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Roadmap for Unconventional Computing with Nanotechnology
Authors:
Giovanni Finocchio,
Jean Anne C. Incorvia,
Joseph S. Friedman,
Qu Yang,
Anna Giordano,
Julie Grollier,
Hyunsoo Yang,
Florin Ciubotaru,
Andrii Chumak,
Azad J. Naeemi,
Sorin D. Cotofana,
Riccardo Tomasello,
Christos Panagopoulos,
Mario Carpentieri,
Peng Lin,
Gang Pan,
J. Joshua Yang,
Aida Todri-Sanial,
Gabriele Boschetto,
Kremena Makasheva,
Vinod K. Sangwan,
Amit Ranjan Trivedi,
Mark C. Hersam,
Kerem Y. Camsari,
Peter L. McMahon
, et al. (26 additional authors not shown)
Abstract:
In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing w…
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In the "Beyond Moore's Law" era, with increasing edge intelligence, domain-specific computing embracing unconventional approaches will become increasingly prevalent. At the same time, adopting a variety of nanotechnologies will offer benefits in energy cost, computational speed, reduced footprint, cyber resilience, and processing power. The time is ripe for a roadmap for unconventional computing with nanotechnologies to guide future research, and this collection aims to fill that need. The authors provide a comprehensive roadmap for neuromorphic computing using electron spins, memristive devices, two-dimensional nanomaterials, nanomagnets, and various dynamical systems. They also address other paradigms such as Ising machines, Bayesian inference engines, probabilistic computing with p-bits, processing in memory, quantum memories and algorithms, computing with skyrmions and spin waves, and brain-inspired computing for incremental learning and problem-solving in severely resource-constrained environments. These approaches have advantages over traditional Boolean computing based on von Neumann architecture. As the computational requirements for artificial intelligence grow 50 times faster than Moore's Law for electronics, more unconventional approaches to computing and signal processing will appear on the horizon, and this roadmap will help identify future needs and challenges. In a very fertile field, experts in the field aim to present some of the dominant and most promising technologies for unconventional computing that will be around for some time to come. Within a holistic approach, the goal is to provide pathways for solidifying the field and guiding future impactful discoveries.
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Submitted 27 February, 2024; v1 submitted 17 January, 2023;
originally announced January 2023.
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An atomic scale study of Si-doped AlAs by cross-sectional scanning tunneling microscopy and density functional theory
Authors:
D. Tjeertes,
A. Vela,
T. J. F. Verstijnen,
E. G. Banfi,
P. J. van Veldhoven,
M. G. Menzes,
R. B. Capaz,
B. Koiller,
P. M. Koenraad
Abstract:
Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functio…
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Silicon (Si) donors in GaAs have been the topic of extensive studies since Si is the most common and well understood n-type dopant in III-V semiconductor devices and substrates. The indirect bandgap of AlAs compared to the direct one of GaAs leads to interesting effects when introducing Si dopants. Here we present a study of cross-sectional scanning tunneling microscopy (X-STM) and density functional theory (DFT) calculations to study Si donors in AlAs at the atomic scale. Based on their crystal symmetry and contrast strengths, we identify Si donors up to four layers below the (110) surface of AlAs. Interestingly, their short-range local density of states (LDOS) is very similar to Si atoms in the (110) surface of GaAs. Additionally we show high-resolution images of Si donors in all these layers. For empty state imaging, the experimental and simulated STM images based on DFT show excellent agreement for Si donor up to two layers below the surface.
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Submitted 10 June, 2021;
originally announced June 2021.
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Disordered Si:P nanostructures as switches and wires for nanodevices
Authors:
Amintor Dusko,
Belita Koiller,
Caio Lewenkopf
Abstract:
Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si structure sites. Disorder is expected to lead to electronic localization in one-dimensional (1D) - like structures. Experiments, however, report good transport proper…
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Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si structure sites. Disorder is expected to lead to electronic localization in one-dimensional (1D) - like structures. Experiments, however, report good transport properties in quasi-1D P nanoribbons. We investigate theoretically their electronic properties using an effective single-particle approach based on a linear combination of donor orbitals (LCDO), with a basis of six orbitals per donor site, thus keeping the ground state donor orbitals' oscillatory behavior due to interference among the states at the Si conduction band minima. Our model for the P positioning errors accounts for the presently achievable placement precision allowing to study the localization crossover. In addition, we show that a gate-like potential may control its conductance and localization length, suggesting the possible use of Si:P nanostructures as elements of quantum devices, such as nanoswitches and nanowires.
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Submitted 4 February, 2019;
originally announced February 2019.
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Stokes-anti-Stokes correlated photon properties akin to photonic Cooper pairs
Authors:
Filomeno S. de Aguiar Junior,
Andre Saraiva,
Marcelo F. Santos,
Belita Koiller,
Reinaldo de Melo e Souza,
Arthur Patrocinio Pena,
Raigna A. Silva,
Carlos H. Monken,
Ado Jorio
Abstract:
Photons interact with each other in condensed matter through the same mechanism that forms Cooper pairs in superconductors -- the exchange of virtual phonons [PRL 119, 193603 (2017)]. It is however unclear which consequences of this interaction will be observable and potentially lead to further analogy with superconductivity. We investigate the energy, momentum and production rate of correlate Sto…
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Photons interact with each other in condensed matter through the same mechanism that forms Cooper pairs in superconductors -- the exchange of virtual phonons [PRL 119, 193603 (2017)]. It is however unclear which consequences of this interaction will be observable and potentially lead to further analogy with superconductivity. We investigate the energy, momentum and production rate of correlate Stokes-anti-Stokes (SaS) photons in diamond and other transparent media, experiencing properties akin to those of electronic Cooper pairs. The rate of correlated SaS production depends on the energy shifts of the pair, which in the BCS theory determines whether there should be an attractive or repulsive interaction. With this view, we only observe correlated SaS in the case of attractive interactions. While traditional photon-phonon collisions scatter light in all directions, the correlated SaS photons follow the same path as the noninteracting laser. The observed correlated SaS photon pairs are rare, but our model indicates paths to achieve higher interaction energies.
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Submitted 13 March, 2019; v1 submitted 29 October, 2018;
originally announced October 2018.
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Lifting of Spin Blockade by Charged Impurities in Si-MOS Double Quantum Dot Devices
Authors:
Evelyn King,
Joshua S. Schoenfield,
M. J. Calderón,
Belita Koiller,
André Saraiva,
Xuedong Hu,
HongWen Jiang,
Mark Friesen,
S. N. Coppersmith
Abstract:
One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing acciden…
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One obstacle that has slowed the development of electrically gated metal-oxide-semiconductor (MOS) singlet-triplet qubits is the frequent lack of observed spin blockade, even in samples with large singlet-triplet energy splittings. We present theoretical and experimental evidence that the cause of this problem in MOS double quantum dots is the stray positive charges in the oxide inducing accidental levels near the device's active region that allow spin blockade lifting. We also present evidence that these effects can be mitigated by device design modifications, such as overlapping gates.
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Submitted 14 April, 2020; v1 submitted 29 July, 2018;
originally announced July 2018.
