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ESCAPE: Efficient Synthesis of Calibrations for Adaptive optics through Pseudo-synthetic and Empirical methods
Authors:
Jacob Taylor,
Robin Swanson,
Parker Levesque,
Masen Lamb,
Amali Vaz,
Manny Montoya,
Andrew Gardner,
Katie M. Morzinski,
Suresh Sivanandam
Abstract:
With the commissioning of the refurbished adaptive secondary mirror (ASM) for the 6.5-meter MMT Observatory under way, special consideration had to be made to properly calibrate the mirror response functions to generate an interaction matrix (IM). The commissioning of the ASM is part of the MMT Adaptive optics exoPlanet characterization System (MAPS) upgrade the observatory's legacy adaptive optic…
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With the commissioning of the refurbished adaptive secondary mirror (ASM) for the 6.5-meter MMT Observatory under way, special consideration had to be made to properly calibrate the mirror response functions to generate an interaction matrix (IM). The commissioning of the ASM is part of the MMT Adaptive optics exoPlanet characterization System (MAPS) upgrade the observatory's legacy adaptive optics (AO) system. Unlike most AO systems, MAPS employs a convex ASM which prevents the introduction of a calibration source capable of simultaneously illuminating its ASM and wavefront sensor (WFS). This makes calibration of the AO system a significant hurdle in commissioning. To address this, we have employed a hybrid calibration strategy we call the Efficient Synthesis of Calibrations for Adaptive Optics through Pseudo-synthetic and Empirical methods (ESCAPE). ESCAPE combines the DO-CRIME on-sky calibration method with the SPRINT method for computing pseudo-synthetic calibration matrices. To monitor quasi-static system change, the ESCAPE methodology rapidly and continuously generates pseudo-synthetic calibration matrices using continual empirical feedback in either open or closed-loop. In addition, by measuring the current IM in the background while in close-loop, we are also able to measure the optical gains for pyramid wavefront sensor (PyWFS) systems. In this paper, we will provide the mathematical foundation of the ESCAPE calibration strategy and on-sky results from its application in calibrating the MMT Observatory's ASM. Additionally, we will showcase the validation of our approach from our AO testbed and share preliminary on-sky results from MMT.
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Submitted 13 August, 2024;
originally announced August 2024.
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Low latency optical-based mode tracking with machine learning deployed on FPGAs on a tokamak
Authors:
Yumou Wei,
Ryan F. Forelli,
Chris Hansen,
Jeffrey P. Levesque,
Nhan Tran,
Joshua C. Agar,
Giuseppe Di Guglielmo,
Michael E. Mauel,
Gerald A. Navratil
Abstract:
Active feedback control in magnetic confinement fusion devices is desirable to mitigate plasma instabilities and enable robust operation. Optical high-speed cameras provide a powerful, non-invasive diagnostic and can be suitable for these applications. In this study, we process fast camera data, at rates exceeding 100kfps, on $\textit{in situ}$ Field Programmable Gate Array (FPGA) hardware to trac…
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Active feedback control in magnetic confinement fusion devices is desirable to mitigate plasma instabilities and enable robust operation. Optical high-speed cameras provide a powerful, non-invasive diagnostic and can be suitable for these applications. In this study, we process fast camera data, at rates exceeding 100kfps, on $\textit{in situ}$ Field Programmable Gate Array (FPGA) hardware to track magnetohydrodynamic (MHD) mode evolution and generate control signals in real-time. Our system utilizes a convolutional neural network (CNN) model which predicts the $n$=1 MHD mode amplitude and phase using camera images with better accuracy than other tested non-deep-learning-based methods. By implementing this model directly within the standard FPGA readout hardware of the high-speed camera diagnostic, our mode tracking system achieves a total trigger-to-output latency of 17.6$μ$s and a throughput of up to 120kfps. This study at the High Beta Tokamak-Extended Pulse (HBT-EP) experiment demonstrates an FPGA-based high-speed camera data acquisition and processing system, enabling application in real-time machine-learning-based tokamak diagnostic and control as well as potential applications in other scientific domains.
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Submitted 9 July, 2024; v1 submitted 30 November, 2023;
originally announced December 2023.
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Plunging in the Dirac sea using graphene quantum dots
Authors:
F. Fillion-Gourdeau,
P. Levesque,
S. MacLean
Abstract:
The dynamics of low energy charge carriers in a graphene quantum dot subjected to a time-dependent local field is investigated numerically. In particular, we study a configuration where a Coulomb electric field is provided by an ion traversing the graphene sample. A Galerkin-like numerical scheme is introduced to solve the massless Dirac equation describing charge carriers subjected to space- and…
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The dynamics of low energy charge carriers in a graphene quantum dot subjected to a time-dependent local field is investigated numerically. In particular, we study a configuration where a Coulomb electric field is provided by an ion traversing the graphene sample. A Galerkin-like numerical scheme is introduced to solve the massless Dirac equation describing charge carriers subjected to space- and time-dependent electromagnetic potentials and is used to evaluate the field induced interband transitions. It is demonstrated that as the ion goes through graphene, electron-hole pairs are generated dynamically via the adiabatic pair creation mechanism around avoided crossings, similar to electron-positron pair generation in low energy heavy ion collisions.
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Submitted 16 September, 2020;
originally announced September 2020.
