-
Asymptotic properties of eigenmatrices of a large sample covariance matrix
Authors:
Z. D. Bai,
H. X. Liu,
W. K. Wong
Abstract:
Let $S_n=\frac{1}{n}X_nX_n^*$ where $X_n=\{X_{ij}\}$ is a $p\times n$ matrix with i.i.d. complex standardized entries having finite fourth moments. Let $Y_n(\mathbf {t}_1,\mathbf {t}_2,σ)=\sqrt{p}({\mathbf {x}}_n(\mathbf {t}_1)^*(S_n+σI)^{-1}{\mathbf {x}}_n(\mathbf {t}_2)-{\mathbf {x}}_n(\mathbf {t}_1)^*{\mathbf {x}}_n(\mathbf {t}_2)m_n(σ))$ in which $σ>0$ and $m_n(σ)=\int\frac{dF_{y_n}(x)}{x+σ}$…
▽ More
Let $S_n=\frac{1}{n}X_nX_n^*$ where $X_n=\{X_{ij}\}$ is a $p\times n$ matrix with i.i.d. complex standardized entries having finite fourth moments. Let $Y_n(\mathbf {t}_1,\mathbf {t}_2,σ)=\sqrt{p}({\mathbf {x}}_n(\mathbf {t}_1)^*(S_n+σI)^{-1}{\mathbf {x}}_n(\mathbf {t}_2)-{\mathbf {x}}_n(\mathbf {t}_1)^*{\mathbf {x}}_n(\mathbf {t}_2)m_n(σ))$ in which $σ>0$ and $m_n(σ)=\int\frac{dF_{y_n}(x)}{x+σ}$ where $F_{y_n}(x)$ is the Marčenko--Pastur law with parameter $y_n=p/n$; which converges to a positive constant as $n\to\infty$, and ${\mathbf {x}}_n(\mathbf {t}_1)$ and ${\mathbf {x}}_n(\mathbf {t}_2)$ are unit vectors in ${\Bbb{C}}^p$, having indices $\mathbf {t}_1$ and $\mathbf {t}_2$, ranging in a compact subset of a finite-dimensional Euclidean space. In this paper, we prove that the sequence $Y_n(\mathbf {t}_1,\mathbf {t}_2,σ)$ converges weakly to a $(2m+1)$-dimensional Gaussian process. This result provides further evidence in support of the conjecture that the distribution of the eigenmatrix of $S_n$ is asymptotically close to that of a Haar-distributed unitary matrix.
△ Less
Submitted 30 December, 2011;
originally announced January 2012.
-
The role of Cr substitution on the ferromagnetic properties of Ga1-xCrxN
Authors:
R. K. Singh,
Stephen Y. Wu,
H. X. Liu,
Lin Gu,
David J. Smith,
N. Newman
Abstract:
Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-xCrxN films grown by reactive molecular-beam epitaxy. The morphology of these films and correlation with their magnetic properties has been investigated. Films grown at temperatures below ~ 750oC have up…
▽ More
Angular-dependent channeling Rutherford Backscattering Spectroscopy (c-RBS) has been used to quantify the fraction of Cr atoms on substitutional, interstitial, and random sites in epitaxial Ga1-xCrxN films grown by reactive molecular-beam epitaxy. The morphology of these films and correlation with their magnetic properties has been investigated. Films grown at temperatures below ~ 750oC have up to 90% of Cr occupying substitutional sites. Post-growth annealing at 825oC results in a systematic drop in the fraction of substitutional Cr as well as a fall off in the ferromagnetic signal. The roles of non-substitutional Cr in transferring charge from the Cr t2 band and segregation of substitutional Cr in the loss of magnetism are discussed. Overall, these results provide strong microscopic evidence that Cr-doped III-N systems are dilute magnetic semiconductors.
△ Less
Submitted 26 October, 2004;
originally announced October 2004.
