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Heuristic ansatz design for trainable ion-native digital-analog quantum circuits
Authors:
Georgii Paradezhenko,
Daniil Rabinovich,
Ernesto Campos,
Kirill Lakhmanskiy
Abstract:
Variational quantum algorithms have become a standard approach for solving a wide range of problems on near-term quantum computers. Identifying an appropriate ansatz configuration for variational algorithms, however, remains a challenging task, especially when taking into account restrictions imposed by real quantum platforms. This motivated the development of digital-analog quantum circuits, wher…
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Variational quantum algorithms have become a standard approach for solving a wide range of problems on near-term quantum computers. Identifying an appropriate ansatz configuration for variational algorithms, however, remains a challenging task, especially when taking into account restrictions imposed by real quantum platforms. This motivated the development of digital-analog quantum circuits, where sequences of quantum gates are alternated with natural Hamiltonian evolutions. A prominent example is the use of the controllable long-range Ising interaction induced in ion-based quantum computers. This interaction has recently been applied to develop an algorithm similar to the quantum approximate optimization algorithm (QAOA), but native to the ion hardware. The performance of this algorithm has demonstrated a strong dependence on the strengths of the individual ion-ion interactions, which serve as ansatz hyperparameters. In this work, we propose a heuristic for identifying a problem-specific ansatz configuration, which enhances the trainability of the ion native digital-analog circuit. The proposed approach is systematically applied to random instances of the Sherrington-Kirkpatrick Hamiltonian for up to 15 qubits, providing favorable cost landscapes. As the result, the developed approach identifies a well-trainable ion native ansatz, which requires a lower circuit depth to solve specific problems as compared to standard QAOA. This brings the algorithm one step closer to its large scale practical implementation.
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Submitted 21 May, 2025;
originally announced May 2025.
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Towards practical non-Markovianity measures: Normalization and regularization techniques
Authors:
L. A. Mazhorina,
N. D. Korolev,
N. V. Morozov,
E. Yu. Egorova,
A. V. Zotova,
T. A. Chudakova,
G. S. Mazhorin,
N. Sterligov,
A. S. Kazmina,
A. M. Polyanskiy,
N. Abramov,
I. O. Gridnev,
M. A. Gavreev,
A. Matveev,
O. Lakhmanskaya,
I. A. Simakov,
E. A. Polyakov,
K. Lakhmanskiy
Abstract:
Measures characterizing the non-Markovianity degree of the quantum dynamics have several drawbacks when applied to real devices. They depend on the chosen measurement time interval and are highly sensitive to experimental noise and errors. We propose several techniques to enhance the practical applicability of the measures and verify our findings experimentally on a superconducting transmon and a…
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Measures characterizing the non-Markovianity degree of the quantum dynamics have several drawbacks when applied to real devices. They depend on the chosen measurement time interval and are highly sensitive to experimental noise and errors. We propose several techniques to enhance the practical applicability of the measures and verify our findings experimentally on a superconducting transmon and a trapped-ion qubit. The time dependence can be disregarded by introduction of the measure per oscillation, while the sensitivity to noise is reduced by applying a regularization procedure. The results for both types of qubits are compared with theoretical predictions for a simple model of non-Markovianity based on qubit-qubit interaction.
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Submitted 2 April, 2025; v1 submitted 30 March, 2025;
originally announced March 2025.
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Fast Mølmer-Sørensen gates in trapped-ion quantum processors with compensated carrier transition
Authors:
Evgeny Anikin,
Andrey Chuchalin,
Nikita Morozov,
Olga Lakhmanskaya,
Kirill Lakhmanskiy
Abstract:
Carrier transition is one of the major factors hindering the high-speed implementation of the Mølmer-Sørensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the Mølmer-Sørensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin…
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Carrier transition is one of the major factors hindering the high-speed implementation of the Mølmer-Sørensen gates in trapped-ion quantum processors. We present an approach to design laser pulse shapes for the Mølmer-Sørensen gate in ion chains which accounts for the effect of carrier transition on qubit-phonon dynamics. We show that the fast-oscillating carrier term effectively modifies the spin-dependent forces acting on ions, and this can be compensated by a simple nonlinear transformation of a laser pulse. Using numerical simulations for short ion chains and perturbation theory for longer chains up to $20$ ions, we demonstrate that our approach allows to reach the infidelity below $10^{-4}$ while keeping the gate duration of the order of tens of microseconds.
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Submitted 9 April, 2025; v1 submitted 4 January, 2025;
originally announced January 2025.
