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Strongly dispersive dielectric properties of high-ScN-fraction ScAlN deposited by molecular beam epitaxy
Authors:
Vikrant J. Gokhale,
James G. Champlain,
Matthew T. Hardy,
James L. Hart,
Andrew C. Lang,
Saikat Mukhopadhyay,
Jason A. Roussos,
Shawn C. Mack,
Gabriel Giribaldi,
Luca Colombo,
Matteo Rinaldi,
Brian P. Downey
Abstract:
We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-fraction (30%-40% ScN fraction) samples from 20 Hz to 10 GHz. We find that real permittivity ε' increases significantly with increasing ScN fraction; a trend con…
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We present a comprehensive study of dielectric properties including complex permittivity, loss, and leakage of high-ScN-fraction ScAlN thin films grown using molecular beam epitaxy (MBE). Dielectric spectroscopy is carried out on high-ScN-fraction (30%-40% ScN fraction) samples from 20 Hz to 10 GHz. We find that real permittivity ε' increases significantly with increasing ScN fraction; a trend confirmed by density functional theory. Further, ε' is strongly dispersive with frequency and increasing ScN fraction, with values for Sc0.4Al0.6N varying from 150 down to 60 with increasing frequency. Loss, dispersion, and DC leakage current correspondingly increase with ScN fraction. The high ε' and strongly dispersive behavior in MBE ScAlN are not observed in a sputter-deposited ScAlN control with a similar ScN fraction, highlighting fundamental differences between films produced by the two deposition methods. Microscopy and spectroscopy analyses are carried out on MBE- and sputter-deposited samples to compare microstructure, alloy, and dopant concentration.
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Submitted 6 February, 2025;
originally announced February 2025.
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Multi-modal Spectroscopic Study of Surface Termination Evolution in Cr2TiC2Tx MXene
Authors:
James L. Hart,
Kanit Hantanasirisakul,
Andrew C. Lang,
Yuanyuan Li,
Faisal Mehmood,
Ruth Pachter,
Anatoly I. Frenkel,
Yury Gogotsi,
Mitra L. Taheri
Abstract:
Control of surface functionalization of MXenes holds great potential, and in particular, may lead to tuning of magnetic and electronic order in the recently reported magnetic Cr2TiC2Tx. Here, vacuum annealing experiments of Cr2TiC2Tx are reported with in situ electron energy loss spectroscopy and novel in situ Cr K-edge extended energy loss fine structure analysis, which directly tracks the evolut…
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Control of surface functionalization of MXenes holds great potential, and in particular, may lead to tuning of magnetic and electronic order in the recently reported magnetic Cr2TiC2Tx. Here, vacuum annealing experiments of Cr2TiC2Tx are reported with in situ electron energy loss spectroscopy and novel in situ Cr K-edge extended energy loss fine structure analysis, which directly tracks the evolution of the MXene surface coordination environment. These in situ probes are accompanied by benchmarking synchrotron X-ray absorption fine structure measurements and density functional theory calculations. With the etching method used here, the MXene has an initial termination chemistry of Cr2TiC2O1.3F0.8. Annealing to 600 C results in the complete loss of -F, but -O termination is thermally stable up to (at least) 700 C. These findings demonstrate thermal control of -F termination in Cr2TiC2Tx and offer a first step towards termination engineering this MXene for magnetic applications. Moreover, this work demonstrates high energy electron spectroscopy as a powerful approach for surface characterization in 2D materials.
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Submitted 5 January, 2021;
originally announced January 2021.
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Epitaxial bulk acoustic wave resonators as highly coherent multi-phonon sources for quantum acoustodynamics
Authors:
Vikrant J. Gokhale,
Brian P. Downey,
D. Scott Katzer,
Neeraj Nepal,
Andrew C. Lang,
Rhonda M. Stroud,
David J. Meyer
Abstract:
Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface rough…
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Solid-state quantum acoustodynamic (QAD) systems provide a compact platform for quantum information storage and processing by coupling acoustic phonon sources with superconducting or spin qubits. The multi-mode composite high-overtone bulk acoustic wave resonator (HBAR) is a popular phonon source well suited for QAD. However, scattering from defects, grain boundaries, and interfacial/surface roughness in the composite transducer severely limits the phonon relaxation time in sputter-deposited devices. Here, we grow an epitaxial-HBAR, consisting of a metallic NbN bottom electrode and a piezoelectric GaN film on a SiC substrate. The acoustic impedance-matched epi-HBAR has a power injection efficiency > 99% from transducer to phonon cavity. The smooth interfaces and low defect density reduce phonon losses, yielding fxQ products and phonon lifetimes up to 1.36 x 10^17 Hz and 500 microseconds respectively. The GaN/NbN/SiC epi-HBAR is an electrically actuated, multi-mode phonon source that can be directly interfaced with NbN-based superconducting qubits or SiC-based spin qubits.
