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Fabrication and characterization of InAs nanowire-based quantum dot structures utilizing buried bottom gates
Authors:
Anton Faustmann,
Patrick Liebisch,
Benjamin Bennemann,
Pujitha Perla,
Mihail Ion Lepsa,
Alexander Pawlis,
Detlev Grützmacher,
Joachim Knoch,
Thomas Schäpers
Abstract:
Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 n…
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Semiconductor nanowires can be utilized to create quantum dot qubits. The formation of quantum dots is typically achieved by means of bottom gates created by a lift-off process. As an alternative, we fabricated flat buried bottom gate structures by filling etched trenches in a Si substrate with sputtered TiN, followed by mechanical polishing. This method achieved gate line pitches as small as 60 nm. The gate fingers have low gate leakage. As a proof of principle, we fabricated quantum dot devices using InAs nanowires placed on the gate fingers. These devices exhibit single electron tunneling and Coulomb blockade.
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Submitted 29 November, 2024;
originally announced November 2024.
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Ultra-steep slope cryogenic FETs based on bilayer graphene
Authors:
E. Icking,
D. Emmerich,
K. Watanabe,
T. Taniguchi,
B. Beschoten,
M. C. Lemme,
J. Knoch,
C. Stampfer
Abstract:
Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-…
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Cryogenic field-effect transistors (FETs) offer great potential for a wide range of applications, the most notable example being classical control electronics for quantum information processors. In the latter context, on-chip FETs with low power consumption are a crucial requirement. This, in turn, requires operating voltages in the millivolt range, which are only achievable in devices with ultra-steep subthreshold slopes. However, in conventional cryogenic metal-oxide-semiconductor (MOS)FETs based on bulk material, the experimentally achieved inverse subthreshold slopes saturate around a few mV/dec due to disorder and charged defects at the MOS interface. FETs based on two-dimensional materials offer a promising alternative. Here, we show that FETs based on Bernal stacked bilayer graphene encapsulated in hexagonal boron nitride and graphite gates exhibit inverse subthreshold slopes of down to 250 $μ$V/dec at 0.1 K, approaching the Boltzmann limit. This result indicates an effective suppression of band tailing in van-der-Waals heterostructures without bulk interfaces, leading to superior device performance at cryogenic temperature.
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Submitted 2 August, 2024;
originally announced August 2024.
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Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing
Authors:
Oliver Steuer,
Michail Michailow,
René Hübner,
Krzysztof Pyszniak,
Marcin Turek,
Ulrich Kentsch,
Fabian Ganss,
Muhammad Moazzam Khan,
Lars Rebohle,
Shengqiang Zhou,
Joachim Knoch,
Manfred Helm,
Gianaurelio Cuniberti,
Yordan M. Georgiev,
Slawomir Prucnal
Abstract:
For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band g…
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For many years, Si1-yGey alloys have been applied in the semiconductor industry due to the ability to adjust the performance of Si-based nanoelectronic devices. Following this alloying approach of group-IV semiconductors, adding tin (Sn) into the alloy appears as the obvious next step, which leads to additional possibilities for tailoring the material properties. Adding Sn enables effective band gap and strain engineering and can improve the carrier mobilities, which makes Si1-x-yGeySnx alloys promising candidates for future opto- and nanoelectronics applications. The bottom-up approach for epitaxial growth of Si1-x-yGeySnx, e.g., by chemical vapor deposition and molecular beam epitaxy, allows tuning the material properties in the growth direction only; the realization of local material modifications to generate lateral heterostructures with such a bottom-up approach is extremely elaborate, since it would require the use of lithography, etching, and either selective epitaxy or epitaxy and chemical-mechanical polishing giving rise to interface issues, non-planar substrates, etc. This article shows the possibility of fabricating Si1-x-yGeySnx alloys by Sn ion beam implantation into Si1-yGey layers followed by millisecond-range flash lamp annealing (FLA). The materials are investigated by Rutherford backscattering spectrometry, micro Raman spectroscopy, X-ray diffraction, and transmission electron microscopy. The fabrication approach was adapted to ultra-thin Si1-yGey layers on silicon-on-insulator substrates. The results show the fabrication of single-crystalline Si1-x-yGeySnx with up to 2.3 at.% incorporated Sn without any indication of Sn segregation after recrystallization via FLA. Finally, we exhibit the possibility of implanting Sn locally in ultra-thin Si1-yGey films by masking unstructured regions on the chip.
