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Quantum dot state initialization by control of tunneling rates
Authors:
Tobias Wenz,
Jevgeny Klochan,
Frank Hohls,
Thomas Gerster,
Vyacheslavs Kashcheyevs,
Hans W. Schumacher
Abstract:
We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital r…
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We study the loading of electrons into a quantum dot with dynamically controlled tunnel barriers. We introduce a method to measure tunneling rates for individual discrete states and to identify their relaxation paths. Exponential selectivity of the tunnel coupling enables loading into specific quantum dot states by tuning independently energy and rates. While for the single-electron case orbital relaxation leads to fast transition into the ground state, for electron pairs triplet-to-singlet relaxation is suppressed by long spin-flip times. This enables the fast gate-controlled initialization of either a singlet or a triplet electron pair state in a quantum dot with broad potential applications in quantum technologies.
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Submitted 6 March, 2019;
originally announced March 2019.
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Gigahertz Single-Electron Pumping Mediated by Parasitic States
Authors:
A. Rossi,
J. Klochan,
J. Timoshenko,
F. E. Hudson,
M. Möttönen,
S. Rogge,
A. S. Dzurak,
V. Kashcheyevs,
G. C. Tettamanzi
Abstract:
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approxima…
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In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dots (QDs) have thus far shown the most promising performance in combining fast and accurate charge transfer. However, at frequencies exceeding approximately 1 GHz, the accuracy typically decreases. Recently, hybrid pumps based on QDs coupled to trap states have led to increased transfer rates due to tighter electrostatic confinement. Here, we operate a hybrid electron pump in silicon obtained by coupling a QD to multiple parasitic states, and achieve robust current quantization up to a few gigahertz. We show that the fidelity of the electron capture depends on the sequence in which the parasitic states become available for loading, resulting in distinctive frequency dependent features in the pumped current.
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Submitted 27 June, 2018; v1 submitted 2 March, 2018;
originally announced March 2018.
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Design and operation of CMOS-compatible electron pumps fabricated with optical lithography
Authors:
P. Clapera,
J. Klochan,
R. Lavieville,
S. Barraud,
L. Hutin,
M. Sanquer,
M. Vinet,
A. Cinins,
G. Barinovs,
V. Kashcheyevs,
X. Jehl
Abstract:
We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40 nm) nitride space…
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We report CMOS-compatible quantized current sources (electron pumps) fabricated with nanowires (NWs) on 300 mm SOI wafers. Unlike other Al, GaAs or Si based metallic or semiconductor pumps, the fabrication does not rely on electron-beam lithography. The structure consists of two gates in series on the nanowire and the only difference with the SOI nanowire process lies in long (40 nm) nitride spacers. As a result a single, silicided island gets isolated between the gates and transport is dominated by Coulomb blockade at cryogenic temperatures thanks to the small size and therefore capacitance of this island. Operation and performances comparable to devices featuring e-beam lithography is demonstrated in the non-adiabatic pumping regime, with a pumping frequency up to 300 MHz. We also identify and model signatures of charge traps affecting charge pumping in the adiabatic regime. The availability of quantized current references in a process close to the 28FDSOI technology could trigger new applications for these pumps and allow to cointegrate them with cryogenic CMOS circuits, for instance in the emerging field of interfaces with quantum bits.
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Submitted 30 December, 2016;
originally announced December 2016.
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Dopant-controlled single-electron pumping through a metallic island
Authors:
Tobias Wenz,
Frank Hohls,
Xavier Jehl,
Marc Sanquer,
Sylvain Barraud,
Jevgeny Klochan,
Girts Barinovs,
Vyacheslavs Kashcheyevs
Abstract:
We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates,…
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We investigate a hybrid metallic island / single dopant electron pump based on fully-depleted silicon on insulator technology. Electron transfer between the central metallic island and the leads is controlled by resonant tunneling through single phosphorus dopants in the barriers. Top gates above the barriers are used control the resonance conditions. Applying radio frequency signals to the gates, non-adiabatic quantized electron pumping is achieved. A simple deterministic model is presented and confirmed by comparing measurements with simulations.
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Submitted 1 March, 2016;
originally announced March 2016.
