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Ultra-thin strain-relieving Si$_{1-x}$Ge$_x$ layers enabling III-V epitaxy on Si
Authors:
Trevor R. Smith,
Spencer McDermott,
Vatsalkumar Patel,
Ross Anthony,
Manu Hedge,
Andrew P. Knights,
Ryan B. Lewis
Abstract:
The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on III-V platforms have long powered internet data communications and other optoelectronic technologies, direct integration with…
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The explosion of artificial intelligence, possible end of Moore's law, dawn of quantum computing and continued exponential growth of data communications traffic have brought new urgency to the need for laser integration on the diversified Si platform. While diode lasers on III-V platforms have long powered internet data communications and other optoelectronic technologies, direct integration with Si remains problematic. A paradigm-shifting solution requires exploring new and unconventional materials and integration approaches. In this work, we show that a sub-10-nm ultra-thin Si$_{1-x}$Ge$_x$ buffer layer fabricated by an oxidative solid-phase epitaxy process can facilitate extraordinarily efficient strain relaxation. The Si$_{1-x}$Ge$_x$ layer is formed by ion implanting Ge into Si(111) and selectively oxidizing Si atoms in the resulting ion-damaged layer, precipitating a fully strain-relaxed Ge-rich layer between the Si substrate and surface oxide. The efficient strain relaxation results from the high oxidation temperature, producing a periodic network of dislocations at the substrate interface, coinciding with modulations of the Ge content in the Si$_{1-x}$Ge$_x$ layer and indicating the presence of defect-mediated diffusion of Si through the layer. The epitaxial growth of high-quality GaAs is demonstrated on this ultra-thin Si$_{1-x}$Ge$_x$ layer, demonstrating a promising new pathway for integrating III-V lasers directly on the Si platform.
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Submitted 6 August, 2024;
originally announced August 2024.
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Subwavelength grating metamaterial waveguides and ring resonators on a silicon nitride platform
Authors:
Cameron M. Naraine,
Jocelyn N. Westwood-Bachman,
Cameron Horvath,
Mirwais Aktary,
Andrew P. Knights,
Jens H. Schmid,
Pavel Cheben,
Jonathan D. B. Bradley
Abstract:
We propose and demonstrate subwavelength grating (SWG) metamaterial waveguides and ring resonators on a silicon nitride platform for the first time. The SWG waveguide is engineered such that a large overlap of 53% of the Bloch mode with the top cladding material is achieved, demonstrating excellent potential for applications in evanescent field sensing and light amplification. The devices, which h…
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We propose and demonstrate subwavelength grating (SWG) metamaterial waveguides and ring resonators on a silicon nitride platform for the first time. The SWG waveguide is engineered such that a large overlap of 53% of the Bloch mode with the top cladding material is achieved, demonstrating excellent potential for applications in evanescent field sensing and light amplification. The devices, which have critical dimensions greater than 100 nm, are fabricated using a commercial rapid turn-around silicon nitride prototyping foundry process using electron beam lithography. Experimental characterization of the fabricated device reveals excellent ring resonator internal quality factor (2.11x10^5) and low propagation loss (~1.5 dB/cm) in the C-band, a significant improvement of both parameters compared to silicon based SWG ring resonators. These results demonstrate the promising prospects of SWG metamaterial structures for silicon nitride based photonic integrated circuits.
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Submitted 19 September, 2022;
originally announced September 2022.
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A thulium-silicon hybrid microdisk laser
Authors:
Khadijeh Miarabbas Kiani,
Henry C. Frankis,
Cameron M. Naraine,
Dawson B. Bonneville,
Andrew P. Knights,
Jonathan D. B. Bradley
Abstract:
Silicon photonics technology enables compact, low-power and cost-effective optical microsystems on a chip by leveraging the materials and advanced fabrication methods developed over decades for integrated silicon electronics. Silicon foundries now provide many standard building blocks required for high-performance optical circuits, including passive components such as optical waveguides, filters a…
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Silicon photonics technology enables compact, low-power and cost-effective optical microsystems on a chip by leveraging the materials and advanced fabrication methods developed over decades for integrated silicon electronics. Silicon foundries now provide many standard building blocks required for high-performance optical circuits, including passive components such as optical waveguides, filters and (de-)multiplexors and active optoelectronic components such as high-speed modulators, switches and photodetectors. However, because silicon is a poor light emitting material, on-chip light sources are still a significant challenge for foundry offerings. Current light-source integration methods are viewed as complex, requiring incompatible and/or expensive materials and processing steps. Here we report on an ultra-compact silicon photonic laser consisting of a thulium-silicon hybrid microdisk resonator. The microdisk design is straightforward and compatible with the fabrication steps and device dimensions available in all silicon photonics foundries, whereas the gain medium is added in a backend (final step), room temperature sputter deposition. This approach allows for low-cost and high-volume wafer-scale manufacturing and co-integration of light sources with silicon passive and active devices with no adjustment to standard process flows. The hybrid laser is pumped at standard telecom wavelengths around 1.6 μm and emits around 1.9 μm, which is within an emerging spectral region of significant interest for communications, nonlinear and quantum optics, and sensing on silicon.
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Submitted 21 April, 2021;
originally announced April 2021.
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Electrical conduction of silicon oxide containing silicon quantum dots
Authors:
X. D. Pi,
O. H. Y. Zalloum,
A. P. Knights,
P. Mascher,
P. J. Simpson
Abstract:
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density…
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Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $φ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunneling.
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Submitted 2 April, 2006;
originally announced April 2006.
