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Phase Change Induced Magnetic Switching through Metal-insulator Transition in VO2/TbFeCo Films
Authors:
Chung T. Ma,
Salinporn Kittiwatnakul,
Apiprach Sittipongpittaya,
Yuhan Wang,
Md Golam Morshed,
Avik W. Ghosh,
S. Joseph Poon
Abstract:
The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion…
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The ability to manipulate spins in magnetic materials is essential in designing spintronics devices. One method for magnetic switching is through strain. In VO2 on TiO2 thin films, while VO2 remains rutile across the metal-insulator transition, the in-plane lattice area expands going from low temperature insulating phase to high temperature conducting phase. In a VO2/TbFeCo bilayer, the expansion of the VO2 lattice area exerts tension on the amorphous TbFeCo layer. Through the strain effect, magnetic properties, including the magnetic anisotropy and magnetization, of TbFeCo can be changed. In this work, the changes in magnetic properties of TbFeCo on VO2/TiO2(011) are demonstrated using anomalous Hall effect measurements. Across the metal-insulator transition, TbFeCo loses perpendicular magnetic anisotropy, and the magnetization in TbFeCo turns from out-of-plane to in-plane. Using atomistic simulations, we confirm these tunable magnetic properties originating from the metal-insulator transition of VO2. This study provides the groundwork for controlling magnetic properties through a phase transition.
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Submitted 25 October, 2023;
originally announced October 2023.
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Measurement of the Dzyaloshinskii-Moriya Interaction in Mn4N Films that Host Skyrmions
Authors:
Wei Zhou,
Chung Ting Ma,
S. Joseph Poon
Abstract:
Mn4N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. A recent experiment confirmed the existence of tunable magnetic skyrmions in MgO/Mn4N/CuxPt1-x(x=0,0.5,0.9,0.95), and density functional theory (DFT) calculation provided a…
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Mn4N thin film is one of the potential magnetic mediums for spintronic devices due to its ferrimagnetism with low magnetization, large perpendicular magnetic anisotropy (PMA), thermal stability, and large domain wall velocity. A recent experiment confirmed the existence of tunable magnetic skyrmions in MgO/Mn4N/CuxPt1-x(x=0,0.5,0.9,0.95), and density functional theory (DFT) calculation provided a large theoretical value of the interfacial Dzyaloshinskii-Moriya Interaction (iDMI) of Mn4N/Pt, which is consistent with the predicted chemical trend of DMI in transition metal/Pt films. So far, measured DMI has not been reported in Mn4N which is needed in order to support the predicted large DMI value. This paper reports the average DMI of MgO/Mn4N(17nm)/CuxPt1-x(3nm), extracted from the anomalous Hall effect with various tilted angles, based on magnetic droplet theory with DMI effects. The DMI decreases from 0.267 mJ/m2 to 0.011 mJ/m2 with non-linear tendencies as Cu concentration in the CuxPt1-x capping layer increases from 0 to 1, demonstrating the control of DMI through CuxPt1-x capping layer. Furthermore, a solid solution model is developed, based on X-ray photoelectron spectroscopy (XPS) compositional depth profile, to analyze the possible effects on DMI from the mixing layers at the surface of Mn4N. After taking into account the mixing layers, the large DMI in Mn4N film with Pt capping is consistent with the predicted DMI.
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Submitted 15 May, 2023;
originally announced May 2023.
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Ultrafast Switching in Synthetic Antiferromagnet with Bilayer Rare-Earth Transition-Metal Ferrimagnets
Authors:
Chung Ting Ma,
Wei Zhou,
S. Joseph Poon
Abstract:
In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with nanosecond speed through the spin torque effect. For faster switching, subpicosecond switching with femtoseconds laser pulse has been achieved in amorphous rar…
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In spintronics, it is important to be able to manipulate magnetization rapidly and reliably. Several methods can control magnetization, such as by applying current pulses or magnetic fields. An applied current can reverse magnetization with nanosecond speed through the spin torque effect. For faster switching, subpicosecond switching with femtoseconds laser pulse has been achieved in amorphous rare-earth transition-metal ferrimagnets. In this study, we employed atomistic simulations to investigate ultrafast switching in a synthetic antiferromagnet with bilayer amorphous FeGd ferrimagnets. Using a two-temperature model, we demonstrated ultrafast switching in this synthetic antiferromagnet without external magnetic fields. Furthermore, we showed that if we initially stabilize a skyrmion in this heterostructure, the ultrafast laser can switch the skyrmion state using the same mechanism. Furthermore, this bilayer design allows the control of each ferrimagnetic layer individually and opens the possibility for a magnetic tunnel junction.
