Showing 1–29 of 29 results for author: Lefloch, F

Gatemon qubit on a germanium quantum-well heterostructure

Authors: Elyjah Kiyooka, Chotivut Tangchingchai, Leo Noirot, Axel Leblanc, Boris Brun, Simon Zihlmann, Romain Maurand, Vivien Schmitt, Étienne Dumur, Jean-Michel Hartmann, Francois Lefloch, Silvano De Franceschi

Abstract: Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable supe… ▽ More Gatemons are superconducting qubits resembling transmons, with a gate-tunable semiconducting weak link as the Josephson element. Here, we report a gatemon device featuring an aluminum microwave circuit on a Ge/SiGe heterostructure embedding a Ge quantum well. Owing to the superconducting proximity effect, the high-mobility two-dimensional hole gas confined in this well provides a gate-tunable superconducting weak link between two Al contacts. We perform Rabi oscillation and Ramsey interference measurements, demonstrate the gate-voltage dependence of the qubit frequency, and measure the qubit anharmonicity. We find relaxation times T$_{1}$ up to 119 ns, and Ramsey coherence times T$^{*}_{2}$ up to 70 ns, and a qubit frequency gate-tunable over 3.5 GHz. The reported proof-of-concept reproduces the results of a very recent work [Sagi et al., Nat. Commun. 15, 6400 (2024)] using similar Ge/SiGe heterostructures thereby validating a novel platform for the development of gatemons and parity-protected cos(2$φ$) qubits. △ Less

Submitted 19 December, 2024; v1 submitted 4 November, 2024; originally announced November 2024.

Nanosecond Laser Annealing: impact on superconducting Silicon on Insulator epilayers

Authors: Y. Baron, J. L. Lábár, S. Lequien, B. Pécz, R. Daubriac, S. Kerdilés, P. Acosta ALba, C. Marcenat, D. Débarre, F. Lefloch, F. Chiodi

Abstract: We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped supe… ▽ More We present superconducting monocrystalline Silicon On Insulator thin 33 nm epilayers. They are obtained by nanosecond laser annealing under ultra-high vacuum on 300 mm wafers heavily pre-implantated with boron ($2.5\times \,10^{16}\, at/cm^2$, 3 keV). Superconductivity is discussed in relation to the structural, electrical and material properties, a step towards the integration of ultra-doped superconducting Si at large scale. In particular, we highlight the effect of the nanosecond laser annealing energy and the impact of multiple laser anneals. Increasing the energy leads to a linear increase of the layer thickness, and to the increase of the superconducting critical temperature $T_c$ from zero ($<35\, mK$) to $0.5\,K$. This value is comparable to superconducting Si layers realised by Gas Immersion Laser Doping where the dopants are incorporated without introducing the deep defects associated to implantation. Superconductivity only appears when the annealed depth is larger than the initial amorphous layer induced by the boron implantation. The number of subsequent anneals results in a more homogeneous doping with reduced amount of structural defects and increased conductivity. The quantitative analysis of $T_c$ concludes on a superconducting/ non superconducting bilayer, with an extremely low resistance interface. This highlights the possibility to couple efficiently superconducting Si to Si channels. △ Less

Submitted 25 June, 2024; originally announced June 2024.

Gate- and flux-tunable sin(2$\varphi$) Josephson element with proximitized Ge-based junctions

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frederic Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Etienne Dumur, Silvano De Franceschi, Francois Lefloch

Abstract: Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson… ▽ More Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly $π$-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the $\sin(2\varphi)$ component accounts for more than \SI{95}{\percent} of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties. △ Less

Submitted 17 June, 2024; v1 submitted 23 May, 2024; originally announced May 2024.