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Mitigating Quantum Gate Errors for Variational Eigensolvers Using Hardware-Inspired Zero-Noise Extrapolation
Authors:
Alexey Uvarov,
Daniil Rabinovich,
Olga Lakhmanskaya,
Kirill Lakhmanskiy,
Jacob Biamonte,
Soumik Adhikary
Abstract:
Variational quantum algorithms have emerged as a cornerstone of contemporary quantum algorithms research. Practical implementations of these algorithms, despite offering certain levels of robustness against systematic errors, show a decline in performance due to the presence of stochastic errors and limited coherence time. In this work, we develop a recipe for mitigating quantum gate errors for va…
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Variational quantum algorithms have emerged as a cornerstone of contemporary quantum algorithms research. Practical implementations of these algorithms, despite offering certain levels of robustness against systematic errors, show a decline in performance due to the presence of stochastic errors and limited coherence time. In this work, we develop a recipe for mitigating quantum gate errors for variational algorithms using zero-noise extrapolation. We introduce an experimentally amenable method to control error strength in the circuit. We utilize the fact that gate errors in a physical quantum device are distributed inhomogeneously over different qubits and qubit pairs. As a result, one can achieve different circuit error sums based on the manner in which abstract qubits in the circuit are mapped to a physical device. We find that the estimated energy in the variational approach is approximately linear with respect to the circuit error sum (CES). Consequently, a linear fit through the energy-CES data, when extrapolated to zero CES, can approximate the energy estimated by a noiseless variational algorithm. We demonstrate this numerically and investigate the applicability range of the technique.
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Submitted 9 July, 2024; v1 submitted 20 July, 2023;
originally announced July 2023.
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Individual addressing of ion qubits with counter-propagating optical frequency combs
Authors:
Evgeny Anikin,
Lianna A. Akopyan,
Mikhail Popov,
Yelnury Suleimen,
Olga Lakhmanskaya,
Kirill Lakhmanskiy
Abstract:
We propose a new method of individual single-qubit addressing of linear trapped-ion chains utilizing two ultrastable femtosecond frequency combs. For that, we suggest implementing the single-qubit gates with two counter-propagating frequency combs overlapping on the target ion and causing the AC Stark shift between the qubit levels. With analytical calculations and numerical modeling, we show that…
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We propose a new method of individual single-qubit addressing of linear trapped-ion chains utilizing two ultrastable femtosecond frequency combs. For that, we suggest implementing the single-qubit gates with two counter-propagating frequency combs overlapping on the target ion and causing the AC Stark shift between the qubit levels. With analytical calculations and numerical modeling, we show that the arbitrary single-qubit rotations can be indeed realized using only laser fields propagating along the ion chain. We analyze the error sources for the proposed addressing method and prove that it allows implementing the single-qubit gates with high fidelity.
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Submitted 16 January, 2023;
originally announced January 2023.
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Surface trap with adjustable ion couplings for scalable and parallel gates
Authors:
Yelnury Suleimen,
Artem Podlesnyy,
Lianna A. Akopyan,
Nikita Sterligov,
Olga Lakhmanskaya,
Evgeny Anikin,
Arthur Matveev,
Kirill Lakhmanskiy
Abstract:
We describe the design and operation of a surface-electrode Paul trap for parallel entangling gate implementation. In particular, we demonstrate the possibility of separating or coupling ion motion by adjusting the DC-voltages on a set of electrodes and show the possibility of parallel MS-gate operations for specific voltage configurations. We verify the scalability of this approach and characteri…
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We describe the design and operation of a surface-electrode Paul trap for parallel entangling gate implementation. In particular, we demonstrate the possibility of separating or coupling ion motion by adjusting the DC-voltages on a set of electrodes and show the possibility of parallel MS-gate operations for specific voltage configurations. We verify the scalability of this approach and characterize the performance of these gates in the presence of the finite phonon mode occupation and of the finite drift of the phonon frequencies. Additionally, we investigate how the number of ions per individual trapping site and anharmonic potential terms affect the coupling between the wells.
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Submitted 17 January, 2024; v1 submitted 14 November, 2022;
originally announced November 2022.
