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Machine learning assisted tracking of magnetic objects using quantum diamond magnetometry
Authors:
Fernando Meneses,
Christopher T. -K. Lew,
Anand Sivamalai,
Andy Sayers,
Brant C. Gibson,
Andrew D. Greentree,
Lloyd C. L. Hollenberg,
David A. Simpson
Abstract:
Remote magnetic sensing can be used to monitor the position of objects in real-time, enabling ground transport monitoring, underground infrastructure mapping and hazardous detection. However, magnetic signals are typically weak and complex, requiring sophisticated physical models to analyze them and a detailed knowledge of the system under study, factors that are frequently unavailable. In this wo…
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Remote magnetic sensing can be used to monitor the position of objects in real-time, enabling ground transport monitoring, underground infrastructure mapping and hazardous detection. However, magnetic signals are typically weak and complex, requiring sophisticated physical models to analyze them and a detailed knowledge of the system under study, factors that are frequently unavailable. In this work, we provide a solution to these limitations by demonstrating a Machine Learning (ML) method that can be trained exclusively on experimental data, without the need of any physical model, to predict the position of a magnetic target in real-time. The target can be any object with a magnetic signal above the floor noise, and in this case we use a quantum diamond magnetometer to track variations of few hundreds of nanoteslas produced by an elevator moving along a single axis. The one-dimensional movement is a simple yet challenging scenario, resembling realistic environments such as high buildings, tunnels or train circuits, and is the first step towards building broader applications. Our ML algorithm can be trained in approximately 40 min, achieving over 80% accuracy in predicting the target's position at a rate of 10 Hz, for a positional error tolerance of 30 cm, which is a precise distance compared to the 4-meter spacing between parking levels. Our results open up the possibility to apply this ML method more generally for real-time monitoring of magnetic objects, which will broaden the scope of magnetic detection applications.
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Submitted 20 February, 2025;
originally announced February 2025.
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3D-mapping and manipulation of photocurrent in an optoelectronic diamond device
Authors:
A. A. Wood,
D. J. McCloskey,
N. Dontschuk,
A. Lozovoi,
R. M. Goldblatt,
T. Delord,
D. A. Broadway,
J. -P. Tetienne,
B. C. Johnson,
K. T. Mitchell,
C. T. -K. Lew,
C. A. Meriles,
A. M. Martin
Abstract:
Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailor…
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Characterising charge transport in a material is central to the understanding of its electrical properties, and can usually only be inferred from bulk measurements of derived quantities such as current flow. Establishing connections between host material impurities and transport properties in emerging electronics materials, such as wide bandgap semiconductors, demands new diagnostic methods tailored to these unique systems, and the presence of optically-active defect centers in these materials offers a non-perturbative, in-situ characterisation system. Here, we combine charge-state sensitive optical microscopy and photoelectric detection of nitrogen-vacancy (NV) centres to directly image the flow of charge carriers inside a diamond optoelectronic device, in 3D and with temporal resolution. We optically control the charge state of background impurities inside the diamond on-demand, resulting in drastically different current flow such as filamentary channels nucleating from specific, defective regions of the device. We then optically engineered conducting channels that control carrier flow, key steps towards optically reconfigurable, wide bandgap designer optoelectronics. We anticipate our approach might be extended to probe other wide-bandgap semiconductors (SiC, GaN) relevant to present and emerging electronic technologies.
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Submitted 10 February, 2024;
originally announced February 2024.
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Deep-level structure of the spin-active recombination center in dilute nitrides
Authors:
A. C. Ulibarri,
C. T. K. Lew,
S. Q. Lim,
J. C. McCallum,
B. C. Johnson,
J. C. Harmand,
J. Peretti,
A. C. H. Rowe
Abstract:
A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap el…
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A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment.
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Submitted 1 December, 2023; v1 submitted 27 October, 2023;
originally announced October 2023.
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Piezoresistance in defect-engineered silicon
Authors:
H. Li,
A. Thayil,
C. T. K. Lew,
M. Filoche,
B. C. Johnson,
J. C. McCallum,
S. Arscott,
A. C. H. Rowe
Abstract:
The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa…
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The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $\approx 30$~$μ$V/MPa, yields $π\approx -25 \times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR.
