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Showing 1–50 of 60 results for author: Koiller, B

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  1. arXiv:2301.06727  [pdf

    cs.ET physics.app-ph

    Roadmap for Unconventional Computing with Nanotechnology

    Authors: Giovanni Finocchio, Jean Anne C. Incorvia, Joseph S. Friedman, Qu Yang, Anna Giordano, Julie Grollier, Hyunsoo Yang, Florin Ciubotaru, Andrii Chumak, Azad J. Naeemi, Sorin D. Cotofana, Riccardo Tomasello, Christos Panagopoulos, Mario Carpentieri, Peng Lin, Gang Pan, J. Joshua Yang, Aida Todri-Sanial, Gabriele Boschetto, Kremena Makasheva, Vinod K. Sangwan, Amit Ranjan Trivedi, Mark C. Hersam, Kerem Y. Camsari, Peter L. McMahon , et al. (26 additional authors not shown)

    Abstract: In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w… ▽ More

    Submitted 27 February, 2024; v1 submitted 17 January, 2023; originally announced January 2023.

    Comments: 80 pages accepted in Nano Futures

    Journal ref: Nano Futures (2024)

  2. An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory

    Authors: D. Tjeertes, A. Vela, T. J. F. Verstijnen, E. G. Banfi, P. J. van Veldhoven, M. G. Menzes, R. B. Capaz, B. Koiller, P. M. Koenraad

    Abstract: Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functio… ▽ More

    Submitted 10 June, 2021; originally announced June 2021.

    Journal ref: Phys. Rev. B 104, 125433 (2021)

  3. Disordered Si:P nanostructures as switches and wires for nanodevices

    Authors: Amintor Dusko, Belita Koiller, Caio Lewenkopf

    Abstract: Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si structure sites. Disorder is expected to lead to electronic localization in one-dimensional (1D) - like structures. Experiments, however, report good transport proper… ▽ More

    Submitted 4 February, 2019; originally announced February 2019.

    Journal ref: Phys. Rev. B 99, 205422 (2019)

  4. arXiv:1810.12461  [pdf, other

    quant-ph cond-mat.mes-hall cond-mat.supr-con

    Stokes-anti-Stokes correlated photon properties akin to photonic Cooper pairs

    Authors: Filomeno S. de Aguiar Junior, Andre Saraiva, Marcelo F. Santos, Belita Koiller, Reinaldo de Melo e Souza, Arthur Patrocinio Pena, Raigna A. Silva, Carlos H. Monken, Ado Jorio

    Abstract: Photons interact with each other in condensed matter through the same mechanism that forms Cooper pairs in superconductors -- the exchange of virtual phonons [PRL 119, 193603 (2017)]. It is however unclear which consequences of this interaction will be observable and potentially lead to further analogy with superconductivity. We investigate the energy, momentum and production rate of correlate Sto… ▽ More

    Submitted 13 March, 2019; v1 submitted 29 October, 2018; originally announced October 2018.

    Comments: 12 pages, 3 figures. Editor's Suggestion in PRB. For the Supplementary material, please contact the authors. Original arXiv title: "Energy, momentum and production rate of photonic Cooper pairs"

    Journal ref: Phys. Rev. B 99, 100503 (2019)

  5. Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices

    Authors: Evelyn King, Joshua S. Schoenfield, M. J. Calderón, Belita Koiller, André Saraiva, Xuedong Hu, HongWen Jiang, Mark Friesen, S. N. Coppersmith

    Abstract: One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing acciden… ▽ More

    Submitted 14 April, 2020; v1 submitted 29 July, 2018; originally announced July 2018.

    Comments: 10 pages, 8 figures

    Journal ref: Phys. Rev. B 101, 155411 (2020)

  6. Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots

    Authors: L. A. Terrazos, E. Marcellina, Zhanning Wang, S. N. Coppersmith, Mark Friesen, A. R. Hamilton, Xuedong Hu, Belita Koiller, A. L. Saraiva, Dimitrie Culcer, Rodrigo B. Capaz

    Abstract: We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d… ▽ More

    Submitted 30 January, 2021; v1 submitted 27 March, 2018; originally announced March 2018.