From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Gonzalo Troncoso Fernandez-Bada, Boris Brun-Barriere, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

Abstract: Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an exp… ▽ More Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding Josephson field-effect transistors fabricated from a SiGe/Ge/SiGe heterostructure grown on a 200-mm silicon wafer. The single-junction CPR shows up to three harmonics with gate tunable amplitude. In the presence of microwave irradiation, the ratio of the first two dominant harmonics, corresponding to single and double Cooper-pair transport processes, is consistently reflected in relative weight of integer and half-integer Shapiro steps. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27% asymmetry to a $π$-periodic Josephson regime suitable for the implementation of parity-protected superconducting qubits. These results illustrate the potential of Ge-based hybrid devices as versatile and scalable building blocks of novel superconducting quantum circuits. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 8 pages, 5 figures

A gate-tunable graphene Josephson parametric amplifier

Authors: Guilliam Butseraen, Arpit Ranadive, Nicolas Aparicio, Kazi Rafsanjani Amin, Abhishek Juyal, Martina Esposito, Kenji Watanabe, Takashi Taniguchi, Nicolas Roch, François Lefloch, Julien Renard

Abstract: With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to dramatic advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers have proven to be essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of $μ$eV ). They are also used to generate non classical states of light… ▽ More With a large portfolio of elemental quantum components, superconducting quantum circuits have contributed to dramatic advances in microwave quantum optics. Of these elements, quantum-limited parametric amplifiers have proven to be essential for low noise readout of quantum systems whose energy range is intrinsically low (tens of $μ$eV ). They are also used to generate non classical states of light that can be a resource for quantum enhanced detection. Superconducting parametric amplifiers, like quantum bits, typically utilize a Josephson junction as a source of magnetically tunable and dissipation-free nonlinearity. In recent years, efforts have been made to introduce semiconductor weak links as electrically tunable nonlinear elements, with demonstrations of microwave resonators and quantum bits using semiconductor nanowires, a two dimensional electron gas, carbon nanotubes and graphene. However, given the challenge of balancing nonlinearity, dissipation, participation, and energy scale, parametric amplifiers have not yet been implemented with a semiconductor weak link. Here we demonstrate a parametric amplifier leveraging a graphene Josephson junction and show that its working frequency is widely tunable with a gate voltage. We report gain exceeding 20 dB and noise performance close to the standard quantum limit. Our results complete the toolset for electrically tunable superconducting quantum circuits and offer new opportunities for the development of quantum technologies such as quantum computing, quantum sensing and fundamental science. △ Less

Submitted 5 April, 2022; originally announced April 2022.

Journal ref: Nature Nanotechnology (2022)

Superconducting V$_3$Si for quantum circuit applications

Authors: Tom Doekle Vethaak, Frederic Gustavo, Thierry Farjot, Tomas Kubart, Patrice Gergaud, Shi-Li Zhang, François Lefloch, Fabrice Nemouchi

Abstract: V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the prospect of further integration in silicon technology for quantum circuits. Two challenges have been identified: (i) the large difference in thermal expansion ra… ▽ More V$_3$Si thin films are known to be superconducting with transition temperatures up to 15 K, depending on the annealing temperature and the properties of the substrate underneath. Here we investigate the film structural properties with the prospect of further integration in silicon technology for quantum circuits. Two challenges have been identified: (i) the large difference in thermal expansion rate between V$_3$Si and the Si substrate leads to large thermal strains after thermal processing, and (ii) the undesired silicide phase VSi$_2$ forms when V$_3$Si is deposited on silicon. The first of these is studied by depositing layers of 200 nm V$_3$Si on wafers of sapphire and oxidized silicon, neither of which react with the silicide. These samples are then heated and cooled between room temperature and 860°C, during which in-situ XRD measurements are performed. Analysis reveals a highly non-linear stress development during heating with contributions from crystallization and subsequent grain growth, as well as the thermal expansion mismatch between silicide and substrate, while the film behaves thermoelastically during cooling. The second challenge is explored by depositing films of 20, 50, 100 and 200 nm of V$_3$Si on bulk silicon. For each thickness, six samples are prepared, which are then annealed at temperatures between 500 and 750°C, followed by measurements of their resistivity, residual resistance ratio and superconducting critical temperature. A process window is identified for silicide thicknesses of at least 100 nm, within which a trade-off needs to be made between the quality of the V$_3$Si film and its consumption by the formation of VSi$_2$. △ Less

Submitted 1 April, 2021; originally announced April 2021.