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Theory of Hole-Spin Qubits in Strained Germanium Quantum Dots
Authors:
L. A. Terrazos,
E. Marcellina,
Zhanning Wang,
S. N. Coppersmith,
Mark Friesen,
A. R. Hamilton,
Xuedong Hu,
Belita Koiller,
A. L. Saraiva,
Dimitrie Culcer,
Rodrigo B. Capaz
Abstract:
We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger d…
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We theoretically investigate the properties of holes in a Si$_{x}$Ge$_{1-x}$/Ge/ Si$_{x}$Ge$_{1-x}$ quantum well in a perpendicular magnetic field that make them advantageous as qubits, including a large ($>$100~meV) intrinsic splitting between the light and heavy hole bands, a very light ($\sim$0.05$\, m_0$) in-plane effective mass, consistent with higher mobilities and tunnel rates, and larger dot sizes that could ameliorate constraints on device fabrication. Compared to electrons in quantum dots, hole qubits do not suffer from the presence of nearby quantum levels (e.g., valley states) that can compete with spins as qubits. The strong spin-orbit coupling in Ge quantum wells may be harnessed to implement electric-dipole spin resonance, leading to gate times of several nanoseconds for single-qubit rotations. The microscopic mechanism of this spin-orbit coupling is discussed, along with its implications for quantum gates based on electric-dipole spin resonance, stressing the importance of coupling terms that arise from the underlying cubic crystal field. Our results provide a theoretical foundation for recent experimental advances in Ge hole-spin qubits.
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Submitted 30 January, 2021; v1 submitted 27 March, 2018;
originally announced March 2018.
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2-dimensional semiconductors pave the way towards dopant based quantum computing
Authors:
J. C. Abadillo-Uriel,
Belita Koiller,
M. J. Calderón
Abstract:
Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts…
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Since the 1998 proposal to build a quantum computer using dopants in semiconductors as qubits, much progress has been achieved on semiconductors nano fabrication and control of charge and spins in single dopants. However, an important problem remains, which is the control at the atomic scale of the dopants positioning. We propose to circumvent this problem by using 2 dimensional materials as hosts. Since the first isolation of graphene in 2004, the number of new 2D materials with favorable properties for electronics has been growing. Dopants in 2 dimensional systems are more tightly bound and potentially easier to position and manipulate. Considering the properties of currently available 2D materials, we access the feasibility of such proposal in terms of the manipulability of isolated dopants (for single qubit operations) and dopant pairs (for two qubit operations). Our results indicate that a wide variety of 2D materials may perform at least as well as the currently studied bulk host for donor qubits.
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Submitted 7 January, 2018;
originally announced January 2018.
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Adequacy of Si:P Chains as Fermi-Hubbard Simulators
Authors:
Amintor Dusko,
Alain Delgado,
André Saraiva,
Belita Koiller
Abstract:
The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by design. We investigate the suitability of these interacting electron systems as simulators of a fermionic extended Hubbard model on demand. We describe the singl…
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The challenge of simulating many-body models with analogue physical systems requires both experimental precision and very low operational temperatures. Atomically precise placement of dopants in Si permits the construction of nanowires by design. We investigate the suitability of these interacting electron systems as simulators of a fermionic extended Hubbard model on demand. We describe the single particle wavefunctions as a Linear Combination of Dopant Orbitals (LCDO). The electronic states are calculated within configuration interaction (CI). Due to the peculiar oscillatory behavior of each basis orbital, properties of these chains are strongly affected by the interdonor distance $R_0$, in a non-monotonic way. Ground state (T=0K) properties such as charge and spin correlations are shown to remain robust under temperatures up to 4K for specific values of $R_0$. The robustness of the model against disorder is also tested, allowing some fluctuation of the placement site around the target position. We suggest that finite donor chains in Si may serve as an analog simulator for strongly correlated model Hamiltonians. This simulator is, in many ways, complementary to those based on cold atoms in optical lattices---the trade-off between the tunability achievable in the latter and the survival of correlation at higher operation temperatures for the former suggests that both technologies are applicable for different regimes.
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Submitted 8 December, 2017;
originally announced December 2017.
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Photonic Counterparts of Cooper Pairs
Authors:
Andre Saraiva,
Filomeno S. de Aguiar Junior,
Reinaldo de Melo e Souza,
Arthur Patrocinio Pena,
Carlos H. Monken,
Marcelo F. Santos,
Belita Koiller,
Ado Jorio
Abstract:
The microscopic theory of superconductivity raised the disruptive idea that electrons couple through the elusive exchange of virtual phonons, overcoming the strong Coulomb repulsion to form Cooper pairs. Light is also known to interact with atomic vibrations, as for example in the Raman effect. We show that photon pairs exchange virtual vibrations in transparent media, leading to an effective phot…
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The microscopic theory of superconductivity raised the disruptive idea that electrons couple through the elusive exchange of virtual phonons, overcoming the strong Coulomb repulsion to form Cooper pairs. Light is also known to interact with atomic vibrations, as for example in the Raman effect. We show that photon pairs exchange virtual vibrations in transparent media, leading to an effective photon-photon interaction identical to that for electrons in BCS theory of supercondutivity, in spite of the fact that photons are bosons. In this scenario, photons may exchange energy without matching a quantum of vibration of the medium. As a result, pair correlations for photons scattered away from the Raman resonances are expected to be enhanced. Experimental demonstration of this effect is provided here by time correlated Raman measurements in different media. The experimental data confirm our theoretical interpretation of a photonic Cooper pairing, without the need for any fitting parameters.
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Submitted 18 October, 2017; v1 submitted 13 September, 2017;
originally announced September 2017.
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Donors in Ge as Qubits: Establishing Physical Attributes
Authors:
A. Baena,
A. L. Saraiva,
Marcos G. Menezes,
Belita Koiller
Abstract:
Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the latest theoretical tools to the unique electronic structure of this material. We investigate basic properties of donors in Ge which are not known experimentall…
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Quantum electronic devices at the single impurity level demand an understanding of the physical attributes of dopants at an unprecedented accuracy. Germanium-based technologies have been developed recently, creating a necessity to adapt the latest theoretical tools to the unique electronic structure of this material. We investigate basic properties of donors in Ge which are not known experimentally, but are indispensable for qubit implementations. Our approach provides a description of the wavefunction at multiscale, associating microscopic information from Density Functional Theory and envelope functions from state of the art multivalley effective mass calculations, including a central cell correction designed to reproduce the energetics of all group V donor species (P, As, Sb and Bi). With this formalism, we predict the binding energies of negatively ionized donors (D- state). Furthermore, we investigate the signatures of buried donors to be expected from Scanning Tunneling Microscopy (STM). The naive assumption that attributes of donor electrons in other semiconductors may be extrapolated to Ge is shown to fail, similar to earlier attempts to recreate in Si qubits designed for GaAs. Our results suggest that the mature techniques available for qubit realizations may be adapted to germanium to some extent, but the peculiarities of the Ge band structure will demand new ideas for fabrication and control.
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Submitted 12 January, 2017; v1 submitted 3 August, 2016;
originally announced August 2016.