    Comments: 1 pages

    Journal ref: Phys. Rev. B 103, 125201 (2021)

  7. arXiv:1801.02222  [pdf, other

    cond-mat.mes-hall

    2-dimensional semiconductors pave the way towards dopant based quantum computing

    Authors: J. C. Abadillo-Uriel, Belita Koiller, M. J. Calderón

    Abstract: Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts… ▽ More

    Submitted 7 January, 2018; originally announced January 2018.

    Comments: 5 pages, 3 figures

    Journal ref: Beilstein J. Nanotechnol. 9, 2668 (2018)

  8. Adequacy of Si:P Chains as Fermi-Hubbard Simulators

    Authors: Amintor Dusko, Alain Delgado, André Saraiva, Belita Koiller

    Abstract: The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by design. We investigate the suitability of these interacting electron systems as simulators of a fermionic extended Hubbard model on demand. We describe the singl… ▽ More

    Submitted 8 December, 2017; originally announced December 2017.

    Journal ref: npj Quantum Information 4, 1 (2018)

  9. Photonic Counterparts of Cooper Pairs

    Authors: Andre Saraiva, Filomeno S. de Aguiar Junior, Reinaldo de Melo e Souza, Arthur Patrocinio Pena, Carlos H. Monken, Marcelo F. Santos, Belita Koiller, Ado Jorio

    Abstract: The microscopic theory of superconductivity raised the disruptive idea that electrons couple through the elusive exchange of virtual phonons, overcoming the strong Coulomb repulsion to form Cooper pairs. Light is also known to interact with atomic vibrations, as for example in the Raman effect. We show that photon pairs exchange virtual vibrations in transparent media, leading to an effective phot… ▽ More

    Submitted 18 October, 2017; v1 submitted 13 September, 2017; originally announced September 2017.

    Comments: 5 pages, 3 figures, contact authors for supplemental material. Selected for "The Best of the Physics arXiv" from MIT Technology Review, week ending Sept. 23rd 2017

    Journal ref: Phys. Rev. Lett. 119, 193603 (2017)

  10. Donors in Ge as Qubits: Establishing Physical Attributes

    Authors: A. Baena, A. L. Saraiva, Marcos G. Menezes, Belita Koiller

    Abstract: Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the latest theoretical tools to the unique electronic structure of this material. We investigate basic properties of donors in Ge which are not known experimentall… ▽ More

    Submitted 12 January, 2017; v1 submitted 3 August, 2016; originally announced August 2016.

    Journal ref: EPL, 116 (2016) 20002

  11. Anderson Localization of Electrons in Silicon Donor Chains

    Authors: Amintor Dusko, Andre Saraiva, Belita Koiller

    Abstract: We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have shown that Ohm's law holds in some cases, in apparent defiance to the Anderson localization theory in one dimension. We investigate how valley interference affects the traditional theory of electronic structure of disordered… ▽ More

    Submitted 22 March, 2016; originally announced March 2016.

    Comments: 9 pages, 6 figures

    Journal ref: Phys. Rev. B 94, 115425 (2016)

  12. Donor Wavefunctions in Si Gauged by STM Images

    Authors: A. L. Saraiva, J. Salfi, J. Bocquel, B. Voisin, S. Rogge, Rodrigo B. Capaz, M. J. Calderón, Belita Koiller

    Abstract: The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-L… ▽ More

    Submitted 11 August, 2015; originally announced August 2015.

    Comments: 12 pages, 8 figures

    Journal ref: Phys. Rev. B 93, 045303 (2016)

  13. Theory of one and two donors in Silicon

    Authors: A. L. Saraiva, A. Baena, M. J. Calderón, Belita Koiller

    Abstract: We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell corre… ▽ More

    Submitted 30 July, 2014; originally announced July 2014.

