Showing 1–2 of 2 results for author: Lopes, N M S

Observation of quasi bound states in open quantum wells of cesiated p-doped GaN surfaces

Authors: Mylène Sauty, Jean-Philippe Banon, Nicolas M. S. Lopes, Tanay Tak, James S. Speck, Claude Weisbuch, Jacques Peretti

Abstract: The quantized electron states in the downward band bending region (BBR) at the surface of cesiated p-type GaN are investigated. We theoretically predict the existence of metastable resonant states in the BBR with an intrinsic life-time around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-bandgap photoem… ▽ More The quantized electron states in the downward band bending region (BBR) at the surface of cesiated p-type GaN are investigated. We theoretically predict the existence of metastable resonant states in the BBR with an intrinsic life-time around 20 fs. Their experimental observation requires access to the empty conduction band of the cesiated semiconductor, which is possible with near-bandgap photoemission spectroscopy. The energy distribution of the photoemitted electrons shows contributions coming from electrons accumulated into the resonant states at energies which agree with calculations. △ Less

Submitted 28 March, 2025; originally announced March 2025.

Evidence of localization effect on photoelectron transport induced by alloy disorder in nitride semiconductor compounds

Authors: Mylène Sauty, Nicolas M. S. Lopes, Jean-Philippe Banon, Yves Lassailly, Lucio Martinelli, Abdullah Alhassan, Shuji Nakamura, James S. Speck, Claude Weisbuch, Jacques Peretti

Abstract: Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribu… ▽ More Near-bandgap photoemission spectroscopy experiments were performed on p-GaN and p-InGaN/GaN photocathodes activated to negative electron affinity. The photoemission quantum yield of the InGaN samples drops by more than one order of magnitude when the temperature is decreased while it remains constant on the GaN sample. This indicates a freezing of photoelectron transport in p-InGaN that we attribute to electron localization in the fluctuating potential induced by the alloy disorder. This interpretation is confirmed by the disappearence at low temperature of the peak in the photoemission spectrum that corresponds to the contribution of the photoelectrons relaxed at the bottom of the InGaN conduction band. △ Less

Submitted 10 January, 2022; originally announced January 2022.