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Influence of pore-confined water on the thermal expansion of a zinc-based metal-organic framework
Authors:
Nina Strasser,
Benedikt Schrode,
Ana Torvisco,
Sanjay John,
Birgit Kunert,
Brigitte Bitschnau,
Florian Patrick Lindner,
Christian Slugovc,
Egbert Zojer,
Roland Resel
Abstract:
Understanding the reversible intercalation of guest molecules into metal-organic frameworks is crucial for advancing their design for practical applications. In this work, we explore the impact of H$_{\mathrm{2}}\!$O as a guest molecule on the thermal expansion of the zinc-based metal-organic framework GUT-2. Dehydration is achieved by thermal treatment of hydrated GUT-2. Rietveld refinement perfo…
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Understanding the reversible intercalation of guest molecules into metal-organic frameworks is crucial for advancing their design for practical applications. In this work, we explore the impact of H$_{\mathrm{2}}\!$O as a guest molecule on the thermal expansion of the zinc-based metal-organic framework GUT-2. Dehydration is achieved by thermal treatment of hydrated GUT-2. Rietveld refinement performed on temperature-dependent X-ray powder diffraction data confirms the reversible structural transformation. Additionally, it allows the determination of anisotropic thermal expansion coefficients for both phases. The hydrated form exhibits near-zero thermal expansion along the polymer chain direction, moderate expansion In the direction of predominantly hydrogen bonds, and the highest expansion in the direction with only Van der Waals bonding. Upon activation, the removal of H$_{\mathrm{2}}\!$O molecules triggers a doubling of the thermal expansion coefficient in the direction, where the hydrogen bonds have been removed. Regarding the dynamics of the process, thermal activation in air occurs within 6 hours at a temperature of 50°C and takes only 30 minutes when heating to 90°C. In contrast, full rehydration under standard lab conditions (30 % relative humidity) requires two days. During the activation/dehydration processes no change of the widths of the X-ray diffraction peaks is observed, which shows that the underlying crystal structures remains fully intact during the transition processes. Fitting the transformations by the Avrami equation reveals a quasi one-dimensional evolution of the dehydrated areas for the activation process and a more intricate, predominantly two-dimensional mechanism for the rehydration.
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Submitted 7 April, 2025;
originally announced April 2025.
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GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line
Authors:
Yannick De Koninck,
Charles Caer,
Didit Yudistira,
Marina Baryshnikova,
Huseyin Sar,
Ping-Yi Hsieh,
Saroj Kanta Patra,
Nadezda Kuznetsova,
Davide Colucci,
Alexey Milenin,
Andualem Ali Yimam,
Geert Morthier,
Dries Van Thourhout,
Peter Verheyen,
Marianna Pantouvaki,
Bernardette Kunert,
Joris Van Campenhout
Abstract:
Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integratio…
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Silicon photonics is a rapidly developing technology that promises to revolutionize the way we communicate, compute, and sense the world. However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite significant progress in hybrid and heterogeneous integration of III-V light sources on silicon, monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the first electrically driven GaAs-based multi-quantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line. GaAs nano-ridge waveguides with embedded p-i-n diodes, InGaAs quantum wells and InGaP passivation layers are grown with high quality at wafer scale, leveraging selective-area epitaxy with aspect-ratio trapping. After III-V facet patterning and standard CMOS contact metallization, room-temperature continuous-wave lasing is demonstrated at wavelengths around 1020 nm in more than three hundred devices across a wafer, with threshold currents as low as 5 mA, output powers beyond 1 mW, laser linewidths down to 46 MHz, and laser operation up to 55 °C. These results illustrate the potential of the III-V/Si nano-ridge engineering concept for the monolithic integration of laser diodes in a Si photonics platform, enabling future cost-sensitive high-volume applications in optical sensing, interconnects and beyond.
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Submitted 20 July, 2023;
originally announced September 2023.
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Characterization of Surface and Structure of in-situ Doped Sol-Gel-Derived Silicon Carbide
Authors:
Olivia Kettner,
Sanja Simic,
Birgit Kunert,
Robert Schennach,
Roland Resel,
Thomas Griesser,
Bettina Friedel
Abstract:
Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with control over defects and surface is challenging. Sol-gel based techniques are an affordable alternative towards such requirements. This report describes two types…
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Silicon carbide (SiC), is an artificial semiconductor used for high-power transistors and blue LEDs, for its extraordinary properties. SiC would be attractive for more applications, but large-scale or large-surface area fabrication, with control over defects and surface is challenging. Sol-gel based techniques are an affordable alternative towards such requirements. This report describes two types of microcrystalline SiC derived after carbothermal reduction from sol-gel-based precursors, one with nitrogen added, the other aluminum. Characterization of their bulk, structure and surface shows that incorporation of dopants affects the formation of polytypes and surface chemistry. Nitrogen leads exclusively to cubic SiC, exhibiting a native oxide surface. Presence of aluminum instead promotes growth of hexagonal polytypes and induces self-passivation of the crystallites surface during growth. This is established by hydrogenation of silicon bonds and formation of a protecting aluminum carbonate species. XPS provides support for the suggested mechanism. This passivation is achieved in only one step, solely by aluminium in the precursor. Hence, it is shown that growth, doping and passivation of SiC can be performed as one-pot synthesis. Material without insulating oxide and a limited number of defects is highly valuable for applications involving surface-sensitive charge-transfer reactions, therefore the potential of this method is significant.
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Submitted 24 June, 2019;
originally announced June 2019.
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Cu$_2$O Microcrystals Grown on Silicon as Platform for Quantum-Degenerate Excitons and Rydberg States
Authors:
Stephan Steinhauer,
Marijn A. M. Versteegh,
André Mysyrowicz,
Birgit Kunert,
Val Zwiller
Abstract:
Cuprous oxide (Cu$_2$O) is a semiconductor with large exciton binding energy and significant technological importance in applications such as photovoltaics and solar water splitting. It is also a superior material system for quantum optics that enabled the observation of two intriguing phenomena, i.e. Rydberg excitons as solid-state analogue to highly-excited atomic states and dense exciton gases…
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Cuprous oxide (Cu$_2$O) is a semiconductor with large exciton binding energy and significant technological importance in applications such as photovoltaics and solar water splitting. It is also a superior material system for quantum optics that enabled the observation of two intriguing phenomena, i.e. Rydberg excitons as solid-state analogue to highly-excited atomic states and dense exciton gases showing quantum degeneracy when approaching the phase transition to Bose-Einstein condensation. Previous experiments focused on natural bulk crystals due to major difficulties in growing high-quality synthetic samples. Here, we present Cu$_2$O microcrystals with excellent optical material quality capable of hosting both quantum-degenerate excitons and excited Rydberg states. Growth of Cu$_2$O with exceedingly low point defect levels was achieved on silicon by a scalable thermal oxidation process compatible with lithographic patterning. Using the latter, we demonstrate Rydberg excitons in site-controlled Cu$_2$O microstructures, paving the way for a plethora of applications in integrated quantum photonics.
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Submitted 5 February, 2019;
originally announced February 2019.
