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Charge to spin conversion in atomically thin bismuth
Authors:
Wilson J. Yánez-Parreño,
Alexander Vera,
Sandra Santhosh,
Chengye Dong,
Jimmy C. Kotsakidis,
Yongxi Ou,
Saurav Islam,
Adam L. Friedman,
Maxwell Wetherington,
Joshua Robinson,
Nitin Samarth
Abstract:
We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \% intercalation coverage using X-ray photolectron spectroscopy, scanning transmission microscopy, low energy electron diffraction, and Raman spectroscopy. Electri…
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We report charge to spin conversion in a hybrid heterostructure comprised of atomically thin bismuth (Bi) confined between a silicon carbide (SiC) substrate and epitaxial graphene (EG). We confirm composition, dimensionality, and a 96.5 \% intercalation coverage using X-ray photolectron spectroscopy, scanning transmission microscopy, low energy electron diffraction, and Raman spectroscopy. Electrical transport measurements show signs of weak antilocalization in the heterostructure, consistent with spin-orbit coupling in this hybrid heterostructure. Spin torque ferromagnetic resonance measurements in permalloy/EG/2D-Bi heterostructures probe charge-to-spin conversion and revealing that an in plane polarization of the spin current, perpendicular to the charge current. The ratio of the in-plane to out-of-plane torque is 3.75 times higher than in hydrogenated graphene control samples.
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Submitted 13 January, 2025;
originally announced January 2025.
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Quasi-free-standing AA-stacked bilayer graphene induced by calcium intercalation of the graphene-silicon carbide interface
Authors:
Antonija Grubišić-Čabo,
Jimmy C. Kotsakidis,
Yuefeng Yin,
Anton Tadich,
Matthew Haldon,
Sean Solari,
John Riley,
Eric Huwald,
Kevin M. Daniels,
Rachael L. Myers-Ward,
Mark T. Edmonds,
Nikhil Medhekar,
D. Kurt Gaskill,
Michael S. Fuhrer
Abstract:
We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminatin…
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We study quasi-freestanding bilayer graphene on silicon carbide intercalated by calcium. The intercalation, and subsequent changes to the system, were investigated by low-energy electron diffraction, angle-resolved photoemission spectroscopy (ARPES) and density-functional theory (DFT). Calcium is found to intercalate only at the graphene-SiC interface, completely displacing the hydrogen terminating SiC. As a consequence, the system becomes highly n-doped. Comparison to DFT calculations shows that the band dispersion, as determined by ARPES, deviates from the band structure expected for Bernal-stacked bilayer graphene. Instead, the electronic structure closely matches AA-stacked bilayer graphene on Ca-terminated SiC, indicating a spontaneous transition from AB- to AA-stacked bilayer graphene following calcium intercalation of the underlying graphene-SiC interface.
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Submitted 4 November, 2023;
originally announced November 2023.
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Increasing the Rate of Magnesium Intercalation Underneath Epitaxial Graphene on 6H-SiC(0001)
Authors:
Jimmy C. Kotsakidis,
Marc Currie,
Antonija Grubišić-Čabo,
Anton Tadich,
Rachael L. Myers-Ward,
Matthew DeJarld,
Kevin M. Daniels,
Chang Liu,
Mark T. Edmonds,
Amadeo L. Vázquez de Parga,
Michael S. Fuhrer,
D. Kurt Gaskill
Abstract:
Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by las…
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Magnesium intercalated 'quasi-freestanding' bilayer graphene on 6H-SiC(0001) (Mg-QFSBLG) has many favorable properties (e.g., highly n-type doped, relatively stable in ambient conditions). However, intercalation of Mg underneath monolayer graphene is challenging, requiring multiple intercalation steps. Here, we overcome these challenges and subsequently increase the rate of Mg intercalation by laser patterning (ablating) the graphene to form micron-sized discontinuities. We then use low energy electron diffraction to verify Mg-intercalation and conversion to Mg-QFSBLG, and X-ray photoelectron spectroscopy to determine the Mg intercalation rate for patterned and non-patterned samples. By modeling Mg intercalation with the Verhulst equation, we find that the intercalation rate increase for the patterned sample is 4.5$\pm$1.7. Since the edge length of the patterned sample is $\approx$5.2 times that of the non-patterned sample, the model implies that the increased intercalation rate is proportional to the increase in edge length. Moreover, Mg intercalation likely begins at graphene discontinuities in pristine samples (not step edges or flat terraces), where the 2D-like crystal growth of Mg-silicide proceeds. Our laser patterning technique may enable the rapid intercalation of other atomic or molecular species, thereby expanding upon the library of intercalants used to modify the characteristics of graphene, or other 2D materials and heterostructures.