    Comments: 13 pages, 6 figures

    Journal ref: J. Phys.: Condens. Matter 27, 154208 (2015)

  14. arXiv:1402.4552  [pdf, ps, other

    quant-ph cond-mat.other

    Dark State Adiabatic Passage with spin-one particles

    Authors: Andrew D. Greentree, Belita Koiller

    Abstract: Adiabatic transport of information is a widely invoked resource in connection with quantum information processing and distribution. The study of adiabatic transport via spin-half chains or clusters is standard in the literature, while in practice the true realisation of a completely isolated two-level quantum system is not achievable. We explore here, theoretically, the extension of spin-half chai… ▽ More

    Submitted 14 July, 2014; v1 submitted 18 February, 2014; originally announced February 2014.

    Comments: 8 pages, 6 figures (some in colour), comments welcome

    Journal ref: Phys. Rev. A 90, 012319 (2014)

  15. arXiv:1312.4589  [pdf, other

    cond-mat.mes-hall

    An Exchange-Coupled Donor Molecule in Silicon

    Authors: M. Fernando Gonzalez-Zalba, André Saraiva, Dominik Heiss, Maria J. Calderón, Belita Koiller, Andrew J. Ferguson

    Abstract: Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single imp… ▽ More

    Submitted 16 December, 2013; originally announced December 2013.

    Comments: 9 pages, 5 figures

    Journal ref: Nano Letters, 2014, 14, 5672

  16. Splitting Valleys in Si/SiO$_2$: Identification and Control of Interface States

    Authors: Amintor Dusko, A. L. Saraiva, Belita Koiller

    Abstract: Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we inspect here the spatial extent of these states into the Si and the barrier materials, as well as favorable conditions for its spontaneous formation. Our approac… ▽ More

    Submitted 21 May, 2014; v1 submitted 25 October, 2013; originally announced October 2013.

    Journal ref: Phys. Rev. B 89, 205307 (2014)

  17. arXiv:1306.6551  [pdf, ps, other

    cond-mat.stat-mech

    Driven flow with exclusion and transport in graphene-like structures

    Authors: R. B. Stinchcombe, S. L. A. de Queiroz, M. A. G. Cunha, Belita Koiller

    Abstract: The totally asymmetric simple exclusion process (TASEP), a well-known model in its strictly one-dimensional (chain) version, is generalized to cylinder (nanotube) and ribbon (nanoribbon) geometries. A mean-field theoretical description is given for very narrow ribbons ("necklaces"), and nanotubes. For specific configurations of bond transmissivity rates, and for a variety of boundary conditions, t… ▽ More

    Submitted 21 October, 2013; v1 submitted 27 June, 2013; originally announced June 2013.

    Comments: RevTeX, 13 pages, 9 figures (published version)

    Journal ref: Physical Review E 88, 042133 (2013)

  18. arXiv:1305.5818  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Quantum and classical correlations and Werner states in finite spin linear arrays

    Authors: P. R. Wells Jr., C. M. Chaves, J. A. e. Castro, Belita Koiller

    Abstract: Pairwise quantum correlations in the ground state of a N-spins antiferromagnetic chain described by the Heisenberg model with nearest neighbor exchange coupling are investigated. By varying a single coupling between two neighboring sites it is possible to drive spins from entangled to disentangled states, reversibly. For even N the two-spin density matrix is written in the form of a Werner state,… ▽ More

    Submitted 24 May, 2013; originally announced May 2013.

    Comments: arXiv admin note: text overlap with arXiv:1111.4513

  19. arXiv:1303.4932  [pdf, ps, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon

    Authors: Lijun Zhang, Jun-Wei Luo, A. L. Saraiva, Belita Koiller, Alex Zunger

    Abstract: Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin quantum computing in Si hosts is the orbital degeneracy of this material's conduction band, preventing the spin-1/2 states from being an isolated two-level system… ▽ More

    Submitted 20 March, 2013; originally announced March 2013.

    Comments: Supplementary Material posted as a separate arXiv file

  20. arXiv:1203.6245  [pdf, other

    cond-mat.mes-hall quant-ph

    Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface

    Authors: A. Baena, A. L. Saraiva, Belita Koiller, M. J. Calderón

    Abstract: We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor pra… ▽ More

    Submitted 8 August, 2012; v1 submitted 28 March, 2012; originally announced March 2012.

