Showing 1–15 of 15 results for author: Kulbachinskii, V A

Nematic properties of FeSe$_{1-x}$Te$_{x}$ crystals with a low Te content

Authors: Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii, V. G. Kytin, D. E. Presnov, Y. Skourski, L. V. Shvanskaya, O. S. Volkova, D. V. Efremov, A. N. Vasiliev

Abstract: We report on the synthesis and physical properties of FeSe$_{1-x}$Te$_x$ single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially suppresses superconductivity. Resistivity and Hall effect measurements indicate weak anomalies at elevated temperatures ascribed to nematic transitions. A quasi-classical analysis of transport data, including in a pulse… ▽ More We report on the synthesis and physical properties of FeSe$_{1-x}$Te$_x$ single crystals with a low Te content (x = 0.17, 0.21, 0.25), where the replacement of Se with Te partially suppresses superconductivity. Resistivity and Hall effect measurements indicate weak anomalies at elevated temperatures ascribed to nematic transitions. A quasi-classical analysis of transport data, including in a pulsed magnetic field of up to 25 T, confirms the inversion of majority carriers type from holes in FeSe to electrons in FeSe$_{1-x}$Te$_x$ at x $>$ 0.17. The temperature-dependent term in the elastoresistance of the studied compositions has a negative sign, which means that for substituted FeSe compositions, the elastoresistance is positive for hole-doped materials and negative for electron-doped materials just like in semiconductors such as silicon and germanium. △ Less

Submitted 2 September, 2019; originally announced September 2019.

Majority carrier type inversion in FeSe family and "doped semimetal" scheme in iron-based superconductors

Authors: Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii, V. G. Kytin, S. V. Mishkov, D. E. Presnov, O. S. Volkova, A. N. Vasiliev

Abstract: The field and temperature dependencies of the longitudinal and Hall resistivity have been studied for high-quality FeSe${}_{1-x}$S${}_{x}$ (x up to 0.14) single crystals. Quasiclassical analysis of the obtained data indicates a strong variation of the electron and hole concentrations under the studied isovalent substitution and proximity of FeSe to the point of the majority carrier-type inversion.… ▽ More The field and temperature dependencies of the longitudinal and Hall resistivity have been studied for high-quality FeSe${}_{1-x}$S${}_{x}$ (x up to 0.14) single crystals. Quasiclassical analysis of the obtained data indicates a strong variation of the electron and hole concentrations under the studied isovalent substitution and proximity of FeSe to the point of the majority carrier-type inversion. On this basis, we propose a `doped semimetal' scheme for the superconducting phase diagram of the FeSe family, which can be applied to other iron-based superconductors. In this scheme, the two local maxima of the superconducting temperature can be associated with the Van Hove singularities of a simplified semi-metallic electronic structure. The multicarrier analysis of the experimental data also reveals the presence of a tiny and highly mobile electron band for all the samples studied. Sulfur substitution in the studied range leads to a decrease in the number of mobile electrons by more than ten times, from about 3\% to about 0.2\%. This behavior may indicate a successive change of the Fermi level position relative to singular points of the electronic structure which is consistent with the `doped semimetal' scheme. The scattering time for mobile carriers does not depend on impurities, which allows us to consider this group as a possible source of unusual acoustic properties of FeSe. △ Less

Submitted 6 December, 2018; v1 submitted 10 August, 2018; originally announced August 2018.

Journal ref: Ovchenkov et al 2019 Supercond. Sci. Technol. https://doi.org/10.1088/1361-6668/ab1387

Reduction of the electrodynamics of superconductors to those for conductors with the incorporation of spatial dispersion

Authors: M. A. Dresvyannikov, A. P. Chernyaev, A. L. Karuzskii, V. A. Kulbachinskii, Yu. A. Mityagin, A. V. Perestoronin, N. A. Volchkov

Abstract: We derive general frequency dependencies of the surface impedance modulus for conductors without the dc dissipation, i. e. for superconductors or perfect conductors. The frequency-dependent surface impedance was applied for the solutions corresponding to the spatially dispersive eigenvalues of the permittivity operator for conductors. We demonstrate that appropriately taken into account effects of… ▽ More We derive general frequency dependencies of the surface impedance modulus for conductors without the dc dissipation, i. e. for superconductors or perfect conductors. The frequency-dependent surface impedance was applied for the solutions corresponding to the spatially dispersive eigenvalues of the permittivity operator for conductors. We demonstrate that appropriately taken into account effects of the spatial dispersion can give the general frequency dependence of the surface impedance for the obtained solutions including that for superconductor. It is shown that an incorporation of the spatial dispersion leads to an appearance of the Meissner effect in perfect conductors in the same manner as in superconductors. △ Less

Submitted 24 September, 2020; v1 submitted 29 March, 2018; originally announced March 2018.

