Showing 1–6 of 6 results for author: Llinás, J

Growth optimization and device integration of narrow-bandgap graphene nanoribbons

Authors: Gabriela Borin Barin, Qiang Sun, Marco Di Giovannantonio, Cheng-Zhuo Du, Xiao-Ye Wang, Juan Pablo Llinas, Zafer Mutlu, Yuxuan Lin, Jan Wilhelm, Jan Overbeck, Colin Daniels, Michael Lamparski, Hafeesudeen Sahabudeen, Mickael L. Perrin, José I. Urgel, Shantanu Mishra, Amogh Kinikar, Roland Widmer, Samuel Stolz, Max Bommert, Carlo Pignedoli, Xinliang Feng, Michel Calame, Klaus Müllen, Akimitsu Narita , et al. (4 additional authors not shown)

Abstract: The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for succe… ▽ More The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach offers a unique platform for all-carbon electronic devices but requires careful optimization of the growth conditions to match structural requirements for successful device integration, with GNR length being the most critical parameter. In this work, we study the growth, characterization, and device integration of 5-atom wide armchair GNRs (5-AGNRs), which are expected to have an optimal band gap as active material in switching devices. 5-AGNRs are obtained via on-surface synthesis under ultra-high vacuum conditions from Br- and I-substituted precursors. We show that the use of I-substituted precursors and the optimization of the initial precursor coverage quintupled the average 5-AGNR length. This significant length increase allowed us to integrate 5-AGNRs into devices and to realize the first field-effect transistor based on narrow bandgap AGNRs that shows switching behavior at room temperature. Our study highlights that optimized growth protocols can successfully bridge between the sub-nanometer scale, where atomic precision is needed to control the electronic properties, and the scale of tens of nanometers relevant for successful device integration of GNRs. △ Less

Submitted 2 February, 2022; originally announced February 2022.

Scaling and Statistics of Bottom-Up Synthesized Armchair Graphene Nanoribbon Transistors

Authors: Yuxuan Lin, Zafer Mutlu, Gabriela Borin Barin, Jenny Hong, Juan Pablo Llinas, Akimitsu Narita, Hanuman Singh, Klaus Müllen, Pascal Ruffieux, Roman Fasel, Jeffrey Bokor

Abstract: Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a st… ▽ More Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or structural parameters obtained from advanced microscopy and measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy to connect the nanomaterial morphologies and the device performance through a Monte Carlo device model and apply it to understand the scaling trends of bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed for GNR transistors with channel length down to 7 nm. The impacts of the GNR spatial distributions and the device geometries on the device performance are investigated systematically through comparison of experimental data with the model. Through this study, challenges and opportunities of transistor technologies based on bottom-up synthesized GNRs are pinpointed, paving the way to the further improvement of the GNR device performance for future transistor technology nodes. △ Less

Submitted 23 January, 2022; originally announced January 2022.

Ontology and Cognitive Outcomes

Authors: David Limbaugh, Jobst Landgrebe, David Kasmier, Ronald Rudnicki, James Llinas, Barry Smith

Abstract: Here we understand 'intelligence' as referring to items of knowledge collected for the sake of assessing and maintaining national security. The intelligence community (IC) of the United States (US) is a community of organizations that collaborate in collecting and processing intelligence for the US. The IC relies on human-machine-based analytic strategies that 1) access and integrate vast amounts… ▽ More Here we understand 'intelligence' as referring to items of knowledge collected for the sake of assessing and maintaining national security. The intelligence community (IC) of the United States (US) is a community of organizations that collaborate in collecting and processing intelligence for the US. The IC relies on human-machine-based analytic strategies that 1) access and integrate vast amounts of information from disparate sources, 2) continuously process this information, so that, 3) a maximally comprehensive understanding of world actors and their behaviors can be developed and updated. Herein we describe an approach to utilizing outcomes-based learning (OBL) to support these efforts that is based on an ontology of the cognitive processes performed by intelligence analysts. Of particular importance to the Cognitive Process Ontology is the class Representation that is Warranted. Such a representation is descriptive in nature and deserving of trust in its veridicality. The latter is because a Representation that is Warranted is always produced by a process that was vetted (or successfully designed) to reliably produce veridical representations. As such, Representations that are Warranted are what in other contexts we might refer to as 'items of knowledge'. △ Less

Submitted 8 January, 2021; v1 submitted 16 May, 2020; originally announced May 2020.

