Operating two exchange-only qubits in parallel
Authors:
Mateusz T. Mądzik,
Florian Luthi,
Gian Giacomo Guerreschi,
Fahd A. Mohiyaddin,
Felix Borjans,
Jason D. Chadwick,
Matthew J. Curry,
Joshua Ziegler,
Sarah Atanasov,
Peter L. Bavdaz,
Elliot J. Connors,
J. Corrigan,
H. Ekmel Ercan,
Robert Flory,
Hubert C. George,
Benjamin Harpt,
Eric Henry,
Mohammad M. Islam,
Nader Khammassi,
Daniel Keith,
Lester F. Lampert,
Todor M. Mladenov,
Randy W. Morris,
Aditi Nethwewala,
Samuel Neyens
, et al. (16 additional authors not shown)
Abstract:
Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in qua…
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Semiconductors are among the most promising platforms to implement large-scale quantum computers, as advanced manufacturing techniques allow fabrication of large quantum dot arrays. Various qubit encodings can be used to store and manipulate quantum information on these quantum dot arrays. Regardless of qubit encoding, precise control over the exchange interaction between electrons confined in quantum dots in the array is critical. Furthermore, it is necessary to execute high-fidelity quantum operations concurrently to make full use of the limited coherence of individual qubits. Here, we demonstrate the parallel operation of two exchange-only qubits, consisting of six quantum dots in a linear arrangement. Using randomized benchmarking techniques, we show that issuing pulses on the five barrier gates to modulate exchange interactions in a maximally parallel way maintains the quality of qubit control relative to sequential operation. The techniques developed to perform parallel exchange pulses can be readily adapted to other quantum-dot based encodings. Moreover, we show the first experimental demonstrations of an iSWAP gate and of a charge-locking Pauli spin blockade readout method. The results are validated using cross-entropy benchmarking, a technique useful for performance characterization of larger quantum computing systems; here it is used for the first time on a quantum system based on semiconductor technology.
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Submitted 1 April, 2025;
originally announced April 2025.
Probing single electrons across 300 mm spin qubit wafers
Authors:
Samuel Neyens,
Otto K. Zietz,
Thomas F. Watson,
Florian Luthi,
Aditi Nethwewala,
Hubert C. George,
Eric Henry,
Mohammad Islam,
Andrew J. Wagner,
Felix Borjans,
Elliot J. Connors,
J. Corrigan,
Matthew J. Curry,
Daniel Keith,
Roza Kotlyar,
Lester F. Lampert,
Mateusz T. Madzik,
Kent Millard,
Fahd A. Mohiyaddin,
Stefano Pellerano,
Ravi Pillarisetty,
Mick Ramsey,
Rostyslav Savytskyy,
Simon Schaal,
Guoji Zheng
, et al. (5 additional authors not shown)
Abstract:
Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient dev…
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Building a fault-tolerant quantum computer will require vast numbers of physical qubits. For qubit technologies based on solid state electronic devices, integrating millions of qubits in a single processor will require device fabrication to reach a scale comparable to that of the modern CMOS industry. Equally importantly, the scale of cryogenic device testing must keep pace to enable efficient device screening and to improve statistical metrics like qubit yield and voltage variation. Spin qubits based on electrons in Si have shown impressive control fidelities but have historically been challenged by yield and process variation. Here we present a testing process using a cryogenic 300 mm wafer prober to collect high-volume data on the performance of hundreds of industry-manufactured spin qubit devices at 1.6 K. This testing method provides fast feedback to enable optimization of the CMOS-compatible fabrication process, leading to high yield and low process variation. Using this system, we automate measurements of the operating point of spin qubits and probe the transitions of single electrons across full wafers. We analyze the random variation in single-electron operating voltages and find that the optimized fabrication process leads to low levels of disorder at the 300 mm scale. Together these results demonstrate the advances that can be achieved through the application of CMOS industry techniques to the fabrication and measurement of spin qubit devices.
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Submitted 3 May, 2024; v1 submitted 10 July, 2023;
originally announced July 2023.