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Anderson Localization of Electrons in Silicon Donor Chains
Authors:
Amintor Dusko,
Andre Saraiva,
Belita Koiller
Abstract:
We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have shown that Ohm's law holds in some cases, in apparent defiance to the Anderson localization theory in one dimension. We investigate how valley interference affects the traditional theory of electronic structure of disordered…
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We construct a model to study the localization properties of nanowires of dopants in silicon (Si) fabricated by precise ionic implantation or STM lithography. Experiments have shown that Ohm's law holds in some cases, in apparent defiance to the Anderson localization theory in one dimension. We investigate how valley interference affects the traditional theory of electronic structure of disordered systems. Each isolated donor orbital is realistically described by multi-valley effective mass theory (MV-EMT). We extend this model to describe chains of donors as a linear combination of dopant orbitals. Disorder in donor positioning is taken into account, leading to an intricate disorder distribution of hoppings between nearest neighbor donor sites (donor-donor tunnel coupling) -- an effect of valley interference. The localization length is obtained for phosphorous (P) donor chains from a transfer matrix approach and is further compared with the chain length. We quantitatively determine the impact of uncertainties $δR$ in the implantation position relative to a target and also compare our results with those obtained without valley interference. We analyse systematically the aimed inter-donor separation dependence ($R_0$) and show that fairly diluted donor chains ($R_0=7.7$ nm) may be as long as 100 nm before the effective onset of Anderson localization, as long as the positioning error is under a lattice parameter ($δR <0.543$ nm).
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Submitted 22 March, 2016;
originally announced March 2016.
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Donor Wavefunctions in Si Gauged by STM Images
Authors:
A. L. Saraiva,
J. Salfi,
J. Bocquel,
B. Voisin,
S. Rogge,
Rodrigo B. Capaz,
M. J. Calderón,
Belita Koiller
Abstract:
The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-L…
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The triumph of effective mass theory in describing the energy spectrum of dopants does not guarantee that the model wavefunctions will withstand an experimental test. Such wavefunctions have recently been probed by scanning tunneling spectroscopy, revealing localized patterns of resonantly enhanced tunneling currents. We show that the shape of the conducting splotches resemble a cut through Kohn-Luttinger (KL) hydrogenic envelopes, which modulate the interfering Bloch states of conduction electrons. All the non-monotonic features of the current profile are consistent with the charge density fluctuations observed between successive {001} atomic planes, including a counterintuitive reduction of the symmetry - a heritage of the lowered point group symmetry at these planes. A model-independent analysis of the diffraction figure constrains the value of the electron wavevector to $k_0 = (0.82 \pm 0.03)(2π/a_{Si})$. Unlike prior measurements, averaged over a sizeable density of electrons, this estimate is obtained directly from isolated electrons. We further investigate the model-specific anisotropy of the wave function envelope, related to the effective mass anisotropy. This anisotropy appears in the KL variational wave function envelope as the ratio between Bohr radii b=a. We demonstrate that the central cell corrected estimates for this ratio are encouragingly accurate, leading to the conclusion that the KL theory is a valid model not only for energies but for wavefunctions as well.
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Submitted 11 August, 2015;
originally announced August 2015.
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Theory of one and two donors in Silicon
Authors:
A. L. Saraiva,
A. Baena,
M. J. Calderón,
Belita Koiller
Abstract:
We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell corre…
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We provide here a roadmap for modeling silicon nano-devices with one or two group V donors (D). We discuss systems containing one or two electrons, that is, D^0, D^-, D_2^+ and D_2^0 centers. The impact of different levels of approximation is discussed. The most accurate instances -- for which we provide quantitative results -- are within multivalley effective mass including the central cell correction and a configuration interaction account of the electron-electron correlations. We also derive insightful, yet less accurate, analytical approximations and discuss their validity and limitations -- in particular, for a donor pair, we discuss the single orbital LCAO method, the Huckel approximation and the Hubbard model. Finally we discuss the connection between these results and recent experiments on few dopant devices.
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Submitted 30 July, 2014;
originally announced July 2014.
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Dark State Adiabatic Passage with spin-one particles
Authors:
Andrew D. Greentree,
Belita Koiller
Abstract:
Adiabatic transport of information is a widely invoked resource in connection with quantum information processing and distribution. The study of adiabatic transport via spin-half chains or clusters is standard in the literature, while in practice the true realisation of a completely isolated two-level quantum system is not achievable. We explore here, theoretically, the extension of spin-half chai…
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Adiabatic transport of information is a widely invoked resource in connection with quantum information processing and distribution. The study of adiabatic transport via spin-half chains or clusters is standard in the literature, while in practice the true realisation of a completely isolated two-level quantum system is not achievable. We explore here, theoretically, the extension of spin-half chain models to higher spins. Considering arrangements of three spin-one particles, we show that adiabatic transport, specifically a generalisation of the Dark State Adiabatic Passage procedure, is applicable to spin-one systems. We thus demonstrate a qutrit state transfer protocol. We discuss possible ways to physically implement this protocol, considering quantum dot and nitrogen-vacancy implementations.
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Submitted 14 July, 2014; v1 submitted 18 February, 2014;
originally announced February 2014.
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An Exchange-Coupled Donor Molecule in Silicon
Authors:
M. Fernando Gonzalez-Zalba,
André Saraiva,
Dominik Heiss,
Maria J. Calderón,
Belita Koiller,
Andrew J. Ferguson
Abstract:
Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single imp…
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Donors in silicon, conceptually described as hydrogen atom analogues in a semiconductor environment, have become a key ingredient of many "More-than-Moore" proposals such as quantum information processing [1-5] and single-dopant electronics [6, 7]. The level of maturity this field has reached has enabled the fabrication and demonstration of transistors that base their functionality on a single impurity atom [8, 9] allowing the predicted single-donor energy spectrum to be checked by an electrical transport measurement. Generalizing the concept, a donor pair may behave as a hydrogen molecule analogue. However, the molecular quantum mechanical solution only takes us so far and a detailed understanding of the electronic structure of these molecular systems is a challenge to be overcome. Here we present a combined experimental-theoretical demonstration of the energy spectrum of a strongly interacting donor pair in the channel of a silicon nanotransistor and show the first observation of measurable two-donor exchange coupling. Moreover, the analysis of the three charge states of the pair shows evidence of a simultaneous enhancement of the binding and charging energies with respect to the single donor spectrum. The measured data are accurately matched by results obtained in an effective mass theory incorporating the Bloch states multiplicity in Si, a central cell corrected donor potential and a full configuration interaction treatment of the 2-electron spectrum. Our data describe the basic 2-qubit entanglement element in Kane's quantum processing scheme [1], namely exchange coupling, implemented here in the range of molecular hybridization.
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Submitted 16 December, 2013;
originally announced December 2013.
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Splitting Valleys in Si/SiO$_2$: Identification and Control of Interface States
Authors:
Amintor Dusko,
A. L. Saraiva,
Belita Koiller
Abstract:
Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we inspect here the spatial extent of these states into the Si and the barrier materials, as well as favorable conditions for its spontaneous formation. Our approac…
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Interface states in a silicon/barrier junction break the silicon valley degeneracy near the interface, a desirable feature for some Si quantum electronics applications. Within a minimal multivalley tight-binding model in one dimension, we inspect here the spatial extent of these states into the Si and the barrier materials, as well as favorable conditions for its spontaneous formation. Our approach---based on Green's-function renormalization-decimation techniques---is asymptotically exact for the infinite chain and shows the formation of these states regardless of whether or not a confining electric field is applied. The renormalization language naturally leads to the central role played by the chemical bond of the atoms immediately across the interface. In the adopted decimation procedure, the convergence rate to a fixed point directly relates the valley splitting and the spread of the wave function, consequently connecting the splitting to geometrical experimental parameters such as the capacitance of a two-dimensional electron gas---explicitly calculated here. This should serve as a probe to identify such states as a mechanism for enhanced valley splitting.
