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Lifting topological protection in a quantum spin Hall insulator by edge coupling
Authors:
Raul Stühler,
André Kowalewski,
Felix Reis,
Dimitri Jungblut,
Fernando Dominguez,
Benedikt Scharf,
Gang Li,
Jörg Schäfer,
Ewelina M. Hankiewicz,
Ralph Claessen
Abstract:
The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological p…
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The scientific interest in two-dimensional topological insulators (2D TIs) is currently shifting from a more fundamental perspective to the exploration and design of novel functionalities. Key concepts for the use of 2D TIs in spintronics are based on the topological protection and spin-momentum locking of their helical edge states. In this study we present experimental evidence that topological protection can be (partially) lifted by pairwise coupling of 2D TI edges in close proximity. Using direct wave function mapping via scanning tunneling microscopy/spectroscopy (STM/STS) we compare isolated and coupled topological edges in the 2D TI bismuthene. The latter situation is realized by natural lattice line defects and reveals distinct quasi-particle interference (QPI) patterns, identified as electronic Fabry-Pérot resonator modes. In contrast, free edges show no sign of any single-particle backscattering. These results pave the way for novel device concepts based on active control of topological protection through inter-edge hybridization for, e.g., electronic Fabry-Pérot interferometry.
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Submitted 8 November, 2021;
originally announced November 2021.
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Multivalent Diffusive Transport
Authors:
Antonia Kowalewski,
Nancy R. Forde,
Chapin S. Korosec
Abstract:
We present here a model for multivalent diffusive transport whereby a central point-like hub is coupled to multiple feet, which bind to complementary sites on a two-dimensional landscape. The available number of binding interactions is dependent on the number of feet (multivalency), and on their allowed distance from the central hub (span). Using Monte Carlo simulations that implement the Gillespi…
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We present here a model for multivalent diffusive transport whereby a central point-like hub is coupled to multiple feet, which bind to complementary sites on a two-dimensional landscape. The available number of binding interactions is dependent on the number of feet (multivalency), and on their allowed distance from the central hub (span). Using Monte Carlo simulations that implement the Gillespie algorithm, we simulate multivalent diffusive transport processes for 100 distinct walker designs. Informed by our simulation results we derive an analytical expression for the diffusion coefficient of a general multivalent diffusive process as a function of multivalency, span, and dissociation constant Kd. Our findings can be used to guide experimental design of multivalent transporters, in particular providing insight into how to overcome trade-offs between diffusivity and processivity.
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Submitted 7 June, 2021; v1 submitted 2 June, 2021;
originally announced June 2021.
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Tailoring the topological surface state in ultrathin $α$-Sn (111) films
Authors:
Victor A. Rogalev,
Felix Reis,
Florian Adler,
Maximilian Bauernfeind,
Jonas Erhardt,
André Kowalewski,
Markus R. Scholz,
Lenart Dudy,
Liam B. Duffy,
Thorsten Hesjedal,
Moritz Hoesch,
Gustav Bihlmayer,
Jörg Schäfer,
Ralph Claessen
Abstract:
We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV be…
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We report on the electronic structure of $α$-Sn films in the very low thickness regime grown on InSb(111)A. High-resolution low photon energies angle-resolved photoemission (ARPES) allows for the direct observation of the linearly dispersing 2D topological surface states (TSSs) that exist between the second valence band and the conduction band. The Dirac point of this TSS was found to be 200meV below the Fermi level in 10-nm-thick $α$-Sn films, which enables the observation of the hybridization gap opening at the Dirac point of the TSS for thinner films. The crossover to a quasi-2D electronic structure is accompanied by a full gap opening at the Brillouin zone center, in agreement with our density functional theory calculations. We further identify the thickness regime of $α$-Sn films where the hybridization gap in TSS coexists with the topologically non-trivial electronic structure and one can expect the presence of a 1D helical edge states.
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Submitted 6 December, 2019; v1 submitted 24 October, 2019;
originally announced October 2019.