Comments: The new version differs significantly from the previous version arXiv:1803.11201. The text of the new article incorporates important principal additions that take into account the comments and discussions with colleagues. As an illustrative example the strongly extended detailed Introduction section may be considered, as well as the expanded list of references

Magnetotransport properties of FeSe in fields up to 50T

Authors: Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii, V. G. Kytin, D. E. Presnov, Y. Skourski, O. S. Volkova, A. N. Vasiliev

Abstract: Magnetotransport properties of the high-quality FeSe crystal, measured in a wide temperature range and in magnetic fields up to 50 T, show the symmetry of the main holelike and electronlike bands in this compound. In addition to the main two bands, there is also a tiny, highly mobile, electronlike band which is responsible for the non-linear behavior of $ρ_{xy}$(B) at low temperatures and some oth… ▽ More Magnetotransport properties of the high-quality FeSe crystal, measured in a wide temperature range and in magnetic fields up to 50 T, show the symmetry of the main holelike and electronlike bands in this compound. In addition to the main two bands, there is also a tiny, highly mobile, electronlike band which is responsible for the non-linear behavior of $ρ_{xy}$(B) at low temperatures and some other peculiarities of FeSe. We observe the inversion of the $ρ_{xx}$ temperature coeficient at a magnetic field higher than about 20 T which is an implicit conformation of the electron-hole symmetry in the main bands. △ Less

Submitted 3 July, 2017; originally announced July 2017.

Comments: MISM 2017

Highly mobile carriers in orthorhombic phases of iron-based superconductors FeSe${}_{1-x}$S${}_{x}$

Authors: Y. A. Ovchenkov, D. A. Chareev, V. A. Kulbachinskii, V. G. Kytin, D. E. Presnov, O. S. Volkova, A. N. Vasiliev

Abstract: The field and temperature dependencies of the longitudinal and Hall resistivity have been measured for FeSe${}_{1-x}$S${}_{x}$ (x=0.04, 0.09 and 0.19) single crystals. The sample FeSe${}_{0.81}$S${}_{0.19}$ does not show a transition to an orthorhombic phase and exhibits at low temperatures the transport properties quite different from those of orthorhombic samples. The behavior of FeSe… ▽ More The field and temperature dependencies of the longitudinal and Hall resistivity have been measured for FeSe${}_{1-x}$S${}_{x}$ (x=0.04, 0.09 and 0.19) single crystals. The sample FeSe${}_{0.81}$S${}_{0.19}$ does not show a transition to an orthorhombic phase and exhibits at low temperatures the transport properties quite different from those of orthorhombic samples. The behavior of FeSe${}_{0.81}$S${}_{0.19}$ is well described by the simple two band model with comparable values of hole and electron mobility. In particular, at low temperatures the transverse resistance shows a linear field dependence, the magnetoresistance follow a quadratic field dependence and obeys to Kohler's rule. In contrast, Kohler's rule is strongly violated for samples having an orthorhombic low temperature structure. However, the transport properties of the orthorhombic samples can be satisfactory described by the three band model with the pair of almost equivalent to the tetragonal sample hole and electron bands, supplemented with the highly mobile electron band which has two order smaller carrier number. Therefore, the peculiarity of the low temperature transport properties of the orthorhombic Fe(SeS) samples, as probably of many other orthorhombic iron superconductors, is due to the presence of a small number of highly mobile carriers which originate from the local regions of the Fermi surface, presumably, nearby the Van Hove singularity points. △ Less

Submitted 18 August, 2016; v1 submitted 19 July, 2016; originally announced July 2016.

