: Materials exhibiting topological order host exotic phenomena that could form the basis for novel developments in areas ranging from low-power electronics to quantum computers. The past decade has witnessed multiple experimental realizations and thousands of predictions of topological materials. However, it has been determined that increasing temperature destroys topological order, restricting many… ▽ More Materials exhibiting topological order host exotic phenomena that could form the basis for novel developments in areas ranging from low-power electronics to quantum computers. The past decade has witnessed multiple experimental realizations and thousands of predictions of topological materials. However, it has been determined that increasing temperature destroys topological order, restricting many topological materials to very low temperatures and thus hampering practical applications. Here, we propose a material realization of temperature promoted topological order. We show that a semiconducting oxide that has been widely used in lead-acid batteries, $β$-PbO$_2$, hosts a topological semimetallic phase driven by both thermal expansion and electron-phonon coupling upon increasing temperature. We identify the interplay between the quasi-two-dimensional nature of the charge distribution of the valence band with the three-dimensional nature of the charge distribution of the conduction band as the microscopic mechanism driving this unconventional temperature dependence. Thus, we propose a general principle to search for and design novel topological materials whose topological order is stabilized by increasing temperature. This provides a clear roadmap for taking topological materials from the laboratory to technological devices. △ Less

Submitted 20 September, 2019; originally announced September 2019.

Comments: Accepted manuscript; 7 pages, 4 figures; contains Supplemental Material

Origin of Improved Photoelectrochemical Water Splitting in Mixed Perovskite Oxides

Authors: Weiwei Li, Kai Jiang, Zhongguo Li, Shijing Gong, Robert L. Z. Hoye, Zhigao Hu, Yinglin Song, Chuanmu Tian, Jongkyoung Kim, Kelvin H. L. Zhang, Seungho Cho, Judith L. MacManus-Driscoll

Abstract: Owing to the versatility in their chemical and physical properties, transition metal perovskite oxides have emerged as a new category of highly efficient photocatalysts for photoelectrochemical water splitting. Here, to understand the underlying mechanism for the enhanced photoelectrochemical water splitting in mixed perovskites, we explore ideal epitaxial thin films of the BiFeO3-SrTiO3 system. T… ▽ More Owing to the versatility in their chemical and physical properties, transition metal perovskite oxides have emerged as a new category of highly efficient photocatalysts for photoelectrochemical water splitting. Here, to understand the underlying mechanism for the enhanced photoelectrochemical water splitting in mixed perovskites, we explore ideal epitaxial thin films of the BiFeO3-SrTiO3 system. The electronic struture and carrier dynamics are determined from both experiment and density-functional theory calculations. The intrinsic phenomena are measured in this ideal sytem, contrasting to commonly studied polycrstalline solid solutions where extrinsic structural features obscure the intrinsic phenomena. We determined that when SrTiO3 is added to BiFeO3 the conduction band minimum position is raised and an exponential tail of trap states from hybridized Ti 3d and Fe 3d orbitals emerges near the conduction band edge. The presence of these trap states strongly suppresses the fast electron-hole recombination and improves the photocurrent density in the visible-light region, up to 16 times at 0 VRHE compared to the pure end member compositions. Our work provides a new design approach for optimising the photoelectrochemical performance in mixed perovksite oxides. △ Less

Submitted 24 September, 2018; originally announced September 2018.

Comments: 7 pages and 5 figures

Journal ref: Advanced Energy Materials, 2018

Insulating-to-Conducting Behavior and Band Profile Across the La0.9Ba0.1MnO3/Nb:SrTiO3 Epitaxial Interface

Authors: Weiwei Li, Josee E. Kleibeuker, Rui Wu, Kelvin H. L. Zhang, Chao Yun, Judith L. MacManus-Driscoll