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Submitted 1 January, 2021; v1 submitted 11 August, 2020;
originally announced August 2020.
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Learned Video Compression
Authors:
Oren Rippel,
Sanjay Nair,
Carissa Lew,
Steve Branson,
Alexander G. Anderson,
Lubomir Bourdev
Abstract:
We present a new algorithm for video coding, learned end-to-end for the low-latency mode. In this setting, our approach outperforms all existing video codecs across nearly the entire bitrate range. To our knowledge, this is the first ML-based method to do so.
We evaluate our approach on standard video compression test sets of varying resolutions, and benchmark against all mainstream commercial c…
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We present a new algorithm for video coding, learned end-to-end for the low-latency mode. In this setting, our approach outperforms all existing video codecs across nearly the entire bitrate range. To our knowledge, this is the first ML-based method to do so.
We evaluate our approach on standard video compression test sets of varying resolutions, and benchmark against all mainstream commercial codecs, in the low-latency mode. On standard-definition videos, relative to our algorithm, HEVC/H.265, AVC/H.264 and VP9 typically produce codes up to 60% larger. On high-definition 1080p videos, H.265 and VP9 typically produce codes up to 20% larger, and H.264 up to 35% larger. Furthermore, our approach does not suffer from blocking artifacts and pixelation, and thus produces videos that are more visually pleasing.
We propose two main contributions. The first is a novel architecture for video compression, which (1) generalizes motion estimation to perform any learned compensation beyond simple translations, (2) rather than strictly relying on previously transmitted reference frames, maintains a state of arbitrary information learned by the model, and (3) enables jointly compressing all transmitted signals (such as optical flow and residual).
Secondly, we present a framework for ML-based spatial rate control: namely, a mechanism for assigning variable bitrates across space for each frame. This is a critical component for video coding, which to our knowledge had not been developed within a machine learning setting.
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Submitted 16 November, 2018;
originally announced November 2018.
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Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors
Authors:
D. A. Broadway,
N. Dontschuk,
A. Tsai,
S. E. Lillie,
C. T. -K. Lew,
J. C. McCallum,
B. C. Johnson,
M. W. Doherty,
A. Stacey,
L. C. L. Hollenberg,
J. -P. Tetienne
Abstract:
Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are…
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Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.
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Submitted 13 September, 2018;
originally announced September 2018.
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Giant, anomalous piezo-impedance of silicon-on-insulator
Authors:
Heng Li,
Christopher Tao-Kuan Lew,
Brett Johnson,
Jeffrey McCallum,
Steve Arscott,
Alistair Rowe
Abstract:
A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $ω$, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are $π_R = -1100 \times 10^{-11}$ Pa$^{-1}$ and $π_C = -900 \times 10^{-11}$ Pa…
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A giant, anomalous piezo-response of fully-depleted silicon-on-insulator (FD-SOI) devices under mechanical stress is demonstrated using impedance spectroscopy. This piezo-response strongly depends on the measurement frequency, $ω$, and consists of both a piezoresistance (PZR) and piezocapacitance whose maximum values are $π_R = -1100 \times 10^{-11}$ Pa$^{-1}$ and $π_C = -900 \times 10^{-11}$ Pa$^{-1}$ respectively. These values should be compared with the usual bulk PZR in p-type silicon, $π_R= 70 \times 10^{-11}$ Pa$^{-1}$. The observations are well described using models of space charge limited electron and hole currents in the presence of fast electronic traps having stress-dependent capture ($ω_c$) and emission rates. Under steady-state conditions (i.e. when $ω\ll ω_c$) where the impedance spectroscopy measurements yield results that are directly comparable with previously published reports of PZR in depleted, silicon nano-objects, the overall piezo-response is just the usual, bulk silicon PZR. Anomalous PZR is observed only under non-steady-state conditions when $ω\approx ω_c$, with a symmetry suggesting that the electro-mechanically active fast traps are native Pb$_0$ interface defects. The observations suggest new functionalities for FD-SOI, and shed light on the debate over the PZR of carrier depleted nano-silicon.
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Submitted 29 November, 2018; v1 submitted 29 January, 2018;
originally announced January 2018.
