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Transport Conductivity of Graphene at RF and Microwave Frequencies
Authors:
S. A. Awan,
A. Lombardo,
A. Colli,
G. Privitera,
T. Kulmala,
J. M. Kivioja,
M. Koshino,
A. C. Ferrari
Abstract:
We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the sa…
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We measure graphene coplanar waveguides from direct current (DC) to 13.5GHz and show that the apparent resistance (in the presence of parasitic impedances) has an quadratic frequency dependence, but the intrinsic conductivity (without the influence of parasitic impedances) is frequency-independent. Consequently, in our devices the real part of the complex alternating current conductivity is the same as the DC value and the imaginary part~0. The graphene channel is modelled as a parallel resistive-capacitive network with a frequency dependence identical to that of the Drude conductivity with momentum relaxation time~2.1ps, highlighting the influence of alternating current (AC) electron transport on the electromagnetic properties of graphene. This can lead to optimized design of high-speed analogue field-effect transistors, mixers, frequency doublers, low-noise amplifiers and radiation detectors.
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Submitted 20 August, 2015;
originally announced August 2015.
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Ex-situ Tunnel Junction Process Technique Characterized by Coulomb Blockade Thermometry
Authors:
M. Prunnila,
M. Meschke,
D. Gunnarsson,
S. Enouz-Vedrenne,
J. M. Kivioja,
J. P. Pekola
Abstract:
We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer give local deviation values of the tunnel junction resistance that…
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We investigate a wafer scale tunnel junction fabrication method, where a plasma etched via through a dielectric layer covering bottom Al electrode defines the tunnel junction area. The ex-situ tunnel barrier is formed by oxidation of the bottom electrode in the junction area. Room temperature resistance mapping over a 150 mm wafer give local deviation values of the tunnel junction resistance that fall below 7.5 % with an average of 1.3 %. The deviation is further investigated by sub-1 K measurements of a device, which has one tunnel junction connected to four arrays consisting of N junctions (N = 41, junction diameter 700 nm). The differential conductance is measured in single-junction and array Coulomb blockade thermometer operation modes. By fitting the experimental data to the theoretical models we found an upper limit for the local tunnel junction resistance deviation of ~5 % for the array of 2N+1 junctions. This value is of the same order as the minimum detectable deviation defined by the accuracy of our experimental setup.
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Submitted 12 June, 2010;
originally announced June 2010.
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Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study
Authors:
M. Prunnila,
S. J. Laakso,
J. M. Kivioja,
J. Ahopelto
Abstract:
We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume i…
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We investigate carrier transport in a single 22 nm-thick double-gated Si quantum well device, which has independent contacts to electrons and holes. Conductance, Hall density and Hall mobility are mapped in a broad double-gate voltage window. When the gate voltage asymmetry is not too large only either electrons or holes occupy the Si well and the Hall mobility shows the fingerprints of volume inversion/accumulation. At strongly asymmetric double-gate voltage an electric field induced electron-hole (EH) bi-layer is formed inside the well. The EH drag resistance R_{he} is explored at balanced carrier densities: R_{he} decreases monotonically from 860 to 37 Ohms when the electron and hole density is varied between ~0.4-1.7x10^{16} m^{-2}.
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Submitted 21 August, 2008;
originally announced August 2008.
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Double Gate Bias Dependency of Low Temperature Conductivity of SiO2-Si-SiO2 Quantum Wells
Authors:
M. Prunnila,
J. M. Kivioja,
J. Ahopelto
Abstract:
The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic features as a function of gate voltages. We show that a strong minimum in conductivity occurs close to the threshold of second sub-band. Another minimum is seen at h…
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The gate bias dependency of conductivity is examined in two Si quantum wells with well thickness tw = 7 nm and tw = 14 nm. The conductivity of the thinner device behaves smoothly whereas the thicker device shows strong non-monotonic features as a function of gate voltages. We show that a strong minimum in conductivity occurs close to the threshold of second sub-band. Another minimum is seen at high electron density at symmetric well potential. This feature is addressed to sub-band wave function delocalization in the quantization direction.
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Submitted 28 November, 2006;
originally announced November 2006.
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Energy Transport between Hole Gas and Crystal Lattice in Diluted Magnetic Semiconductor
Authors:
J. M. Kivioja,
M. Prunnila,
S. Novikov,
P. Kuivalainen,
J. Ahopelto
Abstract:
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.
The temperature dependent energy transfer rate between charge carriers and lattice has been experimentally investigated in ferromagnetic semiconductors. Studied 100 nm thick low-temperature MBE grown Mn_{x}Ga_{1-x}As samples had manganese concentrations x=3.7 % and 4.0 %. Curie temperatures estimated from temperatures of peak resistivities were 60 K and 62 K, respectively.
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Submitted 28 November, 2006;
originally announced November 2006.
