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Exchange-driven giant magnetoelastic coupling in Sr$_4$Ru$_3$O$_{10}$
Authors:
Carolina A. Marques,
Luke C. Rhodes,
Weronika Osmolska,
Harry Lane,
Izidor Benedičič,
Masahiro Naritsuka,
Rosalba Fittipaldi,
Mariateresa Lettieri,
Antonio Vecchione,
Peter Wahl
Abstract:
The interplay of electronic and structural degrees of freedom is at the heart of some of the most astonishing phenomena found in condensed matter physics, for example, the condensation of electron pairs into a macroscopically coherent ground state in superconductors. In magnetic materials, magnetic interactions couple to lattice degrees of freedom resulting in magnetoelastic coupling - an effect t…
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The interplay of electronic and structural degrees of freedom is at the heart of some of the most astonishing phenomena found in condensed matter physics, for example, the condensation of electron pairs into a macroscopically coherent ground state in superconductors. In magnetic materials, magnetic interactions couple to lattice degrees of freedom resulting in magnetoelastic coupling - an effect that is typically small and only detectable on macroscopic samples. Here, we demonstrate giant magnetoelastic coupling in the correlated itinerant ferromagnet Sr$_4$Ru$_3$O$_{10}$. We establish control of the magnetism in the surface layer and use this control to probe the impact of the magnetism on its electronic and structural properties. By using scanning tunneling microscopy (STM), we reveal subtle changes in the electronic structure dependent on ferromagnetic or antiferromagnetic alignment between the surface and subsurface layers. We determine the consequences of the exchange force on the relaxation of the surface layer, exhibiting a giant magnetostriction. Our results provide a direct measurement of the impact of exchange interactions and correlations on structural details in a quantum material, reveal how electronic correlations result in strong electron-lattice coupling and establish Sr$_4$Ru$_3$O$_{10}$ as a system to study magnetism in 2D.
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Submitted 14 May, 2025;
originally announced May 2025.
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Evidence of electronic states driving current-induced insulator-to-metal transition
Authors:
V. K. Bhartiya,
R. Hartmann,
F. Forte,
F. Gabriele,
T. Kim,
G. Cuono,
C. Autieri,
S. Fan,
K. Kisslinger,
F. Camino,
M. Lettieri,
R. Fittipaldi,
C. Mazzoli,
D. N. Basov,
J. Pelliciari,
A. Di Bernardo,
A. Vecchione,
M. Cuoco,
V. Bisogni
Abstract:
On demand current-driven insulator-to-metal transition (IMT) is pivotal for the next generation of energy-efficient and scalable microelectronics. IMT is a key phenomenon observed in various quantum materials, and it is enabled by the complex interplay of spin, lattice, charge, and orbital degrees of freedom (DOF). Despite significant prior work, the underlying mechanism of the current-driven IMT…
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On demand current-driven insulator-to-metal transition (IMT) is pivotal for the next generation of energy-efficient and scalable microelectronics. IMT is a key phenomenon observed in various quantum materials, and it is enabled by the complex interplay of spin, lattice, charge, and orbital degrees of freedom (DOF). Despite significant prior work, the underlying mechanism of the current-driven IMT remains elusive, primarily due to the difficulty in simultaneously obtaining bulk fingerprints of all the electronic DOF. Here, we employ in-operando resonant inelastic x-ray scattering (RIXS) on Ca$_2$RuO$_4$, a prototypical strongly correlated material, to track the evolution of the electronic DOF encoded in the RIXS spectra during the current-driven IMT. Upon entering the conductive state, we observe an energy-selective suppression of the RIXS intensity, proportional to the current. Using complementary RIXS cross-section calculations, we demonstrate that the non-equilibrium conductive state emerges from the formation of correlated electronic states with a persistent Mott gap.
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Submitted 24 April, 2025;
originally announced April 2025.
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Pattern Formation by Electric-field Quench in Mott Crystal
Authors:
Nicolas Gauquelin,
Filomena Forte,
Daen Jannis,
Rosalba Fittipaldi,
Carmine Autieri,
Giuseppe Cuono,
Veronica Granata,
Mariateresa Lettieri,
Canio Noce,
Fabio Miletto Granozio,
Antonio Vecchione,
Johan Verbeeck,
Mario Cuoco
Abstract:
The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the ins…
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The control of Mott phase is intertwined with the spatial reorganization of the electronic states. Out-of-equilibrium driving forces typically lead to electronic patterns that are absent at equilibrium, whose nature is however often elusive. Here, we unveil a nanoscale pattern formation in the Ca$_2$RuO$_4$ Mott insulator. We demonstrate how an applied electric field spatially reconstructs the insulating phase that, uniquely after switching off the electric field, exhibits nanoscale stripe domains. The stripe pattern has regions with inequivalent octahedral distortions that we directly observe through high-resolution scanning transmission electron microscopy. The nanotexture depends on the orientation of the electric field, it is non-volatile and rewritable. We theoretically simulate the charge and orbital reconstruction induced by a quench dynamics of the applied electric field providing clear-cut mechanisms for the stripe phase formation. Our results open the path for the design of non-volatile electronics based on voltage-controlled nanometric phases.
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Submitted 31 May, 2023;
originally announced May 2023.
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Spin-orbit coupling induced Van Hove singularity in proximity to a Lifshitz transition in Sr$_4$Ru$_3$O$_{10}$
Authors:
Carolina A. Marques,
Philip A. E. Murgatroyd,
Rosalba Fittipaldi,
Weronika Osmolska,
Brendan Edwards,
Izidor Benedičič,
Gesa-R. Siemann,
Luke C. Rhodes,
Sebastian Buchberger,
Masahiro Naritsuka,
Edgar Abarca-Morales,
Daniel Halliday,
Craig Polley,
Mats Leandersson,
Masafumi Horio,
Johan Chang,
Raja Arumugam,
Mariateresa Lettieri,
Veronica Granata,
Antonio Vecchione,
Phil D. C. King,
Peter Wahl
Abstract:
Van Hove singularities (VHss) in the vicinity of the Fermi energy often play a dramatic role in the physics of strongly correlated electron materials. The divergence of the density of states generated by VHss can trigger the emergence of new phases such as superconductivity, ferromagnetism, metamagnetism, and density wave orders. A detailed understanding of the electronic structure of these VHss i…
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Van Hove singularities (VHss) in the vicinity of the Fermi energy often play a dramatic role in the physics of strongly correlated electron materials. The divergence of the density of states generated by VHss can trigger the emergence of new phases such as superconductivity, ferromagnetism, metamagnetism, and density wave orders. A detailed understanding of the electronic structure of these VHss is therefore essential for an accurate description of such instabilities. Here, we study the low-energy electronic structure of the trilayer strontium ruthenate Sr$_4$Ru$_3$O$_{10}$, identifying a rich hierarchy of VHss using angle-resolved photoemission spectroscopy and millikelvin scanning tunneling microscopy. Comparison of $k$-resolved electron spectroscopy and quasiparticle interference allows us to determine the structure of the VHss and demonstrate the crucial role of spin-orbit coupling in shaping them. We use this to develop a minimal model from which we identify a new mechanism for driving a field-induced Lifshitz transition in ferromagnetic metals.
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Submitted 9 April, 2024; v1 submitted 9 March, 2023;
originally announced March 2023.