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Submitted 21 May, 2014; v1 submitted 25 October, 2013;
originally announced October 2013.
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Driven flow with exclusion and transport in graphene-like structures
Authors:
R. B. Stinchcombe,
S. L. A. de Queiroz,
M. A. G. Cunha,
Belita Koiller
Abstract:
The totally asymmetric simple exclusion process (TASEP), a well-known model in its strictly one-dimensional (chain) version, is generalized to cylinder (nanotube) and ribbon (nanoribbon) geometries. A mean-field theoretical description is given for very narrow ribbons ("necklaces"), and nanotubes. For specific configurations of bond transmissivity rates, and for a variety of boundary conditions, t…
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The totally asymmetric simple exclusion process (TASEP), a well-known model in its strictly one-dimensional (chain) version, is generalized to cylinder (nanotube) and ribbon (nanoribbon) geometries. A mean-field theoretical description is given for very narrow ribbons ("necklaces"), and nanotubes. For specific configurations of bond transmissivity rates, and for a variety of boundary conditions, theory predicts equivalent steady state behavior between (sublattices on) these structures and chains. This is verified by numerical simulations, to excellent accuracy, by evaluating steady-state currents. We also numerically treat ribbons of general width. We examine the adequacy of this model to the description of electronic transport in carbon nanotubes and nanoribbons, or specifically-designed quantum dot arrays.
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Submitted 21 October, 2013; v1 submitted 27 June, 2013;
originally announced June 2013.
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Quantum and classical correlations and Werner states in finite spin linear arrays
Authors:
P. R. Wells Jr.,
C. M. Chaves,
J. A. e. Castro,
Belita Koiller
Abstract:
Pairwise quantum correlations in the ground state of a N-spins antiferromagnetic chain described by the Heisenberg model with nearest neighbor exchange coupling are investigated. By varying a single coupling between two neighboring sites it is possible to drive spins from entangled to disentangled states, reversibly. For even N the two-spin density matrix is written in the form of a Werner state,…
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Pairwise quantum correlations in the ground state of a N-spins antiferromagnetic chain described by the Heisenberg model with nearest neighbor exchange coupling are investigated. By varying a single coupling between two neighboring sites it is possible to drive spins from entangled to disentangled states, reversibly. For even N the two-spin density matrix is written in the form of a Werner state, allowing identification of the weight parameter with the usual spin-spin correlation function $\langle S_i^z \, S_j^z \rangle = Γ_{ij}$. The correlation functions show universal behavior in the $Γ$-dependence. This study presents a concrete possibility for the practical demonstration of entanglement control, opening alternatives for probing non-classical correlations and the realization of Werner states in familiar condensed matter systems. All required fabrication and measurement ingredients are currently available.
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Submitted 24 May, 2013;
originally announced May 2013.
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Genetic Design of Enhanced Valley Splitting towards a Spin Qubit in Silicon
Authors:
Lijun Zhang,
Jun-Wei Luo,
A. L. Saraiva,
Belita Koiller,
Alex Zunger
Abstract:
Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin quantum computing in Si hosts is the orbital degeneracy of this material's conduction band, preventing the spin-1/2 states from being an isolated two-level system…
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Electronic spins in Silicon (Si) are rising contenders for qubits -- the logical unit of quantum computation-- owing to its outstanding spin coherence properties and compatibility to standard electronics. A remarkable limitation for spin quantum computing in Si hosts is the orbital degeneracy of this material's conduction band, preventing the spin-1/2 states from being an isolated two-level system. So far available samples of Si quantum wells cladded by Ge-Si alloy barriers provide relatively small valley splitting (VS), with the order of 1 meV or less, degrading the fidelity of qubits encoded in spin "up" and "down" states in Si. Here, based on an atomically resolved pseudopotential theory, we demonstrate that ordered Ge-Si layered barriers confining a Si slab can be harnessed to enhance the VS in the active Si region by up to one order of magnitude compared to the random alloy barriers adopted so far. A biologically inspired genetic-algorithm search is employed to identify magic Ge/Si layer sequences of the superlattice barriers that isolate the electron ground state in a single valley composition with VS as large as ~9 meV. The enhanced VS is preserved with the reasonable inter-layer mixing between different species, and is interestingly "protected" even if some larger mixing occurs. Implementation of the optimized layer sequences of barriers, within reach of modern superlattice growth techniques, overcomes in a practical systematic way the main current limitations related to the orbital degeneracy, thus providing a roadmap for reliable spin-only quantum computing in Si.
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Submitted 20 March, 2013;
originally announced March 2013.
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Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
Authors:
A. Baena,
A. L. Saraiva,
Belita Koiller,
M. J. Calderón
Abstract:
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor pra…
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We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the electron ground state is essentially confined at the donor. At high fields the ground state is such that the electron is drawn to the interface, leaving the donor practically ionized. Valley splitting at the interface occurs due to the valley-orbit coupling, V_vo^I = |V_vo^I| e^{i theta}. At intermediate electric fields, close to a characteristic shuttling field, the electron states may constitute hybridized states with valley compositions different from the donor and the interface ground states. The full spectrum of energy levels shows crossings and anti-crossings as the field varies. The degree of level repulsion, thus the width of the anti-crossing gap, depends on the relative valley compositions, which vary with |V_vo^I|, theta and the interface-donor distance. We focus on the valley configurations of the states involved in the donor-interface tunneling process, given by the anti-crossing of the three lowest eigenstates. A sequence of two anti-crossings takes place and the complex phase theta affects the symmetries of the eigenstates and level anti-crossing gaps. We discuss the implications of our results on the practical manipulation of donor electrons in Si nanostructures.
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Submitted 8 August, 2012; v1 submitted 28 March, 2012;
originally announced March 2012.
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Quantum and classical correlations in antiferromagnetic chains and the realization of Werner states with spins
Authors:
P. R. Wells Jr.,
Belita Koiller
Abstract:
We investigate pairwise correlation properties of the ground state (GS) of finite antiferromagnetic (AFM) spin chains described by the Heisenberg model. The exchange coupling is restricted to nearest neighbor spins, and is constant $J_0$ except for a pair of neighboring sites, where the coupling $J_1$ may vary. We identify a rich variety of possible behaviors for different measures of pairwise (qu…
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We investigate pairwise correlation properties of the ground state (GS) of finite antiferromagnetic (AFM) spin chains described by the Heisenberg model. The exchange coupling is restricted to nearest neighbor spins, and is constant $J_0$ except for a pair of neighboring sites, where the coupling $J_1$ may vary. We identify a rich variety of possible behaviors for different measures of pairwise (quantum and classical) correlations and entanglement in the GS of such spin chain. Varying a single coupling affects the degree of correlation between all spin pairs, indicating possible control over such correlations by tuning $J_1$. We also show that a class of two spin states constitutes exact spin realizations of Werner states (WS). Apart from the basic and theoretical aspects, this opens concrete alternatives for experimentally probing non-classical correlations in condensed matter systems, as well as for experimental realizations of a WS via a single tunable exchange coupling in a AFM chain.