    Comments: 8 pages, including 5 figures. v2: Minor clarifying changes in the text and figures. Change of title. As published in PRB

    Journal ref: Phys. Rev. B 86, 035317 (2012)

  21. arXiv:1111.4513  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Quantum and classical correlations in antiferromagnetic chains and the realization of Werner states with spins

    Authors: P. R. Wells Jr., Belita Koiller

    Abstract: We investigate pairwise correlation properties of the ground state (GS) of finite antiferromagnetic (AFM) spin chains described by the Heisenberg model. The exchange coupling is restricted to nearest neighbor spins, and is constant $J_0$ except for a pair of neighboring sites, where the coupling $J_1$ may vary. We identify a rich variety of possible behaviors for different measures of pairwise (qu… ▽ More

    Submitted 18 November, 2011; originally announced November 2011.

    Comments: 8 pages, 7 figures

  22. Valley-based noise-resistant quantum computation using Si quantum dots

    Authors: Dimitrie Culcer, A. L. Saraiva, Belita Koiller, Xuedong Hu, S. Das Sarma

    Abstract: We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tu… ▽ More

    Submitted 27 March, 2012; v1 submitted 30 June, 2011; originally announced July 2011.

    Journal ref: Phys. Rev. Lett. 108, 126804 (2012)

  23. arXiv:1009.4842  [pdf, ps, other

    cond-mat.mes-hall

    Extended interface states enhance valley splitting in Si/SiO2

    Authors: A. L. Saraiva, Belita Koiller, Mark Friesen

    Abstract: Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive effect occurring at Si/SiO2 interfaces. By applying tight binding methods, we show that intrinsic interface states can hybridize with conventional valley states, le… ▽ More

    Submitted 27 September, 2010; v1 submitted 24 September, 2010; originally announced September 2010.

    Comments: 4 pages, 4 figures

    Journal ref: Phys. Rev. B 82, 245314 (2010)

  24. arXiv:1007.1000  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Hyperfine interactions in silicon quantum dots

    Authors: Lucy V. C. Assali, Helena M. Petrilli, Rodrigo B. Capaz, Belita Koiller, Xuedong Hu, S. Das Sarma

    Abstract: We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural S… ▽ More

    Submitted 7 May, 2011; v1 submitted 6 July, 2010; originally announced July 2010.

    Comments: 5 pages, 3 figures, 1 table. Published version

    Journal ref: Phys. Rev. B 83, 165301 (2011)

  25. arXiv:1006.3338  [pdf, ps, other

    cond-mat.mes-hall cond-mat.mtrl-sci

    Intervalley coupling for interface-bound electrons in silicon: An effective mass study

    Authors: A. L. Saraiva, M. J. Calderón, Rodrigo B. Capaz, Xuedong Hu, S. Das Sarma, Belita Koiller

    Abstract: Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nond… ▽ More

    Submitted 14 November, 2011; v1 submitted 16 June, 2010; originally announced June 2010.

    Comments: 11 pages, 3 figures, 2 tables

    Journal ref: Phys. Rev. B 84, 155320 (2011)

  26. arXiv:1005.1237  [pdf, ps, other

    cond-mat.mes-hall

    Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch

    Authors: M. J. Calderon, J. Verduijn, G. P. Lansbergen, G. C. Tettamanzi, S. Rogge, Belita Koiller

    Abstract: Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small chargi… ▽ More

    Submitted 7 May, 2010; originally announced May 2010.

    Comments: 7 pages, 6 figures

    Journal ref: Phys. Rev. B 82, 075317 (2010)

  27. arXiv:0901.4702  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

    Physical mechanisms of interface-mediated intervalley coupling in Si

    Authors: A. L. Saraiva, M. J. Calderón, Xuedong Hu, S. Das Sarma, Belita Koiller

    Abstract: The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that pro… ▽ More

    Submitted 31 August, 2009; v1 submitted 29 January, 2009; originally announced January 2009.

