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Observation of narrow-band $γ$ radiation from a boron-doped diamond superlattice with an 855 MeV electron beam
Authors:
Hartmut Backe,
José Baruchel,
Simon Bénichou,
Rébecca Dowek,
David Eon,
Pierre Everaere,
Lutz Kirste,
Pascal Klag,
Werner Lauth,
Patrik Straňák,
Thu Nhi Tran Caliste
Abstract:
A diamond superlattice with a period length of 3.54 $μ$m was grown on a high quality straight (100) diamond plate with the method of Chemical Vapour Deposition (CVD). A sinusoidal varying boron doping profile resulted in a periodic variation of the lattice constant, and in turn four sinusoidally deformed (110) planes with a period length of 5.0 $μ$m and an amplitude of 0.138 nm. A channeling exper…
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A diamond superlattice with a period length of 3.54 $μ$m was grown on a high quality straight (100) diamond plate with the method of Chemical Vapour Deposition (CVD). A sinusoidal varying boron doping profile resulted in a periodic variation of the lattice constant, and in turn four sinusoidally deformed (110) planes with a period length of 5.0 $μ$m and an amplitude of 0.138 nm. A channeling experiment was performed with the 855 MeV electron beam of the Mainz Microtron MAMI accelerator facility. Part of the impinging electrons perform sinusoidal oscillations resulting in the emission of quasi-monochromatic $γ$ radiation. A clear peak was observed with a large sodium iodide scintillation detector close to the expected photon energy of 1.33 MeV. Gross properties like photon energy, width and intensity of the peak can be reproduced fairly well by idealized Monte-Carlo simulation calculations. Based on the latter, prospects of applying such $γ$ radiation sources are addressed with the example of the photonuclear reaction $^{100}$Mo($γ$,n)$^{99}$Mo at 14.3 MeV to produce the medical important $^{99m}$Tc isotope.
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Submitted 27 May, 2025; v1 submitted 24 April, 2025;
originally announced April 2025.
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Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films
Authors:
Md Redwanul Islam,
Niklas Wolff,
Georg Schönweger,
Tom-Niklas Kreutzer,
Margaret Brown,
Maike Gremmel,
Patrik Straňák,
Lutz Kirste,
Geoff L. Brennecka,
Simon Fichtner,
Lorenz Kienle
Abstract:
This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping…
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This article examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude sub-coercive fields. Microstructure analysis using X-ray diffraction 1and scanning transmission electron microscopy (STEM) revealed no significant structural degradation of the bulk Al0.73Sc0.27N. In case of the maximum O-doped film, the c-axis out-of-plane texture increased by only 20% from 1.8° and chemical mapping revealed a uniform distribution of oxygen incorporation into the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen- to metal-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film quality, thereby making ferroelectric nitrides more suitable for microelectronic applications.
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Submitted 26 November, 2024;
originally announced November 2024.
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Structural and electrical properties of fiber textured and epitaxial molybdenum thin films prepared by magnetron sputter epitaxy
Authors:
Balasubramanian Sundarapandian,
Mohit Raghuwanshi,
Patrik Straňák,
Yuan Yu,
Haiyan Lyu,
Mario Prescher,
Lutz Kirste,
Oliver Ambacher
Abstract:
Molybdenum (Mo) due to its optimal structural, physical, and acoustic properties find application as electrode material in aluminum scandium nitride (AlScN) and aluminum nitride (AlN) based bulk acoustic wave (BAW) resonators. Epitaxial Mo thin films exhibiting low resistivity can improve the performance of the BAW resonator by enhancing both the electromechanical coupling coefficient and quality…
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Molybdenum (Mo) due to its optimal structural, physical, and acoustic properties find application as electrode material in aluminum scandium nitride (AlScN) and aluminum nitride (AlN) based bulk acoustic wave (BAW) resonators. Epitaxial Mo thin films exhibiting low resistivity can improve the performance of the BAW resonator by enhancing both the electromechanical coupling coefficient and quality factor. In this study, we systematically vary the growth temperature of Mo grown on fiber-textured and epitaxial wurtzite-aluminum nitride (AlN) to study the changes in structural and electrical properties of the Mo films. Results show that Mo grown at 700°C on epitaxial AlN exhibit low surface roughness, large average grain diameter, low resistivity, and high crystal quality. XRD pole figure and phi-scan reveal that irrespective of the growth temperature, Mo is fiber textured on fiber-textured AlN, and has three rotational domains on epitaxial AlN. The study shows that the resistivity of Mo reduces with increasing growth temperature, which we relate to increasing average grain diameter. Additionally, we show that fiber-textured Mo has more high angle grain boundaries resulting in consistently higher resistivity than its epitaxial equivalent.
