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Warping effects in strongly perturbed metrics
Authors:
Marco Frasca,
Riccardo Maria Liberati,
Massimiliano Rossi
Abstract:
A technique devised some years ago permits to study a theory in a regime of strong perturbations. This translates into a gradient expansion that, at the leading order, can recover the BKL solution in general relativity. We solve exactly the leading order Einstein equations in a spherical symmetric case, assuming a Schwarzschild metric under the effect of a time-dependent perturbation, and we show…
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A technique devised some years ago permits to study a theory in a regime of strong perturbations. This translates into a gradient expansion that, at the leading order, can recover the BKL solution in general relativity. We solve exactly the leading order Einstein equations in a spherical symmetric case, assuming a Schwarzschild metric under the effect of a time-dependent perturbation, and we show that the 4-velocity in such a case is multiplied by an exponential warp factor when the perturbation is properly applied. This factor is always greater than one. We will give a closed form solution of this factor for a simple case. Some numerical examples are also given.
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Submitted 1 December, 2020; v1 submitted 21 October, 2020;
originally announced October 2020.
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Magnetism in Mn Nanowires and Clusters as δ-doped Layers in Group IV Semiconductors (Si, Ge)
Authors:
K. R. Simov,
P. -A. Glans,
C. A. Jenkins,
M. Liberati,
P. Reinke1
Abstract:
Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a δ-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge capping layer, which conserves the identity of the δ-doped layer. The ana…
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Mn doping of group-IV semiconductors (Si/Ge) is achieved by embedding a thin Mn-film as a δ-doped layer in group-IV matrix. The Mn-layer consists of a dense layer of monoatomic Mn-wires, which are oriented perpendicular to the Si(001)-(2x1) dimer rows, or Mn-clusters. The nanostructures are covered with an amorphous Si or Ge capping layer, which conserves the identity of the δ-doped layer. The analysis of the bonding environment with STM is combined with the element-specific detection of the magnetic signature with X-ray magnetic circular dichroism. The largest moment (2.5 μB/Mn) is measured for Mn-wires, which have ionic bonding character, with an a-Ge overlayer cap, a-Si capping leads to a slightly reduced moment which has its origin in subtle variation of bonding geometry. Our results directly confirm theoretical predictions on magnetism for Mn-adatoms on Si(001). The moment is quenched to 0.5μB/Mn for δ-doped layers, which are dominated by clusters, and thus develop an antiferromagnetic component from Mn-Mn bonding.
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Submitted 1 July, 2017;
originally announced July 2017.
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The role of magnetic anisotropy in spin filter junctions
Authors:
R. V. Chopdekar,
B. B. Nelson-Cheeseman,
M. Liberati,
E. Arenholz,
Y. Suzuki
Abstract:
We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of polycrystalline materials where the spin filter barrier layer and one of the electrodes are ferromagnetic. These spin filter junctions have relied on the weak magnetic c…
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We have fabricated oxide based spin filter junctions in which we demonstrate that magnetic anisotropy can be used to tune the transport behavior of spin filter junctions. Until recently, spin filters have been largely comprised of polycrystalline materials where the spin filter barrier layer and one of the electrodes are ferromagnetic. These spin filter junctions have relied on the weak magnetic coupling between one ferromagnetic electrode and a barrier layer or the insertion of a nonmagnetic insulating layer in between the spin filter barrier and electrode. We have demonstrated spin filtering behavior in La0.7Sr0.3MnO3/chromite/Fe3O4 junctions without nonmagnetic spacer layers where the interface anisotropy plays a significant role in determining transport behavior. Detailed studies of chemical and magnetic structure at the interfaces indicate that abrupt changes in magnetic anisotropy across the non-isostructural interface is the cause of the significant suppression of junction magnetoresistance in junctions with MnCr2O4 barrier layers.
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Submitted 24 February, 2011;
originally announced February 2011.