Abstract: La0.9Ba0.1MnO3 is a ferromagnetic insulator in its bulk form, but exhibits metallicity in thin film form. It has a wide potential in a range of spintronic-related applications, and hence it is critical to understand thickness-dependent electronic structure in thin films as well as substrate/film interface effects. Here, using electrical and in-situ photoemission spectroscopy measurements, we repor… ▽ More La0.9Ba0.1MnO3 is a ferromagnetic insulator in its bulk form, but exhibits metallicity in thin film form. It has a wide potential in a range of spintronic-related applications, and hence it is critical to understand thickness-dependent electronic structure in thin films as well as substrate/film interface effects. Here, using electrical and in-situ photoemission spectroscopy measurements, we report the electronic structure and interface band profile of high-quality layer-by-layer-grown La0.9Ba0.1MnO3 on single crystal Nb:SrTiO3 substrates. A transition from insulating-to-conducting was observed with increasing La0.9Ba0.1MnO3 thickness, which was explained by the determined interface band diagram of La0.9Ba0.1MnO3/Nb: SrTiO3, where a type II heterojunction was formed. △ Less

Submitted 30 September, 2017; originally announced October 2017.

Comments: Physical Review B (to be pulished, 2017)

Induced magnetization in La$_{0.7}$Sr$_{0.3}$MnO$_3$/BiFeO$_3$ superlattices

Authors: S. Singh, J. T. Haraldsen, J. Xiong, E. M. Choi, P. Lu, D. Yi, X. -D. Wen, J. Liu, H. Wang, Z. Bi, P. Yu, M. R. Fitzsimmons, J. L. MacManus-Driscoll, R. Ramesh, A. V. Balatsky, Jian-Xin Zhu, Q. X. Jia

Abstract: Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering… ▽ More Using polarized neutron reflectometry (PNR), we observe an induced magnetization of 75$\pm$ 25 kA/m at 10 K in a La$_{0.7}$Sr$_{0.3}$MnO$_3$ (LSMO)/BiFeO$_3$ superlattice extending from the interface through several atomic layers of the BiFeO$_3$ (BFO). The induced magnetization in BFO is explained by density functional theory, where the size of bandgap of BFO plays an important role. Considering a classical exchange field between the LSMO and BFO layers, we further show that magnetization is expected to extend throughout the BFO, which provides a theoretical explanation for the results of the neutron scattering experiment. △ Less

Submitted 2 July, 2014; originally announced July 2014.

Comments: 5 pages, 4 figures, with Supplemental Materials. To appear in Physical Review Letters

Reaction method control of impurity scattering in C-doped MgB2, proving the role of defects besides C substitution level

Authors: S K Chen, K Y Tan, A S Halim, X Xu, K S B De Silva, W K Yeoh, S X Dou, A Kursumovic, J L MacManus-Driscoll

Abstract: In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrai… ▽ More In this study, Si and C were incorporated into polycrystalline MgB2 via in situ reaction of Mg and B with either SiC or with separate Si and C (Si+C). The electrical transport and magnetic properties of the two series of samples were compared. The corrected resistivity at 40K, Rho A(40K), is higher for the SiC reacted samples regardless of carbon (C) substitution level, indicating larger intragrain scattering because of the simultaneous reaction between Mg and SiC and carbon substitution during the formation of MgB2. In addition, because of the cleaner reaction route for the SiC reacted samples, the calculated active area that carries current, AF, is twice that of the (Si+C) samples. On the other hand, the upper critical field, Hc2, was similar for both sets of samples despite their different C substitution levels which proves the importance of defect scattering in addition to C substitution level. Hence, the form of the precursor reactants is critical for tuning the form of Hc2(T). △ Less

Submitted 30 October, 2013; originally announced October 2013.