Comments: 7 pages, 7 figures

Influence of substrate-induced thermal stress on the superconducting properties of V3Si thin films

Authors: Tom Doekle Vethaak, Frederic Gustavo, Thierry Farjot, Tomas Kubart, Patrice Gergaud, Shi-Li Zhang, Fabrice Nemouchi, François Lefloch

Abstract: Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The superconducting properties of the films thus produced are found to improve with annealing temperature, which is ascribed to a reduction of defects in the polyc… ▽ More Thin films of superconducting V$_3$Si were prepared by means of RF sputtering from a compound V$_3$Si target at room temperature onto sapphire and oxide-coated silicon wafers, followed by rapid thermal processing under secondary vacuum. The superconducting properties of the films thus produced are found to improve with annealing temperature, which is ascribed to a reduction of defects in the polycrystalline layer. Critical temperatures ($T_\text{c}$) up to $15.3\,$K were demonstrated after thermal processing, compared to less than $1\,$K after deposition. The $T_\text{c}$ was found to always be lower on the silicon wafers, by on average $1.9(3)\,$K for the annealed samples. This difference, as well as a broadening of the superconducting transitions, is nearly independent of the annealing conditions. In-situ XRD measurements reveal that the silicide layer becomes strained upon heating due to a mismatch between the thermal expansion of the substrate and that of V$_3$Si. Taking into account the volume reduction due to crystallization, this mismatch is initially larger on sapphire, though stress relaxation allows the silicide layer to be in a relatively unstrained state after cooling. On oxidized silicon however, no clear evidence of relaxation upon cooling is observed, and the V$_3$Si ends up with an out-of-plane strain of 0.3\% at room temperature. This strain increases as the sample is cooled down to cryogenic temperatures, though the deformation of the polycrystalline layer is expected to be highly inhomogeneous. Taking into account also the reported occurrence of a Martensitic transition just above the critical temperature, this extrapolated strain distribution is found to closely match an existing model of the strain dependence of A-15 superconducting compounds. △ Less

Submitted 14 October, 2020; originally announced October 2020.

Comments: 7 pages, 5 figures

Germanium quantum well Josephson field effect transistors and interferometers

Authors: Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz, XuHai Huang, Susheng Tan, Romain Maurand, Sergey Frolov, Amir Sammak, Giordano Scappucci, François Lefloch, Silvano De Franceschi

Abstract: Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe… ▽ More Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel. △ Less

Submitted 23 October, 2018; v1 submitted 11 October, 2018; originally announced October 2018.

Epitaxial electrical contact to graphene on SiC

Authors: T. Le Quang, L. Huder, F. Lipp Bregolin, A. Artaud, H. Okuno, S. Pouget, N. Mollard, G. Lapertot, A. G. M Jansen, F. Lefloch, E. F. C Driessen, C. Chapelier, V. T. Renard

Abstract: Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a… ▽ More Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in high vacuum. We exploit the combined effect of edge-contact and partially-covalent surface epitaxy between graphene and the metallic carbide to fabricate devices in which low contact-resistance and Josephson effect are observed. Implementing this approach could significantly simplify the realization of large-scale graphene circuits. △ Less

Submitted 11 July, 2017; v1 submitted 17 May, 2017; originally announced May 2017.

Comments: supplementary information available at the publisher's site

Journal ref: Carbon 121, 48 (2017)

All silicon Josephson junctions

Authors: F. Chiodi, J. -E. Duvauchelle, C. Marcenat, D. Débarre, F. Lefloch

Abstract: We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitt… ▽ More We have realised laser-doped all-silicon superconducting (S)/ normal metal (N) bilayers of tunable thickness and dopant concentration. We observed a strong reduction of the bilayers critical temperature when increasing the normal metal thickness, a signature of the highly transparent S/N interface associated to the epitaxial sharp laser doping profile. We extracted the interface resistance by fitting with the linearised Usadel equations, demonstrating a reduction of one order of magnitude from previous superconductor/doped Si interfaces. In this well controlled crystalline system we exploited the low resistance S/N interfaces to elaborate all-silicon lateral SNS Josephson junctions with long range proximity effect. Their dc transport properties, such as the critical and retrapping currents, could be well understood in the diffusive regime. Furthermore, this work lead to the estimation of important parameters in ultra-doped superconducting Si, such as the Fermi velocity, the coherence length, or the electron-phonon coupling constant, fundamental to conceive an all-silicon superconducting electronics. △ Less

Submitted 26 October, 2016; originally announced October 2016.