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Submitted 25 October, 2022;
originally announced October 2022.
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Interfacial Mixing Effect in a Promising Skyrmionic Material: Ferrimagnetic Mn$_4$N
Authors:
Chung T. Ma,
Wei Zhou,
Brian J. Kirby,
S. Joseph Poon
Abstract:
Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films h…
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Interfacial mixing of elements is a well-known phenomenon found in thin film deposition. For thin-film magnetic heterostructures, interfacial compositional inhomogeneities can have drastic effects on the resulting functionalities. As such, care must be taken to characterize the compositional and magnetic properties of thin films intended for device use. Recently, ferrimagnetic Mn$_4$N thin films have drawn considerable interest due to exhibiting perpendicular magnetic anisotropy, high domain-wall mobility, and good thermal stability. In this study, we employed X-ray photoelectron spectroscopy (XPS) and polarized neutron reflectometry (PNR) measurements to investigate the interfaces of an epitaxially-grown MgO/Mn$_4$N/Pt trilayer deposited at 450 $^{\circ}$C. XPS revealed the thickness of elemental mixing regions of near 5 nm at both interfaces. Using PNR, we found that these interfaces exhibit essentially zero net magnetization at room temperature. Despite the high-temperature deposition at 450 $^{\circ}$C, the thickness of mixing regions is comparable to those observed in magnetic films deposited at room temperature. Micromagnetic simulations show that this interfacial mixing should not deter the robust formation of small skyrmions, consistent with a recent experiment. The results obtained are encouraging in terms of the potential of integrating thermally stable Mn$_4$N into future spintronic devices.
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Submitted 4 August, 2022;
originally announced August 2022.
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Tunable Magnetic Skyrmions in Ferrimagnetic Mn$_4$N
Authors:
Chung T. Ma,
Timothy Q. Hartnett,
Wei Zhou,
Prasanna V. Balachandran,
S. Joseph Poon
Abstract:
Thin films of ferrimagnetic Mn$_4$N are candidate materials to host magnetic skyrmions that have demonstrated thermal stability up to 450$^\circ$C. However, there are no experimental reports observing skyrmions in this system. Here, we discuss the results of sputter grown 15-17~nm Mn$_4$N thin films on MgO substrate capped with Pt$_{1-x}$Cu$_{x}$ layers. Vibrating sample magnetometry measurement o…
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Thin films of ferrimagnetic Mn$_4$N are candidate materials to host magnetic skyrmions that have demonstrated thermal stability up to 450$^\circ$C. However, there are no experimental reports observing skyrmions in this system. Here, we discuss the results of sputter grown 15-17~nm Mn$_4$N thin films on MgO substrate capped with Pt$_{1-x}$Cu$_{x}$ layers. Vibrating sample magnetometry measurement of out-of-plane hysteresis loops confirmed that magnetic properties are insensitive to the cap layer composition. Imaging based on magnetic force microscopy measurements observed 300 to 50~nm sized skyrmions, as the Cu concentration was increased from $x$ = 0 to 0.9. We performed density functional theory calculations and found that the interfacial Dzyaloshinskii-Moriya interactions (iDMI) follow a trend: Mn$_4$N/MgO(001) $<$ Cu/Mn$_4$N(001) $<$ Pt/Mn$_4$N(001). We infer from these calculations that $x$ in Pt$_{1-x}$Cu$_{x}$ capping layer can serve as a robust tuning knob to tailor the iDMI and control the skyrmion size. This work provides guidance to achieve smaller Néel-type skyrmions in Mn$_4$N thin films, which is an important step forward for building thermally stable skyrmionic devices.
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Submitted 30 October, 2021;
originally announced November 2021.