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Submitted 18 November, 2011;
originally announced November 2011.
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Valley-based noise-resistant quantum computation using Si quantum dots
Authors:
Dimitrie Culcer,
A. L. Saraiva,
Belita Koiller,
Xuedong Hu,
S. Das Sarma
Abstract:
We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tu…
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We devise a platform for noise-resistant quantum computing using the valley degree of freedom of Si quantum dots. The qubit is encoded in two polarized (1,1) spin-triplet states with different valley compositions in a double quantum dot, with a Zeeman field enabling unambiguous initialization. A top gate gives a difference in the valley splitting between the dots, allowing controllable interdot tunneling between opposite valley eigenstates, which enables one-qubit rotations. Two-qubit operations rely on a stripline resonator, and readout on charge sensing. Sensitivity to charge and spin fluctuations is determined by intervalley processes and is greatly reduced as compared to conventional spin and charge qubits. We describe a valley echo for further noise suppression.
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Submitted 27 March, 2012; v1 submitted 30 June, 2011;
originally announced July 2011.
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Extended interface states enhance valley splitting in Si/SiO2
Authors:
A. L. Saraiva,
Belita Koiller,
Mark Friesen
Abstract:
Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive effect occurring at Si/SiO2 interfaces. By applying tight binding methods, we show that intrinsic interface states can hybridize with conventional valley states, le…
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Interface disorder and its effect on the valley degeneracy of the conduction band edge remains among the greatest theoretical challenges for understanding the operation of spin qubits in silicon. Here, we investigate a counterintuitive effect occurring at Si/SiO2 interfaces. By applying tight binding methods, we show that intrinsic interface states can hybridize with conventional valley states, leading to a large ground state energy gap. The effects of hybridization have not previously been explored in details for valley splitting. We find that valley splitting is enhanced in the presence of disordered chemical bonds, in agreement with recent experiments.
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Submitted 27 September, 2010; v1 submitted 24 September, 2010;
originally announced September 2010.
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Hyperfine interactions in silicon quantum dots
Authors:
Lucy V. C. Assali,
Helena M. Petrilli,
Rodrigo B. Capaz,
Belita Koiller,
Xuedong Hu,
S. Das Sarma
Abstract:
We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural S…
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We present an all-electron calculation of the hyperfine parameters for conduction electrons in Si, showing that: (i) all parameters scale linearly with the spin density at a $^{29}$Si site; (ii) the isotropic term is over 30 times larger than the anisotropic part; (iii) conduction electron charge density at a Si nucleus is consistent with experimental estimates; (iv) Overhauser fields in natural Si quantum dots (QDs) are two orders of magnitude smaller than in GaAs QDs. This reinforces the outstanding performance of Si in keeping spin coherence and opens access to reliable quantitative information aiming at spintronic applications.
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Submitted 7 May, 2011; v1 submitted 6 July, 2010;
originally announced July 2010.
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Intervalley coupling for interface-bound electrons in silicon: An effective mass study
Authors:
A. L. Saraiva,
M. J. Calderón,
Rodrigo B. Capaz,
Xuedong Hu,
S. Das Sarma,
Belita Koiller
Abstract:
Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nond…
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Orbital degeneracy of the electronic conduction band edge in silicon is a potential roadblock to the storage and manipulation of quantum information involving the electronic spin degree of freedom in this host material. This difficulty may be mitigated near an interface between Si and a barrier material, where intervalley scattering may couple states in the conduction ground state, leading to nondegenerate orbital ground and first excited states. The level splitting is experimentally found to have a strong sample dependence, varying by orders of magnitude for different interfaces and samples. The basic physical mechanisms leading to such coupling in different systems are addressed. We expand our recent study based on an effective mass approach, incorporating the full plane-wave expansions of the Bloch functions at the conduction band minima. Physical insights emerge naturally from a simple Si/barrier model. In particular, we present a clear comparison between ours and different approximations and formalisms adopted in the literature and establish the applicability of these approximations in different physical scenarios.
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Submitted 14 November, 2011; v1 submitted 16 June, 2010;
originally announced June 2010.
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Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
Authors:
M. J. Calderon,
J. Verduijn,
G. P. Lansbergen,
G. C. Tettamanzi,
S. Rogge,
Belita Koiller
Abstract:
Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small chargi…
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Donor states in Si nanodevices can be strongly modified by nearby insulating barriers and metallic gates. We report here experimental results indicating a strong reduction in the charging energy of isolated As dopants in Si FinFETs relative to the bulk value. By studying the problem of two electrons bound to a shallow donor within the effective mass approach, we find that the measured small charging energy may be due to a combined effect of the insulator screening and the proximity of metallic gates.
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Submitted 7 May, 2010;
originally announced May 2010.
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Physical mechanisms of interface-mediated intervalley coupling in Si
Authors:
A. L. Saraiva,
M. J. Calderón,
Xuedong Hu,
S. Das Sarma,
Belita Koiller
Abstract:
The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that pro…
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The conduction band degeneracy in Si is detrimental to quantum computing based on spin qubits, for which a nondegenerate ground orbital state is desirable. This degeneracy is lifted at an interface with an insulator as the spatially abrupt change in the conduction band minimum leads to intervalley scattering. We present a theoretical study of the interface-induced valley splitting in Si that provides simple criteria for optimal fabrication parameters to maximize this splitting. Our work emphasizes the relevance of different interface-related properties to the valley splitting.
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Submitted 31 August, 2009; v1 submitted 29 January, 2009;
originally announced January 2009.
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Model for spin coupling disorder effects on the susceptibility of antiferromagnetic nanochains
Authors:
C. M. Chaves,
Thereza Paiva,
J. d'Albuquerque e Castro,
Belita Koiller
Abstract:
The temperature dependence of the static magnetic susceptibility of exchange-disordered antiferromagnetic Heisenberg spin-1/2 finite chains with an odd number of spins is investigated as a function of size and type of disorder in the exchange coupling. Two models for the exchange disorder distribution are considered. At sufficiently low temperatures each chain behaves like an isolated spin-1/2 p…
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The temperature dependence of the static magnetic susceptibility of exchange-disordered antiferromagnetic Heisenberg spin-1/2 finite chains with an odd number of spins is investigated as a function of size and type of disorder in the exchange coupling. Two models for the exchange disorder distribution are considered. At sufficiently low temperatures each chain behaves like an isolated spin-1/2 particle. As the size of the chains increases, this analogy is lost and the chains evolve into the thermodynamic limit behavior. The present study provides a simple criterion, based on susceptibility measurements, to establish when odd-sized chains effectively simulate a single spin-1/2 particle.
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Submitted 29 January, 2009; v1 submitted 27 January, 2009;
originally announced January 2009.
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Quantum computation with doped silicon cavities
Authors:
M. Abanto,
L. Davidovich,
Belita Koiller,
R. L. de Matos Filho
Abstract:
We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processes already demonstrated in ion traps and other atomic systems. Our scheme considerably simplifies the implementation of the building blocks for the successful operation of silicon-based solid-state quantum computers, in…
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We propose a quantum computer architecture involving substitutional donors in photonic-crystal silicon cavities and the optical initialization, manipulation, and detection processes already demonstrated in ion traps and other atomic systems. Our scheme considerably simplifies the implementation of the building blocks for the successful operation of silicon-based solid-state quantum computers, including positioning of the donors, realization of one- and two-qubit gates, initialization and readout of the qubits. Detailed consideration of the processes involved, using state-of-the-art values for the relevant parameters, indicates that this architecture might lead to errors per gate compatible with scalable quantum computation.
