Showing 1–19 of 19 results for author: Mądzik, M T

Operating two exchange-only qubits in parallel

Authors: Mateusz T. Mądzik, Florian Luthi, Gian Giacomo Guerreschi, Fahd A. Mohiyaddin, Felix Borjans, Jason D. Chadwick, Matthew J. Curry, Joshua Ziegler, Sarah Atanasov, Peter L. Bavdaz, Elliot J. Connors, J. Corrigan, H. Ekmel Ercan, Robert Flory, Hubert C. George, Benjamin Harpt, Eric Henry, Mohammad M. Islam, Nader Khammassi, Daniel Keith, Lester F. Lampert, Todor M. Mladenov, Randy W. Morris, Aditi Nethwewala, Samuel Neyens , et al. (16 additional authors not shown)

Abstract: Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua… ▽ More Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology. △ Less

Submitted 1 April, 2025; originally announced April 2025.

Scalable entanglement of nuclear spins mediated by electron exchange

Authors: Holly G. Stemp, Mark R. van Blankenstein, Serwan Asaad, Mateusz T. Mądzik, Benjamin Joecker, Hannes R. Firgau, Arne Laucht, Fay E. Hudson, Andrew S. Dzurak, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrea Morello

Abstract: The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a… ▽ More The use of nuclear spins for quantum computation is limited by the difficulty in creating genuine quantum entanglement between distant nuclei. Current demonstrations of nuclear entanglement in semiconductors rely upon coupling the nuclei to a common electron, which is not a scalable strategy. Here we demonstrate a two-qubit Control-Z logic operation between the nuclei of two phosphorus atoms in a silicon device, separated by up to 20 nanometers. Each atoms binds separate electrons, whose exchange interaction mediates the nuclear two-qubit gate. We prove that the nuclei are entangled by preparing and measuring Bell states with a fidelity of 76 +/- 5 $\%$ and a concurrence of 0.67 +/- 0.05. With this method, future progress in scaling up semiconductor spin qubits can be extended to the development of nuclear-spin based quantum computers. △ Less

Submitted 9 March, 2025; originally announced March 2025.

Short two-qubit pulse sequences for exchange-only spin qubits in 2D layouts

Authors: Jason D. Chadwick, Gian Giacomo Guerreschi, Florian Luthi, Mateusz T. Mądzik, Fahd A. Mohiyaddin, Prithviraj Prabhu, Albert T. Schmitz, Andrew Litteken, Shavindra Premaratne, Nathaniel C. Bishop, Anne Y. Matsuura, James S. Clarke

Abstract: Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a s… ▽ More Exchange-only (EO) spin qubits in quantum dots offer an expansive design landscape for architecting scalable device layouts. The study of two-EO-qubit operations, which involve six electrons in six quantum dots, has so far been limited to a small number of the possible configurations, and previous works lack analyses of design considerations and implications for quantum error correction. Using a simple and fast optimization method, we generate complete pulse sequences for CX, CZ, iSWAP, leakage-controlled CX, and leakage-controlled CZ two-qubit gates on 450 unique planar six-dot topologies and analyze differences in sequence length (up to 43\% reduction) across topology classes. In addition, we show that relaxing constraints on post-operation spin locations can yield further reductions in sequence length; conversely, constraining these locations in a particular way generates a CXSWAP operation with minimal additional cost over a standard CX. We integrate this pulse library into the Intel quantum stack and experimentally verify pulse sequences on a Tunnel Falls chip for different operations in a linear-connectivity device to confirm that they work as expected. Finally, we explore architectural implications of these results for quantum error correction. Our work guides hardware and software design choices for future implementations of scalable quantum dot architectures. △ Less

Submitted 9 April, 2025; v1 submitted 19 December, 2024; originally announced December 2024.

