Showing 1–8 of 8 results for author: Lok, J G S

Exciton condensate at a total filling factor of 1 in Corbino 2D electron bilayers

Authors: L. Tiemann, J. G. S. Lok, W. Dietsche, K. von Klitzing, K. Muraki, D. Schuh, W. Wegscheider

Abstract: Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current ca… ▽ More Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current. △ Less

Submitted 7 December, 2007; v1 submitted 31 July, 2007; originally announced July 2007.

Journal ref: Phys. Rev. B 77, 033306 (2008)

Electron spin resonance on a 2-dimensional electron gas in a single AlAs quantum well

Authors: M. Schulte, J. G. S. Lok, G. Denninger, W. Dietsche

Abstract: Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR amplitude and its temperature dependence suggest that the signal originates from the effective magnetic field caused by the spin orbit-interaction and a modulation… ▽ More Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR amplitude and its temperature dependence suggest that the signal originates from the effective magnetic field caused by the spin orbit-interaction and a modulation of the electron wavevector caused by the microwave electric field. This contrasts markedly to conventional ESR that detects through the microwave magnetic field. △ Less

Submitted 18 February, 2005; originally announced February 2005.

Comments: 4 pages, 4 figures

Activated Transport in the individual Layers that form the $ν_T$=1 Exciton Condensate

Authors: R. D. Wiersma, J. G. S. Lok, S. Kraus, W. Dietsche, K. von Klitzing, D. Schuh, M. Bichler, H. -P. Tranitz, W. Wegscheider

Abstract: We observe the total filling factor $ν_{T}$=1 quantum Hall state in a bilayer two-dimensional electron system with virtually no tunnelling. We find thermally activated transport in the balanced system with a monotonic increase of the activation energy with decreasing $d/\ell_B$ below 1.65. In the imbalanced system we find activated transport in each of the layers separately, yet the activation e… ▽ More We observe the total filling factor $ν_{T}$=1 quantum Hall state in a bilayer two-dimensional electron system with virtually no tunnelling. We find thermally activated transport in the balanced system with a monotonic increase of the activation energy with decreasing $d/\ell_B$ below 1.65. In the imbalanced system we find activated transport in each of the layers separately, yet the activation energies show a striking asymmetry around the balance point. This implies that the gap to charge-excitations in the {\em individual} layers is substantially different for positive and negative imbalance. △ Less

Submitted 22 July, 2004; originally announced July 2004.

Comments: 4 pages. 4 figures

Coulomb Drag as a Probe of the Nature of Compressible States in a Magnetic Field

Authors: K. Muraki, J. G. S. Lok, S. Kraus, W. Dietsche, K. von Klitzing, D. Schuh, M. Bichler, W. Wegscheider

Abstract: Magneto-drag reveals the nature of compressible states and the underlying interplay of disorder and interactions. At ν=3/2 a clear T^{4/3} dependence is observed, which signifies the metallic nature of the N=0 Landau level. In contrast, drag in higher Landau levels reveals an additional contribution, which anomalously grows with decreasing T before turning to zero following a thermal activation… ▽ More Magneto-drag reveals the nature of compressible states and the underlying interplay of disorder and interactions. At ν=3/2 a clear T^{4/3} dependence is observed, which signifies the metallic nature of the N=0 Landau level. In contrast, drag in higher Landau levels reveals an additional contribution, which anomalously grows with decreasing T before turning to zero following a thermal activation law. The anomalous drag is discussed in terms of electron-hole asymmetry arising from disorder and localization, and the crossover to normal drag at high fields as due to screening of disorder. △ Less

Submitted 7 November, 2003; originally announced November 2003.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 92, 246801 (2004)

Closely spaced and separately contacted 2d electron and 2d hole gases by in situ focussed ion implantation

Authors: M. Pohlt, M. Lynass, J. G. S. Lok, W. Dietsche, K. v. Klitzing, K. Eberl, R. Muhle

Abstract: Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and… ▽ More Separately contacted double layers of a 2d electron - 2d hole gases have been prepared in GaAs separated by thin AlGaAs barriers with thicknesses down to 15 nm. The molecular-beam-epitaxial growth was interrupted just before the barrier in order to use in situ focussed-ion-beam implantation to pattern contacts which extend underneath the barrier. The two charge gases form upon biasing the p- and n-type contacts underneath and above the barrier in forward direction and show independent transistor-like behavior. △ Less

Submitted 28 March, 2001; originally announced March 2001.

Comment on 'Missing 2$k_F$ Response for Composite Fermions in Phonon Drag'

Authors: U. Zeitler, J. G. S. Lok

Abstract: A Comment on the Letter by S. Zelakiewicz et al., Phys. Rev. Lett. 85, 1942 (2000). A Comment on the Letter by S. Zelakiewicz et al., Phys. Rev. Lett. 85, 1942 (2000). △ Less

Submitted 15 May, 2001; v1 submitted 26 February, 2001; originally announced February 2001.

Comments: 1 page, 1 figure Comment on S. Zelakiewicz et al., Phys. Rev. Lett. 85, 1942 (2000)

Journal ref: Phys. Rev. Lett. 88, 149701 (2002)

Spin effects in the magneto-drag between double quantum wells

Authors: J. G. S. Lok, S. Kraus, M. Pohlt, W. Dietsche, K. von Klitzing, W. Wegscheider, M. Bichler

Abstract: We report on the selectivity to spin in a drag measurement. This selectivity to spin causes deep minima in the magneto-drag at odd fillingfactors for matched electron densities at magnetic fields and temperatures at which the bare spin energy is only one tenth of the temperature. For mismatched densities the selectivity causes a novel 1/B-periodic oscillation, such that negative minima in the dr… ▽ More We report on the selectivity to spin in a drag measurement. This selectivity to spin causes deep minima in the magneto-drag at odd fillingfactors for matched electron densities at magnetic fields and temperatures at which the bare spin energy is only one tenth of the temperature. For mismatched densities the selectivity causes a novel 1/B-periodic oscillation, such that negative minima in the drag are observed whenever the majority spins at the Fermi energies of the two-dimensional electron gasses (2DEGs) are anti-parallel, and positive maxima whenever the majority spins at the Fermi energies are parallel. △ Less

Submitted 1 November, 2000; originally announced November 2000.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. B 63, 041305(R)

Hysteretic behavior and evidence for domain formation in a double-layer quantum Hall system at total filling factor 2

Authors: J. G. S. Lok, A. K. Geim, B. Tieke, J. C. Maan, S. T. Stoddart, R. J. Hyndman, B. L. Gallagher, M. Henini

Abstract: We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is att… ▽ More We report anomalous behavior in a double-layer two dimensional hole gas (2DHG) at even integer filling factors which includes hysteresis in the longitudinal and Hall resistances and a very weak temperature dependence of the resistance minima. All anomalies disappear and the conventional quantum Hall effect behavior recovers when a thin metal film is placed on top of the 2DHG. The behavior is attributed to presence of the theoretically predicted magnetic ordering at even integer filling factors which causes the formation of macroscopic spin-charge domains. △ Less

Submitted 24 April, 1998; v1 submitted 23 April, 1998; originally announced April 1998.

Comments: 3 pages, 4 figures, uses rotating, uses epsfig

Report number: QHE-98-1