Journal ref: 2017 Supercond. Sci. Technol 30, 035017

Tuning of thermoelectric properties with changing Se content in Sb2Te3

Authors: Diptasikha Das, K. Malik, A. K. Deb, V. A. Kulbachinskii, V. G. Kytin, S. Chatterjee, D. Das, S. Dhara, S. Bandyopadhyay, Aritra Banerjee

Abstract: Polycrystalline Sb 2 Te 3-x Se x (0.0 < x < 1.0) samples were synthesized by the solid state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess the Rhombohedral crystal symmetry (space group R 3 m ). Increase of Se content increases the resistivity of the samples. Variation of phonon frequencies, observed from Raman spectroscopic study,… ▽ More Polycrystalline Sb 2 Te 3-x Se x (0.0 < x < 1.0) samples were synthesized by the solid state reaction method. The structural analysis showed that up to the maximal concentration of Se, the samples possess the Rhombohedral crystal symmetry (space group R 3 m ). Increase of Se content increases the resistivity of the samples. Variation of phonon frequencies, observed from Raman spectroscopic study, depict anomalous behaviour around x = 0.2. The sample Sb 2 Te 2.8 Se 0.2 also shows maximum Seebeck coefficient, carrier concentration and thermoelectric power factor. Nature of scattering mechanism controlling the thermopower data has been explored. The thermoelectric properties of the synthesized materials have been analyzed theoretically in the frame of Boltzmann equation approach. △ Less

Submitted 7 March, 2016; originally announced March 2016.

Comments: Accepted for publication in Europhysics Letters

Interplay between disorder and inversion symmetry: Extreme enhancement of the mobility near the Weyl point in BiTeI

Authors: M. Sasaki, Kyoung-Min Kim, A. Ohnishi, M. Kitaura, N. Tomita, V. A. Kulbachinskii, Ki-Seok Kim, Heon-Jung Kim

Abstract: We show experimental and theoretical evidence that BiTeI hosts a novel disordered metallic state named diffusive helical Fermi liquid (DHFL), characterized by a pair of concentric spin-chiral Fermi surfaces with negligible inter-valley scattering. Key experimental observations are extreme disparity of the mobility between inner and outer helical Fermi surfaces near the Weyl point and existence of… ▽ More We show experimental and theoretical evidence that BiTeI hosts a novel disordered metallic state named diffusive helical Fermi liquid (DHFL), characterized by a pair of concentric spin-chiral Fermi surfaces with negligible inter-valley scattering. Key experimental observations are extreme disparity of the mobility between inner and outer helical Fermi surfaces near the Weyl point and existence of the so called universal scaling behavior for the Hall resistivity. Although the extreme enhancement of the inner-Fermi-surface mobility near the Weyl point is quantitatively explained within the self-consistent Born approximation, the existence of universal scaling in the Hall resistivity shows its breakdown, implying necessity of mass renormalization in the inner Fermi-surface beyond the independent electron picture. △ Less

Submitted 4 November, 2015; originally announced November 2015.

Anomalous Hall effect in a 2D magnetic semiconductor hetereostructure: Evidence of Berry phase effects in the hopping-transport regime

Authors: L. N. Oveshnikov, V. A. Kulbachinskii, A. B. Davydov, B. A. Aronzon, I. V. Rozhansky, N. S. Avkeriev, K. I. Kugel, V. Tripathi

Abstract: The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an… ▽ More The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of experimental data reveals four distinct temperature ranges differing in the behavior of AHE. The Mn layer induces an inhomogeneity of the hole gas leading to an interplay between the hopping and drift conductivities. It is shown that at sufficiently low temperatures, hopping conductivity favors the mechanisms of AHE related to the geometric (Berry-Pancharatnam) phase. △ Less

Submitted 2 July, 2015; originally announced July 2015.