Comments: accepted for publication

Report number: Supercond. Sci. Technol. 26 125018

Depairing critical current achieved in superconducting thin films with through-thickness arrays of artificial pinning centers

Authors: Rafael B. Dinner, Adam P. Robinson, Stuart C. Wimbush, Judith L. MacManus-Driscoll, Mark G. Blamire

Abstract: Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, Jc, of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, Jc values… ▽ More Large area arrays of through-thickness nanoscale pores have been milled into superconducting Nb thin films via a process utilizing anodized aluminum oxide thin film templates. These pores act as artificial flux pinning centers, increasing the superconducting critical current, Jc, of the Nb films. By optimizing the process conditions including anodization time, pore size and milling time, Jc values approaching and in some cases matching the Ginzburg-Landau depairing current of 30 MA/cm^2 at 5 K have been achieved - a Jc enhancement over as-deposited films of more than 50 times. In the field dependence of Jc, a matching field corresponding to the areal pore density has also been clearly observed. The effect of back-filling the pores with magnetic material has then been investigated. While back-filling with Co has been successfully achieved, the effect of the magnetic material on Jc has been found to be largely detrimental compared to voids, although a distinct influence of the magnetic material in producing a hysteretic Jc versus applied field behavior has been observed. This behavior has been tested for compatibility with currently proposed models of magnetic pinning and found to be most closely explained by a model describing the magnetic attraction between the flux vortices and the magnetic inclusions. △ Less

Submitted 25 February, 2011; v1 submitted 20 November, 2010; originally announced November 2010.

Comments: 9 pages, 10 figures

Journal ref: Supercond. Sci. Technol. 24 (2011) 055017

Practical vortex diodes from pinning enhanced YBa2Cu3O7-d

Authors: S. A. Harrington, J. L. MacManus-Driscoll, J. H. Durrell

Abstract: We identify a scalable, practical route to fabricating a superconducting diode. The device relies for its function on the barrier to flux vortex entry being reduced at the substrate interface of a superconducting pinning enhanced YBa2Cu3O7-d nano-composite film. We show that these composite systems provide a practical route to fabricating a useful superconducting diode and demonstrate the rectif… ▽ More We identify a scalable, practical route to fabricating a superconducting diode. The device relies for its function on the barrier to flux vortex entry being reduced at the substrate interface of a superconducting pinning enhanced YBa2Cu3O7-d nano-composite film. We show that these composite systems provide a practical route to fabricating a useful superconducting diode and demonstrate the rectification of an alternating current. △ Less

Submitted 29 June, 2009; v1 submitted 22 April, 2009; originally announced April 2009.

Comments: Version as accepted by APL

Journal ref: APPLIED PHYSICS LETTERS 95, 022518 (2009)

Superconductor-ferromagnet nanocomposites created by co-deposition of niobium and dysprosium

Authors: Rafael B. Dinner, Suman-Lata Sahonta, Rong Yu, Nadia A. Stelmashenko, Judith L. MacManus-Driscoll, Mark G. Blamire

Abstract: We have created superconductor-ferromagnet composite films in order to test the enhancement of critical current density, Jc, due to magnetic pinning. We co-sputter the type-II superconductor niobium (Nb) and the low-temperature ferromagnet dysprosium (Dy) onto a heated substrate; the immiscibility of the two materials leads to a phase-separated composite of magnetic regions within a superconduct… ▽ More We have created superconductor-ferromagnet composite films in order to test the enhancement of critical current density, Jc, due to magnetic pinning. We co-sputter the type-II superconductor niobium (Nb) and the low-temperature ferromagnet dysprosium (Dy) onto a heated substrate; the immiscibility of the two materials leads to a phase-separated composite of magnetic regions within a superconducting matrix. Over a range of compositions and substrate temperatures, we achieve phase separation on scales from 5 nm to 1 micron. The composite films exhibit simultaneous superconductivity and ferromagnetism. Transport measurements show that while the self-field Jc is reduced in the composites, the in-field Jc is greatly enhanced up to the 3 T saturation field of Dy. In one instance, the phase separation orders into stripes, leading to in-plane anisotropy in Jc. △ Less

Submitted 3 June, 2009; v1 submitted 18 March, 2009; originally announced March 2009.