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Submitted 13 June, 2024;
originally announced June 2024.
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Atomistic compositional details and their importance for spin qubits in isotope-purified silicon-germanium quantum wells
Authors:
Jan Klos,
Jan Tröger,
Jens Keutgen,
Merritt P. Losert,
Helge Riemann,
Nikolay V. Abrosimov,
Joachim Knoch,
Hartmut Bracht,
Susan N. Coppersmith,
Mark Friesen,
Oana Cojocaru-Mirédin,
Lars R. Schreiber,
Dominique Bougeard
Abstract:
Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing…
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Understanding crystal characteristics down to the atomistic level increasingly emerges as a crucial insight for creating solid state platforms for qubits with reproducible and homogeneous properties. Here, isotope composition depth profiles in a SiGe/$^{28}$Si/SiGe heterostructure are analyzed with atom probe tomography (APT) and time-of-flight secondary-ion mass spectrometry. Spin-echo dephasing times $T_2^{echo}=128 μs$ and valley energy splittings around $200 μeV$ have been observed for single spin qubits in this quantum well (QW) heterostructure, pointing towards the suppression of qubit decoherence through hyperfine interaction or via scattering between valley states. The concentration of nuclear spin-carrying $^{29}$Si is 50 ppm in the $^{28}$Si QW. APT allows to uncover that both the top SiGe/$^{28}$Si and the bottom $^{28}$Si/SiGe interfaces of the QW are shaped by epitaxial growth front segregation signatures on a few monolayer scale. A subsequent thermal treatment broadens the top interface by about two monolayers, while the width of the bottom interface remains unchanged. Using a tight-binding model including SiGe alloy disorder, these experimental results suggest that the combination of the slightly thermally broadened top interface and of a minimal Ge concentration of $0.3 \%$ in the QW, resulting from segregation, is instrumental for the observed large valley splitting. Minimal Ge additions $< 1 \%$, which get more likely in thin QWs, will hence support high valley splitting without compromising coherence times. At the same time, taking thermal treatments during device processing as well as the occurrence of crystal growth characteristics into account seems important for the design of reproducible qubit properties.
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Submitted 30 May, 2024;
originally announced May 2024.
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Global well-posedness and numerical justification of an effective micro-macro model for reactive transport in elastic perforated media
Authors:
Jonas Knoch,
Markus Gahn,
Maria Neuss-Radu
Abstract:
In this paper, we investigate an effective model for reactive transport in elastically deformable perforated media. This model was derived by formal asymptotic expansions in [25], starting from a microscopic model consisting of a linear elasticity problem on a fixed domain, i.e. in the Lagrangian framework, and a problem for reactive transport on the current deformed domain, i.e. in the Eulerian f…
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In this paper, we investigate an effective model for reactive transport in elastically deformable perforated media. This model was derived by formal asymptotic expansions in [25], starting from a microscopic model consisting of a linear elasticity problem on a fixed domain, i.e. in the Lagrangian framework, and a problem for reactive transport on the current deformed domain, i.e. in the Eulerian framework. The effective model is of micro-macro type and features strong non-linear couplings. Here, we prove global existence in time and uniqueness for the effective micro-macro model under a smallness assumption for the data of the macroscopic elasticity subproblem. Moreover, we show numerically the convergence of microscopic solutions towards the solution of the effective model when the scale parameter ε > 0 becomes smaller and smaller, and also compute the approximation error. The numerical justification of the formally derived effective micro-macro model is particularly important, as rigorous analytical convergence proofs or error estimates are not available so far. Finally, we compare the effective micro-macro model with alternative, simpler effective descriptions of transport in elastic perforated media.
