Nanoelectromechanical control of spin-photon interfaces in a hybrid quantum system on chip
Authors:
Genevieve Clark,
Hamza Raniwala,
Matthew Koppa,
Kevin Chen,
Andrew Leenheer,
Matthew Zimmermann,
Mark Dong,
Linsen Li,
Y. Henry Wen,
Daniel Dominguez,
Matthew Trusheim,
Gerald Gilbert,
Matt Eichenfield,
Dirk Englund
Abstract:
Atom-like defects or color centers (CC's) in nanostructured diamond are a leading platform for optically linked quantum technologies, with recent advances including memory-enhanced quantum communication, multi-node quantum networks, and spin-mediated generation of photonic cluster states. Scaling to practically useful applications motivates architectures meeting the following criteria: C1 individu…
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Atom-like defects or color centers (CC's) in nanostructured diamond are a leading platform for optically linked quantum technologies, with recent advances including memory-enhanced quantum communication, multi-node quantum networks, and spin-mediated generation of photonic cluster states. Scaling to practically useful applications motivates architectures meeting the following criteria: C1 individual optical addressing of spin qubits; C2 frequency tuning of CC spin-dependent optical transitions; C3 coherent spin control in CC ground states; C4 active photon routing; C5 scalable manufacturability; and C6 low on-chip power dissipation for cryogenic operations. However, no architecture meeting C1-C6 has thus far been demonstrated. Here, we introduce a hybrid quantum system-on-chip (HQ-SoC) architecture that simultaneously achieves C1-C6. Key to this advance is the realization of piezoelectric strain control of diamond waveguide-coupled tin vacancy centers to meet C2 and C3, with ultra-low power dissipation necessary for C6. The DC response of our device allows emitter transition tuning by over 20 GHz, while the large frequency range (exceeding 2 GHz) enables low-power AC control. We show acoustic manipulation of integrated tin vacancy spins and estimate single-phonon coupling rates over 1 kHz in the resolved sideband regime. Combined with high-speed optical routing with negligible static hold power, this HQ-SoC platform opens the path to scalable single-qubit control with optically mediated entangling gates.
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Submitted 14 August, 2023;
originally announced August 2023.
High-Efficiency Three-Wave and Four-Wave Phonon Mixing Via Electron-Mediated Nonlinearity in Semiconductor-Piezoelectric Heterostructures
Authors:
Lisa Hackett,
Matthew Koppa,
Brandon Smith,
Michael Miller,
Steven Santillan,
Scott Weatherred,
Shawn Arterburn,
Thomas A. Friedmann,
Nils Otterstrom,
Matt Eichenfield
Abstract:
We show that phononic frequency conversion can be enhanced by orders of magnitude in piezoelectric systems by heterogeneous integration of high-mobility semiconductor films. A lithium niobate and indium gallium arsenide heterostructure is utilized to demonstrate efficient three-wave mixing processes at microwave frequencies, including 16% phononic power conversion efficiency for sum-frequency gene…
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We show that phononic frequency conversion can be enhanced by orders of magnitude in piezoelectric systems by heterogeneous integration of high-mobility semiconductor films. A lithium niobate and indium gallium arsenide heterostructure is utilized to demonstrate efficient three-wave mixing processes at microwave frequencies, including 16% phononic power conversion efficiency for sum-frequency generation and 1% phononic power conversion efficiency for difference-frequency generation, as well as the most efficient degenerate four-wave phononic mixing to date. We present a theoretical model that accurately predicts the sum-frequency and difference-frequency generation processes and we show that the conversion efficiency can be further enhanced by the application of semiconductor bias fields. Laser Doppler vibrometry is then applied to examine many three-wave and four-wave mixing processes simultaneously in the same device. Through the use of our developed model, we show that these nonlinearities can be enhanced far beyond what is demonstrated here by confining phonons to smaller dimensions in waveguides and optimizing semiconductor material properties or using 2D semiconductors.
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Submitted 2 May, 2023;
originally announced May 2023.