Comments: 7 pages, 7 figures. Matches the version published in SUST: Added one reference and some discussion in Section 5

Journal ref: R. B. Dinner, S. Sahonta, R. Yu, N. A. Stelmashenko, J. L. MacManus-Driscoll and M. G. Blamire, Supercond. Sci. Technol. 22 (2009) 075001

A new kind of vortex pinning in superconductor / ferromagnet nanocomposites

Authors: A. Palau, H. Parvaneh, N. A. Stelmashenko, H. Wang J. L. Macmanus-Driscoll, M. G. Blamire

Abstract: This paper reports the observation of hysteresis in the vortex pinning in a superconductor / ferromagnetic epitaxial nanocomposite consisting of fcc Gd particles incorporated in a Nb matrix. We show that this hysteretic pinning is associated with magnetic reversal losses in the Gd particles and is fundamentally different in origin to pinning interactions previously observed for ferromagnetic par… ▽ More This paper reports the observation of hysteresis in the vortex pinning in a superconductor / ferromagnetic epitaxial nanocomposite consisting of fcc Gd particles incorporated in a Nb matrix. We show that this hysteretic pinning is associated with magnetic reversal losses in the Gd particles and is fundamentally different in origin to pinning interactions previously observed for ferromagnetic particles or other microstructural features. △ Less

Submitted 4 October, 2006; originally announced October 2006.

Comments: Submitted to PRL

Cross-over between channeling and pinning at twin boundaries in YBa2Cu3O7 thin films

Authors: A. Palau, J. H. Durrell, J. L. MacManus-Driscoll, S. Harrington, T. Puig, F. Sandiumenge, X. Obradors, M. G. Blamire

Abstract: The critical current (Jc) of highly twinned YBa2Cu3O7 films has been measured as a function of temperature, magnetic field and angle. For much of the parameter space we observe a strong suppression of Jc for fields in the twin boundary (TB) directions; this is quantitatively modeled as flux-cutting-mediated vortex channeling. For certain temperatures and fields a cross-over occurs to a regime in… ▽ More The critical current (Jc) of highly twinned YBa2Cu3O7 films has been measured as a function of temperature, magnetic field and angle. For much of the parameter space we observe a strong suppression of Jc for fields in the twin boundary (TB) directions; this is quantitatively modeled as flux-cutting-mediated vortex channeling. For certain temperatures and fields a cross-over occurs to a regime in which channeling is blocked and the TBs act as planar pinning centers so that TB pinning enhances the overall Jc. In this regime, intrinsic pinning along the TBs is comparable to that between the twins. △ Less

Submitted 25 July, 2006; originally announced July 2006.

Comments: Submitted to PRL

Alignment of Carbon Nanotube Additives for Improved Performance of Magnesium Diboride Superconductors

Authors: Shi Xue Dou, Waikong Yeoh, Olga Shcherbakova, David Wexler, Ying Li, Zhong M. Ren, Paul Munroe, Sookien Chen, Kaisin. Tan, Bartek A. Glowacki, Judith L. MacManus-Driscoll

Abstract: The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in magnetic resonant imaging (MRI). Thanks to the lack of weak links and the two-gap superconductivity of MgB2 [2,3] a number of additives have been successfully used… ▽ More The rapid progress on MgB2 superconductor since its discovery[1] has made this material a strong competitor to low and high temperature superconductors (HTS) for applications with a great potential to catch the niche market such as in magnetic resonant imaging (MRI). Thanks to the lack of weak links and the two-gap superconductivity of MgB2 [2,3] a number of additives have been successfully used to enhance the critical current density, Jc and the upper critical field, Hc2.[4-12] Carbon nanotubes (CNTs) have unusually electrical, mechanical and thermal properties[13-16] and hence is an ideal component to fabricate composites for improving their performance. To take advantages of the extraordinary properties of CNTs it is important to align CNTs in the composites. Here we report a method of alignment of CNTs in the CNT/MgB2 superconductor composite wires through a readily scalable drawing technique. The aligned CNT doped MgB2 wires show an enhancement in magnetic Jc(H) by more than an order of magnitude in high magnetic fields, compared to the undoped ones. The CNTs have also significantly enhanced the heat transfer and dissipation. CNTs have been used mainly in structural materials, but here the advantage of their use in functional composites is shown and this has wider ramifications for other functional materials. △ Less

Submitted 21 February, 2006; originally announced February 2006.

