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Optically detected magnetic resonance of wafer-scale hexagonal boron nitride thin films
Authors:
Sam C. Scholten,
Jakub Iwański,
Kaijian Xing,
Johannes Binder,
Aleksandra K. Dąbrowska,
Hark H. Tan,
Tin S. Cheng,
Jonathan Bradford,
Christopher J. Mellor,
Peter H. Beton,
Sergei V. Novikov,
Jan Mischke,
Sergej Pasko,
Emre Yengel,
Alexander Henning,
Simonas Krotkus,
Andrzej Wysmołek,
Jean-Philippe Tetienne
Abstract:
Hexagonal boron nitride (hBN) has recently been shown to host native defects exhibiting optically detected magnetic resonance (ODMR) with applications in nanoscale magnetic sensing and imaging. To advance these applications, deposition methods to create wafer-scale hBN films with controlled thicknesses are desirable, but a systematic study of the ODMR properties of the resultant films is lacking.…
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Hexagonal boron nitride (hBN) has recently been shown to host native defects exhibiting optically detected magnetic resonance (ODMR) with applications in nanoscale magnetic sensing and imaging. To advance these applications, deposition methods to create wafer-scale hBN films with controlled thicknesses are desirable, but a systematic study of the ODMR properties of the resultant films is lacking. Here we perform ODMR measurements of thin films (3-2000nm thick) grown via three different methods: metal-organic chemical vapour deposition (MOCVD), chemical vapour deposition (CVD), and molecular beam epitaxy (MBE). We find that they all exhibit an ODMR response, including the thinnest 3nm film, albeit with different characteristics. The best volume-normalised magnetic sensitivity obtained is 30uT/sqrt(Hz um^3). We study the effect of growth temperature on a series of MOCVD samples grown under otherwise fixed conditions and find 800-900C to be an optimum range for magnetic sensitivity, with a significant improvement (up to two orders of magnitude) from post-growth annealing. This work provides a useful baseline for the magnetic sensitivity of hBN thin films deposited via standard methods and informs the feasibility of future sensing applications.
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Submitted 27 May, 2025;
originally announced May 2025.
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Influence of Humidity on the Resistive Switching of Hexagonal Boron Nitride-Based Memristors
Authors:
Lukas Völkel,
Rana Walied Ahmad,
Alana Bestaeva,
Dennis Braun,
Sofía Cruces,
Jimin Lee,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Stephan Menzel,
Max C. Lemme
Abstract:
Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, no…
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Two-dimensional material-based memristors have recently gained attention as components of future neuromorphic computing concepts. However, their surrounding atmosphere can influence their behavior. In this work, we investigate the resistive switching behavior of hexagonal boron nitride-based memristors with active nickel electrodes under vacuum conditions. Our cells exhibit repeatable, bipolar, nonvolatile switching under voltage stress after initial forming, with a switching window > 10${^3}$ under ambient conditions. However, in a vacuum, the forming is suppressed, and hence, no switching is observed. Compact model simulations can reproduce the set kinetics of our cells under ambient conditions and predict highly suppressed resistive switching in a water-deficient environment, supporting the experimental results. Our findings have important implications for the application of h-BN-based memristors with electrochemically active electrodes since semiconductor chips are typically processed under high vacuum conditions and encapsulated to protect them from atmospheric influences.
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Submitted 20 January, 2025;
originally announced January 2025.
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Excitons in epitaxially grown WS2 on Graphene: a nanometer-resolved EELS and DFT study
Authors:
Max Bergmann,
Jürgen Belz,
Oliver Maßmeyer,
Badrosadat Ojaghi Dogahe,
Robin Günkel,
Johannes Glowatzki,
Andreas Beyer,
Ivan Solovev,
Jens-Christian Drawer,
Martin Esmann,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Stefan Wippermann,
Kerstin Volz
Abstract:
In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated…
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In this study, we investigate excitonic properties of epitaxially grown WS2, which is of particular interest for various applications due to its potential for upscaling to wafer sized structures. Understanding the effect of the dielectric environment due to changing layer numbers and multi-material heterostructures on the optical properties is crucial for tailoring device properties. Monochromated electron energy loss spectroscopy in a scanning transmission electron microscope is employed to characterize the excitonic spectrum of WS2 on graphene grown by metal organic chemical vapor deposition. This technique provides the required spatial resolution at the nanometer scale in combination with high quality spectra. To complement the experimental results, theoretical investigations using density functional theory and applying the Bethe-Salpeter equations are conducted. We find that by transitioning from mono- to bi- to multilayers of WS2 the spectra show redshifts for both, the K-valley excitons at about 2.0 and 2.4 eV as well as excitonic features of higher energies. The latter features originate from so called band nesting of transitions between the Gamma- and K-point. In summary, this study provides valuable insights into the excitonic properties of WS2 in different layer configurations and environments, which are realistically needed for future device fabrication and property tuning. Finally, we can show that nanometer scale electron spectroscopy supported by careful theoretical modelling can successfully link atomic structure and optical properties, such as exciton shifts, in non-idealized complex material systems like multilayer 2D heterostructures.
