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Distributed Quantum Computing in Silicon
Authors:
Photonic Inc,
:,
Francis Afzal,
Mohsen Akhlaghi,
Stefanie J. Beale,
Olinka Bedroya,
Kristin Bell,
Laurent Bergeron,
Kent Bonsma-Fisher,
Polina Bychkova,
Zachary M. E. Chaisson,
Camille Chartrand,
Chloe Clear,
Adam Darcie,
Adam DeAbreu,
Colby DeLisle,
Lesley A. Duncan,
Chad Dundas Smith,
John Dunn,
Amir Ebrahimi,
Nathan Evetts,
Daker Fernandes Pinheiro,
Patricio Fuentes,
Tristen Georgiou,
Biswarup Guha
, et al. (47 additional authors not shown)
Abstract:
Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors con…
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Commercially impactful quantum algorithms such as quantum chemistry and Shor's algorithm require a number of qubits and gates far beyond the capacity of any existing quantum processor. Distributed architectures, which scale horizontally by networking modules, provide a route to commercial utility and will eventually surpass the capability of any single quantum computing module. Such processors consume remote entanglement distributed between modules to realize distributed quantum logic. Networked quantum computers will therefore require the capability to rapidly distribute high fidelity entanglement between modules. Here we present preliminary demonstrations of some key distributed quantum computing protocols on silicon T centres in isotopically-enriched silicon. We demonstrate the distribution of entanglement between modules and consume it to apply a teleported gate sequence, establishing a proof-of-concept for T centres as a distributed quantum computing and networking platform.
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Submitted 3 June, 2024;
originally announced June 2024.
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Waveguide-integrated silicon T centres
Authors:
A. DeAbreu,
C. Bowness,
A. Alizadeh,
C. Chartrand,
N. A. Brunelle,
E. R. MacQuarrie,
N. R. Lee-Hone,
M. Ruether,
M. Kazemi,
A. T. K. Kurkjian,
S. Roorda,
N. V. Abrosimov,
H. -J. Pohl,
M. L. W. Thewalt,
D. B. Higginbottom,
S. Simmons
Abstract:
The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects o…
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The performance of modular, networked quantum technologies will be strongly dependent upon the quality of their quantum light-matter interconnects. Solid-state colour centres, and in particular T centres in silicon, offer competitive technological and commercial advantages as the basis for quantum networking technologies and distributed quantum computing. These newly rediscovered silicon defects offer direct telecommunications-band photonic emission, long-lived electron and nuclear spin qubits, and proven native integration into industry-standard, CMOS-compatible, silicon-on-insulator (SOI) photonic chips at scale. Here we demonstrate further levels of integration by characterizing T centre spin ensembles in single-mode waveguides in SOI. In addition to measuring long spin T_1 times, we report on the integrated centres' optical properties. We find that the narrow homogeneous linewidth of these waveguide-integrated emitters is already sufficiently low to predict the future success of remote spin-entangling protocols with only modest cavity Purcell enhancements. We show that further improvements may still be possible by measuring nearly lifetime-limited homogeneous linewidths in isotopically pure bulk crystals. In each case the measured linewidths are more than an order of magnitude lower than previously reported and further support the view that high-performance, large-scale distributed quantum technologies based upon T centres in silicon may be attainable in the near term.
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Submitted 28 September, 2022;
originally announced September 2022.