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Submitted 6 April, 2024;
originally announced April 2024.
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Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Authors:
Dirk König,
Michael Frentzen,
Daniel Hiller,
Noël Wilck,
Giovanni Di Santo,
Luca Petaccia,
Igor Pìs,
Federica Bondino,
Elena Magnano,
Joachim Mayer,
Joachim Knoch,
Sean C. Smith
Abstract:
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict…
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The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.
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Submitted 23 August, 2022;
originally announced August 2022.
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Multi-Scale Modeling and Simulation of Transport Processes in an Elastically Deformable Perforated Medium
Authors:
Jonas Knoch,
Markus Gahn,
Maria Neuss-Radu,
Nicolas Neuß
Abstract:
In this paper, we derive an effective model for transport processes in periodically perforated elastic media, taking into account, e.g., cyclic elastic deformations as they occur in lung tissue due to respiratory movement. The underlying microscopic problem couples the deformation of the domain with a diffusion process within a mixed \textit{Lagrangian}/\textit{Eulerian} formulation. After a trans…
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In this paper, we derive an effective model for transport processes in periodically perforated elastic media, taking into account, e.g., cyclic elastic deformations as they occur in lung tissue due to respiratory movement. The underlying microscopic problem couples the deformation of the domain with a diffusion process within a mixed \textit{Lagrangian}/\textit{Eulerian} formulation. After a transformation of the diffusion problem onto the fixed domain, we use the formal method of two-scale asymptotic expansion to derive the upscaled model, which is nonlinearly coupled through effective coefficients. The effective model is implemented and validated using an application-inspired model problem. Numerical solutions for both, cell problems and macroscopic equations, are investigated and interpreted. We use simulations to qualitatively determine the effect of the deformation on the transport process.
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Submitted 14 June, 2022;
originally announced June 2022.
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Role of electron and ion irradiation in a reliable lift-off process with e-beam evaporation and a bilayer PMMA resist system
Authors:
Bin Sun,
Thomas Grap,
Thorben Frahm,
Stefan Scholz,
Joachim Knoch
Abstract:
This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. The impact of charged particles, i.e. electrons and ions, is investigated using an electron beam evaporation chamber equipped with ring-magnets and a plate electrode placed in front of the sample. By replacing the plate e…
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This paper addresses issues related to cracking and blisters in deposited films encountered in a lift-off process with electron beam evaporation and a bilayer PMMA resist system. The impact of charged particles, i.e. electrons and ions, is investigated using an electron beam evaporation chamber equipped with ring-magnets and a plate electrode placed in front of the sample. By replacing the plate electrode with a hollow cylinder, the modified evaporation setup utilizing passive components allows a complete elimination of resist shrinkage and blistering yielding near perfect deposition results for a large variety of different materials.
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Submitted 26 April, 2021;
originally announced April 2021.
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On the Performance of Dual-Gate Reconfigurable Nanowire Transistors
Authors:
Bin Sun,
Benjamin Richstein,
Patrick Liebisch,
Thorben Frahm,
Stefan Scholz,
Jens Trommer,
Thomas Mikolajick,
Joachim Knoch
Abstract:
We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configu…
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We investigate the operation of dual-gate reconfigurable field-effect transistor (RFET) in the programgate at drain (PGAD) and program-gate at source (PGAS) configurations. To this end, dual-gate silicon nanowire (SiNW) FETs are fabricated based on anisotropic wet chemical silicon etching and nickel silicidation yielding silicide-SiNW Schottky junctions at source and drain. Whereas in PGAD-configuration ambipolar operation is suppressed, switching is deteriorated due to the injection through a Schottky-barrier. Operating the RFET in PGAS configuration yields a switching behavior close to a conventional MOSFET. This, howewer, needs to be traded off against strongly non-linear output characteristics for small bias.