    Comments: 4 pages, revised version

    Journal ref: Phys. Rev. B 80, 081305(R) (2009)

  28. arXiv:0901.4317  [pdf, ps, other

    cond-mat.str-el cond-mat.stat-mech

    Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains

    Authors: C. M. Chaves, Thereza Paiva, J. d'Albuquerque e Castro, Belita Koiller

    Abstract: The temperature dependence of the static magnetic susceptibility of exchange-disordered antiferromagnetic Heisenberg spin-1/2 finite chains with an odd number of spins is investigated as a function of size and type of disorder in the exchange coupling. Two models for the exchange disorder distribution are considered. At sufficiently low temperatures each chain behaves like an isolated spin-1/2 p… ▽ More

    Submitted 29 January, 2009; v1 submitted 27 January, 2009; originally announced January 2009.

    Comments: 8 pages, 3 figures

    Journal ref: Applied Physics Letters 94,032505,2009

  29. arXiv:0811.3865  [pdf, other

    cond-mat.mes-hall quant-ph

    Quantum computation with doped silicon cavities

    Authors: M. Abanto, L. Davidovich, Belita Koiller, R. L. de Matos Filho

    Abstract: We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processes already demonstrated in ion traps and other atomic systems. Our scheme considerably simplifies the implementation of the building blocks for the successful operation of silicon-based solid-state quantum computers, in… ▽ More

    Submitted 24 November, 2008; originally announced November 2008.

  30. arXiv:0809.3660  [pdf, ps, other

    cond-mat.mes-hall

    Quantum control and manipulation of donor electrons in Si-based quantum computing

    Authors: M. J. Calderon, A. Saraiva, B. Koiller, S. Das Sarma

    Abstract: Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues… ▽ More

    Submitted 21 July, 2009; v1 submitted 22 September, 2008; originally announced September 2008.

    Comments: Invited Presentation at the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro - Brazil, Jul 27-Aug 1, 2008. A paragraph added to the conclusions, 4 new references

    Journal ref: Journal of Applied Physics 105, 122410 (2009)

  31. arXiv:0712.1823  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Valley interference effects on a donor electron close to a Si/SiO2 interface

    Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

    Abstract: We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much… ▽ More

    Submitted 11 December, 2007; originally announced December 2007.

    Comments: 7 pages, 5 figures

    Journal ref: Phys. Rev. B 77, 155302 (2008)

  32. arXiv:0706.3354  [pdf, ps, other

    cond-mat.other cond-mat.mes-hall quant-ph

    Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures

    Authors: A. L. Saraiva, M. J. Calderon, Belita Koiller

    Abstract: We calculate the exchange coupling J between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the double-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly… ▽ More

    Submitted 28 November, 2007; v1 submitted 22 June, 2007; originally announced June 2007.

    Comments: 5 pages, 4 Postscript figures, to be published in Phys. Rev. B

    Journal ref: Phys. Rev. B 76, 233302 (2007)

  33. Conduction band tight-binding description for silicon applied to phosphorous donors

    Authors: A. S. Martins, Timothy B. Boykin, Gerhard Klimeck, Belita Koiller

    Abstract: A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectra… ▽ More

    Submitted 11 January, 2007; v1 submitted 10 December, 2006; originally announced December 2006.

    Comments: 4 pages, 3 figures

    Journal ref: Phys. Rev. B 72, 193204 (2005)

  34. arXiv:cond-mat/0612093  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    External field control of donor electron exchange at the Si/SiO2 interface

    Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

    Abstract: We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in… ▽ More

    Submitted 19 March, 2007; v1 submitted 4 December, 2006; originally announced December 2006.

    Comments: 11 pages, 15 figures. Changes in Eq. 24 plus minor typos

    Journal ref: Phys. Rev. B 75, 125311 (2007)

  35. arXiv:cond-mat/0610089  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Single electron spin and its coherence in Si quantum computer architecture

    Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

    Abstract: The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited st… ▽ More

    Submitted 3 October, 2006; originally announced October 2006.