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First application of Markov Chain Monte Carlo-based Bayesian data analysis to the Doppler-Shift Attenuation Method
Authors:
L. J. Sun,
C. Fry,
B. Davids,
N. Esker,
C. Wrede,
M. Alcorta,
S. Bhattacharjee,
M. Bowry,
B. A. Brown,
T. Budner,
R. Caballero-Folch,
L. Evitts,
M. Friedman,
A. B. Garnsworthy,
B. E. Glassman,
G. Hackman,
J. Henderson,
O. S. Kirsebom,
A. Kurkjian,
J. Lighthall,
P. Machule,
J. Measures,
M. Moukaddam,
J. Park,
C. Pearson
, et al. (9 additional authors not shown)
Abstract:
Motivated primarily by the large uncertainties in the thermonuclear rate of the $^{30}$P$(p,γ)^{31}$S reaction that limit our understanding of classical novae, we carried out lifetime measurements of $^{31}$S excited states using the Doppler Shift Lifetimes (DSL) facility at the TRIUMF Isotope Separator and Accelerator (ISAC-II) facility. The $^{31}$S excited states were populated by the $^{3}$He…
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Motivated primarily by the large uncertainties in the thermonuclear rate of the $^{30}$P$(p,γ)^{31}$S reaction that limit our understanding of classical novae, we carried out lifetime measurements of $^{31}$S excited states using the Doppler Shift Lifetimes (DSL) facility at the TRIUMF Isotope Separator and Accelerator (ISAC-II) facility. The $^{31}$S excited states were populated by the $^{3}$He$(^{32}$S$,α)^{31}$S reaction. The deexcitation $γ$ rays were detected by a clover-type high-purity germanium detector in coincidence with the $α$ particles detected by a silicon detector telescope. We have applied modern Markov chain Monte Carlo-based Bayesian methods to perform lineshape analyses of Doppler-shift attenuation method $γ$-ray data for the first time. We have determined the lifetimes of the two lowest-lying $^{31}$S excited states. First experimental upper limits on the lifetimes of four higher-lying states have been obtained. The experimental results were compared to shell-model calculations using five universal $sd$-shell Hamiltonians. Evidence for $γ$ rays originating from the astrophysically important $J^π=3/2^+$, 260-keV $^{30}$P$(p,γ)^{31}$S resonance has also been observed, although strong constraints on the lifetime will require better statistics.
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Submitted 9 November, 2022; v1 submitted 19 March, 2022;
originally announced March 2022.
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Optical observation of single spins in silicon
Authors:
A. T. K. Kurkjian,
D. B. Higginbottom,
C. Chartrand,
E. R. MacQuarrie,
J. R. Klein,
N. R. Lee-Hone,
J. Stacho,
C. Bowness,
L. Bergeron,
A. DeAbreu,
N. A. Brunelle,
S. R. Harrigan,
J. Kanaganayagam,
M. Kazemi,
D. W. Marsden,
T. S. Richards,
L. A. Stott,
S. Roorda,
K. J. Morse,
M. L. W. Thewalt,
S. Simmons
Abstract:
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advan…
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The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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Submitted 12 March, 2021;
originally announced March 2021.
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Characterization of the T center in $^{28}$Si
Authors:
L. Bergeron,
C. Chartrand,
A. T. K. Kurkjian,
K. J. Morse,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. L. W. Thewalt,
S. Simmons
Abstract:
Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, altho…
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Silicon is host to two separate leading quantum technology platforms: integrated silicon photonics as well as long-lived spin qubits. There is an ongoing search for the ideal photon-spin interface able to hybridize these two approaches into a single silicon platform offering substantially expanded capabilities. A number of silicon defects are known to have spin-selective optical transitions, although very few of these are known to be in the highly desirable telecommunications bands, and those that do often do not couple strongly to light. Here we characterize the T center in silicon, a highly stable silicon defect which supports a short-lived bound exciton that upon recombination emits light in the telecommunications O-band. In this first study of T centers in $^{28}$Si, we present the temperature dependence of the zero phonon line, report ensemble zero phonon linewidths as narrow as 33(2) MHz, and elucidate the excited state spectrum of the bound exciton. Magneto-photoluminescence, in conjunction with magnetic resonance, is used to observe twelve distinct orientational subsets of the T center, which are independently addressable due to the anisotropic g factor of the bound exciton's hole spin. The T center is thus a promising contender for the hybridization of silicon's two leading quantum technology platforms.
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Submitted 15 June, 2020;
originally announced June 2020.
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A silicon-integrated telecom photon-spin interface
Authors:
L. Bergeron,
C. Chartrand,
A. T. K. Kurkjian,
K. J. Morse,
H. Riemann,
N. V. Abrosimov,
P. Becker,
H. -J. Pohl,
M. L. W. Thewalt,
S. Simmons
Abstract:
Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon d…
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Long-distance entanglement distribution is a vital capability for quantum technologies. An outstanding practical milestone towards this aim is the identification of a suitable matter-photon interface which possesses, simultaneously, long coherence lifetimes and efficient telecommunications-band optical access. In this work, alongside its sister publication, we report upon the T center, a silicon defect with spin-selective optical transitions at 1326 nm in the telecommunications O-band. Here we show that the T center in $^{28}$Si offers electron and nuclear spin lifetimes beyond a millisecond and second respectively, as well as optical lifetimes of 0.94(1) $μ$s and a Debye-Waller factor of 0.23(1). This work represents a significant step towards coherent photonic interconnects between long-lived silicon spins, spin-entangled telecom single-photon emitters, and spin-dependent silicon-integrated photonic nonlinearities for future global quantum technologies.