Comments: 17 pages, 13 figures

12-spin-qubit arrays fabricated on a 300 mm semiconductor manufacturing line

Authors: Hubert C. George, Mateusz T. Mądzik, Eric M. Henry, Andrew J. Wagner, Mohammad M. Islam, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew Curry, Michael K. Harper, Daniel Keith, Lester Lampert, Florian Luthi, Fahd A. Mohiyaddin, Sandra Murcia, Rohit Nair, Rambert Nahm, Aditi Nethwewala, Samuel Neyens, Bishnu Patra, Roy D. Raharjo, Carly Rogan, Rostyslav Savytskyy, Thomas F. Watson, Josh Ziegler , et al. (7 additional authors not shown)

Abstract: Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code name… ▽ More Intels efforts to build a practical quantum computer are focused on developing a scalable spin-qubit platform leveraging industrial high-volume semiconductor manufacturing expertise and 300 mm fabrication infrastructure. Here, we provide an overview of the design, fabrication, and demonstration of a new customized quantum test chip, which contains 12-quantum-dot spin-qubit linear arrays, code named Tunnel Falls. These devices are fabricated using immersion and extreme ultraviolet lithography (EUV), along with other standard high-volume manufacturing (HVM) processes, as well as production-level process control. We present key device features and fabrication details, as well as qubit characterization results confirming device functionality. These results corroborate our fabrication methods and are a crucial step towards scaling of extensible 2D qubit array schemes. △ Less

Submitted 20 December, 2024; v1 submitted 21 October, 2024; originally announced October 2024.

Fast quantum gates for exchange-only qubits using simultaneous exchange pulses

Authors: Irina Heinz, Felix Borjans, Matthew J. Curry, Roza Kotlyar, Florian Luthi, Mateusz T. Mądzik, Fahd A. Mohiyaddin, Nathaniel Bishop, Guido Burkard

Abstract: The benefit of exchange-only qubits compared to other spin qubit types is the universal control using only voltage controlled exchange interactions between neighboring spins. As a compromise, qubit operations have to be constructed from non-orthogonal rotation axes of the Bloch sphere and result in rather long pulsing sequences. This paper aims to develop a faster implementation of single-qubit an… ▽ More The benefit of exchange-only qubits compared to other spin qubit types is the universal control using only voltage controlled exchange interactions between neighboring spins. As a compromise, qubit operations have to be constructed from non-orthogonal rotation axes of the Bloch sphere and result in rather long pulsing sequences. This paper aims to develop a faster implementation of single-qubit and two-qubit gates using simultaneous exchange pulses. We introduce pulse sequences in which single-qubit gates could be executed faster and show that subsequences on three spins in two-qubit gates could be implemented in fewer steps. Our findings can particularly speed up gate sequences for realistic idle times between sequential pulses and we show that this advantage increases with more interconnectivity of the quantum dots. We further demonstrate how a phase operation can introduce a relative phase between the computational and some of the leakage states, which can be advantageous for the construction of two-qubit gates. In addition to our theoretical analysis, we experimentally demonstrate and characterize a simultaneous exchange implementation of $X$ rotations in a SiGe quantum dot device and compare to the state of the art with sequential exchange pulses. △ Less

Submitted 14 May, 2025; v1 submitted 9 September, 2024; originally announced September 2024.

Tomography of entangling two-qubit logic operations in exchange-coupled donor electron spin qubits

Authors: Holly G. Stemp, Serwan Asaad, Mark R. van Blankenstein, Arjen Vaartjes, Mark A. I. Johnson, Mateusz T. Mądzik, Amber J. A. Heskes, Hannes R. Firgau, Rocky Y. Su, Chih Hwan Yang, Arne Laucht, Corey I. Ostrove, Kenneth M. Rudinger, Kevin Young, Robin Blume-Kohout, Fay E. Hudson, Andrew S. Dzurak, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrea Morello

Abstract: Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of… ▽ More Scalable quantum processors require high-fidelity universal quantum logic operations in a manufacturable physical platform. Donors in silicon provide atomic size, excellent quantum coherence and compatibility with standard semiconductor processing, but no entanglement between donor-bound electron spins has been demonstrated to date. Here we present the experimental demonstration and tomography of universal 1- and 2-qubit gates in a system of two weakly exchange-coupled electrons, bound to single phosphorus donors introduced in silicon by ion implantation. We surprisingly observe that the exchange interaction has no effect on the qubit coherence. We quantify the fidelity of the quantum operations using gate set tomography (GST), and we use the universal gate set to create entangled Bell states of the electrons spins, with fidelity ~ 93%, and concurrence 0.91 +/- 0.08. These results form the necessary basis for scaling up donor-based quantum computers. △ Less

Submitted 2 March, 2024; v1 submitted 27 September, 2023; originally announced September 2023.