Comments: 11 pages, 3 figures. to be published in Advanced Materials

Journal ref: Advanced Materials 18, 785 (2006)

Strong Pinning Enhancement in MgB2 Using Very Small Dy2O3 Additions

Authors: S. K. Chen, M. Wei, J. L. MacManus-Driscoll

Abstract: 0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano… ▽ More 0.5 to 5.0 wt.% Dy2O3 was in-situ reacted with Mg + B to form pinned MgB2. While Tc remained largely unchanged, Jc was strongly enhanced. The best sample (only 0.5 wt.% Dy2O3) had a Jc of 6.5 x 10^5 A/cm^2 at 6K, 1T and 3.5 x 10^5 A/cm^2 at 20K, 1T, around a factor of 4 higher compared to the pure sample, and equivalent to hot-pressed or nano-Si added MgB2 at below 1T. Even distributions of nano-scale precipitates of DyB4 and MgO were observed within the grains. The room temperature resistivity decreased with Dy2O3 indicative of improved grain connectivity. △ Less

Submitted 9 February, 2006; originally announced February 2006.

Comments: 13 pages, 4 figures and 1 table

Strong influence of boron precursor powder on the critical current density of MgB2

Authors: S. K. Chen, K. A. Yates, M. G. Blamire, J. L. MacManus-Driscoll

Abstract: The influence of the nature of the boron precursor on the superconducting properties of polycrystalline MgB2 was studied. Critical current densities for the MgB2 made from high purity amorphous boron are at least a factor of three higher than typical values measured for standard MgB2 samples made from amorphous precursors. Two possible mechanisms are proposed to account for this difference. Samp… ▽ More The influence of the nature of the boron precursor on the superconducting properties of polycrystalline MgB2 was studied. Critical current densities for the MgB2 made from high purity amorphous boron are at least a factor of three higher than typical values measured for standard MgB2 samples made from amorphous precursors. Two possible mechanisms are proposed to account for this difference. Samples made from crystalline boron powders have around an order of magnitude lower Jc compared to those made from amorphous precursors. X-ray, Tc and resistivity studies indicate that this is as a result of reduced current cross section due to the formation of Mg-B-O phases. The samples made from amorphous B contain far fewer Mg-B-O phases than crystalline B despite the fact that the amorphous B contains more B2O3. The different reactivity rates of the precursor powders accounts for this anomaly. △ Less

Submitted 27 July, 2005; originally announced July 2005.

Comments: 17 pages, 2 tables, 5 figures, submitted to Superconductor Science and Technology

Benefits of current percolation in superconducting coated conductors

Authors: N. A. Rutter, J. H. Durrell, M. G. Blamire, J. L. MacManus-Driscoll, H. Wang, S. R. Foltyn

Abstract: The critical currents of MOD/RABiTS and PLD/IBAD coated conductors have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors… ▽ More The critical currents of MOD/RABiTS and PLD/IBAD coated conductors have been measured as a function of magnetic field orientation and compared to films grown on single crystal substrates. By varying the orientation of magnetic field applied in the plane of the film, we are able to determine the extent to which current flow in each type of conductor is percolative. Standard MOD/RABiTS conductors have also been compared to samples whose grain boundaries have been doped by diffusing Ca from an overlayer. We find that undoped MOD/RABiTS tapes have a less anisotropic in-plane field dependence than PLD/IBAD tapes and that the uniformity of critical current as a function of in-plane field angle is greater for MOD/RABiTS samples doped with Ca. △ Less

Submitted 16 June, 2005; originally announced June 2005.