Comments: 6 pages, 7 figures

Journal ref: Phys. Rev. B 96, 024503 (2017)

Silicon Superconducting Quantum Interference Device

Authors: Jean-Eudes Duvauchelle, Anaïs Francheteau, Christophe Marcenat, Francesca Chiodi, Dominique Débarre, Klaus Hasselbach, John R. Kirtley, François Lefloch

Abstract: We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperat… ▽ More We have studied a Superconducting Quantum Interference SQUID device made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the Gas Immersion Laser Doping (GILD) technique. The SQUID device is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations. △ Less

Submitted 17 August, 2015; originally announced August 2015.

Comments: Published in Applied Physics Letters (August 2015)

Journal ref: Appl. Phys. Lett. 107, 072601 (2015)

D.C. Josephson transport by quartets and other Andreev resonances in superconducting bijunctions

Authors: R. Mélin, D. Feinberg, H. Courtois, C. Padurariu, A. Pfeffer, J. E. Duvauchelle, F. Lefloch, T. Jonckheere, J. Rech, T. Martin, B. Douçot

Abstract: Bijunctions are three-terminal Josephson junctions where three superconductors are connected by a single weak link made of a metallic region or of quantum dots. Biasing two of the superconductors with commensurate voltages yields Andreev resonances that produce d.c. Josephson currents made of correlated Cooper pairs. For instance with applied voltages (0, V,-V), quartets formed by two entangled Co… ▽ More Bijunctions are three-terminal Josephson junctions where three superconductors are connected by a single weak link made of a metallic region or of quantum dots. Biasing two of the superconductors with commensurate voltages yields Andreev resonances that produce d.c. Josephson currents made of correlated Cooper pairs. For instance with applied voltages (0, V,-V), quartets formed by two entangled Cooper pairs are emitted by one reservoir towards the two others. Theory involving non-equilibrium Green's functions reveal the microsopic mechanism at play, e.g. multiple coherent Andreev reflections that provide an energy-conserving and fully coherent channel. Recent experiments on diffusive Aluminum-Copper bijunctions show transport anomalies that are interpreted in terms of quartet resonances. △ Less

Submitted 8 September, 2014; originally announced September 2014.

Comments: 7 pages, 8 figures, Proceedings of the Low Temperature Physics Conference LT27, Buenos Aires 2014

Electric field-controlled rippling of graphene

Authors: Zoltán Osváth, François Lefloch, Vincent Bouchiat, Claude Chapelier

Abstract: Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized in domains whose topographic roughne… ▽ More Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of graphene is much less studied. Here we show that graphene near a metallic interface can exhibit a set of ripples self-organized in domains whose topographic roughness is controlled by the tip bias of a scanning tunneling microscope. The reconstruction from topographic images of graphene bending energy maps sheds light on the local electro-mechanical response of graphene under STM imaging and unveils the role of the stress induced by the vicinity of graphene/metal interface in the formation and the manipulation of these ripples. Since microscopic rippling is one of the important factors that limit charge carrier mobility in graphene, the control of rippling with a gate voltage may have important consequences in the conductance of graphene devices where transverse electric fields are created by contactless suspended gate electrodes. This opens also the possibility to dynamically control the local morphology of graphene nanomembranes. △ Less

Submitted 20 February, 2014; originally announced February 2014.

Journal ref: Nanoscale, 2013, 5, 10996-11002

Sub-Gap Structure in the Conductance of a Three-Terminal Josephson Junction

Authors: Andreas H. Pfeffer, Jean Eudes Duvauchelle, Hervé Courtois, Régis Mélin, Denis Feinberg, François Lefloch

Abstract: Three-terminal superconductor (S) - normal metal (N) - superconductor (S) Josephson junctions are investigated. In a geometry where a T-shape normal metal is connected to three superconducting reservoirs, new sub-gap structures appear in the differential resistance for specific combinations of the superconductor chemical potentials. Those correspond to a correlated motion of Cooper pairs within th… ▽ More Three-terminal superconductor (S) - normal metal (N) - superconductor (S) Josephson junctions are investigated. In a geometry where a T-shape normal metal is connected to three superconducting reservoirs, new sub-gap structures appear in the differential resistance for specific combinations of the superconductor chemical potentials. Those correspond to a correlated motion of Cooper pairs within the device that persist well above the Thouless energy and is consistent with the prediction of quartets formed by two entangled Cooper pairs. A simplified nonequilibrium Keldysh Green's function calculation is presented that supports this interpretation. △ Less

Submitted 6 July, 2014; v1 submitted 18 July, 2013; originally announced July 2013.