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Submitted 26 February, 2021;
originally announced March 2021.
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Dissolution of donor-vacancy clusters in heavily doped n-type germanium
Authors:
Slawomir Prucnal,
Maciej O. Liedke,
Xiaoshuang Wang,
Maik Butterling,
Matthias Posselt,
Joachim Knoch,
Horst Windgassen,
Eric Hirschmann,
Yonder Berencén,
Lars Rebohle,
Mao Wang,
Enrico Napoltani,
Jacopo Frigerio,
Andrea Ballabio,
Giovani Isella,
René Hübner,
Andreas Wagner,
Hartmut Bracht,
Manfred Helm,
Shengqiang Zhou
Abstract:
The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concen…
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The n-type doping of Ge is a self-limiting process due to the formation of vacancy-donor complexes (DnV with n <= 4) that deactivate the donors. This work unambiguously demonstrates that the dissolution of the dominating P4V clusters in heavily phosphorus-doped Ge epilayers can be achieved by millisecond-flash lamp annealing at about 1050 K. The P4V cluster dissolution increases the carrier concentration by more than three-fold together with a suppression of phosphorus diffusion. Electrochemical capacitance-voltage measurements in conjunction with secondary ion mass spectrometry, positron annihilation lifetime spectroscopy and theoretical calculations enabled us to address and understand a fundamental problem that has hindered so far the full integration of Ge with complementary-metal-oxide-semiconductor technology.
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Submitted 28 October, 2020;
originally announced October 2020.
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Electronic Structure Shift of Deep Nanoscale Silicon by SiO$_2$- vs. Si$_3$N$_4$-Embedding as Alternative to Impurity Doping
Authors:
Dirk König,
Noël Wilck,
Daniel Hiller,
Birger Berghoff,
Alexander Meledin,
Giovanni Di Santo,
Luca Petaccia,
Joachim Mayer,
Sean Smith,
Joachim Knoch
Abstract:
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An int…
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Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO$_2$ and the other in Si$_3$N$_4$. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO$_2$- vs. Si$_3$N$_4$-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.
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Submitted 15 May, 2019;
originally announced May 2019.
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Spatially resolved THz response as a characterization concept for nanowire FETs
Authors:
K. M. Indlekofer,
R. Németh,
J. Knoch
Abstract:
In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum…
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In this paper, we propose a THz probe technique to obtain spatially resolved information about the electronic spectra inside nanowire-based FETs. This spectroscopic approach employs a segmented multi-gate design for the local detection of quantum transitions between few-electron states within the FET channel. We simulate the intra-band THz response of such devices by means of a many-body quantum approach, taking quantization and Coulomb interaction effects into account. The obtained simulation results demonstrate the capabilities of the proposed technique which go beyond the limitations of standard characterization methods.
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Submitted 11 June, 2007;
originally announced June 2007.
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Improved modeling of Coulomb effects in nanoscale Schottky-barrier FETs
Authors:
Klaus Michael Indlekofer,
Joachim Knoch,
Joerg Appenzeller
Abstract:
We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a divisio…
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We employ a novel multi-configurational self-consistent Green's function approach (MCSCG) for the simulation of nanoscale Schottky-barrier field-effect transistors. This approach allows to calculate the electronic transport with a seamless transition from the single-electron regime to room temperature field-effect transistor operation. The particular improvement of the MCSCG stems from a division of the channel system into a small subsystem of resonantly trapped states for which a many-body Fock space becomes feasible and a strongly coupled rest which can be treated adequately on a conventional mean-field level. The Fock space description allows for the calculation of few-electron Coulomb charging effects beyond mean-field.
We compare a conventional Hartree non-equilibrium Green's function calculation with the results of the MCSCG approach. Using the MCSCG method Coulomb blockade effects are demonstrated at low temperatures while under strong nonequilibrium and room temperature conditions the Hartree approximation is retained.
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Submitted 1 September, 2006;
originally announced September 2006.