Comments: Submitted to APL

Improved Current Densities in MgB2 By Liquid-Assisted Sintering

Authors: S. K. Chen, Z. Lockman, M. Wei, B. A. Glowacki, J. L. MacManus-Driscoll

Abstract: Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was… ▽ More Polycrystalline MgB2 samples with GaN additions were prepared by reaction of Mg, B, and GaN powders. The presence of Ga leads to a low melting eutectic phase which allowed liquid phase sintering and produces plate-like grains. For low-level GaN additions (5% at. % or less), the critical transition temperature, Tc, remained unchanged and in 1T magnetic field, the critical current density, Jc was enhanced by a factor of 2 and 10, for temperatures of \~5K and 20K, respectively. The values obtained are approaching those of hot isostatically pressed samples. △ Less

Submitted 29 April, 2005; originally announced April 2005.

Comments: 12 pages, 1 table, 4 figures, accepted in Applied Physics Letters

Normal state properties of high angle grain boundaries in (Y,Ca)Ba2Cu3O7-delta

Authors: S. H. Mennema, J. H. T. Ransley, G. Burnell, J. L. MacManus-Driscoll, E. J. Tarte, M. G. Blamire

Abstract: By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance ve… ▽ More By lithographically fabricating an optimised Wheatstone bridge geometry, we have been able to make accurate measurements of the resistance of grain boundaries in Y1-xCaxBa2Cu3O7-d between the superconducting transition temperature, Tc, and room temperature. Below Tc the normal state properties were assessed by applying sufficiently high currents. The behaviour of the grain boundary resistance versus temperature and of the conductance versus voltage are discussed in the framework charge transport through a tunnel barrier. The influence of misorientation angle, oxygen content, and calcium doping on the normal state properties is related to changes of the height and shape of the grain boundary potential barrier. △ Less

Submitted 31 August, 2004; originally announced September 2004.

Comments: 17 pages, 1 table, 5 figures, submitted to PRB

Strongly Enhanced Current Densities in Superconducting Coated Conductors of YBa2Cu3O7-x + BaZrO3

Authors: J. L. MacManus-Driscoll, S. R. Foltyn, Q. X. Jia, H. Wang, A. Serquis, L. Civale, B. Maiorov, M. E. Hawley, M. P. Maley, D. E. Peterson

Abstract: There are numerous potential applications for superconducting tapes, based on YBa2Cu3O7-x (YBCO) films coated onto metallic substrates. A long established goal of more than 15 years has been to understand the magnetic flux pinning mechanisms which allow films to maintain high current densities out to high magnetic fields. In fact, films carry 1-2 orders of magnitude higher current densities than… ▽ More There are numerous potential applications for superconducting tapes, based on YBa2Cu3O7-x (YBCO) films coated onto metallic substrates. A long established goal of more than 15 years has been to understand the magnetic flux pinning mechanisms which allow films to maintain high current densities out to high magnetic fields. In fact, films carry 1-2 orders of magnitude higher current densities than any other form of the material. For this reason, the idea of further improving pinning has received little attention. Now that commercialisation of conductors is much closer, for both better performance and lower fabrication costs, an important goal is to achieve enhanced pinning in a practical way. In this work, we demonstrate a simple and industrially scaleable route which yields a 1.5 to 5-fold improvement in the in-field current densities of already-high-quality conductors. △ Less

Submitted 3 June, 2004; originally announced June 2004.

Report number: LAUR 038733

Journal ref: Nature Materials 2004

Enhancement of Critical Current Density in low level Al-doped MgB2

Authors: A. Berenov, A. Serquis, X. Z. Liao, Y. T. Zhu, D. E. Peterson, Y. Bugoslavsky, K. A. Yates, M. G. Blamire, L. F. Cohen, J. L. MacManus-Driscoll

Abstract: Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were… ▽ More Two sets of MgB2 samples doped with up to 5 at. % of Al were prepared in different laboratories using different procedures. Decreases in the a and c lattice parameters were observed with Al doping confirming Al substitution onto the Mg site. The critical temperature (Tc) remained largely unchanged with Al doping. For 1 - 2.5 at.% doping, at 20K the in-field critical current densities (Jc's) were enhanced, particularly at lower fields. At 5K, in-field Jc was markedly improved, e.g. at 5T Jc was enhanced by a factor of 20 for a doping level of 1 at.% Al. The improved Jcs correlate with increased sample resistivity indicative of an increase in the upper critical field, Hc2, through alloying. △ Less

Submitted 24 May, 2004; originally announced May 2004.