Comments: To appear in Physical Review B

Journal ref: Physical Review B 90, 075401 (2014)

SQUIDs based set-up for probing current noise and correlations in three-terminal devices

Authors: A. H. Pfeffer, B. Kaviraj, O. Coupiac, F. Lefloch

Abstract: We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three SQUIDs as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit. From these traces,… ▽ More We have implemented a new experimental set-up for precise measurements of current fluctuations in three-terminal devices. The system operates at very low temperatures (30 mK) and is equipped with three SQUIDs as low noise current amplifiers. A SQUID input coil is connected to each terminal of a sample allowing the acquisition of time-dependent current everywhere in the circuit. From these traces, we can measure the current mean value, the noise and cross-correlations between different branches of a device. In this paper we present calibration results of noise and cross-correlations obtained using low impedance macroscopic resistors. From these results we can extract the noise level of the set-up and show that there are no intrinsic correlations due to the measurement scheme. We also studied noise and correlations as a function of a DC current and estimated the electronic temperature of various macroscopic resistors. △ Less

Submitted 25 October, 2012; originally announced October 2012.

Comments: Accepted for publication in Review of Scientific Instruments

Noise Correlations in Three-Terminal Diffusive Superconductor-Normal Metal-Superconductor Nanostructures

Authors: B. Kaviraj, O. Coupiac, H. Courtois, F. Lefloch

Abstract: We present measurements of current noise and cross-correlations in three-terminal Superconductor-Normal metal-Superconductor (S-N-S) nanostructures that are potential solid-state entanglers thanks to Andreev reflections at the N-S interfaces. The noise correlation measurements spanned from the regime where electron-electron interactions are relevant to the regime of Incoherent Multiple Andreev Ref… ▽ More We present measurements of current noise and cross-correlations in three-terminal Superconductor-Normal metal-Superconductor (S-N-S) nanostructures that are potential solid-state entanglers thanks to Andreev reflections at the N-S interfaces. The noise correlation measurements spanned from the regime where electron-electron interactions are relevant to the regime of Incoherent Multiple Andreev Reflection (IMAR). In the latter regime, negative cross-correlations are observed in samples with closely-spaced junctions. △ Less

Submitted 18 August, 2011; v1 submitted 21 April, 2011; originally announced April 2011.

Comments: Include Supplemental Material

Journal ref: PRL 107 (2011) 077005

Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon

Authors: G. Katsaros, P. Spathis, M. Stoffel, F. Fournel, M. Mongillo, V. Bouchiat, F. Lefloch, A. Rastelli, O. G. Schmidt, S. De Franceschi

Abstract: The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made b… ▽ More The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence. △ Less

Submitted 11 May, 2010; originally announced May 2010.

Comments: 35 pages, 6 figures

Divergence at low bias and down-mixing of the current noise in a diffusive superconductor-normal metal-superconductor junction

Authors: Elsa Lhotel, Olivier Coupiac, François Lefloch, Hervé Courtois, Marc Sanquer

Abstract: We present current noise measurements in a long diffusive superconductor-normal-metal-superconductor junction in the low voltage regime, in which transport can be partially described in terms of coherent multiple Andreev reflections. We show that, when decreasing voltage, the current noise exhibits a strong divergence together with a broad peak. We ascribe this peak to the mixing between the ac-… ▽ More We present current noise measurements in a long diffusive superconductor-normal-metal-superconductor junction in the low voltage regime, in which transport can be partially described in terms of coherent multiple Andreev reflections. We show that, when decreasing voltage, the current noise exhibits a strong divergence together with a broad peak. We ascribe this peak to the mixing between the ac- Josephson current and the noise of the junction itself. We show that the junction noise corresponds to the thermal noise of a nonlinear resistor 4kBT=R with R V = I V and no adjustable parameters. △ Less

Submitted 26 October, 2007; v1 submitted 27 April, 2007; originally announced April 2007.

