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Spontaneous gap opening and potential excitonic states in an ideal Dirac semimetal Ta$_2$Pd$_3$Te$_5$
Authors:
Peng Zhang,
Yuyang Dong,
Dayu Yan,
Bei Jiang,
Tao Yang,
Jun Li,
Zhaopeng Guo,
Yong Huang,
Bo Hao,
Qing Li,
Yupeng Li,
Kifu Kurokawa,
Rui Wang,
Yuefeng Nie,
Makoto Hashimoto,
Donghui Lu,
Wen-He Jiao,
Jie Shen,
Tian Qian,
Zhijun Wang,
Youguo Shi,
Takeshi Kondo
Abstract:
The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitatio…
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The opening of an energy gap in the electronic structure generally indicates the presence of interactions. In materials with low carrier density and short screening length, long-range Coulomb interaction favors the spontaneous formation of electron-hole pairs, so-called excitons, opening an excitonic gap at the Fermi level. Excitonic materials host unique phenomenons associated with pair excitations. However, there is still no generally recognized single-crystal material with excitonic order, which is, therefore, awaited in condensed matter physics. Here, we show that excitonic states may exist in the quasi-one-dimensional material Ta$_2$Pd$_3$Te$_5$, which has an almost ideal Dirac-like band structure, with Dirac point located exactly at Fermi level. We find that an energy gap appears at 350 K, and it grows with decreasing temperature. The spontaneous gap opening is absent in a similar material Ta$_2$Ni$_3$Te$_5$. Intriguingly, the gap is destroyed by the potassium deposition on the crystal, likely due to extra-doped carriers. Furthermore, we observe a pair of in-gap flat bands, which is an analog of the impurity states in a superconducting gap. All these observations can be properly explained by an excitonic order, providing Ta$_2$Pd$_3$Te$_5$ as a new and promising candidate realizing excitonic states.
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Submitted 15 March, 2024; v1 submitted 22 December, 2023;
originally announced December 2023.
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Unveiling phase diagram of the lightly doped high-Tc cuprate superconductors with disorder removed
Authors:
Kifu Kurokawa,
Shunsuke Isono,
Yoshimitsu Kohama,
So Kunisada,
Shiro Sakai,
Ryotaro Sekine,
Makoto Okubo,
Matthew D. Watson,
Timur K. Kim,
Cephise Cacho,
Shik Shin,
Takami Tohyama,
Kazuyasu Tokiwa,
Takeshi Kondo
Abstract:
The currently established electronic phase diagram of cuprates is based on a study of single- and double-layered compounds. These CuO$_2$ planes, however, are directly contacted with dopant layers, thus inevitably disordered with an inhomogeneous electronic state. Here, we solve this issue by investigating a 6-layered Ba$_2$Ca$_5$Cu$_6$O$_{12}$(F,O)$_2$ with inner CuO$_2$ layers, which are clean w…
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The currently established electronic phase diagram of cuprates is based on a study of single- and double-layered compounds. These CuO$_2$ planes, however, are directly contacted with dopant layers, thus inevitably disordered with an inhomogeneous electronic state. Here, we solve this issue by investigating a 6-layered Ba$_2$Ca$_5$Cu$_6$O$_{12}$(F,O)$_2$ with inner CuO$_2$ layers, which are clean with the extremely low disorder, by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. We find a tiny Fermi pocket with a doping level less than 1% to exhibit well-defined quasiparticle peaks which surprisingly lack the polaronic feature. This provides the first evidence that the slightest amount of carriers is enough to turn a Mott insulating state into a metallic state with long-lived quasiparticles. By tuning hole carriers, we also find an unexpected phase transition from the superconducting to metallic states at 4%. Our results are distinct from the nodal liquid state with polaronic features proposed as an anomaly of the heavily underdoped cuprates.
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Submitted 14 July, 2023;
originally announced July 2023.