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Submitted 24 November, 2008;
originally announced November 2008.
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Quantum control and manipulation of donor electrons in Si-based quantum computing
Authors:
M. J. Calderon,
A. Saraiva,
B. Koiller,
S. Das Sarma
Abstract:
Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues…
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Doped Si is a promising candidate for quantum computing due to its scalability properties, long spin coherence times, and the astonishing progress on Si technology and miniaturization in the last few decades. This proposal for a quantum computer ultimately relies on the quantum control of electrons bound to donors near a Si/barrier (e.g. SiO2) interface. We address here several important issues and define critical parameters that establish the conditions that allow the manipulation of donor electrons in Si by means of external electric and magnetic fields.
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Submitted 21 July, 2009; v1 submitted 22 September, 2008;
originally announced September 2008.
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Valley interference effects on a donor electron close to a Si/SiO2 interface
Authors:
M. J. Calderon,
Belita Koiller,
S. Das Sarma
Abstract:
We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much…
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We analyze the effects of valley interference on the quantum control and manipulation of an electron bound to a donor close to a Si/SiO2 interface as a function of the valley-orbit coupling at the interface. We find that, for finite valley-orbit coupling, the tunneling times involved in shuttling the electron between the donor and the interface oscillate with the interface/donor distance in much the same way as the exchange coupling oscillates with the interdonor distance. These oscillations disappear when the ground state at the interface is degenerate (corresponding to zero valley-orbit coupling).
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Submitted 11 December, 2007;
originally announced December 2007.
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Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures
Authors:
A. L. Saraiva,
M. J. Calderon,
Belita Koiller
Abstract:
We calculate the exchange coupling J between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the double-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly…
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We calculate the exchange coupling J between electrons in a double-well potential in a two-dimensional semiconductor environment within the Heitler-London (HL) approach. Two functional forms are considered for the double-well potential. We show that by choosing an appropriate and relatively simple single-electron variational wave function it is possible, within the HL approach, to significantly improve the estimates for J. In all cases the present scheme overcomes the artifacts and limitations at short interdot distances, previously attributed to the HL method, where unphysical triplet ground states have been found, and leads to an overall agreement with analytic interpolated expressions for J obtained for a donor-type model potential.
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Submitted 28 November, 2007; v1 submitted 22 June, 2007;
originally announced June 2007.
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Conduction band tight-binding description for silicon applied to phosphorous donors
Authors:
A. S. Martins,
Timothy B. Boykin,
Gerhard Klimeck,
Belita Koiller
Abstract:
A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectra…
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A tight-binding parametrization for silicon, optimized to correctly reproduce effective masses as well as the reciprocal space positions of the conduction-band minima, is presented. The reliability of the proposed parametrization is assessed by performing systematic comparisons between the descriptions of donor impurities in Si using this parametrization and previously reported ones. The spectral decomposition of the donor wavefunction demonstrates the importance of incorporating full band effects for a reliable representation, and that an incomplete real space description results from a truncated reciprocal space expansion as proposed within the effective mass theory.
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Submitted 11 January, 2007; v1 submitted 10 December, 2006;
originally announced December 2006.
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External field control of donor electron exchange at the Si/SiO2 interface
Authors:
M. J. Calderon,
Belita Koiller,
S. Das Sarma
Abstract:
We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in…
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We analyze several important issues for the single- and two-qubit operations in Si quantum computer architectures involving P donors close to a SiO2 interface. For a single donor, we investigate the donor-bound electron manipulation (i.e. 1-qubit operation) between the donor and the interface by electric and magnetic fields. We establish conditions to keep a donor-bound state at the interface in the absence of local surface gates, and estimate the maximum planar density of donors allowed to avoid the formation of a 2-dimensional electron gas at the interface. We also calculate the times involved in single electron shuttling between the donor and the interface. For a donor pair, we find that under certain conditions the exchange coupling (i.e. 2-qubit operation) between the respective electron pair at the interface may be of the same order of magnitude as the coupling in GaAs-based two-electron double quantum dots where coherent spin manipulation and control has been recently demonstrated (for example for donors ~10 nm below the interface and \~40 nm apart, J~10^{-4} meV), opening the perspective for similar experiments to be performed in Si.
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Submitted 19 March, 2007; v1 submitted 4 December, 2006;
originally announced December 2006.
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Single electron spin and its coherence in Si quantum computer architecture
Authors:
M. J. Calderon,
Belita Koiller,
S. Das Sarma
Abstract:
The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited st…
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The possibility of performing single spin measurements in Si-based quantum computers through electric field control of electrons bound to double donors near a barrier interface is assessed. We find that both the required electric fields and the tunneling times involved are probably too large for practical implementations. On the other hand, operations with double donors in their first excited state require smaller fields and faster tunneling times, and are therefore suitable for spin-to-charge conversion measurements. We also propose a measurement scheme that would render statistical (ensemble) estimates of the spin coherence at the Si/SiO2 interface.
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Submitted 3 October, 2006;
originally announced October 2006.
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Magnetic field-assisted manipulation and entanglement of Si spin qubits
Authors:
M. J. Calderon,
Belita Koiller,
S. Das Sarma
Abstract:
Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that su…
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Architectures of donor-electron based qubits in silicon near an oxide interface are considered theoretically. We find that the precondition for reliable logic and read-out operations, namely the individual identification of each donor-bound electron near the interface, may be accomplished by fine-tuning electric and magnetic fields, both applied perpendicularly to the interface. We argue that such magnetic fields may also be valuable in controlling two-qubit entanglement via donor electron pairs near the interface.
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Submitted 4 August, 2006; v1 submitted 24 February, 2006;
originally announced February 2006.
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Exchange coupling in semiconductor nanostructures: Validity and limitations of the Heitler-London approach
Authors:
M. J. Calderon,
Belita Koiller,
S. Das Sarma
Abstract:
The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and a systematic analysis for the source of inaccuracies in the HL approach is presented. For the strongly confining coulombic atomic potentials in the H2 molecu…
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The exchange coupling of the spins of two electrons in double well potentials in a semiconductor background is calculated within the Heitler-London (HL) approximation. Atomic and quantum dot types of confining potentials are considered, and a systematic analysis for the source of inaccuracies in the HL approach is presented. For the strongly confining coulombic atomic potentials in the H2 molecule, the most dramatic failure occurs at very large interatomic distances, where HL predicts a triplet ground state, both in 3D and in 2D, coming from the absence of electron-electron correlation effects in this approach. For a 2D double well potential, failures are identified at relatively smaller interdot distances, and may be attributed to the less confining nature of the potential, leading to larger overlap and consequently an inadequate representation of the two-particle states written, within HL, in terms of the ground state orbital at each isolated well. We find that in the double dot case, the range of validity of HL is improved (restricted) in a related 3D (1D) model, and that results always tend to become more reliable as the interdot distance increases. Our calculated exchange coupling is of relevance to the exchange gate quantum computer architectures in semiconductors.