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Submitted 27 July, 2023;
originally announced July 2023.
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Large-Area Intercalated 2D-Pb/Graphene Heterostructure as a Platform for Generating Spin-Orbit Torque
Authors:
Alexander Vera,
Boyang Zheng,
Wilson Yanez,
Kaijie Yang,
Seong Yeoul Kim,
Xinglu Wang,
Jimmy C. Kotsakidis,
Hesham El-Sherif,
Gopi Krishnan,
Roland J. Koch,
T. Andrew Bowen,
Chengye Dong,
Yuanxi Wang,
Maxwell Wetherington,
Eli Rotenberg,
Nabil Bassim,
Adam L. Friedman,
Robert M. Wallace,
Chaoxing Liu,
Nitin Samarth,
Vincent H. Crespi,
Joshua A. Robinson
Abstract:
A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibit…
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A scalable platform to synthesize ultrathin heavy metals may enable high efficiency charge-to-spin conversion for next-generation spintronics. Here we report the synthesis of air-stable, epitaxially registered monolayer Pb underneath bilayer graphene on SiC (0001) by confinement heteroepitaxy (CHet). Diffraction, spectroscopy, and microscopy reveal CHet-based Pb intercalation predominantly exhibits a mottled hexagonal superstructure due to an ordered network of Frenkel-Kontorova-like domain walls. The system's air stability enables ex-situ spin torque ferromagnetic resonance (ST-FMR) measurements that demonstrate charge-to-spin conversion in graphene/Pb/ferromagnet heterostructures with a 1.5x increase in the effective field ratio compared to control samples.
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Submitted 20 August, 2024; v1 submitted 13 May, 2022;
originally announced May 2022.
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Magnesium-intercalated graphene on SiC: highly n-doped air-stable bilayer graphene at extreme displacement fields
Authors:
Antonija Grubišić-Čabo,
Jimmy C. Kotsakidis,
Yuefeng Yin,
Anton Tadich,
Matthew Haldon,
Sean Solari,
Iolanda di Bernardo,
Kevin M. Daniels,
John Riley,
Eric Huwald,
Mark T. Edmonds,
Rachael Myers-Ward,
Nikhil V. Medhekar,
D. Kurt Gaskill,
Michael S. Fuhrer
Abstract:
We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesiu…
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We use angle-resolved photoemission spectroscopy to investigate the electronic structure of bilayer graphene at high n-doping and extreme displacement fields, created by intercalating epitaxial monolayer graphene on silicon carbide with magnesium to form quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide. Angle-resolved photoemission spectroscopy reveals that upon magnesium intercalation, the single massless Dirac band of epitaxial monolayer graphene is transformed into the characteristic massive double-band Dirac spectrum of quasi-freestanding bilayer graphene. Analysis of the spectrum using a simple tight binding model indicates that magnesium intercalation results in an n-type doping of 2.1 $\times$ 10$^{14}$ cm$^{-2}$, creates an extremely high displacement field of 2.6 V/nm, opening a considerable gap of 0.36 eV at the Dirac point. This is further confirmed by density-functional theory calculations for quasi-freestanding bilayer graphene on magnesium-terminated silicon carbide, which show a similar doping level, displacement field and bandgap. Finally, magnesium-intercalated samples are surprisingly robust to ambient conditions; no significant changes in the electronic structure are observed after 30 minutes exposure in air.
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Submitted 27 August, 2020; v1 submitted 6 May, 2020;
originally announced May 2020.