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Multipole polaron in the devil's staircase of CeSb
Authors:
Y. Arai,
Kenta Kuroda,
T. Nomoto,
Z. H. Tin,
S. Sakuragi,
C. Bareille,
S. Akebi,
K. Kurokawa,
Y. Kinoshita,
W. -L. Zhang,
S. Shin,
M. Tokunaga,
H. Kitazawa,
Y. Haga,
H. S. Suzuki,
S. Miyasaka,
S. Tajima,
K. Iwasa,
R. Arita,
Takeshi Kondo
Abstract:
Rare-earth intermetallic compounds exhibit rich phenomena induced by the interplay between localized $f$ orbitals and conduction electrons. However, since the energy scale of the crystal-electric-field splitting is only a few millielectronvolts, the nature of the mobile electrons accompanied by collective crystal-electric-field excitations has not been unveiled. Here, we examine the low-energy ele…
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Rare-earth intermetallic compounds exhibit rich phenomena induced by the interplay between localized $f$ orbitals and conduction electrons. However, since the energy scale of the crystal-electric-field splitting is only a few millielectronvolts, the nature of the mobile electrons accompanied by collective crystal-electric-field excitations has not been unveiled. Here, we examine the low-energy electronic structures of CeSb through the anomalous magnetostructural transitions below the N$é$el temperature, $\sim$17 K, termed the 'devil's staircase', using laser angle-resolved photoemission, Raman and neutron scattering spectroscopies. We report another type of electron-boson coupling between mobile electrons and quadrupole crystal-electric-field excitations of the 4$f$ orbitals, which renormalizes the Sb 5$p$ band prominently, yielding a kink at a very low energy ($\sim$7 meV). This coupling strength is strong and exhibits anomalous step-like enhancement during the devil's staircase transition, unveiling a new type of quasiparticle, named the 'multipole polaron', comprising a mobile electron dressed with a cloud of the quadrupole crystal-electric-field polarization.
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Submitted 23 February, 2022; v1 submitted 25 May, 2021;
originally announced May 2021.
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Visualization of the strain-induced topological phase transition in a quasi-one-dimensional superconductor TaSe3
Authors:
Chun Lin,
Masayuki Ochi,
Ryo Noguchi,
Kenta Kuroda,
Masahito Sakoda,
Atsushi Nomura,
Masakatsu Tsubota,
Peng Zhang,
Cedric Bareille,
Kifu Kurokawa,
Yosuke Arai,
Kaishu Kawaguchi,
Hiroaki Tanaka,
Koichiro Yaji,
Ayumi Harasawa,
Makoto Hashimoto,
Donghui Lu,
Shik Shin,
Ryotaro Arita,
Satoshi Tanda,
Takeshi Kondo
Abstract:
Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operat…
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Control of the phase transition from topological to normal insulators can allow for an on/off switching of spin current. While topological phase transitions have been realized by elemental substitution in semiconducting alloys, such an approach requires the preparation of materials with various compositions, thus it is quite far from a feasible device application, which demands a reversible operation. Here we use angle-resolved photoemission spectroscopy (ARPES) and spin-resolved ARPES to visualize the strain-driven band structure evolution of the quasi-1D superconductor TaSe3. We demonstrate that it undergoes reversible strain-induced topological phase transitions from a strong topological insulator phase with spin-polarized, quasi-1D topological surface states, to topologically trivial semimetal and band insulating phases. The quasi-1D superconductor TaSe3 provides a suitable platform for engineering the topological spintronics, for example as an on/off switch for spin current robust against impurity scattering.
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Submitted 16 June, 2021; v1 submitted 14 September, 2020;
originally announced September 2020.
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Observation of small Fermi pockets protected by clean CuO2 sheets of a high-Tc superconductor
Authors:
So Kunisada,
Shunsuke Isono,
Yoshimitsu Kohama,
Shiro Sakai,
Cedric Bareille,
Shunsuke Sakuragi,
Ryo Noguchi,
Kifu Kurokawa,
Kenta Kuroda,
Yukiaki Ishida,
Shintaro Adachi,
Ryotaro Sekine,
Timur K. Kim,
Cephise Cacho,
Shik Shin,
Takami Tohyama,
Kazuyasu Tokiwa,
Takeshi Kondo
Abstract:
The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-doping to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott phys…
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The superconductivity of high transition temperature (Tc) occurs in copper oxides with carrier-doping to an antiferromagnetic (AF) Mott insulator. This discovery more than thirty years ago immediately led to a prediction about the formation of a small Fermi pocket. This structure, however, has not yet been detected, while it could be a key element in relating high-Tc superconductivity to Mott physics. To address this long-standing issue, we investigate the electronic structure of a five-layered Ba2Ca4Cu5O10(F,O)2 with inner CuO2 planes demonstrated to be cleanest ever in cuprates. Most surprisingly, we find small Fermi surface (FS) pockets closed around (pi/2,pi/2) consistently by angle-resolved photoemission spectroscopy (ARPES) and quantum oscillation measurements. The d-wave superconducting gap opens along the pocket, revealing the coexistence between the superconductivity and AF order in the same CuO2 sheet. Our data further indicate that the superconductivity can occur without contribution from the states near the antinodal region, which are shared by other competing excitations such as the charge density wave (CDW) and pseudogap states. This will have significant implications for understanding the superconductivity and puzzling Fermi arc phenomena in cuprates.
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Submitted 18 August, 2020;
originally announced August 2020.
