Gain Recovery in Heavily Irradiated Low Gain Avalanche Detectors by High Temperature Annealing
Authors:
I. Mandić,
V. Cindro,
A. Gorišek,
B. Hiti,
A. Howard,
Ž. Kljun,
G. Kramberger,
M. Maček Kržmanc,
M. Mikuž,
B. Novak
Abstract:
Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is a…
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Studies of annealing at temperatures up to 450$^\circ$C with LGADs irradiated with neutrons are described. It was found that the performance of LGADs irradiated with 1.5e15 n/cm$^2$ was already improved at 5 minutes of annealing at 250$^\circ$C. Isochronal annealing for 30 minutes in 50$^\circ$C steps between 300$^\circ$C and 450$^\circ$C showed that the largest beneficial effect of annealing is at around 350$^\circ$C. Another set of devices was annealed for 60 minutes at 350$^\circ$C and this annealing significantly increased V$_{\mathrm{gl}}$. The effect is equivalent to reducing the effective acceptor removal constant by a factor of $\sim$ 4. Increase of V$_{\mathrm{gl}}$ is the consequence of increased effective space charge in the gain layer caused by formation of electrically active defects or re-activation of interstitial Boron atoms.
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Submitted 20 March, 2023; v1 submitted 25 January, 2023;
originally announced January 2023.
Annealing effects on operation of thin Low Gain Avalanche Detectors
Authors:
G. Kramberger. V. Cindro,
A. Howard,
Z. Kljun,
I. Mandic,
M. Mikuz
Abstract:
Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Φ_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performanc…
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Several thin Low Gain Avalanche Detectors from Hamamatsu Photonics were irradiated with neutrons to different equivalent fluences up to $Φ_{eq}=3\cdot10^{15}$ cm$^{-2}$. After the irradiation they were annealed at 60$^\circ$C in steps to times $>20000$ minutes. Their properties, mainly full depletion voltage, gain layer depletion voltage, generation and leakage current, as well as their performance in terms of collected charge and time resolution, were determined between the steps.
It was found that the effect of annealing on timing resolution and collected charge is not very large and mainly occurs within the first few tens of minutes. It is a consequence of active initial acceptor concentration decrease in the
gain layer with time, where changes of around 10\% were observed. For any relevant annealing times for detector operation the changes of effective doping concentration in the bulk negligibly influences the performance of the device, due to their small thickness and required high bias voltage operation. At very long annealing times the increase of the effective doping concentration in the bulk leads to a significant increase of the electric field in the gain layer and, by that, to the increase of gain at given voltage. The leakage current decreases in accordance with generation current annealing.
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Submitted 29 May, 2020;
originally announced May 2020.