Probing single electrons across 300 mm spin qubit wafers

Authors: Samuel Neyens, Otto K. Zietz, Thomas F. Watson, Florian Luthi, Aditi Nethwewala, Hubert C. George, Eric Henry, Mohammad Islam, Andrew J. Wagner, Felix Borjans, Elliot J. Connors, J. Corrigan, Matthew J. Curry, Daniel Keith, Roza Kotlyar, Lester F. Lampert, Mateusz T. Madzik, Kent Millard, Fahd A. Mohiyaddin, Stefano Pellerano, Ravi Pillarisetty, Mick Ramsey, Rostyslav Savytskyy, Simon Schaal, Guoji Zheng , et al. (5 additional authors not shown)

Abstract: Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev… ▽ More Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices. △ Less

Submitted 3 May, 2024; v1 submitted 10 July, 2023; originally announced July 2023.

Comments: 33 pages, 4 figures, 10 extended data figures. Supplementary Information available under "Ancillary files."

A 2D quantum dot array in planar $^{28}$Si/SiGe

Authors: Florian K. Unseld, Marcel Meyer, Mateusz T. Mądzik, Francesco Borsoi, Sander L. de Snoo, Sergey V. Amitonov, Amir Sammak, Giordano Scappucci, Menno Veldhorst, Lieven M. K. Vandersypen

Abstract: Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking… ▽ More Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest performance for spin qubit logic has been realized in silicon, but scaling silicon quantum dot arrays in two dimensions has proven to be challenging. By taking advantage of high-quality heterostructures and carefully designed gate patterns, we are able to form a tunnel coupled 2 $\times$ 2 quantum dot array in a $^{28}$Si/SiGe heterostructure. We are able to load a single electron in all four quantum dots, thus reaching the (1,1,1,1) charge state. Furthermore we characterise and control the tunnel coupling between all pairs of dots by measuring polarisation lines over a wide range of barrier gate voltages. Tunnel couplings can be tuned from about $30~\rm μeV$ up to approximately $400~\rm μeV$. These experiments provide a first step toward the operation of spin qubits in $^{28}$Si/SiGe quantum dots in two dimensions. △ Less

Submitted 6 June, 2023; v1 submitted 31 May, 2023; originally announced May 2023.

Comments: 8 pages, 6 figures

Hotter is easier: unexpected temperature dependence of spin qubit frequencies

Authors: Brennan Undseth, Oriol Pietx-Casas, Eline Raymenants, Mohammad Mehmandoost, Mateusz T. Mądzik, Stephan G. J. Philips, Sander L. de Snoo, David J. Michalak, Sergey V. Amitonov, Larysa Tryputen, Brian Paquelet Wuetz, Viviana Fezzi, Davide Degli Esposti, Amir Sammak, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including pr… ▽ More As spin-based quantum processors grow in size and complexity, maintaining high fidelities and minimizing crosstalk will be essential for the successful implementation of quantum algorithms and error-correction protocols. In particular, recent experiments have highlighted pernicious transient qubit frequency shifts associated with microwave qubit driving. Workarounds for small devices, including prepulsing with an off-resonant microwave burst to bring a device to a steady-state, wait times prior to measurement, and qubit-specific calibrations all bode ill for device scalability. Here, we make substantial progress in understanding and overcoming this effect. We report a surprising non-monotonic relation between mixing chamber temperature and spin Larmor frequency which is consistent with observed frequency shifts induced by microwave and baseband control signals. We find that purposefully operating the device at 200 mK greatly suppresses the adverse heating effect while not compromising qubit coherence or single-qubit fidelity benchmarks. Furthermore, systematic non-Markovian crosstalk is greatly reduced. Our results provide a straightforward means of improving the quality of multi-spin control while simplifying calibration procedures for future spin-based quantum processors. △ Less

Submitted 28 April, 2023; v1 submitted 25 April, 2023; originally announced April 2023.