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Ion native variational ansatz for quantum approximate optimization
Authors:
Daniil Rabinovich,
Soumik Adhikary,
Ernesto Campos,
Vishwanathan Akshay,
Evgeny Anikin,
Richik Sengupta,
Olga Lakhmanskaya,
Kiril Lakhmanskiy,
Jacob Biamonte
Abstract:
Variational quantum algorithms involve training parameterized quantum circuits using a classical co-processor. An important variational algorithm, designed for combinatorial optimization, is the quantum approximate optimization algorithm. Realization of this algorithm on any modern quantum processor requires either embedding a problem instance into a Hamiltonian or emulating the corresponding prop…
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Variational quantum algorithms involve training parameterized quantum circuits using a classical co-processor. An important variational algorithm, designed for combinatorial optimization, is the quantum approximate optimization algorithm. Realization of this algorithm on any modern quantum processor requires either embedding a problem instance into a Hamiltonian or emulating the corresponding propagator by a gate sequence. For a vast range of problem instances this is impossible due to current circuit depth and hardware limitations. Hence we adapt the variational approach -- using ion native Hamiltonians -- to create ansatze families that can prepare the ground states of more general problem Hamiltonians. We analytically determine symmetry protected classes that make certain problem instances inaccessible unless this symmetry is broken. We exhaustively search over six qubits and consider upto twenty circuit layers, demonstrating that symmetry can be broken to solve all problem instances of the Sherrington-Kirkpatrick Hamiltonian. Going further, we numerically demonstrate training convergence and level-wise improvement for up to twenty qubits. Specifically these findings widen the class problem instances which might be solved by ion based quantum processors. Generally these results serve as a test-bed for quantum approximate optimization approaches based on system native Hamiltonians and symmetry protection.
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Submitted 23 June, 2022;
originally announced June 2022.
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Electric field noise in a high-temperature superconducting surface ion trap
Authors:
Philip C. Holz,
Kirill Lakhmanskiy,
Dominic Rathje,
Philipp Schindler,
Yves Colombe,
Rainer Blatt
Abstract:
Scaling up trapped-ion quantum computers requires new trap materials to be explored. Here, we present experiments with a surface ion trap made from the high-temperature superconductor YBCO, a promising material for future trap designs. We show that voltage noise from superconducting electrode leads is negligible within the sensitivity $S_V=9\times 10^{-20}\,\mathrm{V}^2\mathrm{Hz}^{-1}$ of our set…
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Scaling up trapped-ion quantum computers requires new trap materials to be explored. Here, we present experiments with a surface ion trap made from the high-temperature superconductor YBCO, a promising material for future trap designs. We show that voltage noise from superconducting electrode leads is negligible within the sensitivity $S_V=9\times 10^{-20}\,\mathrm{V}^2\mathrm{Hz}^{-1}$ of our setup, and for lead dimensions typical for advanced trap designs. Furthermore, we investigate the frequency and temperature dependence of electric field noise above a YBCO surface. We find a $1/f$ spectral dependence of the noise and a non-trivial temperature dependence, with a plateau in the noise stretching over roughly $60\,\mathrm{K}$. The onset of the plateau coincides with the superconducting transition, indicating a connection between the dominant noise and the YBCO trap material. We exclude the YBCO bulk as origin of the noise and suggest further experiments to decide between the two remaining options explaining the observed temperature dependence: noise screening within the superconducting phase, or surface noise activated by the YBCO bulk through some unknown mechanism.
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Submitted 7 June, 2021;
originally announced June 2021.
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A compact ion-trap quantum computing demonstrator
Authors:
Ivan Pogorelov,
Thomas Feldker,
Christian D. Marciniak,
Lukas Postler,
Georg Jacob,
Oliver Krieglsteiner,
Verena Podlesnic,
Michael Meth,
Vlad Negnevitsky,
Martin Stadler,
Bernd Höfer,
Christoph Wächter,
Kirill Lakhmanskiy,
Rainer Blatt,
Philipp Schindler,
Thomas Monz
Abstract:
Quantum information processing is steadily progressing from a purely academic discipline towards applications throughout science and industry. Transitioning from lab-based, proof-of-concept experiments to robust, integrated realizations of quantum information processing hardware is an important step in this process. However, the nature of traditional laboratory setups does not offer itself readily…
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Quantum information processing is steadily progressing from a purely academic discipline towards applications throughout science and industry. Transitioning from lab-based, proof-of-concept experiments to robust, integrated realizations of quantum information processing hardware is an important step in this process. However, the nature of traditional laboratory setups does not offer itself readily to scaling up system sizes or allow for applications outside of laboratory-grade environments. This transition requires overcoming challenges in engineering and integration without sacrificing the state-of-the-art performance of laboratory implementations. Here, we present a 19-inch rack quantum computing demonstrator based on $^{40}\textrm{Ca}^+$ optical qubits in a linear Paul trap to address many of these challenges. We outline the mechanical, optical, and electrical subsystems. Further, we describe the automation and remote access components of the quantum computing stack. We conclude by describing characterization measurements relevant to digital quantum computing including entangling operations mediated by the Molmer-Sorenson interaction. Using this setup we produce maximally-entangled Greenberger-Horne-Zeilinger states with up to 24 ions without the use of post-selection or error mitigation techniques; on par with well-established conventional laboratory setups.