    Comments: 4 pages, 3 figures

    Journal ref: Physical Review B 75, 161304(R) (2007).

  36. arXiv:cond-mat/0602597  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Magnetic field-assisted manipulation and entanglement of Si spin qubits

    Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

    Abstract: Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that su… ▽ More

    Submitted 4 August, 2006; v1 submitted 24 February, 2006; originally announced February 2006.

    Comments: 4 pages, 4 figures. 1 ref and 1 footnote added

    Journal ref: Phys. Rev. B 74, 081302(R) (2006)

  37. arXiv:cond-mat/0512321  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach

    Authors: M. J. Calderon, Belita Koiller, S. Das Sarma

    Abstract: The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and a systematic analysis for the source of inaccuracies in the HL approach is presented. For the strongly confining coulombic atomic potentials in the H2 molecu… ▽ More

    Submitted 10 July, 2006; v1 submitted 14 December, 2005; originally announced December 2005.

    Comments: 6 pages, 3 figures. As accepted in Physical Review B

    Journal ref: Physical Review B 74, 045310 (2006)

  38. arXiv:cond-mat/0510520  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall quant-ph

    Electric field driven donor-based charge qubits in semiconductors

    Authors: Belita Koiller, Xuedong Hu, S. Das Sarma

    Abstract: We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and h… ▽ More

    Submitted 19 October, 2005; originally announced October 2005.

    Journal ref: Pys. Rev. B 73, 045319 (2006)

  39. arXiv:cond-mat/0510261  [pdf, ps, other

    cond-mat.mtrl-sci

    Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study

    Authors: R. Santoprete, P. Kratzer, M. Scheffler, R. B. Capaz, Belita Koiller

    Abstract: We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations wh… ▽ More

    Submitted 11 October, 2005; originally announced October 2005.

    Comments: 3 figures

  40. arXiv:cond-mat/0508647  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Quantum control of donor electrons at the Si-SiO2 interface

    Authors: M. J. Calderon, Belita Koiller, Xuedong Hu, S. Das Sarma

    Abstract: Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the dist… ▽ More

    Submitted 15 February, 2006; v1 submitted 26 August, 2005; originally announced August 2005.

    Comments: Version accepted for publication in PRL

    Journal ref: Phys. Rev. Lett. 96, 096802 (2006)

  41. arXiv:cond-mat/0507246  [pdf, ps, other

    cond-mat.stat-mech cond-mat.mes-hall

    The magnetic susceptibility of exchange-disordered antiferromagnetic finite chains

    Authors: C. M. Chaves, Thereza Paiva, J. d'Albuquerque e Castro, F. Hebert, R. T. Scalettar, G. G. Batrouni, Belita Koiller

    Abstract: The low-temperature behavior of the static magnetic susceptibility $χ(T)$ of exchange-disordered antiferromagnetic spin chains is investigated. It is shown that for a relatively small and even number of spins in the chain, two exchange distributions which are expected to occur in nanochains of P donors in silicon lead to qualitatively distinct behaviors of the low-temperature susceptibility. As… ▽ More

    Submitted 10 February, 2006; v1 submitted 11 July, 2005; originally announced July 2005.

    Journal ref: Phys. Rev. B 73, 104410 (2006)

  42. arXiv:cond-mat/0505169  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Silicon-based spin and charge quantum computation

    Authors: Belita Koiller, Xuedong Hu, R. B. Capaz, A. S. Martins, S. Das Sarma

    Abstract: Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin co… ▽ More

    Submitted 6 May, 2005; originally announced May 2005.

    Comments: Review paper (invited) - to appear in Annals of the Brazilian Academy of Sciences

    Journal ref: An. Acad. Bras. Cienc. 77 (2), 201-222 (2005)

  43. arXiv:cond-mat/0412340  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence

    Authors: Xuedong Hu, Belita Koiller, S. Das Sarma

    Abstract: We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of… ▽ More

    Submitted 13 December, 2004; originally announced December 2004.

    Comments: 10 pages, 3 figures

    Journal ref: Phys. Rev. B 71, 235332 (2005).