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Material design with the van der Waals stacking of bismuth-halide chains realizing a higher-order topological insulator
Authors:
Ryo Noguchi,
Masaru Kobayashi,
Zhanzhi Jiang,
Kenta Kuroda,
Takanari Takahashi,
Zifan Xu,
Daehun Lee,
Motoaki Hirayama,
Masayuki Ochi,
Tetsuroh Shirasawa,
Peng Zhang,
Chun Lin,
Cédric Bareille,
Shunsuke Sakuragi,
Hiroaki Tanaka,
So Kunisada,
Kifu Kurokawa,
Koichiro Yaji,
Ayumi Harasawa,
Viktor Kandyba,
Alessio Giampietri,
Alexei Barinov,
Timur K. Kim,
Cephise Cacho,
Makoto Hashimoto
, et al. (6 additional authors not shown)
Abstract:
The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingl…
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The van der Waals (vdW) materials with low dimensions have been extensively studied as a platform to generate exotic quantum properties. Advancing this view, a great deal of attention is currently paid to topological quantum materials with vdW structures. Here, we provide a new concept of designing topological materials by the vdW stacking of quantum spin Hall insulators (QSHIs). Most interestingly, a slight shift of inversion center in the unit cell caused by a modification of stacking is found to induce the topological variation from a trivial insulator to a higher-order topological insulator (HOTI). Based on that, we present the first experimental realization of a HOTI by investigating a bismuth bromide Bi4Br4 with angle-resolved photoemission spectroscopy (ARPES). The unique feature in bismuth halides capable of selecting various topology only by differently stacking chains, combined with the great advantage of the vdW structure, offers a fascinating playground for engineering topologically non-trivial edge-states toward future spintronics applications.
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Submitted 10 February, 2021; v1 submitted 4 February, 2020;
originally announced February 2020.
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Spintronic superconductor in a bulk layered material with natural spin-valve structure
Authors:
Shunsuke Sakuragi,
S. Sasaki,
R. Akashi,
R. Sakagami,
K. Kuroda,
C. Bareille,
T. Hashimoto,
T. Nagashima,
Y. Kinoshita,
Y. Hirata,
M. Shimozawa,
S. Asai,
T. Yajima,
S. Doi,
N. Tsujimoto,
S. Kunisada,
R. Noguchi,
K. Kurokawa,
N. Azuma,
K. Hirata,
Y. Yamasaki,
H. Nakao,
T. K. Kim,
C. Cacho,
T. Masuda
, et al. (7 additional authors not shown)
Abstract:
Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties…
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Multi-layered materials provide fascinating platforms to realize various functional properties, possibly leading to future electronic devices controlled by external fields. In particular, layered magnets coupled with conducting layers have been extensively studied recently for possible control of their transport properties via the spin structure. Successful control of quantum-transport properties in the materials with antiferromagnetic (AFM) layers, so-called natural spin-valve structure, has been reported for the Dirac Fermion and topological/axion materials. However, a bulk crystal in which magnetic and superconducting layers are alternately stacked has not been realized until now, and the search for functional properties in it is an interesting yet unexplored field in material science. Here, we discover superconductivity providing such an ideal platform in EuSn2As2 with the van der Waals stacking of magnetic Eu layers and superconducting Sn-As layers, and present the first demonstration of a natural spin-valve effect on the superconducting current. Below the superconducting transition temperature (Tc), the electrical resistivity becomes zero in the in-plane direction. In contrast, it, surprisingly, remains finite down to the lowest temperature in the out-of-plane direction, mostly due to the structure of intrinsic magnetic Josephson junctions in EuSn2As2. The magnetic order of the Eu layers (or natural spin-valve) is observed to be extremely soft, allowing one to easy control of the out-of-plane to in-plane resistivities ratio from 1 to infinity by weak external magnetic fields. The concept of multi-functional materials with stacked magnetic-superconducting layers will open a new pathway to develop novel spintronic devices with magnetically controllable superconductivity.
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Submitted 22 January, 2020;
originally announced January 2020.
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Some properties of quantum reiliablity function for quantum communication channel
Authors:
K. Kurokawa,
M. Sasaki,
M. Osaki,
O. Hirota
Abstract:
This paper presents some examples of quantum reliability function for the quantum communication system in which classical information is transmitted by quantum states. In addition, the quantum Cut off rate is defined. They will be compared with Gallager's reliability function for the same system.
This paper presents some examples of quantum reliability function for the quantum communication system in which classical information is transmitted by quantum states. In addition, the quantum Cut off rate is defined. They will be compared with Gallager's reliability function for the same system.
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Submitted 21 June, 1997; v1 submitted 20 June, 1997;
originally announced June 1997.