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Submitted 10 July, 2006; v1 submitted 14 December, 2005;
originally announced December 2005.
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Electric field driven donor-based charge qubits in semiconductors
Authors:
Belita Koiller,
Xuedong Hu,
S. Das Sarma
Abstract:
We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and h…
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We investigate theoretically donor-based charge qubit operation driven by external electric fields. The basic physics of the problem is presented by considering a single electron bound to a shallow-donor pair in GaAs: This system is closely related to the homopolar molecular ion H_2^+. In the case of Si, heteropolar configurations such as PSb^+ pairs are also considered. For both homopolar and heteropolar pairs, the multivalley conduction band structure of Si leads to short-period oscillations of the tunnel-coupling strength as a function of the inter-donor relative position. However, for any fixed donor configuration, the response of the bound electron to a uniform electric field in Si is qualitatively very similar to the GaAs case, with no valley quantum interference-related effects, leading to the conclusion that electric field driven coherent manipulation of donor-based charge qubits is feasible in semiconductors.
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Submitted 19 October, 2005;
originally announced October 2005.
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Effect of post-growth annealing on the optical properties of InAs/GaAs quantum dots: A tight-binding study
Authors:
R. Santoprete,
P. Kratzer,
M. Scheffler,
R. B. Capaz,
Belita Koiller
Abstract:
We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations wh…
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We present an atomistic study of the strain field, the one-particle electronic spectrum and the oscillator strength of the fundamental optical transition in chemically disordered In$_{x}$Ga$_{1-x}$As pyramidal quantum dots (QDs). Interdiffusion across the interfaces of an originally ``pure'' InAs dot buried in a GaAs matrix is simulated through a simple model, leading to atomic configurations where the abrupt hetero-interfaces are replaced by a spatially inhomogeneous composition profile $x$. Structural relaxation and the strain field calculations are performed through the Keating valence force field (VFF) model, while the electronic and optical properties are determined within the empirical tight-binding (ETB) approach. We analyze the relative impact of two different aspects of the chemical disorder, namely: (i) the effect of the strain relief inside the QD, and (ii) the purely chemical effect due to the group-III atomic species interdiffusion. We find that these effects may be quantitatively comparable, significantly affecting the electronic and optical properties of the dot. Our results are discussed in comparison with recent luminescence studies of intermixed QDs.
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Submitted 11 October, 2005;
originally announced October 2005.
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Quantum control of donor electrons at the Si-SiO2 interface
Authors:
M. J. Calderon,
Belita Koiller,
Xuedong Hu,
S. Das Sarma
Abstract:
Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the dist…
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Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.
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Submitted 15 February, 2006; v1 submitted 26 August, 2005;
originally announced August 2005.
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The magnetic susceptibility of exchange-disordered antiferromagnetic finite chains
Authors:
C. M. Chaves,
Thereza Paiva,
J. d'Albuquerque e Castro,
F. Hebert,
R. T. Scalettar,
G. G. Batrouni,
Belita Koiller
Abstract:
The low-temperature behavior of the static magnetic susceptibility $χ(T)$ of exchange-disordered antiferromagnetic spin chains is investigated. It is shown that for a relatively small and even number of spins in the chain, two exchange distributions which are expected to occur in nanochains of P donors in silicon lead to qualitatively distinct behaviors of the low-temperature susceptibility. As…
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The low-temperature behavior of the static magnetic susceptibility $χ(T)$ of exchange-disordered antiferromagnetic spin chains is investigated. It is shown that for a relatively small and even number of spins in the chain, two exchange distributions which are expected to occur in nanochains of P donors in silicon lead to qualitatively distinct behaviors of the low-temperature susceptibility. As a consequence, magnetic measurements might be useful to characterize whether a given sample meets the requirements compatible with Kane's original proposalfor the exchange gates in a silicon-based quantum computer hardware. We also explore the dependence of $χ(T)$ on the number of spins in the chain as it increases towards the thermodynamic limit, where any degree or distribution of disorder leads to the same low-temperature scaling behavior. We identify a crossover regime where the two distributions of disorder may not be clearly differentiated, but the characteristic scaling of the thermodynamic limit has not yet been reached.
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Submitted 10 February, 2006; v1 submitted 11 July, 2005;
originally announced July 2005.
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Silicon-based spin and charge quantum computation
Authors:
Belita Koiller,
Xuedong Hu,
R. B. Capaz,
A. S. Martins,
S. Das Sarma
Abstract:
Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin co…
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Silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals due to the relatively long spin coherence times. For these spin qubits, donor electron charge manipulation by external gates is a key ingredient for control and read-out of single-qubit operations, while shallow donor exchange gates are frequently invoked to perform two-qubit operations. More recently, charge qubits based on tunnel coupling in P$_2^+$ substitutional molecular ions in Si have also been proposed. We discuss the feasibility of the building blocks involved in shallow donor quantum computation in silicon, taking into account the peculiarities of silicon electronic structure, in particular the six degenerate states at the conduction band edge. We show that quantum interference among these states does not significantly affect operations involving a single donor, but leads to fast oscillations in electron exchange coupling and on tunnel-coupling strength when the donor pair relative position is changed on a lattice-parameter scale. These studies illustrate the considerable potential as well as the tremendous challenges posed by donor spin and charge as candidates for qubits in silicon.
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Submitted 6 May, 2005;
originally announced May 2005.
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Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence
Authors:
Xuedong Hu,
Belita Koiller,
S. Das Sarma
Abstract:
We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of…
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We consider charge qubits based on shallow donor electron states in silicon and coupled quantum dots in GaAs. Specifically, we study the feasibility of P$_2^+$ charge qubits in Si, focusing on single qubit properties in terms of tunnel coupling between the two phosphorus donors and qubit decoherence caused by electron-phonon interaction. By taking into consideration the multi-valley structure of the Si conduction band, we show that inter-valley quantum interference has important consequences for single-qubit operations of P$_2^+$ charge qubits. In particular, the valley interference leads to a tunnel-coupling strength distribution centered around zero. On the other hand, we find that the Si bandstructure does not dramatically affect the electron-phonon coupling and consequently, qubit coherence. We also critically compare charge qubit properties for Si:P$_2^+$ and GaAs double quantum dot quantum computer architectures.
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Submitted 13 December, 2004;
originally announced December 2004.
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Spin quantum computation in silicon nanostructures
Authors:
S. Das Sarma,
Rogerio de Sousa,
Xuedong Hu,
Belita Koiller
Abstract:
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spi…
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Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideal candidates for qubits in such proposals because of their long spin coherence times due to their limited interactions with their environments. For these spin qubits, shallow donor exchange gates are frequently invoked to perform two-qubit operations. We discuss in this review a particularly important spin decoherence channel, and bandstructure effects on the exchange gate control. Specifically, we review our work on donor electron spin spectral diffusion due to background nuclear spin flip-flops, and how isotopic purification of silicon can significantly enhance the electron spin dephasing time. We then review our calculation of donor electron exchange coupling in the presence of degenerate silicon conduction band valleys. We show that valley interference leads to orders of magnitude variations in electron exchange coupling when donor configurations are changed on an atomic scale. These studies illustrate the substantial potential that donor electron/nuclear spins in silicon have as candidates for qubits and simultaneously the considerable challenges they pose. In particular, our work on spin decoherence through spectral diffusion points to the possible importance of isotopic purification in the fabrication of scalable solid state quantum computer architectures. We also provide a critical comparison between the two main proposed spin-based solid state quantum computer architectures, namely, shallow donor bound states in Si and localized quantum dot states in GaAs.
