Balanced Detection in Femtosecond X-ray Absorption Spectroscopy to Reach the Ultimate Sensitivity Limit
Authors:
W. F. Schlotter,
M. Beye,
S. Zohar,
G. Coslovich,
G. L. Dakovski,
M. -F. Lin,
Y. Liu,
A. Reid,
S. Stubbs,
P. Walter,
K. Nakahara,
P. Hart,
P. S. Miedema,
L. LeGuyader,
K. Hofhuis,
Phu Tran Phong Le,
Johan E. ten Elshof,
H. Hilgenkamp,
G. Koster,
X. H. Verbeek,
S. Smit,
M. S. Golden,
H. A. Durr,
A. Sakdinawat
Abstract:
X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth (…
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X-ray absorption spectroscopy (XAS) is a powerful and well established technique with sensitivity to elemental and chemical composition. Despite these advantages, its implementation has not kept pace with the development of ultrafast pulsed x-ray sources where XAS can capture femtosecond chemical processes. X-ray Free Electron Lasers (XFELs) deliver femtosecond, narrow bandwidth ($\frac{ΔE}{E} < 0.5\%$) pulses containing $\sim 10^{10}$ photons. However, the energy contained in each pulse fluctuates thus complicating pulse by pulse efforts to quantify the number of photons. Improvements in counting the photons in each pulse have defined the state of the art for XAS sensitivity. Here we demonstrate a final step in these improvements through a balanced detection method that approaches the photon counting shot noise limit. In doing so, we obtain high quality absorption spectra from the insulator-metal transition in VO$_2$ and unlock a method to explore dilute systems, subtle processes and nonlinear phenomena with ultrafast x-rays. The method is especially beneficial for x-ray light sources where integration and averaging are not viable options to improve sensitivity.
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Submitted 24 June, 2020;
originally announced June 2020.
Tailoring Vanadium Dioxide Film Orientation using Nanosheets: A Combined Microscopy, Diffraction, Transport and Soft X-ray in Transmission Study
Authors:
Phu Tran Phong Le,
Kevin Hofhuis,
Abhi Rana,
Mark Huijben,
Hans Hilgenkamp,
G. Rijnders,
A. ten Elshof,
Gertjan Koster,
Nicolas Gauquelin,
Gunnar Lumbeeck,
Christian Schlüßler-Langeheine,
Horia Popescu,
F. Fortuna,
Steef Smit,
Xanthe H. Verbeek,
Georgios Araizi-Kanoutas,
Shrawan Mishra,
Igor Vakivskyi,
Hermann A. Durr,
Mark S. Golden
Abstract:
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R…
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VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si substrates or X-ray transparent silicon nitride membranes. The out-of-plane orientation of the VO2 thin films was controlled at will between (011)M1/(110)R and (-402)M1/(002)R by coating the bulk substrates with Ti0.87O2 and NbWO6 nanosheets, respectively, prior to VO2 growth. Temperature dependent X-ray diffraction and automated crystal orientation mapping in microprobe TEM mode (ACOM-TEM) characterized the high phase purity, the crystallographic and orientational properties of the VO2 films. Transport measurements and soft X-ray absorption in transmission are used to probe the VO2 metal-insulator transition, showing results of a quality equal to those from epitaxial films on bulk single-crystal substrates. Successful local manipulation of two different VO2 orientations on a single substrate is demonstrated using VO2 grown on lithographically-patterned lines of Ti0.87O2 and NbWO6 nanosheets investigated by electron backscatter diffraction. Finally, the excellent suitability of these nanosheet-templated VO2 films for advanced lensless imaging of the metal-insulator transition using coherent soft X-rays is discussed.
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Submitted 25 January, 2019;
originally announced January 2019.