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Submitted 29 October, 2024;
originally announced October 2024.
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Sputtered Aluminum Nitride Waveguides for the Telecommunication Spectrum with less than 0.16 dB/cm Loss
Authors:
Radhakant Singh,
Mohit Raghuwanshi,
Balasubramanian Sundarapandian,
Rijil Thomas,
Lutz Kirste,
Stephan Suckow,
Max Lemme
Abstract:
We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $μ$m buried silicon oxide layer using reactive DC magnetron sputtering at a temperature of 700°C. The resulting uncladded polycrystalline waveguides exhibit propagation losses of 0.137 $\pm$ 0.005 dB/cm at wavelengths of 1310 nm…
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We report the fabrication and characterization of photonic waveguides from sputtered aluminum nitride (AlN). The AlN films were deposited on 6" silicon substrates with a 3 $μ$m buried silicon oxide layer using reactive DC magnetron sputtering at a temperature of 700°C. The resulting uncladded polycrystalline waveguides exhibit propagation losses of 0.137 $\pm$ 0.005 dB/cm at wavelengths of 1310 nm and 0.154 $\pm$ 0.008 dB/cm at a wavelength of 1550 nm in the TE polarization. These results are the best reported for sputtered AlN waveguides in the C-band and the first report in the O-band. These performances are comparable to those of the best-reported AlN waveguides, which are epitaxially grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates. Our findings highlight the potential of sputtered AlN for photonic platforms working in the telecom spectrum.
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Submitted 19 August, 2024;
originally announced August 2024.
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Demonstration and STEM Analysis of Ferroelectric Switching in MOCVD-Grown Single Crystalline Al$_{0.85}$Sc$_{0.15}$N
Authors:
Niklas Wolff,
Georg Schoenweger,
Isabel Streicher,
Md Redwanul Islam,
Nils Braun,
Patrik Stranak,
Lutz Kirste,
Mario Prescher,
Andriy Lotnyk,
Hermann Kohlstedt,
Stefano Leone,
Lorenz Kienle,
Simon Fichtner
Abstract:
Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic metho…
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Wurtzite-type Al$_{1-x}$Sc$_x$N solid solutions grown by metal organic chemical vapour deposition are for the first time confirmed to be ferroelectric. The film with 230 nm thickness and x = 0.15 exhibits a coercive field of 5.5 MV/cm at a measurement frequency of 1.5 kHz. Single crystal quality and homogeneous chemical composition of the film was confirmed by X-ray diffraction spectroscopic methods such as time of flight secondary ion mass spectrometry. Annular bright field scanning transmission electron microscopy served to proof the ferroelectric polarization inversion on unit cell level. The single crystal quality further allowed to image the large-scale domain pattern of a wurtzite-type ferroelectric for the first time, revealing a predominantly cone-like domain shape along the c-axis of the material. As in previous work, this again implies the presence of strong polarization discontinuities along this crystallographic axis, which could be suitable for current transport. The domains are separated by narrow domain walls, for which an upper thickness limit of 3 nm was deduced, but which could potentially be atomically sharp. We are confident that these results will advance the commencing integration of wurtzite-type ferroelectrics to GaN as well as generally III-N based heterostructures and devices.