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Submitted 30 November, 2004;
originally announced November 2004.
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Silicon-based spin quantum computation and the shallow donor exchange gate
Authors:
Belita Koiller,
R. B. Capaz,
X. Hu,
S. Das Sarma
Abstract:
Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideally suited candidates for qubits in such proposals, where shallow d…
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Proposed silicon-based quantum-computer architectures have attracted attention because of their promise for scalability and their potential for synergetically utilizing the available resources associated with the existing Si technology infrastructure. Electronic and nuclear spins of shallow donors (e.g. phosphorus) in Si are ideally suited candidates for qubits in such proposals, where shallow donor exchange gates are frequently invoked to perform two-qubit operations. An important potential problem in this context is that intervalley interference originating from the degeneracy in the Si conduction-band edge causes fast oscillations in donor exchange coupling, which imposes significant constraints on the Si quantum-computer architecture. We discuss the theoretical origin of such oscillations. Considering two substitutional donors in Si, we present a systematic statistical study of the correlation between relative position distributions and the resulting exchange distributions.
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Submitted 7 July, 2004;
originally announced July 2004.
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Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
Authors:
Belita Koiller,
R. B. Capaz,
Xuedong Hu,
S. Das Sarma
Abstract:
Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si co…
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Electronic and nuclear spins of shallow donors in Silicon are attractive candidates for qubits in quantum computer proposals. Shallow donor exchange gates are frequently invoked to preform two-qubit operations in such proposals. We study shallow donor electron properties in Si within the Kohn-Luttinger envelope function approach, incorporating the full Bloch states of the six band edges of Si conduction band, obtained from {\it ab initio} calculations within the density-functional and pseudopotential frameworks. Inter-valley interference between the conduction-band-edge states of Si leads to oscillatory behavior in the charge distribution of one-electron bound states and in the exchange coupling in two-electron states. The behavior in the donor electron charge distribution is strongly influenced by interference from the plane-wave and periodic parts of the Bloch functions. For two donors, oscillations in the exchange coupling calculated within the Heitler-London (HL) approach are due to the plane-wave parts of the Bloch functions alone, which are pinned to the impurity sites. The robustness of this result is assessed by relaxing the phase pinning to the donor sites. We introduce a more general theoretical scheme, the floating-phase HL, from which the previously reported donor exchange oscillatory behavior is qualitatively and quantitatively confirmed. The floating-phase formalism provides a ``handle'' on how to theoretically anticipate the occurrence of oscillatory behavior in electronic properties associated with electron bound states in more general confining potentials, such as in quantum dots.
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Submitted 26 November, 2004; v1 submitted 10 February, 2004;
originally announced February 2004.
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Electric Field Control of Shallow Donor Impurities in Silicon
Authors:
A. S. Martins,
R. B. Capaz,
Belita Koiller
Abstract:
We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the…
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We present a tight-binding study of donor impurities in Si, demonstrating the adequacy of this approach for this problem by comparison with effective mass theory and experimental results. We consider the response of the system to an applied electric field: donors near a barrier material and in the presence of an uniform electric field may undergo two different ionization regimes according to the distance of the impurity to the Si/barrier interface. We show that for impurities ~ 5 nm below the barrier, adiabatic ionization is possible within switching times of the order of one picosecond, while for impurities ~ 10 nm or more below the barrier, no adiabatic ionization may be carried out by an external uniform electric field. Our results are discussed in connection with proposed Si:P quantum computer architectures.
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Submitted 27 August, 2003;
originally announced August 2003.
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Tight-binding study of the influence of the strain on the electronic properties of InAs/GaAs quantum dots
Authors:
R. Santoprete,
Belita Koiller,
R. B. Capaz,
P. Kratzer,
Q. K. K. Liu,
M. Scheffler
Abstract:
We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit coupling. Results for the model system of capped pyramid-shaped InAs QD's in GaAs, with supercells containing $10^{5}$ atoms are presented and compared with…
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We present an atomistic investigation of the influence of strain on the electronic properties of quantum dots (QD's) within the empirical $s p^{3} s^{*}$ tight-binding (ETB) model with interactions up to 2nd nearest neighbors and spin-orbit coupling. Results for the model system of capped pyramid-shaped InAs QD's in GaAs, with supercells containing $10^{5}$ atoms are presented and compared with previous empirical pseudopotential results. The good agreement shows that ETB is a reliable alternative for an atomistic treatment. The strain is incorporated through the atomistic valence force field model. The ETB treatment allows for the effects of bond length and bond angle deviations from the ideal InAs and GaAs zincblende structure to be selectively removed from the electronic-structure calculation, giving quantitative information on the importance of strain effects on the bound state energies and on the physical origin of the spatial elongation of the wave functions. Effects of dot-dot coupling have also been examined to determine the relative weight of both strain field and wave function overlap.
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Submitted 25 September, 2003; v1 submitted 5 June, 2003;
originally announced June 2003.
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Silicon conduction-band effects on shallow donor wavefunctions and donor-pair exchange: An {\it ab initio} theory
Authors:
R. B. Capaz,
Belita Koiller,
Xuedong Hu,
S. Das Sarma
Abstract:
This paper has been withdrawn by the authors. A more complete treatment of the bandstructure effects is forthcoming.
This paper has been withdrawn by the authors. A more complete treatment of the bandstructure effects is forthcoming.
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Submitted 17 December, 2002; v1 submitted 1 December, 2002;
originally announced December 2002.
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Electromechanical Effects in Carbon Nanotubes
Authors:
M. Verissimo-Alves,
Belita Koiller,
H. Chacham,
R. B. Capaz
Abstract:
We perform ab initio calculations of charged graphene and single-wall carbon nanotubes (CNTs). A wealth of electromechanical behaviors is obtained: (1) Both nanotubes and graphene expand upon electron injection. (2) Upon hole injection, metallic nanotubes and graphene display a non-monotonic behavior: Upon increasing hole densities, the lattice constant initially contracts, reaches a minimum, an…
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We perform ab initio calculations of charged graphene and single-wall carbon nanotubes (CNTs). A wealth of electromechanical behaviors is obtained: (1) Both nanotubes and graphene expand upon electron injection. (2) Upon hole injection, metallic nanotubes and graphene display a non-monotonic behavior: Upon increasing hole densities, the lattice constant initially contracts, reaches a minimum, and then starts to expand. The hole densities at minimum lattice constants are 0.3 |e|/atom for graphene and between 0.1 and 0.3 |e|/atom for the metallic nanotubes studied. (3)Semiconducting CNTs with small diameters (d <~ 20 A) always expand upon hole injection; (4) Semiconducting CNTs with large diameters (d >~ 20 A) display a behavior intermediate between those of metallic and large-gap CNTs. (5) The strain versus extra charge displays a linear plus power-law behavior, with characteristic exponents for graphene, metallic, and semiconducting CNTs. All these features are physically understood within a simple tight-binding total-energy model.
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Submitted 18 November, 2002;
originally announced November 2002.