Ballistic effects in a proximity induced superconducting diffusive metal

Authors: W. Escoffier, C. Chapelier, F. Lefloch

Abstract: Using a Scanning Tunneling Microscope (STM), we investigate the Local Density of States (LDOS) of artificially fabricated normal metal nano-structures in contact with a superconductor. Very low temperature local spectroscopic measurements (100 mK) reveal the presence of well defined subgap peaks at energy |E|<Delta in the LDOS at various positions of the STM tip. Although no clear correlations b… ▽ More Using a Scanning Tunneling Microscope (STM), we investigate the Local Density of States (LDOS) of artificially fabricated normal metal nano-structures in contact with a superconductor. Very low temperature local spectroscopic measurements (100 mK) reveal the presence of well defined subgap peaks at energy |E|<Delta in the LDOS at various positions of the STM tip. Although no clear correlations between the LDOS and the shape of the samples have emerged, some of the peak features suggest they originate from quasi-particle bound states within the normal metal structures (De Gennes St James states). Refocusing of electronic trajectories induced by the granular srtucture of the samples can explain the observation of spatially uncorrelated interference effects in a non-ballistic medium. △ Less

Submitted 27 September, 2005; originally announced September 2005.

Comments: 4 pages, 4 figures

Scanning Tunneling Spectroscopy of the superconducting proximity effect in a diluted ferromagnetic alloy

Authors: L. Cretinon, A. K. Gupta, H. Sellier, F. Lefloch, M. Faure, A. Buzdin, H. Courtois

Abstract: We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows t… ▽ More We studied the proximity effect between a superconductor (Nb) and a diluted ferromagnetic alloy (CuNi) in a bilayer geometry. We measured the local density of states on top of the ferromagnetic layer, which thickness varies on each sample, with a very low temperature Scanning Tunneling Microscope. The measured spectra display a very high homogeneity. The analysis of the experimental data shows the need to take into account an additional scattering mechanism. By including in the Usadel equations the effect of the spin relaxation in the ferromagnetic alloy, we obtain a good description of the experimental data. △ Less

Submitted 13 September, 2005; v1 submitted 2 February, 2005; originally announced February 2005.

Comments: 7 pages, 6 figures

Journal ref: Phys. Rev. B 72, 024511 (2005)

Mesoscopic transition in the shot noise of diffusive S/N/S junctions

Authors: C. Hoffmann, F. Lefloch, M. Sanquer, B. Pannetier

Abstract: We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflectio… ▽ More We experimentally investigated the current noise in diffusive Superconductor/Normal metal/Superconductor junctions with lengths between the superconducting coherence length xi_Delta and the phase coherence length L_Phi of the normal metal (xi_Delta < L < L_Phi). We measured the shot noise over a large range of energy covering both the regimes of coherent and incoherent multiple Andreev reflections. The transition between these two regimes occurs at the Thouless energy where a pronounced minimum in the current noise density is observed. Above the Thouless energy, in the regime of incoherent multiple Andreev reflections, the noise is strongly enhanced compared to a normal junction and grows linearly with the bias voltage. Semi-classical theory describes the experimental results accurately, when taking into account the voltage dependence of the resistance which reflects the proximity effect. Below the Thouless energy, the shot noise diverges with decreasing voltage which may indicate the coherent transfer of multiple charges. △ Less

Submitted 28 September, 2004; originally announced September 2004.

Comments: 5 pages, 5 figures, accepted for publication in Phys. Rev. B, Rapid Communication

Journal ref: Phys. Rev. B 70, 180503(R) (2004)

Half-integer Shapiro steps at the 0-pi crossover of a ferromagnetic Josephson junction

Authors: H. Sellier, C. Baraduc, F. Lefloch, R. Calemczuk

Abstract: We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a non-zero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation a… ▽ More We investigate the current-phase relation of S/F/S junctions near the crossover between the 0 and the pi ground states. We use Nb/CuNi/Nb junctions where this crossover is driven both by thickness and temperature. For a certain thickness a non-zero minimum of critical current is observed at the crossover temperature. We analyze this residual supercurrent by applying a high frequency excitation and observe the formation of half-integer Shapiro steps. We attribute these fractional steps to a doubling of the Josephson frequency due to a sin(2*phi) current-phase relation. This phase dependence is explained by the splitting of the energy levels in the ferromagnetic exchange field. △ Less

Submitted 10 June, 2004; originally announced June 2004.