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Shot-noise-driven escape in hysteretic Josephson junctions
Authors:
J. P. Pekola,
T. E. Nieminen,
M. Meschke,
J. M. Kivioja,
A. O. Niskanen,
J. J. Vartiainen
Abstract:
We have measured the influence of shot noise on hysteretic Josephson junctions initially in macroscopic quantum tunnelling (MQT) regime. Escape threshold current into the resistive state decreases monotonically with increasing average current through the scattering conductor, which is another tunnel junction. Escape is predominantly determined by excitation due to the wide-band shot noise. This…
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We have measured the influence of shot noise on hysteretic Josephson junctions initially in macroscopic quantum tunnelling (MQT) regime. Escape threshold current into the resistive state decreases monotonically with increasing average current through the scattering conductor, which is another tunnel junction. Escape is predominantly determined by excitation due to the wide-band shot noise. This process is equivalent to thermal activation (TA) over the barrier at temperatures up to about four times above the critical temperature of the superconductor. The presented TA model is in excellent agreement with the experimental results.
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Submitted 18 February, 2005;
originally announced February 2005.
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Observation of transition from escape dynamics to underdamped phase diffusion in a Josephson junction
Authors:
J. M. Kivioja,
T. E. Nieminen,
J. Claudon,
O. Buisson,
F. W. J. Hekking,
J. P. Pekola
Abstract:
We have investigated the dynamics of underdamped Josephson junctions. In addition to the usual crossover between macroscopic quantum tunnelling and thermally activated (TA) behaviour we observe in our samples with relatively small Josephson coupling E_J, for the first time, the transition from TA behaviour to underdamped phase diffusion. Above the crossover temperature the threshold for switchin…
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We have investigated the dynamics of underdamped Josephson junctions. In addition to the usual crossover between macroscopic quantum tunnelling and thermally activated (TA) behaviour we observe in our samples with relatively small Josephson coupling E_J, for the first time, the transition from TA behaviour to underdamped phase diffusion. Above the crossover temperature the threshold for switching into the finite voltage state becomes extremely sharp. We propose a (T,E_J) phase-diagram with various regimes and show that for a proper description of it dissipation and level quantization in a metastable well are crucial.
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Submitted 17 January, 2005;
originally announced January 2005.
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Evidence of Cooper pair pumping with combined flux and voltage control
Authors:
Antti O. Niskanen,
Jani M. Kivioja,
H. Seppa,
Jukka P. Pekola
Abstract:
We have experimentally demonstrated pumping of Cooper pairs in a single-island mesoscopic structure. The island was connected to leads through SQUID (Superconducting Quantum Interference Device) loops. Synchronized flux and voltage signals were applied whereby the Josephson energies of the SQUIDs and the gate charge were tuned adiabatically. From the current-voltage characteristics one can see t…
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We have experimentally demonstrated pumping of Cooper pairs in a single-island mesoscopic structure. The island was connected to leads through SQUID (Superconducting Quantum Interference Device) loops. Synchronized flux and voltage signals were applied whereby the Josephson energies of the SQUIDs and the gate charge were tuned adiabatically. From the current-voltage characteristics one can see that the pumped current increases in 1e steps which is due to quasiparticle poisoning on the measurement time scale, but we argue that the transport of charge is due to Cooper pairs.
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Submitted 29 October, 2004;
originally announced October 2004.
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Direct measurement of the electron-phonon relaxation rate in thin copper films
Authors:
L. J. Taskinen,
J. M. Kivioja,
J. T. Karvonen,
I. J. Maasilta
Abstract:
We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas…
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We have used normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry at sub-Kelvin temperatures. With the help of these thermometers, we have developed an ac-technique to measure the electron-phonon (e-p) scattering rate directly, without any other material or geometry dependent parameters, based on overheating the electron gas. The technique is based on Joule heating the electrons in the frequency range DC-10 MHz, and measuring the electron temperature in DC. Because of the nonlinearity of the electron-phonon coupling with respect to temperature, even the DC response will be affected, when the heating frequency reaches the natural cut-off determined by the e-p scattering rate. Results on thin Cu films show a $T^{4}$ behavior for the scattering rate, in agreement with indirect measurement of similar samples and numerical modeling of the non-linear response.
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Submitted 12 October, 2004;
originally announced October 2004.
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Turnstile behaviour of the Cooper-pair pump
Authors:
J. J. Toppari,
J. M. Kivioja,
J. P. Pekola,
M. T. Savolainen
Abstract:
We have experimentally studied the behaviour of the so-called Cooper pair pump (CPP) with three Josephson junctions, in the limit of small Josephson coupling EJ < EC. These experiments show that the CPP can be operated as a traditional turnstile device yielding a gate-induced current 2ef in the direction of the bias voltage, by applying an RF-signal with frequency f to the two gates in phase, wh…
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We have experimentally studied the behaviour of the so-called Cooper pair pump (CPP) with three Josephson junctions, in the limit of small Josephson coupling EJ < EC. These experiments show that the CPP can be operated as a traditional turnstile device yielding a gate-induced current 2ef in the direction of the bias voltage, by applying an RF-signal with frequency f to the two gates in phase, while residing at the degeneracy node of the gate plane. Accuracy of the CPP during this kind of operation was about 3% and the fundamental Landau-Zener limit was observed to lie above 20 MHz. We have also measured the current pumped through the array by rotating around the degeneracy node in the gate plane. We show that this reproduces the turnstile-kind of behavior. To overcome the contradiction between the obtained e-periodic DC-modulation and a pure 2e-behaviour in the RF-measurements, we base our observations on a general principle that the system always minimises its energy. It suggests that if the excess quasiparticles in the system have a freedom to tunnel, they will organize themselves to the configuration yielding the highest current.
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Submitted 6 November, 2003;
originally announced November 2003.