-
Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN
Authors:
H. X. Liu,
Stephen Y. Wu,
R. K. Singh,
Lin Gu,
David J. Smith,
N. R. Dilley,
L. Montes,
M. B. Simmonds,
N. Newman
Abstract:
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction th…
▽ More
We report the observation of ferromagnetism at over 900K in Cr-GaN and Cr-AlN thin films. The saturation magnetization moments in our best films of Cr-GaN and Cr-AlN at low temperatures are 0.42 and 0.6 u_B/Cr atom, respectively, indicating that 14% and 20%, of the Cr atoms, respectively, are magnetically active. While Cr-AlN is highly resistive, Cr-GaN exhibits thermally activated conduction that follows the exponential law expected for variable range hopping between localized states. Hall measurements on a Cr-GaN sample indicate a mobility of 0.06 cm^2/V.s, which falls in the range characteristic of hopping conduction, and a free carrier density (1.4E20/cm^3), which is similar in magnitude to the measured magnetically-active Cr concentration (4.9E19/cm^3). A large negative magnetoresistance is attributed to scattering from loose spins associated with non-ferromagnetic impurities. The results indicate that ferromagnetism in Cr-GaN and Cr-AlN can be attributed to the double exchange mechanism as a result of hopping between near-midgap substitutional Cr impurity bands.
△ Less
Submitted 22 September, 2004; v1 submitted 3 February, 2004;
originally announced February 2004.
-
Synthesis, characterization and modeling of high quality ferromagnetic Cr-doped AlN thin films
Authors:
Stephen Y. Wu,
H. X. Liu,
Lin Gu,
R. K. Singh,
L. Budd,
M. van Schilfgaarde,
M. R. McCartney,
David J. Smith,
N. Newman
Abstract:
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we h…
▽ More
We report a theoretical and experimental investigation of Cr-doped AlN. Density functional calculations predict that the isolated Cr t2 defect level in AlN is 1/3 full, falls approximately at midgap, and broadens into an impurity band for concentrations over 5%. Substitutional Al1-xCrxN random alloys with 0.05 <= x <= 0.15 are predicted to have Curie temperatures over 600 K. Experimentally, we have characterized and optimized the molecular beam epitaxy thin film growth process, and observed room temperature ferromagnetism with a coercive field, Hc, of 120 Oersted. The measured magnetic susceptibility indicates that over 33% of the Cr is magnetically active at room temperature and 40% at low temperature.
△ Less
Submitted 18 December, 2002;
originally announced December 2002.
-
O(α_s) QCD Corrections to Spin Correlations in $e^- e^+ \to t \bar t$ process at the NLC
Authors:
Hong Xuan Liu,
Chong Sheng Li,
Zhen Jun Xiao
Abstract:
Using a Generic spin basis, we present a general formalism of one-loop radiative corrections to the spin correlations in the top quark pair production at the Next Linear Collider, and calculate the O(α_s) QCD corrections under the soft gluon approximation. We find that: (a) in Off-diagonal basis, the $O(α_s)$ QCD corrections to $e_L^- e^+$ ($e_R^- e^+$) scattering process increase the differenti…
▽ More
Using a Generic spin basis, we present a general formalism of one-loop radiative corrections to the spin correlations in the top quark pair production at the Next Linear Collider, and calculate the O(α_s) QCD corrections under the soft gluon approximation. We find that: (a) in Off-diagonal basis, the $O(α_s)$ QCD corrections to $e_L^- e^+$ ($e_R^- e^+$) scattering process increase the differential cross sections of the dominant spin component $t_{\uparrow}\bar{t}_{\downarrow}$ ($t_{\downarrow}\bar{t}_{\uparrow}$) by $\sim 30%$ and $\sim (0.1%-3%)$ depending on the scattering angle for $\sqrt{s}=400 GeV$ and 1 TeV, respectively; (b) in {Off-diagonal basis} (Helicity basis), the dominant spin component makes up 99.8% ($\sim 53%$) of the total cross section at both tree and one-loop level for $\sqrt{s}=400 GeV$, and the Off-diagonal basis therefore remains to be the optimal spin basis after the inclusion of $O(α_s)$ QCD corrections.
△ Less
Submitted 18 March, 1999; v1 submitted 3 January, 1999;
originally announced January 1999.