Comments: 4 pages, 5 figures, accepted for publication in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 92, 257005 (2004)

Inelastic relaxation and noise temperature in S/N/S junctions

Authors: C. Hoffmann, F. Lefloch, M. Sanquer

Abstract: We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enh… ▽ More We studied electronic relaxation in long diffusive superconductor / normal metal / superconductor (S/N/S) junctions by means of current noise and transport measurements down to very low temperature (100mK). Samples with normal metal lengths of 4, 10 and 60 micrometer have been investigated. In all samples the shot noise increases very rapidly with the voltage. This is interpreted in terms of enhanced heating of the electron gas confined between the two S/N interfaces. Experimental results are analyzed quantitatively taking into account electron-phonon interaction and heat transfer through the S/N interfaces. Transport measurements reveal that in all samples the two S/N interfaces are connected incoherently, as shown by the reentrance of the resistance at low temperature. The complementarity of noise and transport measurements allows us to show that the energy dependence of the reentrance at low voltage is essentially due to the increasing effective temperature of the quasiparticles in the normal metal. △ Less

Submitted 13 September, 2002; originally announced September 2002.

Comments: 5 pages, 4 figures, to be published in EPJ B

Journal ref: Eur. Phys. J. B 29, 629-633 (2002)

Doubled Full Shot Noise in Quantum Coherent Superconductor - Semiconductor Junctions

Authors: F. Lefloch, C. Hoffmann, M. Sanquer, D. Quirion

Abstract: We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle co… ▽ More We performed low temperature shot noise measurements in Superconductor (TiN) - strongly disordered normal metal (heavily doped Si) weakly transparent junctions. We show that the conductance has a maximum due to coherent multiple reflections at low energy and that shot noise is then twice the Poisson noise (S=4eI). The shot noise changes to the normal value (S=2eI) due to a large quasiparticle contribution. △ Less

Submitted 18 February, 2003; v1 submitted 7 August, 2002; originally announced August 2002.

Comments: published in Physical Review Letters

Journal ref: Phys. Rev. Lett. 90, 067002 (2003)

Mesoscopic proximity effect in double barrier Superconductor/Normal Metal junctions

Authors: D. Quirion, C. Hoffmann, F. Lefloch, M. Sanquer

Abstract: We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conducta… ▽ More We report transport measurements down to T=60mK of SININ and SNIN structures in the diffusive limit. We fabricated Al-AlOx/Cu/AlOx/Cu (SININ) and Al/Cu/AlOx/Cu (SNIN) vertical junctions. For the first time, a zero bias anomaly was observed in a metallic SININ structure. We attribute this peak of conductance to coherent multi-reflections of electrons between the two tunnel barriers. This conductance maximum is quantitatively fitted by the relevant theory of mesoscopic SININ structures. When the barrier at the SN interface is removed (SNIN structure), we observe a peak of conductance at finite voltage accompagnied by an excess of sub-gap conductance. △ Less

Submitted 8 January, 2002; originally announced January 2002.

Comments: 4 pages, 4 figures, editorially approved for publication in Phys. Rev. B Rapid Comm

Spatially resolved spectroscopy on a superconducting proximity structure

Authors: M. Vinet, C. Chapelier, F. Lefloch

Abstract: We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance $x$ to the NS interface. The sample consists of a pattern of alternate stripes of Au and Nb made by UV-lithography. We used a low temperature scanning tunneling microscope to record simultaneously $dI/dV(V,x)$ curves and the topographic profi… ▽ More We investigated the local density of states (LDOS) of a normal metal (N) in good electrical contact with a superconductor (S) as a function of the distance $x$ to the NS interface. The sample consists of a pattern of alternate stripes of Au and Nb made by UV-lithography. We used a low temperature scanning tunneling microscope to record simultaneously $dI/dV(V,x)$ curves and the topographic profile $z(x)$. Nearby the NS interface, all the spectra show a dip near the Fermi energy but depending on the geometry, different behaviours can be distinguished. First, when the characteristic size of the normal metal $L$ is much larger than the coherence length $ξ_N \simeq \sqrt{\hbar D_N/ 2Δ}$, the spectral extension of the dip decreases from $Δ$ at the NS interface to zero at distances $x\ggξ_N$. Second, when $L$ is comparable to $ξ_N$ the apparent gap in the LDOS is space-independent and related to the Thouless energy. △ Less