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Submitted 20 February, 2024;
originally announced February 2024.
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A Small Step for Epitaxy, a Large Step Towards Twist Angle Control in 2D Heterostructures
Authors:
Oliver Maßmeyer,
Jürgen Belz,
Badrosadat Ojaghi Dogahe,
Maximilian Widemann,
Robin Günkel,
Johannes Glowatzki,
Max Bergmann,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Andreas Beyer,
Kerstin Volz
Abstract:
Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise cont…
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Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties that make them highly suitable for novel device applications. Controllable mixing and matching of the 2D materials with different properties and a precise control of the in-plane twist angle in these heterostructures are essential to achieve superior properties and need to be established through large-scale device fabrication. To gain fundamental insight into the control of these twist angles, 2D heterostructures of tungsten disulfide (WS2) and graphene grown by bottom-up synthesis via metal-organic chemical vapor deposition (MOCVD) are investigated using a scanning transmission electron microscope (STEM). Specifically, the combination of conventional high-resolution imaging with scanning nano beam diffraction (SNBD) using advanced 4D STEM techniques is used to analyze moiré structures. The latter technique is used to reveal the epitaxial alignment within the WS2/Gr heterostructure, showing a direct influence of the underlying graphene layers on the moiré formation in the subsequent WS2 layers. In particular, the importance of grain boundaries within the underlying WS2 and Gr layers for the formation of moiré patterns with rotation angles below 2° is discussed.
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Submitted 8 February, 2024;
originally announced February 2024.
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Comprehensive evidence of lasing from a 2D material enabled by a dual-resonance metasurface
Authors:
Isabel Barth,
Manuel Deckart,
Donato Conteduca,
Guilherme S Arruda,
Zeki Hayran,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Francesco Monticone,
Thomas F Krauss,
Emiliano R Martins,
Yue Wang
Abstract:
Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true las…
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Semiconducting transition metal dichalcogenides (TMDs) have gained significant attention as a gain medium for nanolasers, owing to their unique ability to be easily placed and stacked on virtually any substrate. However, the atomically thin nature of the active material in existing TMD nanolasers presents a challenge, as their limited output power makes it difficult to distinguish between true laser operation and other "laser-like" phenomena. Here, we present comprehensive evidence of lasing from a CVD-grown tungsten disulphide (WS$_2$) monolayer. The monolayer is placed on a dual-resonance dielectric metasurface with a rectangular lattice designed to enhance both absorption and emission; resulting in an ultralow threshold operation (threshold <1 W/cm$^2$). We provide a thorough study of the laser performance at room temperature, paying special attention to directionality, output power, and spatial coherence. Notably, our lasers demonstrated a coherence length of over 30 $μ$m, which is several times greater than what has been reported for 2D material lasers so far. Our realisation of a single-mode laser from a wafer-scale CVD-grown monolayer presents exciting opportunities for integration and the development of novel applications.
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Submitted 20 June, 2023;
originally announced June 2023.
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Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene
Authors:
Eleonora Bonaventura,
Christian Martella,
Salvatore Macis,
Daya S. Dhungana,
Simonas Krotkus,
Michael Heuken,
Stefano Lupi,
Alessandro Molle,
Carlo Grazianetti
Abstract:
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited gra…
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Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets show a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of tin nanosheets therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.
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Submitted 13 June, 2023;
originally announced June 2023.
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Mapping domain junctions using 4D-STEM: toward controlled properties of epitaxially grown transition metal dichalcogenide monolayers
Authors:
Djordje Dosenovic,
Samuel Dechamps,
Celine Vergnaud,
Sergej Pasko,
Simonas Krotkus,
Michael Heuken,
Luigi Genovese,
Jean-Luc Rouviere,
Martien den Hertog,
Lucie Le Van-Jodin,
Matthieu Jamet,
Alain Marty,
Hanako Okuno
Abstract:
Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be descri…
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Epitaxial growth has become a promising route to achieve highly crystalline continuous two-dimensional layers. However, high-quality layer production with expected electrical properties is still challenging due to the defects induced by the coalescence between imperfectly aligned domains. In order to control their intrinsic properties at the device scale, the synthesized materials should be described as a patchwork of coalesced domains. Here, we report multi-scale and multistructural analysis on highly oriented epitaxial WS$_2$ and WSe$_2$ monolayers using scanning transmission electron microscopy (STEM) techniques. Characteristic domain junctions are first identified and classified based on the detailed atomic structure analysis using aberration corrected STEM imaging. Mapping orientation, polar direction and phase at the micrometer scale using four-dimensional STEM enabled to access the density and the distribution of the specific domain junctions. Our results validate a readily applicable process for the study of highly oriented epitaxial transition metal dichalcogenides, providing an overview of synthesized materials from large scale down to atomic scale with multiple structural information.
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Submitted 8 June, 2023;
originally announced June 2023.