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Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
Authors:
K. M. Indlekofer,
J. Knoch,
J. Appenzeller
Abstract:
With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections.…
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With the help of a multi-configurational Green's function approach we simulate single-electron Coulomb charging effects in gated ultimately scaled nanostructures which are beyond the scope of a selfconsistent mean-field description. From the simulated Coulomb-blockade characteristics we derive effective system capacitances and demonstrate how quantum confinement effects give rise to corrections. Such deviations are crucial for the interpretation of experimentally determined capacitances and the extraction of application-relevant system parameters.
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Submitted 10 April, 2006;
originally announced April 2006.
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Low-frequency Current Fluctuations in Individual Semiconducting Single-Wall Carbon Nanotubes
Authors:
Yu-Ming Lin,
Joerg Appenzeller,
Joachin Knoch,
Zhihong Chen,
Phaedon Avouris
Abstract:
We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of tr…
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We present a systematic study on low-frequency current fluctuations of nano-devices consisting of one single semiconducting nanotube, which exhibit significant 1/f-type noise. By examining devices with different switching mechanisms, carrier types (electrons vs. holes), and channel lengths, we show that the 1/f fluctuation level in semiconducting nanotubes is correlated to the total number of transport carriers present in the system. However, the 1/f noise level per carrier is not larger than that of most bulk conventional semiconductors, e.g. Si. The pronounced noise level observed in nanotube devices simply reflects on the small number of carriers involved in transport. These results not only provide the basis to quantify the noise behavior in a one-dimensional transport system, but also suggest a valuable way to characterize low-dimensional nanostructures based on the 1/f fluctuation phenomenon.
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Submitted 22 December, 2005;
originally announced December 2005.
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Quantum kinetic description of Coulomb effects in one-dimensional nano-transistors
Authors:
K. M. Indlekofer,
J. Knoch,
J. Appenzeller
Abstract:
In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantu…
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In this article, we combine the modified electrostatics of a one-dimensional transistor structure with a quantum kinetic formulation of Coulomb interaction and nonequilibrium transport. A multi-configurational self-consistent Green's function approach is presented, accounting for fluctuating electron numbers. On this basis we provide a theory for the simulation of electronic transport and quantum charging effects in nano-transistors, such as gated carbon nanotube and whisker devices and one-dimensional CMOS transistors. Single-electron charging effects arise naturally as a consequence of the Coulomb repulsion within the channel.
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Submitted 28 April, 2005;
originally announced April 2005.
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High-Performance Carbon Nanotube Field-Effect Transistor with Tunable Polarities
Authors:
Yu-Ming Lin,
Joerg Appenzeller,
Joachim Knoch,
Phaedon Avouris
Abstract:
State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device conc…
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State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky barrier (SB)-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance, enhancement-mode CNFETs exhibiting n or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S =63 mV/dec). The device design allows for aggressive oxide thickness and gate length scaling while maintaining the desired device characteristics.
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Submitted 27 January, 2005;
originally announced January 2005.
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High performance n-doped carbon nanotube field-effect transistors
Authors:
M. Radosavljevic,
J. Appenzeller,
Ph. Avouris,
J. Knoch
Abstract:
We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device a…
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We describe a robust technique for the fabrication of high performance vertically scaled n-doped field-effect transistors from large band gap carbon nanotubes. These devices have a tunable threshold voltage in the technologically relevant range (-1.3V < V_th < 0.5V) and can carry up to 5-6 muA of current in the on-state. We achieve such performance by exposure to potassium (K) vapor and device annealing in high vacuum. The treatment has a two-fold effect to: (i) controllably shift V_th toward negative gate biases via bulk doping of the nanotube (up to about 0.6e/nm), and (ii) increase the on-current by 1-2 orders of magnitude. This current enhancement is achieved by lowering external device resistance due to more intimate contact between K metal and doped nanotube channel in addition to potential reduction of the Schottky barrier height at the contact.
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Submitted 13 February, 2004;
originally announced February 2004.
