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Pulse Shaping Strategies for Efficient Switching of Magnetic Tunnel Junctions by Spin-Orbit Torque
Authors:
Marco Hoffmann,
Viola Krizakova,
Vaishnavi Kateel,
Kaiming Cai,
Sebastien Couet,
Pietro Gambardella
Abstract:
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization switching of MTJs induced by spin torques typically relies on square voltage pulses. Here, we focus on the switching of perpendicular MTJs driven by spin-orbit t…
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The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization switching of MTJs induced by spin torques typically relies on square voltage pulses. Here, we focus on the switching of perpendicular MTJs driven by spin-orbit torque (SOT), for which the magnetization reversal process consists of sequential domain nucleation and domain wall propagation. By performing a systematic study of the switching efficiency and speed as a function of pulse shape, we show that shaped pulses achieve up to 50% reduction of writing energy compared to square pulses without compromising the switching probability and speed. Time-resolved measurements of the tunneling magnetoresistance reveal how the switching times are strongly impacted by the pulse shape and temperature rise during the pulse. The optimal pulse shape consists of a preheating phase, a maximum amplitude to induce domain nucleation, and a lower amplitude phase to complete the reversal. Our experimental results, corroborated by micromagnetic simulations, provide diverse options to reduce the energy footprint of SOT devices in magnetic memory applications.
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Submitted 24 September, 2024;
originally announced September 2024.
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Field-Free Spin-Orbit Torque driven Switching of Perpendicular Magnetic Tunnel Junction through Bending Current
Authors:
Vaishnavi Kateel,
Viola Krizakova,
Siddharth Rao,
Kaiming Cai,
Mohit Gupta,
Maxwel Gama Monteiro,
Farrukh Yasin,
Bart Sorée,
Johan De Boeck,
Sebastien Couet,
Pietro Gambardella,
Gouri Sankar Kar,
Kevin Garello
Abstract:
Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications.…
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Current-induced spin-orbit torques (SOTs) enable fast and efficient manipulation of the magnetic state of magnetic tunnel junctions (MTJs), making it attractive for memory, in-memory computing, and logic applications. However, the requirement of the external magnetic field to achieve deterministic switching in perpendicular magnetized SOT-MTJs limits its implementation for practical applications. Here, we introduce a field-free switching (FFS) solution for the SOT-MTJ device by shaping the SOT channel to create a "bend" in the SOT current. The resulting bend in the charge current creates a spatially non-uniform spin current, which translates into inhomogeneous SOT on an adjacent magnetic free layer enabling deterministic switching. We demonstrate FFS experimentally on scaled SOT-MTJs at nanosecond time scales. This proposed scheme is scalable, material-agnostic, and readily compatible with wafer-scale manufacturing, thus creating a pathway for developing purely current-driven SOT systems.
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Submitted 6 May, 2023;
originally announced May 2023.
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Spin-orbit torque switching of magnetic tunnel junctions for memory application
Authors:
Viola Krizakova,
Manu Perumkunnil,
Sebastien Couet,
Pietro Gambardella,
Kevin Garello
Abstract:
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT), which have emerged as a leading non-volatile memory technologie, SOT broaden the scope of current-induced magnetic switching to applications tha…
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Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer torques (STT), which have emerged as a leading non-volatile memory technologie, SOT broaden the scope of current-induced magnetic switching to applications that run close to the clock speed of the central processing unit and unconventional computing architectures. In this paper, we review the fundamental characteristics of SOT and their use to switch magnetic tunnel junction (MTJ) devices, the elementary unit of the magnetoresistive random access memory (MRAM). In the first part, we illustrate the physical mechanisms that drive the SOT and magnetization reversal in nanoscale structures. In the second part, we focus on the SOT-MTJ cell. We discuss the anatomy of the MTJ in terms of materials and stack development, summarize the figures of merit for SOT switching, review the field-free operation of perpendicularly magnetized MTJs, and present options to combine SOT, STT and voltage-gate assisted switching. In the third part, we consider SOT-MRAMs in the perspective of circuit integration processes, introducing considerations on scaling and performance, as well as macro-design architectures. We thus bridge the fundamental description of SOT-driven magnetization dynamics with an application-oriented perspective, including device and system-level considerations, goals, and challenges.
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Submitted 25 July, 2022;
originally announced July 2022.