Comments: 17 pages, 11 figures

Journal ref: Phys. Rev. X 13, 041015 (2023)

Shuttling an electron spin through a silicon quantum dot array

Authors: A. M. J. Zwerver, S. V. Amitonov, S. L. de Snoo, M. T. Mądzik, M. Russ, A. Sammak, G. Scappucci, L. M. K. Vandersypen

Abstract: Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant sp… ▽ More Coherent links between qubits separated by tens of micrometers are expected to facilitate scalable quantum computing architectures for spin qubits in electrically-defined quantum dots. These links create space for classical on-chip control electronics between qubit arrays, which can help to alleviate the so-called wiring bottleneck. A promising method of achieving coherent links between distant spin qubits consists of shuttling the spin through an array of quantum dots. Here, we use a linear array of four tunnel-coupled quantum dots in a 28Si/SiGe heterostructure to create a short quantum link. We move an electron spin through the quantum dot array by adjusting the electrochemical potential for each quantum dot sequentially. By pulsing the gates repeatedly, we shuttle an electron forward and backward through the array up to 250 times, which corresponds to a total distance of approximately 80 μm. We make an estimate of the spin-flip probability per hop in these experiments and conclude that this is well below 0.01% per hop. △ Less

Submitted 12 September, 2022; v1 submitted 2 September, 2022; originally announced September 2022.

Comments: 11 pages, 3 main figures, 6 appendix figures

Journal ref: PRX Quantum 4, 030303, (2023)

Universal control of a six-qubit quantum processor in silicon

Authors: Stephan G. J. Philips, Mateusz T. Mądzik, Sergey V. Amitonov, Sander L. de Snoo, Maximilian Russ, Nima Kalhor, Christian Volk, William I. L. Lawrie, Delphine Brousse, Larysa Tryputen, Brian Paquelet Wuetz, Amir Sammak, Menno Veldhorst, Giordano Scappucci, Lieven M. K. Vandersypen

Abstract: Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity… ▽ More Future quantum computers capable of solving relevant problems will require a large number of qubits that can be operated reliably. However, the requirements of having a large qubit count and operating with high-fidelity are typically conflicting. Spins in semiconductor quantum dots show long-term promise but demonstrations so far use between one and four qubits and typically optimize the fidelity of either single- or two-qubit operations, or initialization and readout. Here we increase the number of qubits and simultaneously achieve respectable fidelities for universal operation, state preparation and measurement. We design, fabricate and operate a six-qubit processor with a focus on careful Hamiltonian engineering, on a high level of abstraction to program the quantum circuits and on efficient background calibration, all of which are essential to achieve high fidelities on this extended system. State preparation combines initialization by measurement and real-time feedback with quantum-non-demolition measurements. These advances will allow for testing of increasingly meaningful quantum protocols and constitute a major stepping stone towards large-scale quantum computers. △ Less

Submitted 18 February, 2022; originally announced February 2022.

Comments: 38 pages (including supplementary material)

Atomic fluctuations lifting the energy degeneracy in Si/SiGe quantum dots

Authors: Brian Paquelet Wuetz, Merritt P. Losert, Sebastian Koelling, Lucas E. A. Stehouwer, Anne-Marije J. Zwerver, Stephan G. J. Philips, Mateusz T. Mądzik, Xiao Xue, Guoji Zheng, Mario Lodari, Sergey V. Amitonov, Nodar Samkharadze, Amir Sammak, Lieven M. K. Vandersypen, Rajib Rahman, Susan N. Coppersmith, Oussama Moutanabbir, Mark Friesen, Giordano Scappucci

Abstract: Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processor… ▽ More Electron spins in Si/SiGe quantum wells suffer from nearly degenerate conduction band valleys, which compete with the spin degree of freedom in the formation of qubits. Despite attempts to enhance the valley energy splitting deterministically, by engineering a sharp interface, valley splitting fluctuations remain a serious problem for qubit uniformity, needed to scale up to large quantum processors. Here, we elucidate and statistically predict the valley splitting by the holistic integration of 3D atomic-level properties, theory and transport. We find that the concentration fluctuations of Si and Ge atoms within the 3D landscape of Si/SiGe interfaces can explain the observed large spread of valley splitting from measurements on many quantum dot devices. Against the prevailing belief, we propose to boost these random alloy composition fluctuations by incorporating Ge atoms in the Si quantum well to statistically enhance valley splitting. △ Less

Submitted 1 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Journal ref: Nature Communications 13, 7730 (2022)

