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Quantum well confinement and competitive radiative pathways in the luminescence of black phosphorus layers
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Sébastien Roux,
Victor Zatko,
Bruno Dlubak,
Pierre Seneor,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the…
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Black phosphorus (BP) stands out from other 2D materials by the wide amplitude of the band-gap energy (Delta(Eg)) that sweeps an optical window from Visible (VIS) to Infrared (IR) wavelengths, depending on the layer thickness. This singularity made the optical and excitonic properties of BP difficult to map. Specifically, the literature lacks in presenting experimental and theoretical data on the optical properties of BP on an extended thickness range. Here we report the study of an ensemble of photoluminescence spectra from 79 passivated BP flakes recorded at 4 K with thicknesses ranging from 4 nm to 700 nm, obtained by mechanical exfoliation. We observe that the exfoliation steps induce additional defects states that compete the radiative recombination from bound excitons observed in the crystal. We also show that the evolution of the photoluminescence energy versus thickness follows a quantum well confinement model appreciable from a thickness predicted and probed at 25 nm. The BP slabs placed in different 2D heterostructures show that the emission energy is not significantly modulated by the dielectric environment. Introduction Confinement effects
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Submitted 2 December, 2022;
originally announced December 2022.
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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
Authors:
N. Temahuki,
F. Jomard,
A. Lusson,
I. Stenger,
S. Hassani,
J. Chevallier,
J. M. Chauveau,
C. Morhain,
J. Barjon
Abstract:
Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room…
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Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited by the trapping of deuterium on a nitrogen-related trap. The SIMS profiles are analyzed using a two-trap model including a shallow trap, associated with a fast diffusion, and a deep trap, related to nitrogen. The capture radius of the nitrogen-related trap is determined to be 20 times smaller than the value expected for nitrogen-deuterium pairs formed by coulombic attraction between D+ and nitrogen-related acceptors. The (N2)O deep donor is proposed as the deep trapping site for deuterium and accounts well for the small capture radius and the observed photoluminescence quenching and recovery after deuteration of the ZnO:N epilayers. It is also found that this defect is by far the N-related defect with the highest concentration in the studied samples.
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Submitted 9 March, 2021;
originally announced March 2021.
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Excitons in bulk black phosphorus evidenced by photoluminescence at low temperature
Authors:
Etienne Carré,
Lorenzo Sponza,
Alain Lusson,
Ingrid Stenger,
Etienne Gaufrès,
Annick Loiseau,
Julien Barjon
Abstract:
Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one…
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Atomic layers of Black Phosphorus (BP) present unique opto-electronic properties dominated by a direct tunable bandgap in a wide spectral range from visible to mid-infrared. In this work, we investigate the infrared photoluminescence of BP single crystals at very low temperature. Near-bandedge recombinations are observed at 2 K, including dominant excitonic transitions at 0.276 eV and a weaker one at 0.278 eV. The free-exciton binding energy is calculated with an anisotropic Wannier-Mott model and found equal to 9.1 meV. On the contrary, the PL intensity quenching of the 0.276 eV peak at high temperature is found with a much smaller activation energy, attributed to the localization of free excitons on a shallow impurity. This analysis leads us to attribute respectively the 0.276 eV and 0.278 eV PL lines to bound excitons and free excitons in BP. As a result, the value of bulk BP bandgap is refined to 0.287 eV at 2K.
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Submitted 29 October, 2020;
originally announced October 2020.