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Large magnetoresistance by Pauli blockade in hydrogenated graphene
Authors:
J. Guillemette,
N. Hemsworth,
A. Vlasov,
J. Kirman,
F. Mahvash,
P. L. Lévesque,
M. Siaj,
R. Martel,
G. Gervais,
S. Studenikin,
A. Sachrajda,
T. Szkopek
Abstract:
We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute th…
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We report the observation of a giant positive magnetoresistance in millimetre scale hydrogenated graphene with magnetic field oriented in the plane of the graphene sheet. A positive magnetoresistance in excess of 200\% at a temperature of 300 mK was observed in this configuration, reverting to negative magnetoresistance with the magnetic field oriented normal to the graphene plane. We attribute the observed positive, in-plane, magnetoresistance to Pauli-blockade of hopping conduction induced by spin polarization. Our work shows that spin polarization in concert with electron-electron interaction can play a dominant role in magnetotransport within an atomic monolayer.
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Submitted 22 February, 2018;
originally announced February 2018.
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Measurement of Topological Berry Phase in Highly Disordered Graphene
Authors:
K. Bennaceur,
J. Guillemette,
P. L. Lévesque,
N. Cottenye,
F. Mahvash,
N. Hemsworth,
A. Kumar,
Y. Murata,
S. Heun,
M. O. Goerbig,
C. Proust,
M. Siaj,
R. Martel,
G. Gervais,
T. Szkopek
Abstract:
We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against…
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We have observed the quantum Hall effect (QHE) and Shubnikov-de Haas (SdH) oscillations in highly disordered graphene at magnetic fields up to 65 T. Disorder was introduced by hydrogenation of graphene up to a ratio H/C $\approx 0.1\%$. The analysis of SdH oscillations and QHE indicates that the topological part of the Berry phase, proportional to the pseudo-spin winding number, is robust against introduction of disorder by hydrogenation in large scale graphene.
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Submitted 12 October, 2015;
originally announced October 2015.
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High field response of gated graphene at THz frequencies
Authors:
Hadi Razavipour,
Hassan A. Hafez,
Ibraheem Al-Naib,
Wayne Yang,
Pierre Lévesque,
Abdeladim Guermoune,
Francois Blanchard,
Xin Chai,
Denis Ferachou,
Richard Martel,
Michael Hilke,
Marc M. Dignam,
Tsuneyuki Ozaki,
David G. Cooke
Abstract:
We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is i…
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We study the Fermi energy level dependence of nonlinear terahertz (THz) transmission of gated multi-layer and single-layer graphene transferred onto sapphire and quartz substrates. The two samples represent two limits of low-field impurity scattering: short-range neutral and long-range charged impurity scattering, respectively. We observe an increase in the transmission as the field amplitude is increased due to intraband absorption bleaching starting at fields above 8 kV/cm. This effect arises from a field-induced reduction in THz conductivity that depends strongly on the Fermi energy. We account for intraband absorption using a free carrier Drude model that includes neutral and charged impurity scattering as well as optical phonon scattering. We find that although the Fermi-level dependence in the monolayer and five-layer samples is quite different, both exhibit a strong dependence on the field amplitude that cannot be explained on the basis of an increase in the lattice temperature alone. Our results provide a deeper understanding of transport in graphene devices operating at THz frequencies and in modest kV/cm field strengths where nonlinearities exist.
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Submitted 3 August, 2015;
originally announced August 2015.
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Exfoliating pristine black phosphorus down to the monolayer: photo-oxidation and electronic confinement effects
Authors:
A. Favron,
E. Gaufrès,
F. Fossard,
P. L. Lévesque,
A-L. Phaneuf-L'Heureux,
N. Y-W. Tang,
A. Loiseau,
R. Leonelli,
S. Francoeur,
R. Martel
Abstract:
Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Proper…
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Thin layers of black phosphorus have recently raised interest for their two-dimensional (2D) semiconducting properties, such as tunable direct bandgap and high carrier mobilities. This lamellar crystal of P atoms stacked together by weak van der Waals forces can be exfoliated down to the stratophosphane monolayer (also called phosphorene) using procedures similar to those used for graphene. Properties of this 2D material are however challenging to probe due to a fast and ubiquitous degradation upon exposure to ambient conditions. Herein, we investigate the crystal degradation using in-situ Raman and transmission electron spectroscopies and highlight a process involving a photo-induced oxidation reaction with adsorbed oxygen in water. The experimental conditions to prepare and preserve mono-, bi- and multilayers of stratophosphane in their pristine states were determined. Study on these 2D layers provides new insights on the effect of confinement on the chemical reactivity and the vibrational modes of black phosphorus.
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Submitted 21 August, 2014; v1 submitted 2 August, 2014;
originally announced August 2014.
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Quantum Hall Effect in Hydrogenated Graphene
Authors:
J. Guillemette,
S. S. Sabri,
B. Wu,
K. Bennaceur,
P. E. Gaskell,
M. Savard,
P. L. Lévesque,
F. Mahvash,
A. Guermoune,
M. Siaj,
R. Martel,
T. Szkopek,
G. Gervais
Abstract:
The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a…
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The quantum Hall effect is observed in a two-dimensional electron gas formed in millimeter-scale hydrogenated graphene, with a mobility less than 10 $\mathrm{cm^{2}/V\cdot s}$ and corresponding Ioffe-Regel disorder parameter $(k_{F}λ)^{-1}\gg1$. In zero magnetic field and low temperatures, the hydrogenated graphene is insulating with a two-point resistance of order of $250 h/e^2$. Application of a strong magnetic field generates a negative colossal magnetoresistance, with the two-point resistance saturating within 0.5% of $h/2e^{2}$ at 45T. Our observations are consistent with the opening of an impurity-induced gap in the density of states of graphene. The interplay between electron localization by defect scattering and magnetic confinement in two-dimensional atomic crystals is discussed.
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Submitted 7 January, 2013;
originally announced January 2013.