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Submitted 15 June, 2020;
originally announced June 2020.
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Isospin symmetry in $B(E2)$ values: Coulomb excitation study of ${}^{21}$Mg
Authors:
P. Ruotsalainen,
J. Henderson,
G. Hackman,
G. H. Sargsyan,
K. D. Launey,
A. Saxena,
P. C. Srivastava,
S. R. Stroberg,
T. Grahn,
J. Pakarinen,
G. C. Ball,
R. Julin,
P. T. Greenlees,
J. Smallcombe,
C. Andreoiu,
N. Bernier,
M. Bowry,
M. Buckner,
R. Caballero-Folch,
A. Chester,
S. Cruz,
L. J. Evitts,
R. Frederick,
A. B. Garnsworthy,
M. Holl
, et al. (15 additional authors not shown)
Abstract:
The $T_z$~=~$-\frac{3}{2}$ nucleus ${}^{21}$Mg has been studied by Coulomb excitation on ${}^{196}$Pt and ${}^{110}$Pd targets. A 205.6(1)-keV $γ$-ray transition resulting from the Coulomb excitation of the $\frac{5}{2}^+$ ground state to the first excited $\frac{1}{2}^+$ state in ${}^{21}$Mg was observed for the first time. Coulomb excitation cross-section measurements with both targets and a mea…
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The $T_z$~=~$-\frac{3}{2}$ nucleus ${}^{21}$Mg has been studied by Coulomb excitation on ${}^{196}$Pt and ${}^{110}$Pd targets. A 205.6(1)-keV $γ$-ray transition resulting from the Coulomb excitation of the $\frac{5}{2}^+$ ground state to the first excited $\frac{1}{2}^+$ state in ${}^{21}$Mg was observed for the first time. Coulomb excitation cross-section measurements with both targets and a measurement of the half-life of the $\frac{1}{2}^+$ state yield an adopted value of $B(E2;\frac{5}{2}^+\rightarrow\frac{1}{2}^+)$~=~13.3(4)~W.u. A new excited state at 1672(1)~keV with tentative $\frac{9}{2}^+$ assignment was also identified in ${}^{21}$Mg. This work demonstrates large difference of the $B(E2;\frac{5}{2}^+\rightarrow\frac{1}{2}^+)$ values between $T$~=~$\frac{3}{2}$, $A$~=~21 mirror nuclei. The difference is investigated in the shell-model framework employing both isospin conserving and breaking USD interactions and using modern \textsl{ab initio} nuclear structure calculations, which have recently become applicable in the $sd$ shell.
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Submitted 6 May, 2019; v1 submitted 2 November, 2018;
originally announced November 2018.
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In-beam internal conversion electron spectroscopy with the SPICE detector
Authors:
M. Moukaddam,
J. Smallcombe,
L. J. Evitts,
A. B. Garnsworthy,
C. Andreoiu,
G. C. Ball,
J. Berean-Dutcher,
D. Bishop,
C. Bolton,
R. Caballero-Folch,
M. Constable,
D. S. Cross,
T. E. Drake,
R. Dunlop,
P. E. Garrett,
S. Georges,
G. Hackman,
S. Hallam,
J. Henderson,
R. Henderson,
R. Krücken,
L. Kurchaninov,
A. Kurkjian,
B. Olaizola,
E. O'Sullivan
, et al. (14 additional authors not shown)
Abstract:
The SPectrometer for Internal Conversion Electrons (SPICE) has been commissioned for use in conjunction with the TIGRESS $γ$-ray spectrometer at TRIUMF's ISAC-II facility. SPICE features a permanent rare-earth magnetic lens to collect and direct internal conversion electrons emitted from nuclear reactions to a thick, highly segmented, lithium-drifted silicon detector. This arrangement, combined wi…
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The SPectrometer for Internal Conversion Electrons (SPICE) has been commissioned for use in conjunction with the TIGRESS $γ$-ray spectrometer at TRIUMF's ISAC-II facility. SPICE features a permanent rare-earth magnetic lens to collect and direct internal conversion electrons emitted from nuclear reactions to a thick, highly segmented, lithium-drifted silicon detector. This arrangement, combined with TIGRESS, enables in-beam $γ$-ray and internal conversion electron spectroscopy to be performed with stable and radioactive ion beams. Technical aspects of the device, capabilities, and initial performance are presented.
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Submitted 8 August, 2018;
originally announced August 2018.
