Electronic structure tunability by periodic meta-ligand spacing in one-dimensional organic semiconductors
Authors:
Ignacio Piquero-Zulaica,
Aran Garcia-Lekue,
Luciano Colazzo,
Claudio K. Krug,
Mohammed S. G. Mohammed,
Zakaria M. Abd El-Fattah,
J. Michael Gottfried,
Dimas G. de Oteyza,
J. Enrique Ortega,
Jorge Lobo-Checa
Abstract:
Designing molecular organic semiconductors with distinct frontier orbitals is key for the development of devices with desirable properties. Generating defined organic nanostructures with atomic precision can be accomplished by on-surface synthesis. We use this dry chemistry to introduce topological variations in a conjugated poly-para-phenylene chain in the form of meta-junctions. As evidenced by…
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Designing molecular organic semiconductors with distinct frontier orbitals is key for the development of devices with desirable properties. Generating defined organic nanostructures with atomic precision can be accomplished by on-surface synthesis. We use this dry chemistry to introduce topological variations in a conjugated poly-para-phenylene chain in the form of meta-junctions. As evidenced by STM and LEED, we produce a macroscopically ordered, monolayer thin zigzag chain film on a vicinal silver crystal. These cross-conjugated nanostructures are expected to display altered electronic properties, which are now unravelled by highly complementary experimental techniques (ARPES and STS) and theoretical calculations (DFT and EPWE). We find that meta-junctions dominate the weakly dispersive band structure, while the bandgap is tunable by altering the linear segment's length. These periodic topology effects induce significant loss of the electronic coupling between neighboring linear segments leading to partial electron confinement in the form of weakly coupled Quantum Dots. Such periodic quantum interference effects determine the overall semiconducting character and functionality of the chains.
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Submitted 1 December, 2020; v1 submitted 5 March, 2020;
originally announced March 2020.
Direct Characterization of Band Bending in GaP/Si(001) Heterostructures with Hard X-ray Photoelectron Spectroscopy
Authors:
Martin Schmid,
Kunie Ishioka,
Andreas Beyer,
Benedikt P. Klein,
Claudio K. Krug,
Malte Sachs,
Hrvoje Petek,
Christopher J. Stanton,
Wolfgang Stolz,
Kerstin Volz,
J. Michael Gottfried,
Ulrich Höfer
Abstract:
We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical model…
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We apply hard X-ray photoelectron spectroscopy (HAXPES) to investigate the electronic structures in ~50-nm thick epitaxial GaP layers grown on Si(001) under different conditions. Depth profiles of the local binding energies for the core levels are obtained by measuring the photoemission spectra at different incident photon energies between 3 and 7 keV and analyzing them with simple numerical models. The obtained depth profiles are in quantitative agreement with the band bending determinations for the same samples in a previous coherent phonon spectroscopic study. Our results demonstrate the applicability of the HAXPES with varying incident photon energy to characterize the electric potential profiles at buried semiconductor heterointerfaces.
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Submitted 11 November, 2016;
originally announced November 2016.