Comments: 19 pages, 6 figures

Journal ref: Journal of Knowledge Structures & Systems, 1(1), 3-22 (2020)

Negative Differential Resistance and Steep Switching in Chevron Graphene Nanoribbon Field Effect Transistors

Authors: Samuel Smith, Juan-Pablo Llinás, Jeffrey Bokor, Sayeef Salahuddin

Abstract: Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steep-slope switching with 6 mV/decade subtheshold swing over five orders of magnitude… ▽ More Ballistic quantum transport calculations based on the non-equilbrium Green's function formalism show that field-effect transistor devices made from chevron-type graphene nanoribbons (CGNRs) could exhibit negative differential resistance with peak-to-valley ratios in excess of 4800 at room temperature as well as steep-slope switching with 6 mV/decade subtheshold swing over five orders of magnitude and ON-currents of 88$μ$A/$μ$m. This is enabled by the superlattice-like structure of these ribbons that have large periodic unit cells with regions of different effective bandgap, resulting in minibands and gaps in the density of states above the conduction band edge. The CGNR ribbon used in our proposed device has been previously fabricated with bottom-up chemical synthesis techniques and could be incorporated into an experimentally-realizable structure. △ Less

Submitted 16 March, 2017; originally announced March 2017.

Short-Channel Field Effect Transistors with 9-Atom and 13-Atom wide Graphene Nanoribbons

Authors: Juan Pablo Llinas, Andrew Fairbrother, Gabriela Borin Barin, Wu Shi, Kyunghoon Lee, Shuang Wu, Byung Yong Choi, Rohit Braganza, Jordan Lear, Nicholas Kau, Wonwoo Choi, Chen Chen, Zahra Pedramrazi, Tim Dumslaff, Akimitsu Narita, Xinliang Feng, Klaus Müllen, Felix Fischer, Alex Zettl, Pascal Ruffieux, Eli Yablonovitch, Michael Crommie, Roman Fasel, Jeffrey Bokor

Abstract: Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) dev… ▽ More Bottom-up synthesized GNRs and GNR heterostructures have promising electronic properties for high performance field effect transistors (FETs) and ultra-low power devices such as tunnelling FETs. However, the short length and wide band gap of these GNRs have prevented the fabrication of devices with the desired performance and switching behaviour. Here, by fabricating short channel (Lch ~20 nm) devices with a thin, high-k gate dielectric and a 9-atom wide (0.95 nm) armchair GNR as the channel material, we demonstrate FETs with high on-current (Ion >1 uA at Vd = -1 V) and high Ion/Ioff ~10^5 at room temperature. We find that the performance of these devices is limited by tunnelling through the Schottky barrier (SB) at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high performance short-channel FETs with bottom-up synthesized armchair GNRs. △ Less

Submitted 27 January, 2017; v1 submitted 21 May, 2016; originally announced May 2016.

Comments: v3: added local back gate data

Journal ref: Nature Communications 8, Article number: 633 (2017)

Thermal Conductivity of Chirality-Sorted Carbon Nanotube Networks

Authors: Feifei Lian, Juan P. Llinas, Zuanyi Li, David Estrada, Eric Pop

Abstract: The thermal properties of single-walled carbon nanotubes (SWNTs) are of significant interest, yet their dependence on SWNT chirality has been, until now, not explored experimentally. Here we used electrical heating and infrared thermal imaging to simultaneously study thermal and electrical transport in chirality-sorted SWNT networks. We examined solution processed 90% semiconducting, 90% metallic,… ▽ More The thermal properties of single-walled carbon nanotubes (SWNTs) are of significant interest, yet their dependence on SWNT chirality has been, until now, not explored experimentally. Here we used electrical heating and infrared thermal imaging to simultaneously study thermal and electrical transport in chirality-sorted SWNT networks. We examined solution processed 90% semiconducting, 90% metallic, purified unsorted (66% semiconducting), and as-grown HiPco SWNT films. The thermal conductivities of these films range from 80 to 370 W/m/K but are not controlled by chirality, instead being dependent on the morphology (i.e. mass and junction density, quasi-alignment) of the networks. The upper range of the thermal conductivities measured is comparable to that of the best metals (Cu and Ag) but with over an order of magnitude lower mass density. This study reveals important factors controlling the thermal properties of light-weight chirality-sorted SWNT films, for potential thermal and thermoelectric applications. △ Less

Submitted 27 January, 2016; originally announced January 2016.