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Freestanding n-Doped Graphene via Intercalation of Calcium and Magnesium into the Buffer Layer - SiC(0001) Interface
Authors:
Jimmy C. Kotsakidis,
Antonija Grubišić-Čabo,
Yuefeng Yin,
Anton Tadich,
Rachael L. Myers-Ward,
Matthew Dejarld,
Shojan P. Pavunny,
Marc Currie,
Kevin M. Daniels,
Chang Liu,
Mark T. Edmonds,
Nikhil V. Medhekar,
D. Kurt Gaskill,
Amadeo L. Vazquez de Parga,
Michael S. Fuhrer
Abstract:
The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy…
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The intercalation of epitaxial graphene on SiC(0001) with Ca has been studied extensively, yet precisely where the Ca resides remains elusive. Furthermore, the intercalation of Mg underneath epitaxial graphene on SiC(0001) has not been reported. Here, we use low energy electron diffraction, x-ray photoelectron spectroscopy, secondary electron cut-off photoemission and scanning tunneling microscopy to elucidate the physical and electronic structure of both Ca- and Mg-intercalated epitaxial graphene on 6H-SiC(0001). We find that Ca intercalates underneath the buffer layer and bonds to the Si-terminated SiC surface, breaking the C-Si bonds of the buffer layer i.e. 'freestanding' the buffer layer to form Ca-intercalated quasi-freestanding bilayer graphene (Ca-QFSBLG). The situation is similar for the Mg-intercalation of epitaxial graphene on SiC(0001), where an ordered Mg-terminated reconstruction at the SiC surface and Mg bonds to the Si-terminated SiC surface are formed, resulting in Mg-intercalated quasi-freestanding bilayer graphene (Mg-QFSBLG). Ca-intercalation underneath the buffer layer has not been considered in previous studies of Ca-intercalated epitaxial graphene. Furthermore, we find no evidence that either Ca or Mg intercalates between graphene layers. However, we do find that both Ca-QFSBLG and Mg-QFSBLG exhibit very low workfunctions of 3.68 and 3.78 eV, respectively, indicating high n-type doping. Upon exposure to ambient conditions, we find Ca-QFSBLG degrades rapidly, whereas Mg-QFSBLG remains remarkably stable.
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Submitted 13 July, 2020; v1 submitted 3 April, 2020;
originally announced April 2020.
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Oxidation of Monolayer WS$_{2}$ in Ambient is a Photoinduced Process
Authors:
Jimmy C. Kotsakidis,
Quianhui Zhang,
Amadeo L. Vazquez de Parga,
Marc Currie,
Kristian Helmerson,
D. Kurt Gaskill,
Michael S. Fuhrer
Abstract:
We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM), photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM). Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light (typical laboratory…
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We have studied the ambient air oxidation of chemical vapor deposition (CVD) grown monolayers of the semiconducting transition metal dichalcogenide (S-TMD) WS$_{2}$ using optical microscopy, laser scanning confocal microscopy (LSCM), photoluminescence (PL) spectroscopy, and atomic force microscopy (AFM). Monolayer WS$_{2}$ exposed to ambient conditions in the presence of light (typical laboratory ambient light for weeks, or typical PL spectroscopy map), exhibits damage due to oxidation which can be detected with the LSCM and AFM; though may not be evident in conventional optical microscopy due to poorer contrast and resolution. Additionally, this oxidation was not random, and correlated with 'high-symmetry' and red-shifted areas in the PL spectroscopy map - areas thought to contain a higher concentration of sulfur vacancies. In contrast, samples kept in ambient and darkness showed no signs of oxidation for up to 10 months. Low-irradiance/fluence experiments showed that samples subjected to excitation energies at or above the trion excitation energy (532 nm/2.33 eV and 660 nm/1.88 eV) oxidized in as little as 7 days, even for irradiances and fluences eight and four orders of magnitude lower (respectively) than previously reported. No significant oxidation was observed for 760 nm/1.63 eV light exposure, which lies below the trion excitation energy in WS$_{2}$. The strong wavelength dependence and apparent lack of irradiance dependence suggests that ambient oxidation of WS$_{2}$ is initiated by photon-mediated electronic band transitions, that is, photo-oxidation. These findings have important implications for prior, present and future studies concerning S-TMDs measured, stored or manipulated in ambient conditions.
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Submitted 3 July, 2019; v1 submitted 2 June, 2019;
originally announced June 2019.