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Submitted 7 June, 2021; v1 submitted 27 January, 2021;
originally announced January 2021.
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The Panopticon device: an integrated Paul-trap-hemispherical mirror system for quantum optics
Authors:
Gabriel Araneda,
Giovanni Cerchiari,
Daniel B. Higginbottom,
Philip C. Holz,
Kirill Lakhmanskiy,
Petr Obšil,
Yves Colombe,
Rainer Blatt
Abstract:
We present the design and construction of a new experimental apparatus for the trapping of single Ba$^+$ ions in the center of curvature of an optical-quality hemispherical mirror. We describe the layout, fabrication and integration of the full setup, consisting of a high-optical access monolithic `3D-printed' Paul trap, the hemispherical mirror, a diffraction-limited in-vacuum lens (NA = 0.7) for…
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We present the design and construction of a new experimental apparatus for the trapping of single Ba$^+$ ions in the center of curvature of an optical-quality hemispherical mirror. We describe the layout, fabrication and integration of the full setup, consisting of a high-optical access monolithic `3D-printed' Paul trap, the hemispherical mirror, a diffraction-limited in-vacuum lens (NA = 0.7) for collection of atomic fluorescence and a state-of-the art ultra-high vacuum vessel. This new apparatus enables the study of quantum electrodynamics effects such as strong inhibition and enhancement of spontaneous emission, and achieves a collection efficiency of the emitted light in a single optical mode of 31%.
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Submitted 17 October, 2020; v1 submitted 8 June, 2020;
originally announced June 2020.
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Two-dimensional linear trap array for quantum information processing
Authors:
Philip C. Holz,
Silke Auchter,
Gerald Stocker,
Marco Valentini,
Kirill Lakhmanskiy,
Clemens Rössler,
Paul Stampfer,
Sokratis Sgouridis,
Elmar Aschauer,
Yves Colombe,
Rainer Blatt
Abstract:
We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with…
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We present an ion-lattice quantum processor based on a two-dimensional arrangement of linear surface traps. Our design features a tunable coupling between ions in adjacent lattice sites and a configurable ion-lattice connectivity, allowing one, e.g., to realize rectangular and triangular lattices with the same trap chip. We present detailed trap simulations of a simplest-instance ion array with $2\times9$ trapping sites and report on the fabrication of a prototype device in an industrial facility. The design and the employed fabrication processes are scalable to larger array sizes. We demonstrate trapping of ions in rectangular and triangular lattices and demonstrate transport of a $2\times2$ ion-lattice over one lattice period.
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Submitted 21 September, 2020; v1 submitted 18 March, 2020;
originally announced March 2020.
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A room-temperature ion trapping apparatus with hydrogen partial pressure below $10^{-11}$ mBar
Authors:
P. Obšil,
A. Lešundák,
T. Pham,
K. Lakhmanskiy,
L. Podhora,
M. Oral,
O. Číp,
L. Slodička
Abstract:
The lifetime of trapped ion ensembles corresponds to a crucial parameter determining the potential scalability of their prospective applications and is often limited by the achievable vacuum level in the apparatus. We report on the realization of a room-temperature $^{40}{\rm Ca}^{+}$ ion trapping vacuum apparatus with unprecedentedly low reaction rates of ions with a dominant vacuum contaminant:…
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The lifetime of trapped ion ensembles corresponds to a crucial parameter determining the potential scalability of their prospective applications and is often limited by the achievable vacuum level in the apparatus. We report on the realization of a room-temperature $^{40}{\rm Ca}^{+}$ ion trapping vacuum apparatus with unprecedentedly low reaction rates of ions with a dominant vacuum contaminant: hydrogen. We present our trap assembly procedures and hydrogen pressure characterization by analysis of the CaH$^+$ molecule formation rate.
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Submitted 2 December, 2019; v1 submitted 30 April, 2019;
originally announced April 2019.