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Submitted 21 December, 2023;
originally announced December 2023.
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Influence of Different Surface Morphologies on the Performance of High Voltage, Low Resistance Diamond Schottky Diodes
Authors:
Philipp Reinke,
Fouad Benkhelifa,
Lutz Kirste,
Heiko Czap,
Lucas Pinti,
Verena Zürbig,
Volker Cimalla,
Christoph Nebel,
Oliver Ambacher
Abstract:
Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}Ω\text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface morphologies. The morphology (smooth as-grown, hillock-rich, polished) influences the Schottky barrier, the carrier transport properties, and consequently the device p…
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Vertical diamond Schottky diodes with blocking voltages $V_{\text{BD}} > 2.4 \text{ kV}$ and on-resistances $R_{\text{On}} < 400 \text{ m}Ω\text{cm}^{2}$ were fabricated on homoepitaxially grown diamond layers with different surface morphologies. The morphology (smooth as-grown, hillock-rich, polished) influences the Schottky barrier, the carrier transport properties, and consequently the device performance. The smooth as-grown sample exhibited a low reverse current density $J_{\text{Rev}} < 10^{-4} \text{ A}/\text{cm}^{2}$ for reverse voltages up to $2.2 \text{ kV}$. The hillock-rich sample blocked similar voltages with a slight increase in the reverse current density ($J_{\text{Rev}} < 10^{-3} \text{ A}/\text{cm}^{2}$). The calculated 1D-breakdown field, however, was reduced by $30 \text{ } \%$, indicating a field enhancement induced by the inhomogeneous surface. The polished sample demonstrated a similar breakdown voltage and reverse current density as the smooth as-grown sample, suggesting that a polished surface can be suitable for device fabrication. However, a statistical analysis of several diodes of each sample showed the importance of the substrate quality: A high density of defects both reduces the feasible device area and increases the reverse current density. In forward direction, the hillock-rich sample exhibited a secondary Schottky barrier, which could be fitted with a modified thermionic emission model employing the Lambert W-function. Both polished and smooth sample showed nearly ideal thermionic emission with ideality factors $1.08$ and $1.03$, respectively. Compared with literature, all three diodes exhibit an improved Baliga Figure of Merit for diamond Schottky diodes with $V_{\text{BD}} > 2 \text{ kV}$.
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Submitted 26 May, 2020;
originally announced May 2020.
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Microstructural and Optical Emission Properties of Diamond Multiply Twinned Particles
Authors:
Vadim Lebedev,
Taro Yoshikawa,
Christoph Schreyvogel,
Lutz Kirste,
Jürgen Weippert,
Michael Kunzer,
Andreas Graff,
Oliver Ambacher
Abstract:
Multiply twinned particles, MTPs, are fascinating crystallographic entities with a number of controllable properties originating from their symmetry and cyclic structure. In the focus of our studies are diamond MTPs hosting optically active defects, objects demonstrating a high application potential for emerging optoelectronic and quantum devices. In this work, we discuss the growth mechanisms alo…
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Multiply twinned particles, MTPs, are fascinating crystallographic entities with a number of controllable properties originating from their symmetry and cyclic structure. In the focus of our studies are diamond MTPs hosting optically active defects, objects demonstrating a high application potential for emerging optoelectronic and quantum devices. In this work, we discuss the growth mechanisms along with the microstructural and optical properties of the MTPs aggregating high-density of silicon-vacancy complexes on the specific crystal irregularities. It is demonstrated that the silicon impurities incite a rapid growth of MTPs via intensive formation of penetration twins on 100 facets of regular octahedral grains. We also show that the zero-phonon-line emission from the Si color centers embedded in the twin boundaries dominates in photo- and electroluminescence spectra of the MTP-based light-emitting devices defining their steady-state optical properties.
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Submitted 28 April, 2020;
originally announced April 2020.