Comments: 5 pages, Revtex4

Journal ref: Scientific Reports 5, Article number: 17158 (2015)

Topological phase transitions driven by magnetic phase transitions in FexBi2Te3 (0 < x < 0.1) single crystals

Authors: Heon-Jung Kim, Ki-Seok Kim, J. -F. Wang, V. A. Kulbachinskii, K. Ogawa, M. Sasaki, A. Ohnishi, M. Kitaura, Y. -Y. Wu, L. Li, I. Yamamoto, J. Azuma, M. Kamada, V. Dobrosavljević

Abstract: We propose a phase diagram for FexBi2Te3 (0 < x < 0.1) single crystals, which belong to a class of magnetically bulk-doped topological insulators. The evolution of magnetic correlations from ferromagnetic- to antiferromagnetic- gives rise to topological phase transitions, where the paramagnetic topological insulator of Bi2Te3 turns into a band insulator with ferromagnetic-cluster glassy behaviours… ▽ More We propose a phase diagram for FexBi2Te3 (0 < x < 0.1) single crystals, which belong to a class of magnetically bulk-doped topological insulators. The evolution of magnetic correlations from ferromagnetic- to antiferromagnetic- gives rise to topological phase transitions, where the paramagnetic topological insulator of Bi2Te3 turns into a band insulator with ferromagnetic-cluster glassy behaviours around x ~ 0.025, and it further evolves to a topological insulator with valence-bond glassy behaviours, which spans over the region between x ~ 0.03 up to x ~ 0.1. This phase diagram is verified by measuring magnetization, magnetotransport, and angle-resolved photoemission spectra with theoretical discussions. △ Less

Submitted 19 February, 2013; originally announced February 2013.

Comments: To be published in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 110, 136601 (2013)

Effect of hydrogen plasma treatment and oxygen deficiency on conducting properties of In$_2$O$_3$:Sn thin films

Authors: V. G. Kytin, V. A. Kulbachinskii, O. V. Reukova, Y. M. Galperin, T. H. Johansen, S. Diplas, A. G. Ulyashin

Abstract: Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been investigated in the temperature range 1.5-300 K. The observed temperature dependences of resistivity were typical for metallic transport of electrons except temperature de… ▽ More Electrical conductivity, Hall effect and magnetoresistance of In$_2$O$_3$:Sn thin films deposited on a glass substrates at different temperatures and oxygen pressures, as well as the films treated in a hydrogen plasma, have been investigated in the temperature range 1.5-300 K. The observed temperature dependences of resistivity were typical for metallic transport of electrons except temperature dependence of resistivity of the In$_2$O$_3$:Sn film deposited in the oxygen deficient atmosphere. The electron concentration and mobility for the film deposited at 230$^\circ$C was larger than that for the film deposited nominally at room temperature. Short (5 minutes) treatment of the films in hydrogen plasma leads to the enhancement of electrical conductivity while longer (30 minute) treatment has the opposite effect. The electrical measurements were accompanied by AFM and SEM studies of structural properties, as well as by XPS analysis. Basic on structural and electrical measurements we conclude the reduction process initiated by the hydrogen plasma provides essential modification of the ITO films surface. At the same time, electrical properties of the remaining (located beneath the surface layer) parts of the ITO films remain mostly unchangeable. XPS analysis shows that grown in situ oxygen deficient ITO films have enhanced DOS between the Fermi level and the valence band edge. The extra localized states behave as acceptors leading to a compensation of $n$-type ITO. That can explain lower $n$-type conductivity in this material crossing over to a Mott-type hopping. △ Less

Submitted 24 March, 2011; originally announced March 2011.

Comments: Submitted to the Journal of Applied Physics

Electron transport and optical properties of shallow GaAs/InGaAs/GaAs quantum wells with a thin central AlAs barrier

Authors: V. A. Kulbachinskii, I. S. Vasil'evskii, R. A. Lunin, G. Galistu, A. de Visser, G. B. Galiev, S. S. Shirokov, V. G. Mokerov

Abstract: Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extract… ▽ More Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity measurements in the temperature range 4-300 K and magnetotransport in magnetic fields up to 12 T. The (subband) carrier concentrations and mobilities are extracted from the Hall data and Shubnikov-de Haas oscillations. We find that the transport parameters are strongly affected by the insertion of the AlAs central barrier. Photoluminescence spectra, measured at 77 K, show an increase of the transition energies upon insertion of the barrier. The transport and optical data are analyzed with help of self-consistent calculations of the subband structure and envelope wave functions. Insertion of the AlAs central barrier changes the spatial distribution of the electron wave functions and leads to the formation of hybrid states, i.e. states which extend over the InGaAs and the delta-doped layer quantum wells. △ Less

Submitted 12 July, 2006; originally announced July 2006.