Submitted 19 April, 2000; originally announced April 2000.

Comments: 4 pages, 4 figures

Proximity effect in planar TiN-Silicon junctions

Authors: D. Quirion, F. Lefloch, M. Sanquer

Abstract: We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (''reflectionless tunneling''). This Zero Bias A… ▽ More We measured the low temperature subgap resistance of titanium nitride (superconductor, Tc=4.6K)/highly doped silicon (degenerated semiconductor) SIN junctions, where I stands for the Schottky barrier. At low energies, the subgap conductance is enhanced due to coherent backscattering of the electrons towards the interface by disorder in the silicon (''reflectionless tunneling''). This Zero Bias Anomaly (ZBA) is destroyed by the temperature or the magnetic field above 250mK or 0.04T respectively. The overall differential resistance behavior (vs temperature and voltage) is compared to existing theories and values for the depairing rate and the barrier transmittance are extracted. Such an analysis leads us to introduce an effective temperature for the electrons and to discuss heat dissipation through the SIN interface. △ Less

Submitted 24 May, 2000; v1 submitted 9 March, 2000; originally announced March 2000.

Comments: 23 pages, 6 figures, added references and minor corrections. Accepted to Journal of Low Temperature Physics

Proximity effect in planar Superconductor/Semiconductor junction

Authors: F. Lefloch, D. Quirion, M. Sanquer

Abstract: We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the temperature is lowered, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature.… ▽ More We have measured the very low temperature (down to 30 mK) subgap resistance of Titanium Nitride (Superconductor, Tc = 4.6 K)/highly doped Silicon (Semiconductor) SIN junction (the insulating layer stands for the Schottky barrier). As the temperature is lowered, the resistance increases as expected in SIN junction. Around 300 mK, the resistance shows a maximum and decreases at lower temperature. This observed behavior is due to coherent backscattering towards the interface by disorder in Silicon ("Reflectionless tunneling"). This effect is also observed in the voltage dependence of the resistance (Zero Bias Anomaly) at low temperature (T<300 mK). The overall resistance behavior (in both its temperature and voltage dependence) is compared to existing theories and values for the depairing rate, the barrier resistance and the effective carrier temperature are extracted. △ Less

Submitted 29 July, 1999; v1 submitted 22 June, 1999; originally announced June 1999.

Comments: Submitted to LT22, Helsinki - August 1999, phbauth.cls included

Non linear flux flow in TiN superconducting thin film

Authors: F. Lefloch, C. Hoffmann, O. Demolliens

Abstract: We have studied the superconducting behavior of 100 nm Titanium Nitride (TiN) thin film in a perpendicular magnetic field. We found a zero field transition temperature of 4.6 K and a slope in the H-T plane of -0.745 T/K. At 4.2 K, we have performed careful transport measurements by measuring both the differential resistivity and voltage as a function of a DC current. Our results are analyzed in… ▽ More We have studied the superconducting behavior of 100 nm Titanium Nitride (TiN) thin film in a perpendicular magnetic field. We found a zero field transition temperature of 4.6 K and a slope in the H-T plane of -0.745 T/K. At 4.2 K, we have performed careful transport measurements by measuring both the differential resistivity and voltage as a function of a DC current. Our results are analyzed in the framework of linear and non linear flux flow behavior. In particular, we have observed an electronic instability at high vortex velocities and from its dependence with respect to the applied magnetic field, we can exctract the inelastic scattering time and diffusion length of the quasiparticles. △ Less

Submitted 20 July, 1999; v1 submitted 3 March, 1999; originally announced March 1999.

Journal ref: Physica C, 319,3-4 (1999)258