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Tailoring the switching efficiency of magnetic tunnel junctions by the fieldlike spin-orbit torque
Authors:
Viola Krizakova,
Marco Hoffmann,
Vaishnavi Kateel,
Siddharth Rao,
Sebastien Couet,
Gouri Sankar Kar,
Kevin Garello,
Pietro Gambardella
Abstract:
Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayer…
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Current-induced spin-orbit torques provide a versatile tool for switching magnetic devices. In perpendicular magnets, the dampinglike component of the torque is the main driver of magnetization reversal. The degree to which the fieldlike torque assists the switching is a matter of debate. Here we study the switching of magnetic tunnel junctions with a CoFeB free layer and either W or Ta underlayers, which have a ratio of fieldlike to dampinglike torque of 0.3 and 1, respectively. We show that the fieldlike torque can either assist or hinder the switching of CoFeB when the static in-plane magnetic field required to define the polarity of spin-orbit torque switching has a component transverse to the current. In particular, the non-collinear alignment of the field and current can be exploited to increase the switching efficiency and reliability compared to the standard collinear alignment. By probing individual switching events in real-time, we also show that the combination of transverse magnetic field and fieldlike torque can accelerate or decelerate the reversal onset. We validate our observations using micromagnetic simulations and extrapolate the results to materials with different torque ratios. Finally, we propose device geometries that leverage the fieldlike torque for density increase in memory applications and synaptic weight generation.
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Submitted 28 October, 2022; v1 submitted 29 June, 2022;
originally announced June 2022.
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Interplay of voltage control of magnetic anisotropy, spin transfer torque, and heat in the spin-orbit torque switching in three-terminal magnetic tunnel junctions
Authors:
Viola Krizakova,
Eva Grimaldi,
Kevin Garello,
Giacomo Sala,
Sebastien Couet,
Gouri Sankar Kar,
Pietro Gambardella
Abstract:
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the a…
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We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent action of an SOT pulse and an MTJ bias pulse allows for reducing the critical switching energy below the level typical of spin transfer torque while preserving the ability to switch the MTJ on the sub-ns time scale. By performing dc and real-time electrical measurements, we discriminate and quantify three effects arising from the MTJ bias: the voltage-controlled change of the perpendicular magnetic anisotropy, current-induced heating, and the spin transfer torque. The experimental results are supported by micromagnetic modeling. We observe that, depending on the pulse duration and the MTJ diameter, different effects take a lead in assisting the SOTs in the magnetization reversal process. Finally, we present a compact model that allows for evaluating the impact of each effect due to the MTJ bias on the critical switching parameters. Our results provide input to optimize the switching of three-terminal devices as a function of time, size, and material parameters.
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Submitted 2 June, 2021;
originally announced June 2021.
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Real-time Hall-effect detection of current-induced magnetization dynamics in ferrimagnets
Authors:
G. Sala,
V. Krizakova,
E. Grimaldi,
C. -H. Lambert,
T. Devolder,
P. Gambardella
Abstract:
Measurements of the transverse Hall resistance are widely used to investigate electron transport, magnetization phenomena, and topological quantum states. Owing to the difficulty of probing transient changes of the transverse resistance, the vast majority of Hall effect experiments are carried out in stationary conditions using either dc or ac currents. Here we present an approach to perform time-…
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Measurements of the transverse Hall resistance are widely used to investigate electron transport, magnetization phenomena, and topological quantum states. Owing to the difficulty of probing transient changes of the transverse resistance, the vast majority of Hall effect experiments are carried out in stationary conditions using either dc or ac currents. Here we present an approach to perform time-resolved measurements of the transient Hall resistance during current-pulse injection with sub-nanosecond temporal resolution. We apply this technique to investigate in real-time the magnetization reversal caused by spin-orbit torques in ferrimagnetic GdFeCo dots. Single-shot Hall effect measurements show that the current-induced switching of GdFeCo is widely distributed in time and characterized by significant activation delays, which limit the total switching speed despite the high domain-wall velocity typical of ferrimagnets. Our method applies to a broad range of current-induced phenomena and can be combined with non-electrical excitations to perform pump-probe Hall effect measurements.
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Submitted 1 February, 2021;
originally announced February 2021.