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Submitted 24 March, 2020;
originally announced March 2020.
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A Synchrotron in the TEM: Spatially Resolved Fine Structure Spectra at High Energies
Authors:
James L Hart,
Andrew C Lang,
Yuanyuan Li,
Kanit Hantanasirisakul,
Anatoly I Frenkel,
Mitra L Taheri
Abstract:
Fine structure analysis of core electron excitation spectra is a cornerstone characterization technique across the physical sciences. Spectra are most commonly measured with synchrotron radiation and X-ray spot sizes on the μm to mm scale. Alternatively, electron energy loss spectroscopy (EELS) in the (scanning) transmission electron microscope ((S)TEM) offers over a 1000 fold increase in spatial…
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Fine structure analysis of core electron excitation spectra is a cornerstone characterization technique across the physical sciences. Spectra are most commonly measured with synchrotron radiation and X-ray spot sizes on the μm to mm scale. Alternatively, electron energy loss spectroscopy (EELS) in the (scanning) transmission electron microscope ((S)TEM) offers over a 1000 fold increase in spatial resolution, a transformative advantage for studies of nanostructured materials. However, EELS applicability is generally limited to excitations below ~2 keV, i.e., mostly to elements in just the first three rows of the periodic table. Here, using state-of-the-art EELS instrumentation, we present nm resolved fine structure EELS measurements out to an unprecedented 12 keV with signal-to-noise ratio rivaling that of a synchrotron. We showcase the advantages of this technique in exemplary experiments.
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Submitted 13 September, 2019;
originally announced September 2019.
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On the interactions of Ti${_2}$AlC, Ti${_3}$AlC${_2}$, Ti${_3}$SiC${_2}$ and Cr${_2}$AlC with palladium at 900 °C
Authors:
G. W. Bentzel,
M. Sokol,
J. Griggs,
A. C. Lang,
M. W. Barsoum
Abstract:
Herein we report on the reactivity between palladium, Pd, and the MAX phases, Ti${_2}$AlC, Ti${_3}$AlC${_2}$, Ti${_3}$SiC${_2}$ and Cr${_2}$AlC. Diffusion couples of Pd/MAX were heated to 900 °C under uniaxial stress of ~20 MPa for 2, 4, and 10 h in a vacuum (<1 Pa) hot press. The diffusion couples were examined using X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spec…
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Herein we report on the reactivity between palladium, Pd, and the MAX phases, Ti${_2}$AlC, Ti${_3}$AlC${_2}$, Ti${_3}$SiC${_2}$ and Cr${_2}$AlC. Diffusion couples of Pd/MAX were heated to 900 °C under uniaxial stress of ~20 MPa for 2, 4, and 10 h in a vacuum (<1 Pa) hot press. The diffusion couples were examined using X-ray diffraction, scanning electron microscopy and energy-dispersive X-ray spectroscopy. After heating to 900 °C for 10 h, the diffusion layer thicknesses in the Ti${_2}$AlC/Pd, Cr${_2}$AlC/Pd, Ti${_3}$AlC${_2}$/Pd and Ti${_3}$SiC${_2}$/Pd couples were found to be 35, 45, 105 and 410 mm, respectively. Thus, Ti${_2}$AlC is the most resistant to reaction, while Ti${_3}$SiC${_2}$ is least resistant, with Cr${_2}$AlC and Ti${_3}$AlC${_2}$, in between. In all cases, the reaction occurred by the diffusion of the A-group element into Pd, concomitant with Pd diffusion into the MAX phase. No diffusion of the M and X atoms was detected.
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Submitted 24 October, 2018;
originally announced November 2018.