Comments: 17 pages, 4 figures, to be published in Superconductor Science and Technology

Angular dependent vortex pinning mechanisms in YBCO coated conductors and thin films

Authors: L. Civale, B. Maiorov, A. Serquis, J. O. Willis, J. Y. Coulter, H. Wang, Q. X. Jia, P. N. Arendt, J. L. MacManus-Driscoll, M. P. Maley, S. R. Foltyn

Abstract: We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, b… ▽ More We present a comparative study of the angular dependent critical current density in YBa2Cu3O7 films deposited on IBAD MgO and on single crystal MgO and SrTiO3 substrates. We identify three angular regimes where pinning is dominated by different types of correlated and uncorrelated defects. We show that those regimes are present in all cases, indicating that the pinning mechanisms are the same, but their extension and characteristics are sample dependent, reflecting the quantitative differences in texture and defect density. In particular, the more defective nature of the films on IBAD turns into an advantage as it results in stronger vortex pinning, demonstrating that the critical current density of the films on single crystals is not an upper limit for the performance of the IBAD coated conductors. △ Less

Submitted 23 October, 2003; originally announced October 2003.

Comments: 14 pages, 3 figures. Submitted to APL

Report number: LA-UR-03-7336

Journal ref: Applied Physics Letters 84, (2004) 2121

Effective Vortex Pinning in MgB2 thin films

Authors: Y. Bugoslavsky, L. Cowey, T. J. Tate, G. K. Perkins, J. Moore, Z. Lockman, A. Berenov, J. L. MacManus-Driscoll, A. D. Caplin, L. F. Cohen, H Y Zhai, H M Christen, M P Paranthaman, D H Lowndes, M H Jo, M G Blamire

Abstract: We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD… ▽ More We discuss pinning properties of MgB2 thin films grown by pulsed-laser deposition (PLD) and by electron-beam (EB) evaporation. Two mechanisms are identified that contribute most effectively to the pinning of vortices in randomly oriented films. The EB process produces low defected crystallites with small grain size providing enhanced pinning at grain boundaries without degradation of Tc. The PLD process produces films with structural disorder on a scale less that the coherence length that further improves pinning, but also depresses Tc. △ Less

Submitted 2 July, 2002; originally announced July 2002.

The structure of the superconducting gap in MgB2 from point-contact spectroscopy

Authors: Y. Bugoslavsky, Y. Miyoshi, G. K. Perkins, A. V. Berenov, Z. Lockman, J. L. MacManus-Driscoll, L. F. Cohen, A. D. Caplin, H. Y. Zhai, M. P. Paranthaman, H. M. Christen, M. Blamire

Abstract: We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 +- 0.3 K and resistivity of about 20 microOhm cm at 40 K. The point-contact spectra prove dir… ▽ More We have studied the structure of the superconducting gap in MgB2 thin films by means of point-contact spectroscopy using a gold tip. The films were produced by depositing pure boron on a sapphire substrate, using e-beam evaporation, followed by reaction with magnesium vapour. The films have a Tc of 38.6 +- 0.3 K and resistivity of about 20 microOhm cm at 40 K. The point-contact spectra prove directly the existence of a multi-valued order parameter in MgB2, with two distinct values of the gap, DELTA1=2.3+-0.3 meV and DELTA2=6.2+-0.7 meV at 4.2 K. Analysis of the spectra in terms of the Blonder-Tinkham-Klapwijk model reveals that both gaps close simultaneously at the Tc of the film. Possible mechanisms that can explain the intrinsic co-existence of two values of the gap are discussed. △ Less

Submitted 15 October, 2001; originally announced October 2001.