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Single-shot dynamics of spin-orbit torque and spin transfer torque switching in three-terminal magnetic tunnel junctions
Authors:
Eva Grimaldi,
Viola Krizakova,
Giacomo Sala,
Farrukh Yasin,
Sébastien Couet,
Gouri Sankar Kar,
Kevin Garello,
Pietro Gambardella
Abstract:
Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetiza…
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Current-induced spin-transfer torques (STT) and spin-orbit torques (SOT) enable the electrical switching of magnetic tunnel junctions (MTJs) in nonvolatile magnetic random access memories. In order to develop faster memory devices, an improvement of the timescales underlying the current driven magnetization dynamics is required. Here we report all-electrical time-resolved measurements of magnetization reversal driven by SOT in a three-terminal MTJ device. Single-shot measurements of the MTJ resistance during current injection reveal that SOT switching involves a stochastic two-step process consisting of a domain nucleation time and propagation time, which have different genesis, timescales, and statistical distributions compared to STT switching. We further show that the combination of SOT, STT, and voltage control of magnetic anisotropy (VCMA) leads to reproducible sub-ns switching with a spread of the cumulative switching time smaller than 0.2 ns. Our measurements unravel the combined impact of SOT, STT, and VCMA in determining the switching speed and efficiency of MTJ devices.
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Submitted 17 November, 2020;
originally announced November 2020.
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Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
Authors:
Viola Krizakova,
Kevin Garello,
Eva Grimaldi,
Gouri Sankar Kar,
Pietro Gambardella
Abstract:
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measure…
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We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage.
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Submitted 11 June, 2020;
originally announced June 2020.
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Study of the velocity plateau of Dzyaloshinskii domain walls
Authors:
V. Krizakova,
J. Pena Garcia,
J. Vogel,
N. Rougemaille,
D. de Souza Chaves,
S. Pizzini,
A. Thiaville
Abstract:
We study field-driven domain wall (DW) velocities in asymmetric multilayer stacks with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction (DMI), both experimentally and by micromagnetic simulations. Using magneto-optical Kerr microscopy under intense and nanoseconds-long fields, we show that DWs in these films propagate at velocities up to hundreds of m/s and that, instead of…
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We study field-driven domain wall (DW) velocities in asymmetric multilayer stacks with perpendicular magnetic anisotropy and Dzyaloshinskii-Moriya interaction (DMI), both experimentally and by micromagnetic simulations. Using magneto-optical Kerr microscopy under intense and nanoseconds-long fields, we show that DWs in these films propagate at velocities up to hundreds of m/s and that, instead of the expected decrease of velocity after the Walker field, a long plateau with constant velocity is observed, before breakdown. Both the maximum speed and the field extent of the velocity plateau strongly depend on the values of the spontaneous magnetization and the DMI strength, as well as on the magnetic anisotropy. Micromagnetic simulations reproduce these features in sufficiently wide strips, even for perfect samples. A physical model explaining the microscopic origin of the velocity plateau is proposed.
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Submitted 22 August, 2019;
originally announced August 2019.
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Zero-field propagation of spin waves in waveguides prepared by focused ion beam direct writing
Authors:
Lukáš Flajšman,
Kai Wagner,
Marek Vaňatka,
Jonáš Gloss,
Viola Křižáková,
Michael Schmid,
Helmut Schultheiss,
Michal Urbánek
Abstract:
Metastable face-centered-cubic Fe78Ni22 thin films grown on Cu(001) substrates are excellent candidates for focused ion beam direct writing of magnonic structures due to their favorable magnetic properties after ion-beam-induced transformation. The focused ion beam transforms the originally nonmagnetic fcc phase into the ferromagnetic bcc phase with additional control over the direction of uniaxia…
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Metastable face-centered-cubic Fe78Ni22 thin films grown on Cu(001) substrates are excellent candidates for focused ion beam direct writing of magnonic structures due to their favorable magnetic properties after ion-beam-induced transformation. The focused ion beam transforms the originally nonmagnetic fcc phase into the ferromagnetic bcc phase with additional control over the direction of uniaxial magnetic in-plane anisotropy. The magnetocrystalline anisotropy in transformed areas is strong enough to stabilize the magnetization in transverse direction to the long axis of narrow waveguides. Therefore, it is possible to propagate spin waves in these waveguides without the presence of an external magnetic field in the favorable Demon-Eshbach geometry. Phase-resolved micro-focused Brillouin light scattering yields the dispersion relation of these waveguides in zero as well as in nonzero external magnetic fields.