Comments: 14 pages, pdf file

Journal ref: Semicond. Sci. and Techn. 22 (2007) 222-228

The effect of carrier density gradients on magnetotransport data measured in Hall bar geometry

Authors: L. A. Ponomarenko, D. T. N. de Lang, A. de Visser, V. A. Kulbachinskii, G. B. Galiev, H. Künzel, A. M. M. Pruisken

Abstract: We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagram… ▽ More We have measured magnetotransport of the two-dimensional electron gas in a Hall bar geometry in the presence of small carrier density gradients. We find that the longitudinal resistances measured at both sides of the Hall bar interchange by reversing the polarity of the magnetic field. We offer a simple explanation for this effect and discuss implications for extracting conductivity flow diagrams of the integer quantum Hall effect. △ Less

Submitted 3 June, 2003; originally announced June 2003.

Comments: 7 pages, 8 figures

Journal ref: Solid State Communications 130 (2004) 705

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Authors: V. A. Kulbachinskii, R. A. Lunin, V. A. Rogozin, V. G. Mokerov, Yu. V. Fedorov, Yu. V. Khabarov, A. de Visser

Abstract: We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potentia… ▽ More We have investigated the optical and transport properties of MBE grown short-period superlattices of InAs/GaAs with different numbers of periods (3 <= N <= 24) and a total thickness 14 nm. Bandstructure calculations show that these superlattices represent a quantum well with average composition In_0.16Ga_0.84As. The electron wave functions are only slightly modulated by the superlattice potential as compared to a single quantum well with the same composition, which was grown as a reference sample. The photoluminescence, the resistance, the Shubnikov-de Haas effect and the Hall effect have been measured as a function of the InAs layer thickness Q in the range 0.33 <= Q <= 2.7 monolayers (ML). The electron densities range from 6.8 to 11.5x10^11 cm^-2 for Q <= 2.0 ML. The photoluminescence and magnetotransport data show that only one subband is occupied. When Q >= 2.7 ML quantum dots are formed and the metallic type of conductivity changes to variable range hopping conductivity. △ Less

Submitted 25 April, 2002; originally announced April 2002.

Comments: 15 pages (incl.7 figures); pdf file; submitted to Semicond. Sci. Technol

Journal ref: Semicond. Sci. Technol. 17 (2002) 947-951.

Wavelength dependent negative and positive persistent photoconductivity in Sn delta-doped GaAs structures

Authors: V. A. Kulbachinskii, V. G. Kytin, A. V. Golikov, R. A. Lunin, R. T. F. van Schaijk, A. de Visser, A. P. Senichkin, A. S. Bugaev

Abstract: The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13… ▽ More The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been determined by magnetoresistance, Shubnikov-de Haas effect and Hall effect measurements, in high magnetic fields. For the heavily doped structures (n_H> 2x10^13 cm^-2) we observe under illumination by light with wavelengths larger than the band-gap wavelength of the host material (lambda= 815 nm at T= 4.2 K) first positive (PPPC) and then negative (NPPC) persistent photoconductivity. The NPPC is attributed to the ionisation of DX centres and PPPC is explained by the excitation of electrons from Cr impurity states in the substrate. For lambda< 815 nm in addition the excitation of electron over the band gap of GaAs contributes to the PPPC. For the lightly doped structures (n_H<= 2x10^13 cm^-2) the photoconductivity effect is always positive. △ Less

Submitted 16 June, 2000; v1 submitted 14 September, 1999; originally announced September 1999.

Comments: 17 pages (includes 6 figures); Postscript file; Semicond. Sci. Technol. in print

Journal ref: Semicond. Sci. Techn. 15 (2000) 895-901.

Sn delta-doping in GaAs

Authors: V. A. Kulbachinskii, V. G. Kytin, R. A. Lunin, A. V. Golikov, V. G. Mokerov, A. S. Bugaev, A. P. Senichkin, R. T. F. van Schaijk, A. de Visser, P. M. Koenraad

Abstract: We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher th… ▽ More We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated. △ Less

Submitted 20 July, 1999; originally announced July 1999.

Comments: 11 pages text (ps), 9 figures (ps), submitted to Semicon. Science Techn

Journal ref: Semicond. Sci. Technol. 14 (1999) 1034-1041.