  44. arXiv:cond-mat/0411755  [pdf, ps, other

    cond-mat.mes-hall quant-ph

    Spin quantum computation in silicon nanostructures

    Authors: S. Das Sarma, Rogerio de Sousa, Xuedong Hu, Belita Koiller

    Abstract: Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spi… ▽ More

    Submitted 30 November, 2004; originally announced November 2004.

    Comments: 14 pages. Review article submitted to Solid State Communications

    Journal ref: Solid State Communications 133, 737 (2005).

  45. arXiv:cond-mat/0407183  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Silicon-based spin quantum computation and the shallow donor exchange gate

    Authors: Belita Koiller, R. B. Capaz, X. Hu, S. Das Sarma

    Abstract: Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideally suited candidates for qubits in such proposals, where shallow d… ▽ More

    Submitted 7 July, 2004; originally announced July 2004.

    Comments: Submitted to the proceedings of the 27th International Conference on the Physics of Semiconductors

    Journal ref: 27th International Conference on the Physics of Semiconductors, AIP Conference Proceedings 772, Ed: J. Menéndez and C. G. Van de Walle, pp. 1441-1444, (2005).

  46. arXiv:cond-mat/0402266  [pdf, ps, other

    cond-mat.mes-hall cond-mat.mtrl-sci quant-ph

    Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach

    Authors: Belita Koiller, R. B. Capaz, Xuedong Hu, S. Das Sarma

    Abstract: Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si co… ▽ More

    Submitted 26 November, 2004; v1 submitted 10 February, 2004; originally announced February 2004.

    Comments: published version

    Journal ref: Phys. Rev. B 70, 115207 (2004)

  47. Electric Field Control of Shallow Donor Impurities in Silicon

    Authors: A. S. Martins, R. B. Capaz, Belita Koiller

    Abstract: We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the… ▽ More

    Submitted 27 August, 2003; originally announced August 2003.

    Comments: 18 pages, 6 figures, submitted to PRB

    Journal ref: Phys. Rev. B 69, 085320 (2004)

  48. Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots

    Authors: R. Santoprete, Belita Koiller, R. B. Capaz, P. Kratzer, Q. K. K. Liu, M. Scheffler

    Abstract: We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit coupling. Results for the model system of capped pyramid-shaped InAs QD's in GaAs, with supercells containing $10^{5}$ atoms are presented and compared with… ▽ More

    Submitted 25 September, 2003; v1 submitted 5 June, 2003; originally announced June 2003.

    Comments: 22 pages, 7 figures, submitted to Phys. Rev. B (in press) In the latest version, added Figs. 3 and 4, modified Fig. 5, Tables I and II,.and added new references

    Journal ref: Phys. Rev. B 68, 235311 (2003)

  49. arXiv:cond-mat/0212011   

    cond-mat.mes-hall quant-ph

    Silicon conduction-band effects on shallow donor wavefunctions and donor-pair exchange: An {\it ab initio} theory

    Authors: R. B. Capaz, Belita Koiller, Xuedong Hu, S. Das Sarma

    Abstract: This paper has been withdrawn by the authors. A more complete treatment of the bandstructure effects is forthcoming.

    Submitted 17 December, 2002; v1 submitted 1 December, 2002; originally announced December 2002.

    Comments: Manuscript withdrawn by the authors

  50. Electromechanical Effects in Carbon Nanotubes

    Authors: M. Verissimo-Alves, Belita Koiller, H. Chacham, R. B. Capaz

    Abstract: We perform ab initio calculations of charged graphene and single-wall carbon nanotubes (CNTs). A wealth of electromechanical behaviors is obtained: (1) Both nanotubes and graphene expand upon electron injection. (2) Upon hole injection, metallic nanotubes and graphene display a non-monotonic behavior: Upon increasing hole densities, the lattice constant initially contracts, reaches a minimum, an… ▽ More

    Submitted 18 November, 2002; originally announced November 2002.

    Comments: Submitted to Physical Review Letters on May 23rd 2002

    Journal ref: Physical Review B 67 (16): Art. No. 161401 APR 15 2003