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Computing and Memory Technologies based on Magnetic Skyrmions
Authors:
Hamed Vakili,
Wei Zhou,
Chung T Ma,
Md Golam Morshed,
Mohammad Nazmus Sakib,
Tim Hartnett,
Jun-Wen Xu,
Samiran Ganguly,
Kai Litzius,
Yassine Quessab,
Prasanna Balachandran,
Mircea Stan,
S J Poon,
Andrew D. Kent,
Geoffrey Beach,
Avik W. Ghosh
Abstract:
Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of…
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Solitonic magnetic excitations such as domain walls and, specifically, skyrmionics enable the possibility of compact, high density, ultrafast,all-electronic, low-energy devices, which is the basis for the emerging area of skyrmionics. The topological winding of skyrmion spins affects their overall lifetime, energetics and dynamical behavior. In this review, we discuss skyrmionics in the context of the present day solid state memory landscape, and show how their size, stability and mobility can be controlled by material engineering, as well as how they can be nucleated and detected. Ferrimagnetsnear their compensation points are important candidates for this application, leading to detailed exploration of amorphous CoGd as well as the study of emergent materials such as Mn$_4$N and Inverse Heusler alloys. Along with material properties, geometrical parameters such as film thickness, defect density and notches can be used to tune skyrmion properties, such as their size and stability. Topology, however, can be a double-edged sword, especially for isolated metastable skyrmions, as it brings stability at the cost of additional damping and deflective Magnus forces compared to domain walls. Skyrmion deformation in response to forces also makes them intrinsically slower than domain walls. We explore potential analog applications of skyrmions, including temporal memory at low density, and decorrelator for stochastic computing at a higher density that capitalizes on their interactions. We summarize the main challenges to achieve a skyrmionics technology, including maintaining positional stability with very high accuracy, electrical readout, especially for small ferrimagnetic skyrmions, deterministic nucleation and annihilation, and overall integration with digital circuits with the associated circuit overhead.
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Submitted 3 June, 2021; v1 submitted 25 January, 2021;
originally announced January 2021.
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Rare-earth-free ferrimagnetic Mn4N sub-20 nm thin films as high-temperature spintronic material
Authors:
W. Zhou,
C. T. Ma,
T. Q. Hartnett,
P. V. Balachandran,
S. J. Poon
Abstract:
Ferrimagnetic alloy thin films that exhibit perpendicular (out-of-plane) magnetic anisotropy (PMA) with low saturation magnetization, such as GdCo and Mn4N, were predicted to be favorable for hosting small Neel skyrmions for room temperature applications. Due to the exponential decay of interfacial Dzyaloshinskii-Moriya interaction (DMI) and the limited range of spin-orbit-torques, which can be us…
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Ferrimagnetic alloy thin films that exhibit perpendicular (out-of-plane) magnetic anisotropy (PMA) with low saturation magnetization, such as GdCo and Mn4N, were predicted to be favorable for hosting small Neel skyrmions for room temperature applications. Due to the exponential decay of interfacial Dzyaloshinskii-Moriya interaction (DMI) and the limited range of spin-orbit-torques, which can be used to drive skyrmion motion, the thickness of the ferrimagnetic layer has to be small, preferably under 20 nm. While there are examples of sub-20 nm, rare earth-transition metal (RE-TM), ferrimagnetic thin films fabricated by sputter deposition, to date rare-earth-free sub-20 nm Mn4N films with PMA have only been reported to be achieved by molecular beam epitaxy, which is not suitable for massive production. Here we report the successful thermal growth of sub-20 nm Mn4N films with PMA at 400-450 °C substrate temperatures on MgO substrates by reactive sputtering. The Mn4N films were achieved by reducing the surface roughness of MgO substrate through a high-temperature vacuum annealing process. The optimal films showed low saturation magnetization (Ms = 43 emu/cc), low magnetic anisotropy energy (0.7 Merg/cc), and a remanent magnetization to saturation magnetization ratio (Mr/Ms) near 1 at room temperature. Preliminary ab-initio density functional theory (DFT) calculations have confirmed the ferrimagnetic ground state of Mn4N grown on MgO. The magnetic properties, along with the high thermal stability of Mn4N thin films in comparison with RE-TM thin films, provide the platform for future studies of practical skyrmion-based spintronic materials.
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Submitted 18 December, 2020;
originally announced December 2020.
