-
Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"
Authors:
J. A. Kittl,
M. Houssa,
V. V. Afanasiev,
J. -P. Locquet
Abstract:
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the claims of lack of hysteresis and s-curve trajectory are unfounded.
△ Less
Submitted 1 March, 2020;
originally announced March 2020.
-
A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer
Authors:
J. A. Kittl,
J. -P. Locquet,
M. Houssa,
V. V. Afanasiev
Abstract:
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental eviden…
▽ More
We present a thorough analysis of the foundations of models of stabilization of negative capacitance (NC) in a ferroelectric (FE) layer by capacitance matching to a dielectric layer, which claim that the FE is stabilized in a low polarization state without FE polarization switching (non-switching), showing that the concept is fundamentally flawed and unphysical. We also analyze experimental evidence concluding that there is no data supporting the need to invoke such stabilization; rather, conventional models of ferroelectric polarization switching suffice to account for the effects observed. We analyze experimental evidence that at least in some of the model systems for which this effect has been claimed, categorically rule out stabilized non-switching NC. Microscopic measurements recently published as supporting non-switching stabilized NC actually rule them out, since the ferroelectric in a stack sandwiched between two dielectric layers was found to be in a mixed domain state (high polarizations within each domain) rather than in the low polarization state predicted by non-switching stabilized NC models. Nonetheless, since stabilized NC (corresponding to a minimum in free energy) is not physically impossible, it would be useful to move the research efforts to investigating scenarios and systems in which this effect is possible and expected and assess whether they are useful and practical for low power electronics.
△ Less
Submitted 1 March, 2020;
originally announced March 2020.
-
A Method to Calculate Correlation for Density Functional Theory on a Quantum Processor
Authors:
Ryan Hatcher,
Jorge A. Kittl,
Christopher Bowen
Abstract:
An extension of the Variational Quantum Eigensolver (VQE) method is presented where a quantum computer generates an accurate exchange-correlation potential for a Density Functional Theory (DFT) simulation on classical hardware. The method enables efficient simulations of quantum systems by interweaving calculations on classical and quantum resources. DFT is implemented on classical hardware, which…
▽ More
An extension of the Variational Quantum Eigensolver (VQE) method is presented where a quantum computer generates an accurate exchange-correlation potential for a Density Functional Theory (DFT) simulation on classical hardware. The method enables efficient simulations of quantum systems by interweaving calculations on classical and quantum resources. DFT is implemented on classical hardware, which enables the efficient representation of and operation on quantum systems while being formally exact. The portion of the simulation operating on quantum hardware produces an accurate exchange-correlation potential but only requires relatively short depth quantum circuits.
△ Less
Submitted 13 March, 2019;
originally announced March 2019.
-
High-Accuracy Inference in Neuromorphic Circuits using Hardware-Aware Training
Authors:
Borna Obradovic,
Titash Rakshit,
Ryan Hatcher,
Jorge A. Kittl,
Mark S. Rodder
Abstract:
Neuromorphic Multiply-And-Accumulate (MAC) circuits utilizing synaptic weight elements based on SRAM or novel Non-Volatile Memories (NVMs) provide a promising approach for highly efficient hardware representations of neural networks. NVM density and robustness requirements suggest that off-line training is the right choice for "edge" devices, since the requirements for synapse precision are much l…
▽ More
Neuromorphic Multiply-And-Accumulate (MAC) circuits utilizing synaptic weight elements based on SRAM or novel Non-Volatile Memories (NVMs) provide a promising approach for highly efficient hardware representations of neural networks. NVM density and robustness requirements suggest that off-line training is the right choice for "edge" devices, since the requirements for synapse precision are much less stringent. However, off-line training using ideal mathematical weights and activations can result in significant loss of inference accuracy when applied to non-ideal hardware. Non-idealities such as multi-bit quantization of weights and activations, non-linearity of weights, finite max/min ratios of NVM elements, and asymmetry of positive and negative weight components all result in degraded inference accuracy. In this work, it is demonstrated that non-ideal Multi-Layer Perceptron (MLP) architectures using low bitwidth weights and activations can be trained with negligible loss of inference accuracy relative to their Floating Point-trained counterparts using a proposed off-line, continuously differentiable HW-aware training algorithm. The proposed algorithm is applicable to a wide range of hardware models, and uses only standard neural network training methods. The algorithm is demonstrated on the MNIST and EMNIST datasets, using standard MLPs.
△ Less
Submitted 13 September, 2018;
originally announced September 2018.
-
On the Validity and Applicability of Models of Negative Capacitance and Implications for MOS Applications
Authors:
J. A. Kittl,
B. Obradovic,
D. Reddy,
T. Rakshit,
R. M. Hatcher,
M. S. Rodder
Abstract:
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the framework of a FE polarization switching model. However, there is a large amount of literature attributing this effect to a stabilization of quasi-static (QS) negative…
▽ More
The observation of room temperature sub-60 mV/dec subthreshold slope (SS) in MOSFETs with ferroelectric (FE) layers in the gate stacks or in series with the gate has attracted much attention. Recently, we modeled this effect in the framework of a FE polarization switching model. However, there is a large amount of literature attributing this effect to a stabilization of quasi-static (QS) negative capacitance (NC) in the FE. The technological implications of a stabilized non-switching (NS) QSNC model vs a FE switching model are vastly different; the latter precluding applications to sub-60 mV/dec SS scaled CMOS due to speed limitations and power dissipated in switching. In this letter, we provide a thorough analysis assessing the foundations of models of QSNC, identifying which specific assumptions (ansatz) may be unlikely or unphysical, and analyzing their applicability. We show that it is not reasonable to expect QSNC for two separate capacitors connected in series (with a metal plate between dielectric (DE) and FE layers). We propose a model clarifying under which conditions a QS "apparent NC" for a FE layer in a FE-DE bi-layer stack may be observed, quantifying the requirements of strong interface polarization coupling in addition to capacitance matching. In this regime, our model suggests the FE layer does not behave as a NC layer, simply, the coupling leads to both the DE and FE behaving as high-k DE with similar permittivities. This may be useful for scaled EOT devices but does not lead to sub-60 mV/dec SS.
△ Less
Submitted 25 July, 2018; v1 submitted 3 May, 2018;
originally announced May 2018.