Comments: 9 pages, 9 figures

Microwave Power, DC Magnetic Field, Frequency and Temperature Dependence of the Surface Resistance of MgB2

Authors: A. A. Zhukov, A. Purnell, Y. Miyoshi, Y. Bugoslavsky, Z. Lockman, A. Berenov, J. L. MacManus-Driscoll, L. F. Cohen, H. Y. Zhai, H. M. Christen, M. P. Paranthaman, D. H. Lowndes, M. H. Jo, M. G. Blamire, Ling Hao, J. C. Gallop

Abstract: The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high qu… ▽ More The microwave power, dc magnetic field, frequency and temperature dependence of the surface resistance of MgB2 films and powder samples were studied. Sample quality is relatively easy to identify by a number of characteristics, the most clear being the breakdown in the omega squared law for poor quality samples. Analysis of the experimental data suggests the most attractive procedure for high quality film growth for technical applications. △ Less

Submitted 21 September, 2001; originally announced September 2001.

Comments: 14 Pages, 4 Figures

Temperature dependence of the microwave surface impedance measured on different kinds of MgB$_2$ samples

Authors: A. A. Zhukov, L. F. Cohen, A. Purnell, Y. Bugoslavsky, A. Berenov, J. L. MacManus-Driscoll, H. Y Zhai, Hans M. Christen, Mariappan P. Paranthaman, Douglas H. Lowndes, M. A. Jo, M. C. Blamire, Ling Hao, J. Gallop

Abstract: In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB$_2$. One film has $T_c=30$ K and is not textured, the other is partially c-axis orientated with $T_c=38$ K. These samples show different types of temperature dependence of the field penetration depth: linear for the powder sample, exponential with $Δ/kT_c<1.76$ (film wi… ▽ More In this paper we present the results of measurements of the microwave surface impedance of a powder sample and two films of MgB$_2$. One film has $T_c=30$ K and is not textured, the other is partially c-axis orientated with $T_c=38$ K. These samples show different types of temperature dependence of the field penetration depth: linear for the powder sample, exponential with $Δ/kT_c<1.76$ (film with $T_c=30$ K) and strong coupling behaviour with $Δ/kT_c\sim 2.25$ (film with $T_c=38$ K). The results are well described in terms of an anisotropic gap model or presence of a slightly deficient MgB$_2$ phase. The data set for all samples - taken as a whole cannot be fitted into a two gap scenario. △ Less

Submitted 15 July, 2001; v1 submitted 11 July, 2001; originally announced July 2001.

Comments: 4 pages, 3 figures

Growth of Strongly Biaxially Aligned MgB2 Thin Films on Sapphire by Post-annealing of Amorphous Precursors

Authors: A. Berenov, Z. Lockman, X. Qi, Y. Bugoslavsky, L. F. Cohen, M. -H. Jo, N. A. Stelmashenko, V. N. Tsaneva, M. Kambara, N. Hari Babu, D. A. Cardwell, M. G. Blamire, J. L. MacManus-Driscoll

Abstract: MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. T… ▽ More MgB2 thin films were cold-grown on sapphire substrates by pulsed laser deposition (PLD), followed by post-annealing in mixed, reducing gas, Mg-rich, Zr gettered, environments. The films had Tcs in the range 29 K to 34 K, Jcs (20K, H=0) in the range 30 kA/cm2 to 300 kA/cm2, and irreversibility fields at 20 K of 4 T to 6.2 T. An inverse correlation was found between Tc and irreversibility field. The films had grain sizes of 0.1-1 micron and a strong biaxial alignment was observed in the 950C annealed film. △ Less

Submitted 14 June, 2001; originally announced June 2001.

Comments: 12 Pages, 5 figures, submitted to Applied Physics Letters