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Submitted 18 July, 2019; v1 submitted 28 June, 2019;
originally announced June 2019.
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The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning
Authors:
Jonas Gloss,
Michal Horký,
Viola Křižáková,
Lukáš Flajšman,
Michael Schmid,
Michal Urbánek,
Peter Varga
Abstract:
We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a template for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only o…
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We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a template for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single crystal Cu(100) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(100) with a 130-nm-thick Cu(100) buffer layer. The H-Si(100) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200°C followed by adsorption of atomic hydrogen. The Cu(100) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in an ultra-high vacuum. The films were consequently transformed in-situ by 4keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused ion beam direct magnetic patterning.
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Submitted 20 July, 2018;
originally announced July 2018.
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Large voltage tuning of Dzyaloshinskii-Moriya Interaction: a route towards dynamic control of skyrmion chirality
Authors:
Titiksha Srivastava,
Marine Schott,
Roméo Juge,
Viola Křižáková,
Mohamed Belmeguenai,
Yves Soussigné,
Anne Bernand-Mantel,
Laurent Ranno,
Stefania Pizzini,
Salim-Mourad Chérif,
Andrey Stashkevich,
Stéphane Auffret,
Olivier Boulle,
Gilles Gaudin,
Mair Chshiev,
Claire Baraduc,
Hélène Béa
Abstract:
Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is cruci…
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Electric control of magnetism is a prerequisite for efficient and low power spintronic devices. More specifically, in heavy metal/ ferromagnet/ insulator heterostructures, voltage gating has been shown to locally and dynamically tune magnetic properties like interface anisotropy and saturation magnetization. However, its effect on interfacial Dzyaloshinskii-Moriya Interaction (DMI), which is crucial for the stability of magnetic skyrmions, has been challenging to achieve and has not been reported yet for ultrathin films. Here, we demonstrate 130% variation of DMI with electric field in Ta/FeCoB/TaOx trilayers through Brillouin Light Spectroscopy (BLS). Using polar- Magneto-Optical-Kerr-Effect microscopy, we further show a monotonic variation of DMI and skyrmionic bubble size with electric field, with an unprecedented efficiency. We anticipate through our observations that a sign reversal of DMI with electric field is possible, leading to a chirality switch. This dynamic manipulation of DMI establishes an additional degree of control to engineer programmable skyrmion based memory or logic devices.
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Submitted 26 June, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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Velocity enhancement by synchronization of magnetic domain walls
Authors:
Aleš Hrabec,
Viola Křižáková,
Stefania Pizzini,
João Sampaio,
André Thiaville,
Stanislas Rohart,
Jan Vogel
Abstract:
Magnetic domain walls are objects whose dynamics is inseparably connected to their structure. In this work we investigate magnetic bilayers, which are engineered such that a coupled pair of domain walls, one in each layer, is stabilized by a cooperation of Dzyaloshinskii-Moriya interaction and flux-closing mechanism. The dipolar field mediating the interaction between the two domain walls, links n…
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Magnetic domain walls are objects whose dynamics is inseparably connected to their structure. In this work we investigate magnetic bilayers, which are engineered such that a coupled pair of domain walls, one in each layer, is stabilized by a cooperation of Dzyaloshinskii-Moriya interaction and flux-closing mechanism. The dipolar field mediating the interaction between the two domain walls, links not only their position but also their structure. We show that this link has a direct impact on their magnetic field induced dynamics. We demonstrate that in such a system the coupling leads to an increased domain wall velocity with respect to single domain walls. Since the domain wall dynamics is observed in a precessional regime, the dynamics involves the synchronization between the two walls, to preserve the flux closure during motion. Properties of these coupled oscillating walls can be tuned by an additional in-plane magnetic field enabling a rich variety of states, from perfect synchronization to complete detuning.
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Submitted 4 April, 2018;
originally announced April 2018.