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Observation of superconductivity and surface noise using a single trapped ion as a field probe
Authors:
K. Lakhmanskiy,
P. C. Holz,
D. Schärtl,
B. Ames,
R. Assouly,
T. Monz,
Y. Colombe,
R. Blatt
Abstract:
Measuring and understanding electric field noise from bulk material and surfaces is important for many areas of physics. In this work, we introduce a method to detect in situ different sources of electric field noise using a single trapped ion as a sensor. We demonstrate the probing of electric field noise as small as $S_E = 5.2(11)\times 10^{-16}\,\text{V}^2\text{m}^{-2}\text{Hz}^{-1}$, the lowes…
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Measuring and understanding electric field noise from bulk material and surfaces is important for many areas of physics. In this work, we introduce a method to detect in situ different sources of electric field noise using a single trapped ion as a sensor. We demonstrate the probing of electric field noise as small as $S_E = 5.2(11)\times 10^{-16}\,\text{V}^2\text{m}^{-2}\text{Hz}^{-1}$, the lowest noise level observed with a trapped ion to our knowledge. Our setup incorporates a controllable noise source utilizing a high-temperature superconductor. This element allows us, first, to benchmark and validate the sensitivity of our probe. Second, to probe non-invasively bulk properties of the superconductor, observing for the first time a superconducting transition with an ion. For temperatures below the transition, we use our setup to assess different surface noise processes. The measured noise shows a crossover regime in the frequency domain, which cannot be explained by existing surface noise models. Our results open perspectives for new models in surface science and pave the way to test them experimentally.
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Submitted 3 September, 2019; v1 submitted 2 May, 2018;
originally announced May 2018.
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Cryogenic setup for trapped ion quantum computing
Authors:
M. F. Brandl,
M. W. van Mourik,
L. Postler,
A. Nolf,
K. Lakhmanskiy,
R. R. Paiva,
S. Möller,
N. Daniilidis,
H. Häffner,
V. Kaushal,
T. Ruster,
C. Warschburger,
H. Kaufmann,
U. G. Poschinger,
F. Schmidt-Kaler,
P. Schindler,
T. Monz,
R. Blatt
Abstract:
We report on the design of a cryogenic setup for trapped ion quantum computing containing a segmented surface electrode trap. The heat shield of our cryostat is designed to attenuate alternating magnetic field noise, resulting in 120~dB reduction of 50~Hz noise along the magnetic field axis. We combine this efficient magnetic shielding with high optical access required for single ion addressing as…
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We report on the design of a cryogenic setup for trapped ion quantum computing containing a segmented surface electrode trap. The heat shield of our cryostat is designed to attenuate alternating magnetic field noise, resulting in 120~dB reduction of 50~Hz noise along the magnetic field axis. We combine this efficient magnetic shielding with high optical access required for single ion addressing as well as for efficient state detection by placing two lenses each with numerical aperture 0.23 inside the inner heat shield. The cryostat design incorporates vibration isolation to avoid decoherence of optical qubits due to the motion of the cryostat. We measure vibrations of the cryostat of less than $\pm$20~nm over 2~s. In addition to the cryogenic apparatus, we describe the setup required for an operation with $^{\mathrm{40}}$Ca$^{\mathrm{+}}$ and $^{\mathrm{88}}$Sr$^{\mathrm{+}}$ ions. The instability of the laser manipulating the optical qubits in $^{\mathrm{40}}$Ca$^{\mathrm{+}}$ is characterized yielding a minimum of its Allan deviation of 2.4$\cdot$10$^{\mathrm{-15}}$ at 0.33~s. To evaluate the performance of the apparatus, we trapped $^{\mathrm{40}}$Ca$^{\mathrm{+}}$ ions, obtaining a heating rate of 2.14(16)~phonons/s and a Gaussian decay of the Ramsey contrast with a 1/e-time of 18.2(8)~ms.
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Submitted 18 July, 2016;
originally announced July 2016.
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Cryogenic silicon surface ion trap
Authors:
Michael Niedermayr,
Kirill Lakhmanskiy,
Muir Kumph,
Stefan Partel,
Johannes Edlinger,
Michael Brownnutt,
Rainer Blatt
Abstract:
Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be…
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Trapped ions are pre-eminent candidates for building quantum information processors and quantum simulators. They have been used to demonstrate quantum gates and algorithms, quantum error correction, and basic quantum simulations. However, to realise the full potential of such systems and make scalable trapped-ion quantum computing a reality, there exist a number of practical problems which must be solved. These include tackling the observed high ion-heating rates and creating scalable trap structures which can be simply and reliably produced. Here, we report on cryogenically operated silicon ion traps which can be rapidly and easily fabricated using standard semiconductor technologies. Single $^{40}$Ca$^+$ ions have been trapped and used to characterize the trap operation. Long ion lifetimes were observed with the traps exhibiting heating rates as low as $\dot{\bar{n}}=$ 0.33 phonons/s at an ion-electrode distance of 230 $μ$m. These results open many new avenues to arrays of micro-fabricated ion traps.
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Submitted 1 May, 2015; v1 submitted 20 March, 2014;
originally announced March 2014.