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Tuning interfacial Dzyaloshinskii-Moriya interactions in thin amorphous ferrimagnetic alloys
Authors:
Y. Quessab,
J. -W. Xu,
C. T. Ma,
W. Zhou,
G. A. Riley,
J. M. Shaw,
H. T. Nembach,
S. J. Poon,
A. D. Kent
Abstract:
Skyrmions can be stabilized in magnetic systems with broken inversion symmetry and chiral interactions, such as Dzyaloshinskii-Moriya interactions (DMI). Further, compensation of magnetic moments in ferrimagnetic materials can significantly reduce magnetic dipolar interactions, which tend to favor large skyrmions. Tuning DMI is essential to control skyrmion properties, with symmetry breaking at in…
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Skyrmions can be stabilized in magnetic systems with broken inversion symmetry and chiral interactions, such as Dzyaloshinskii-Moriya interactions (DMI). Further, compensation of magnetic moments in ferrimagnetic materials can significantly reduce magnetic dipolar interactions, which tend to favor large skyrmions. Tuning DMI is essential to control skyrmion properties, with symmetry breaking at interfaces offering the greatest flexibility. However, in contrast to the ferromagnet case, few studies have investigated interfacial DMI in ferrimagnets. Here we present a systematic study of DMI in ferrimagnetic CoGd films by Brillouin light scattering. We demonstrate the ability to control DMI by the CoGd cap layer composition, the stack symmetry and the ferrimagnetic layer thickness. The DMI thickness dependence confirms its interfacial nature. In addition, magnetic force microscopy reveals the ability to tune DMI in a range that stabilizes sub-100 nm skyrmions at room temperature in zero field. Our work opens new paths for controlling interfacial DMI in ferrimagnets to nucleate and manipulate skyrmions.
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Submitted 1 November, 2019;
originally announced November 2019.
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Amorphous Ferrimagnets: an Ideal Host for Ultra-Small Skyrmions at Room Temperature
Authors:
S. Joseph Poon,
Chung Ting Ma
Abstract:
Recently, magnetic skyrmion has emerged as an active topic of fundamental study and applications in magnetic materials research. Magnetic skyrmions are vortex-like spin excitations with topological protection and therefore are more robust to pinning compared with magnetic domain walls. We employ atomistic simulations to create room-temperature ultra-small Neel skyrmions in amorphous ferrimagnet. T…
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Recently, magnetic skyrmion has emerged as an active topic of fundamental study and applications in magnetic materials research. Magnetic skyrmions are vortex-like spin excitations with topological protection and therefore are more robust to pinning compared with magnetic domain walls. We employ atomistic simulations to create room-temperature ultra-small Neel skyrmions in amorphous ferrimagnet. The fast propagation and low-dissipation dynamics of ultra-small ferrimagnetic skyrmions make them attractive for utilization as an alternative to domain walls in spin-based memory and logic devices.
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Submitted 21 August, 2019; v1 submitted 19 August, 2019;
originally announced August 2019.
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Robust Formation of Ultrasmall Room-Temperature Neél Skyrmions in Amorphous Ferrimagnets from Atomistic Simulations
Authors:
Chung Ting Ma,
Yunkun Xie,
Howard Sheng,
Avik W. Ghosh,
S. Joseph Poon
Abstract:
Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films c…
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Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using thin-film ferromagnets and ferrimagnets to host Neél skyrmions for spintronic applications. However, it is unclear if ultrasmall (10 nm or less) skyrmions can ever be stabilized at room temperature for practical use in high density parallel racetrack memories. While thicker films can improve stability, DMI decays rapidly away from the interface. As such, spins far away from the interface would experience near-zero DMI, raising question on whether or not unrealistically large DMI is needed to stabilize skyrmions, and whether skyrmions will also collapse away from the interface. To address these questions, we have employed atomistic stochastic Landau-Lifshitz-Gilbert simulations to investigate skyrmions in amorphous ferrimagnetic GdCo. It is revealed that a significant reduction in DMI below that of Pt is sufficient to stabilize ultrasmall skyrmions even in films as thick as 15 nm. Moreover, skyrmions are found to retain a uniform columnar shape across the film thickness despite the decaying DMI. Our results show that increasing thickness and reducing DMI in GdCo can further reduce the size of skyrmions at room temperature, which is crucial to improve the density and energy efficiency in skyrmion based devices.
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Submitted 1 July, 2019;
originally announced July 2019.