Beating the thermal limit of qubit initialization with a Bayesian Maxwell's demon

Authors: Mark A. I. Johnson, Mateusz T. Mądzik, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, David N. Jamieson, Andrew Dzurak, Andrea Morello

Abstract: Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is ba… ▽ More Fault-tolerant quantum computing requires initializing the quantum register in a well-defined fiducial state. In solid-state systems, this is typically achieved through thermalization to a cold reservoir, such that the initialization fidelity is fundamentally limited by temperature. Here, we present a method of preparing a fiducial quantum state with a confidence beyond the thermal limit. It is based on real time monitoring of the qubit through a negative-result measurement -- the equivalent of a `Maxwell's demon' that triggers the experiment only upon the appearance of a qubit in the lowest-energy state. We experimentally apply it to initialize an electron spin qubit in silicon, achieving a ground-state initialization fidelity of 98.9(4)%, corresponding to a 20$\times$ reduction in initialization error compared to the unmonitored system. A fidelity approaching 99.9% could be achieved with realistic improvements in the bandwidth of the amplifier chain or by slowing down the rate of electron tunneling from the reservoir. We use a nuclear spin ancilla, measured in quantum nondemolition mode, to prove the value of the electron initialization fidelity far beyond the intrinsic fidelity of the electron readout. However, the method itself does not require an ancilla for its execution, saving the need for additional resources. The quantitative analysis of the initialization fidelity reveals that a simple picture of spin-dependent electron tunneling does not correctly describe the data. Our digital `Maxwell's demon' can be applied to a wide range of quantum systems, with minimal demands on control and detection hardware. △ Less

Submitted 1 November, 2022; v1 submitted 5 October, 2021; originally announced October 2021.

Comments: 15 pages, 7 figures

Journal ref: Physical Review X 12, (2022)

Precision tomography of a three-qubit donor quantum processor in silicon

Authors: Mateusz T. Mądzik, Serwan Asaad, Akram Youssry, Benjamin Joecker, Kenneth M. Rudinger, Erik Nielsen, Kevin C. Young, Timothy J. Proctor, Andrew D. Baczewski, Arne Laucht, Vivien Schmitt, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Andrew S. Dzurak, Christopher Ferrie, Robin Blume-Kohout, Andrea Morello

Abstract: Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to… ▽ More Nuclear spins were among the first physical platforms to be considered for quantum information processing, because of their exceptional quantum coherence and atomic-scale footprint. However, their full potential for quantum computing has not yet been realized, due to the lack of methods to link nuclear qubits within a scalable device combined with multi-qubit operations with sufficient fidelity to sustain fault-tolerant quantum computation. Here we demonstrate universal quantum logic operations using a pair of ion-implanted 31P donor nuclei in a silicon nanoelectronic device. A nuclear two-qubit controlled-Z gate is obtained by imparting a geometric phase to a shared electron spin, and used to prepare entangled Bell states with fidelities up to 94.2(2.7)%. The quantum operations are precisely characterised using gate set tomography (GST), yielding one-qubit average gate fidelities up to 99.95(2)%, two-qubit average gate fidelity of 99.37(11)% and two-qubit preparation/measurement fidelities of 98.95(4)%. These three metrics indicate that nuclear spins in silicon are approaching the performance demanded in fault-tolerant quantum processors. We then demonstrate entanglement between the two nuclei and the shared electron by producing a Greenberger-Horne-Zeilinger three-qubit state with 92.5(1.0)% fidelity. Since electron spin qubits in semiconductors can be further coupled to other electrons or physically shuttled across different locations, these results establish a viable route for scalable quantum information processing using donor nuclear and electron spins. △ Less

Submitted 27 January, 2022; v1 submitted 6 June, 2021; originally announced June 2021.