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Focused ion beam direct writing of magnetic patterns with controlled structural and magnetic properties
Authors:
Michal Urbánek,
Lukáš Flajšman,
Viola Křižáková,
Jonáš Gloss,
Michal Horký,
Michael Schmid,
Peter Varga
Abstract:
Focused ion beam irradiation of metastable Fe$_{78}$Ni$_{22}$ thin films grown on Cu(100) substrates is used to create ferromagnetic, body-centered-cubic patterns embedded into paramagnetic, face-centered-cubic surrounding. The structural and magnetic phase transformation can be controlled by varying parameters of the transforming gallium ion beam. The focused ion beam parameters as ion dose, numb…
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Focused ion beam irradiation of metastable Fe$_{78}$Ni$_{22}$ thin films grown on Cu(100) substrates is used to create ferromagnetic, body-centered-cubic patterns embedded into paramagnetic, face-centered-cubic surrounding. The structural and magnetic phase transformation can be controlled by varying parameters of the transforming gallium ion beam. The focused ion beam parameters as ion dose, number of scans, and scanning direction can be used not only to control a degree of transformation, but also to change the otherwise four-fold in-plane magnetic anisotropy into the uniaxial anisotropy along specific crystallographic direction. This change is associated with a preferred growth of specific crystallographic domains. The possibility to create magnetic patterns with continuous magnetization transitions and at the same time to create patterns with periodical changes in magnetic anisotropy makes this system an ideal candidate for rapid prototyping of a large variety of nanostructured samples. Namely spin-wave waveguides and magnonic crystals can be easily combined into complex devices in a single fabrication step.
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Submitted 12 March, 2018;
originally announced March 2018.
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Tuning domain wall velocity with Dzyaloshinskii-Moriya interaction
Authors:
Fernando Ajejas,
Viola Krizakova,
Dayane de Souza Chaves,
Jan Vogel,
Paolo Perna,
Ruben Guerrero,
Adrian Gudin,
Julio Camarero,
Stefania Pizzini
Abstract:
We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al.…
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We have studied a series of Pt/Co/M epitaxial trilayers, in which Co is sandwiched between Pt and a non magnetic layer M (Pt, Ir, Cu, Al). Using polar magneto-optical Kerr microscopy, we show that the field- induced domain wall speeds are strongly dependent on the nature of the top layer, they increase going from M=Pt to lighter top metallic overlayers, and can reach several 100 m/s for Pt/Co/Al. The DW dynamics is consistent with the presence of chiral Néel walls stabilized by interfacial Dzyaloshinskii-Moriya interaction (DMI) whose strength increases going from Pt to Al top layers. This is explained by the presence of DMI with opposite sign at the Pt/Co and Co/M interfaces, the latter increasing in strength going towards heavier atoms, possibly due to the increasing spin-orbit interaction. This work shows that in non-centrosymmetric trilayers the domain wall dynamics can be finely tuned by engineering the DMI strength, in view of efficient devices for logic and spitronics applications.
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Submitted 28 September, 2017;
originally announced September 2017.
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Dependence of Dzyaloshinskii-Moriya interaction on the oxygen coverage in Pt/Co/MOx trilayers
Authors:
Dayane de Souza Chaves,
Fernando Ajejas,
Viola Krizakova,
Jan Vogel,
Stefania Pizzini
Abstract:
We have studied the interfacial Dzyaloshinskii-Moriya interaction (DMI) in a series of Pt/Co/MOx (M=Al, Gd) trilayers in which the degree of oxidation of the top Co interface is varied. To access to reliable values of the DMI strength, we have used a method based on the measurement of the saturation velocity of field driven chiral Néel domain walls. We show that the effective DMI strength in the P…
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We have studied the interfacial Dzyaloshinskii-Moriya interaction (DMI) in a series of Pt/Co/MOx (M=Al, Gd) trilayers in which the degree of oxidation of the top Co interface is varied. To access to reliable values of the DMI strength, we have used a method based on the measurement of the saturation velocity of field driven chiral Néel domain walls. We show that the effective DMI strength in the Pt/Co/MOx trilayers varies with the oxidation degree of the Co/MOx interface. This strongly suggests that the Co/MOx interface gives a distinct contribution to the total DMI, adding to that of the Pt/Co interface. The DMI presents a maximum for the oxygen coverage maximizing also the interface magnetic anisotropy energy Ks. This calls for common microscopic origins for the contributions of the Co/MOx interface to DMI and Ks.
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Submitted 28 August, 2017;
originally announced August 2017.