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Skyrmion Formation Induced by Antiferromagnetic-enhanced Interfacial Dzyaloshinskii Moriya Interaction
Authors:
Marco Chung Ting Ma,
Yunkun Xie,
Howard Sheng,
S. Joseph Poon,
Avik Ghosh
Abstract:
Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using ferromagnet to host Neél skyrmions for device applications. However, challenges remain to reduce the size of skyrmion to near 10 nm. Amorphous rare-earth-transitional-metal ferrimagnets are attractive alternative materials to obtain ultrasmall skyrmions at room temperature. Their i…
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Neél skyrmions originate from interfacial Dzyaloshinskii Moriya interaction (DMI). Recent studies have explored using ferromagnet to host Neél skyrmions for device applications. However, challenges remain to reduce the size of skyrmion to near 10 nm. Amorphous rare-earth-transitional-metal ferrimagnets are attractive alternative materials to obtain ultrasmall skyrmions at room temperature. Their intrinsic perpendicular magnetic anisotropy and tunable magnetization provides a favorable environment for skyrmion stability. In this work, we employ atomistic stochastic Landau-Liftshitz-Gilbert (LLG) algorithm to investigate skyrmions in GdFe within the interfacial DMI model. Despite the rapid decay of DMI away from the interface, small skyrmions of near 10 nm are found in thick ~ 5 nm amorphous GdFe film at 300K. We have also considered three scenarios for the sign of DMI between Gd-Fe pair. It is revealed that antiferromagnetic coupling in the ferrimagnet plays an important role in enhancing the effect of interfacial DMI and to stabilize skyrmion. These results show that ferrimagnets and antiferromagnets with intrinsic antiferromagnetic couplings are appealing materials to host small skyrmions at room temperature, which is crucial to improve density and energy efficiency in skyrmion based devices.
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Submitted 17 June, 2018;
originally announced June 2018.
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Micromagnetic Simulation of Amorphous Ferrimagnetic TbFeCo Films with Exchange Coupled Nanophases
Authors:
Chung T. Ma,
Xiaopu Li,
S. Joseph Poon
Abstract:
Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange interaction between the two nanoscale amorphous phases distributed within the films. Here, we present a computational model of phase-separated TbFeCo using micromagn…
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Amorphous ferrimagnetic TbFeCo thin films are found to exhibit exchange bias effect near the compensation temperature by magnetic hysteresis loop measurement. The observed exchange anisotropy is believed to originate from the exchange interaction between the two nanoscale amorphous phases distributed within the films. Here, we present a computational model of phase-separated TbFeCo using micromagnetic simulation. Two types of cells with different Tb concentration are distributed within the simulated space to obtain a heterogeneous structure consisting of two nanoscale amorphous phases. Each cell contains separated Tb and FeCo components, forming two antiferromagnetically coupled sublattices. Using this model, we are able to show the existence of exchange bias effect, and the shift in hysteresis loops is in agreement with experiment. The micromagnetic model developed herein for a heterogeneous magnetic material may also account for some recent measurements of exchange bias effect in crystalline films.
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Submitted 30 April, 2016;
originally announced May 2016.
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Exchange Bias and Bistable Magneto-Resistance States in Amorphous TbFeCo thin Films
Authors:
Xiaopu Li,
Chung T. Ma,
Jiwei Lu,
Arun Devaraj,
Steven R. Spurgeon,
Ryan B. Comes,
S. Joseph Poon
Abstract:
Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within t…
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Amorphous TbFeCo thin films sputter deposited at room temperature on thermally oxidized Si substrate are found to exhibit strong perpendicular magnetic anisotropy (PMA). Atom probe tomography (APT), scanning transmission electron microscopy (STEM), and energy dispersive spectroscopy (EDS) mapping have revealed two nanoscale amorphous phases with different Tb atomic percentages distributed within the amorphous film. Exchange bias accompanied by bistable magneto-resistance states has been uncovered near room temperature by magnetization and magneto-transport measurements. The exchange anisotropy originates from the exchange interaction between the ferrimagnetic and ferromagnetic components corresponding to the two amorphous phases. This study provides a platform for exchange bias and magneto-resistance switching using single-layer amorphous ferrimagnetic thin films that require no epitaxial growth.
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Submitted 18 December, 2015;
originally announced December 2015.