Comments: 51 pages, including supplementary information. v3 reflects the final published version

Journal ref: Nature 601, 348 (2022)

An ultra-stable 1.5 tesla permanent magnet assembly for qubit experiments at cryogenic temperatures

Authors: C. Adambukulam, V. K. Sewani, H. G. Stemp, S. Asaad, M. T. Mądzik, A. Morello, A. Laucht

Abstract: Magnetic fields are a standard tool in the toolbox of every physicist, and are required for the characterization of materials, as well as the polarization of spins in nuclear magnetic resonance or electron paramagnetic resonance experiments. Quite often a static magnetic field of sufficiently large, but fixed magnitude is suitable for these tasks. Here we present a permanent magnet assembly that c… ▽ More Magnetic fields are a standard tool in the toolbox of every physicist, and are required for the characterization of materials, as well as the polarization of spins in nuclear magnetic resonance or electron paramagnetic resonance experiments. Quite often a static magnetic field of sufficiently large, but fixed magnitude is suitable for these tasks. Here we present a permanent magnet assembly that can achieve magnetic field strengths of up to 1.5T over an air gap length of 7mm. The assembly is based on a Halbach array of neodymium (NdFeB) magnets, with the inclusion of the soft magnetic material Supermendur to boost the magnetic field strength inside the air gap. We present the design, simulation and characterization of the permanent magnet assembly, measuring an outstanding magnetic field stability with a drift rate of |D| < 2.8 ppb/h. Our measurements demonstrate that this assembly can be used for spin qubit experiments inside a dilution refrigerator, successfully replacing the more expensive and bulky superconducting solenoids. △ Less

Submitted 11 August, 2021; v1 submitted 5 October, 2020; originally announced October 2020.

Comments: 10 pages, 5 figures

Conditional quantum operation of two exchange-coupled single-donor spin qubits in a MOS-compatible silicon device

Authors: Mateusz T. Mądzik, Arne Laucht, Fay E. Hudson, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Kohei M. Itoh, Andrew S. Dzurak, Andrea Morello

Abstract: Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential s… ▽ More Silicon nanoelectronic devices can host single-qubit quantum logic operations with fidelity better than 99.9%. For the spins of an electron bound to a single donor atom, introduced in the silicon by ion implantation, the quantum information can be stored for nearly 1 second. However, manufacturing a scalable quantum processor with this method is considered challenging, because of the exponential sensitivity of the exchange interaction that mediates the coupling between the qubits. Here we demonstrate the conditional, coherent control of an electron spin qubit in an exchange-coupled pair of $^{31}$P donors implanted in silicon. The coupling strength, $J = 32.06 \pm 0.06$ MHz, is measured spectroscopically with unprecedented precision. Since the coupling is weaker than the electron-nuclear hyperfine coupling $A \approx 90$ MHz which detunes the two electrons, a native two-qubit Controlled-Rotation gate can be obtained via a simple electron spin resonance pulse. This scheme is insensitive to the precise value of $J$, which makes it suitable for the scale-up of donor-based quantum computers in silicon that exploit the Metal-Oxide-Semiconductor fabrication protocols commonly used in the classical electronics industry. △ Less

Submitted 29 June, 2020; v1 submitted 8 June, 2020; originally announced June 2020.

Comments: 10 pages, 5 figures, plus Supplementary Information. v2 contains additional references, and a simpler explanation of two-qubit CROT gates for donors in silicon

Journal ref: Nature Communications 12:181 (2021)

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Authors: Mateusz T. Mądzik, Thaddeus D. Ladd, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P… ▽ More The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors. △ Less

Submitted 25 July, 2019; originally announced July 2019.

Comments: 11 pages, 5 figures

Journal ref: Science Advances 6 : eaba3442 (2020)

Coherent electrical control of a single high-spin nucleus in silicon

Authors: Serwan Asaad, Vincent Mourik, Benjamin Joecker, Mark A. I. Johnson, Andrew D. Baczewski, Hannes R. Firgau, Mateusz T. Mądzik, Vivien Schmitt, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to… ▽ More Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: Main text and figures followed by methods, extended data, and supplementary information

Journal ref: Nature 579, 205 (2020)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Authors: Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik, Mark A. I. Johnson, Benjamin Joecker, Arne Laucht, Fay E. Hudson, Kohei M. Itoh, A. Malwin Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Robert Joynt, Andrea Morello

Abstract: We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor… ▽ More We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $μ_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes. △ Less

Submitted 26 March, 2019; v1 submitted 17 December, 2018; originally announced December 2018.

Comments: 14 pages, 8 figures. Version 2 has extensive text revisions, typo corrections, and two extra authors

Journal ref: Phys. Rev. B 99, 205306 (2019)