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Self-intercalation as origin of high-temperature ferromagnetism in epitaxially grown Fe5GeTe2 thin films
Authors:
M. Silinskas,
S. Senz,
P. Gargiani,
A. M. Ruiz,
B. Kalkofen,
I. Kostanovskiy,
K. Mohseni,
J. J. Baldoví,
H. L. Meyerheim,
S. S. P. Parkin,
A. Bedoya-Pinto
Abstract:
The role of self-intercalation in 2D van der Waals materials is key to the understanding of many of their properties. Here we show that the magnetic ordering temperature of thin films of the 2D ferromagnet Fe5GeTe2 is substantially increased by self-intercalated Fe that resides in the van der Waals gaps. The epitaxial films were prepared by molecular beam epitaxy and their magnetic properties expl…
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The role of self-intercalation in 2D van der Waals materials is key to the understanding of many of their properties. Here we show that the magnetic ordering temperature of thin films of the 2D ferromagnet Fe5GeTe2 is substantially increased by self-intercalated Fe that resides in the van der Waals gaps. The epitaxial films were prepared by molecular beam epitaxy and their magnetic properties explored by element-specific x-ray magnetic circular dichroism that showed ferromagnetic ordering up to 375 K. Both surface and bulk sensitive x-ray absorption modes were used to confirm that the magnetic signal is of an intrinsic nature. Fe occupation within the van der Waals gap was determined by x-ray diffraction which showed a notably higher occupation with respect to bulk crystals. We thus infer, supported by first-principles calculations, that the higher magnetic ordering temperature results from an increased exchange interaction between the individual Fe5GeTe2 layers mediated by Fe atoms residing within the van der Waals gaps. Our findings establish self-intercalation during epitaxial growth as an efficient mechanism to achieve high-temperature magnetism in a broad class of van der Waals materials.
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Submitted 4 September, 2024; v1 submitted 29 September, 2023;
originally announced September 2023.
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Doping-induced spin Hall ratio enhancement in A15-phase, Ta-doped Beta-W thin films
Authors:
Mohsin Z. Minhas,
Avanindra K. Pandeya,
Bharat Grover,
Alessandro Fumarola,
Ilya Kostanovskiy,
Wolfgang Hoppe,
Georg Woltersdorf,
Amilcar Bedoya-Pinto,
Stuart S. P. Parkin,
Mazhar N. Ali
Abstract:
As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin…
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As spintronic devices become more and more prevalent, the desire to find Pt free materials with large spin Hall effects is increasing. Previously it was shown that Beta W, the metastable A15 structured variant of pure W, has charge-spin conversion efficiencies on par with Pt, and it was predicted that Beta W(Ta) alloys should be even more efficient. Here we demonstrate the enhancement of the spin Hall ratio (SHR) in A15-phase Beta W films doped with Ta (W(4-x)Tax where x is between 0.28 and 0.4, deposited at room temperature using DC magnetron co-sputtering. In close agreement with theoretical predictions, we find that the SHR of the doped films was approx. 9 percent larger than pure Beta W films. We also found that the SHRs in devices with Co2Fe6B2 were nearly twice as large as the SHRs in devices with Co4Fe4B2. This work shows that by optimizing deposition parameters and substrates, the fabrication of the optimum W3Ta alloy should be feasible, opening the door to commercially viable, Pt free, spintronic devices.
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Submitted 18 May, 2020; v1 submitted 15 May, 2020;
originally announced May 2020.
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Towards Weyltronics: Realization of epitaxial NbP and TaP Weyl Semimetal thin films
Authors:
Amilcar Bedoya-Pinto,
Avanindra Kumar Pandeya,
Defa Liu,
Hakan Deniz,
Kai Chang,
Hengxin Tan,
Hyeon Han,
Jagannath Jena,
Ilya Kostanovskiy,
Stuart Parkin
Abstract:
Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here,…
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Weyl Semimetals (WSMs), a recently discovered topological state of matter, exhibit an electronic structure governed by linear band dispersions and degeneracy (Weyl) points leading to rich physical phenomena, which are yet to be exploited in thin film devices. While WSMs were established in the monopnictide compound family several years ago, the growth of thin films has remained a challenge. Here, we report the growth of epitaxial thin films of NbP and TaP by means of molecular beam epitaxy. Single crystalline films are grown on MgO (001) substrates using thin Nb (Ta) buffer layers, and are found to be tensile strained (1%) and with slightly P-rich stoichiometry with respect to the bulk crystals. The resulting electronic structure exhibits topological surface states characteristic of a P-terminated surface and linear dispersion bands in agreement with the calculated band structure, and a Fermi-level shift of -0.2 eV with respect to the Weyl points. Consequently, the electronic transport is dominated by both holes and electrons with carrier mobilities close to 10^3 cm2/Vs at room-temperature. The growth of epitaxial thin films opens up the use of strain and controlled doping to access and tune the electronic structure of Weyl Semimetals on demand, paving the way for the rational design and fabrication of electronic devices ruled by topology.
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Submitted 27 September, 2019;
originally announced September 2019.
