Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Authors:
Jiuning Hu,
Albert F. Rigosi,
Mattias Kruskopf,
Yanfei Yang,
Bi-Yi Wu,
Jifa Tian,
Alireza R. Panna,
Hsin-Yen Lee,
Shamith U. Payagala,
George R. Jones,
Marlin E. Kraft,
Dean G. Jarrett,
Kenji Watanabe,
Takashi Taniguchi,
Randolph E. Elmquist,
David B. Newell
Abstract:
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditio…
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We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
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Submitted 10 January, 2022;
originally announced January 2022.
