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Density functional description of long-range electron Coulomb interactions in bulk SnS
Authors:
Stefanos Giaremis,
Joseph Kioseoglou,
Eleni Chatzikyriakou
Abstract:
A high-throughput benchmarking technique for testing the performance of different exchange-correlation functionals and pseudopotentials is proposed and applied to bulk SnS. It is shown that, contrary to the popular view that the local density approximation can best describe layered materials, a semilocal pseudopotential with a functional having a gradient dependence better described lattice vector…
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A high-throughput benchmarking technique for testing the performance of different exchange-correlation functionals and pseudopotentials is proposed and applied to bulk SnS. It is shown that, contrary to the popular view that the local density approximation can best describe layered materials, a semilocal pseudopotential with a functional having a gradient dependence better described lattice vectors and `tetragonicity' of the lattice. We classify the pseudopotentials based on this value and show that the participation ratio of maximally localized Wannier functions follows the theory which states that more distorted structures have higher anti-bonding hybridization as stabilizing factor. In order to classify pseudopotentials, the local and nonlocal potential contributions to the dynamical Born effective charges are taken for each pseudopotential. Finally, a strategy is proposed for learning exchange-correlation functionals based on the distinction between short and long range parts of the Kohn-Sham potential.
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Submitted 19 May, 2023; v1 submitted 20 February, 2023;
originally announced February 2023.
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Phonon Interference at the Atomic Scale
Authors:
Paul Desmarchelier,
Efstrátios Nikidis,
Yoshiaki Nakamura,
Anne Tanguy,
Joseph Kioseoglou,
Konstantinos Termentzidis
Abstract:
Phonons diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles as voids or amorphous-inclusions. The diffraction patterns caused by these nano-architectured systems of the same order as the phonon wavelengths are similar to the ones predicted by a simple Fresnel-Kirchhoff integr…
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Phonons diffraction and interference patterns are observed at the atomic scale, using molecular dynamics simulations in systems containing crystalline silicon and nanometric obstacles as voids or amorphous-inclusions. The diffraction patterns caused by these nano-architectured systems of the same order as the phonon wavelengths are similar to the ones predicted by a simple Fresnel-Kirchhoff integral, with a few differences due to the nature of the obstacle and the anisotropy of crystalline silicon. These findings give evidence of the wave nature of phonons, can help to a better comprehension of the interaction of phonons with nanoobjects and at long term can be useful for intelligent thermal management and phonon frequency filtering at the nanoscale.
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Submitted 28 July, 2022;
originally announced July 2022.
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Thermal insulation and heat guiding using nanopatterned MoS2
Authors:
Peng Xiao,
Alexandros El Sachat,
Emigdio Chávez Angel,
Giorgos Nikoulis,
Joseph Kioseoglou,
Konstantinos Termentzidis,
Clivia M. Sotomayor Torres,
Marianna Sledzinska
Abstract:
In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away…
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In the modern electronics overheating is one of the major reasons for device failure. Overheating causes irreversible damage to circuit components and can also lead to fire, explosions, and injuries. Accordingly, in the advent of 2D material-based electronics, an understanding of their thermal properties in addition to their electric ones is crucial to enable efficient transfer of excess heat away from the electronic components. In this work we propose structures based on free-standing, few-layer, nanopatterned MoS2 that insulate and guide heat in the in-plane direction. We arrive at these designs via a thorough study of the in-plane thermal conductivity as a function of thickness, porosity, and temperature in both pristine and nanopatterned MoS2 membranes. Two-laser Raman thermometry was employed to measure the thermal conductivities of a set of free-standing MoS2 flakes with diameters greater than 20 um and thicknesses from 5 to 40 nm, resulting in values from 30 to 85 W/mK, respectively. After nanopatterning a square lattice of 100-nm diameter holes with a focused ion beam we have obtained a greater than 10-fold reduction of the thermal conductivities for the period of 500 nm and values below 1 W/mK for the period of 300 nm. The results were supported by equilibrium molecular dynamic simulations for both pristine and nanopatterned MoS2. The selective patterning of certain areas results in extremely large difference in thermal conductivities within the same material. Exploitation of this effect enabled for the first time thermal insulation and heat guiding in the few-layer MoS2. The patterned regions act as high thermal resistors: we obtained a thermal resistance of 4x10-6 m2K/W with only four patterned lattice periods of 300 nm, highlighting the significant potential of MoS2 for thermal management applications.
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Submitted 11 April, 2022;
originally announced April 2022.
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Data-driven simulation and characterisation of gold nanoparticle melting
Authors:
Claudio Zeni,
Kevin Rossi,
Theodore Pavloudis,
Joseph Kioseoglou,
Stefano de Gironcoli,
Richard Palmer,
Francesca Baletto
Abstract:
The simulation and analysis of the thermal stability of nanoparticles, a stepping stone towards their application in technological devices, require fast and accurate force fields, in conjunction with effective characterisation methods. In this work, we develop efficient, transferable, and interpretable machine learning force fields for gold nanoparticles based on data gathered from Density Functio…
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The simulation and analysis of the thermal stability of nanoparticles, a stepping stone towards their application in technological devices, require fast and accurate force fields, in conjunction with effective characterisation methods. In this work, we develop efficient, transferable, and interpretable machine learning force fields for gold nanoparticles based on data gathered from Density Functional Theory calculations. We use them to investigate the thermodynamic stability of gold nanoparticles of different sizes (1 to 6 nm), containing up to 6266 atoms, concerning a solid-liquid phase change through molecular dynamics simulations. We predict nanoparticle melting temperatures in good agreement with available experimental data. Furthermore, we characterize the solid-liquid phase change mechanism employing an unsupervised learning scheme to categorize local atomic environments. We thus provide a data-driven definition of liquid atomic arrangements in the inner and surface regions of a nanoparticle and employ it to show that melting initiates at the outer layers.
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Submitted 22 April, 2022; v1 submitted 1 July, 2021;
originally announced July 2021.
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Decorated dislocations against phonon propagation for thermal management
Authors:
Stefanos Giaremis,
Joseph Kioseoglou,
Mykola Isaiev,
Imad Belabbas,
Philomela Komninou,
Konstantinos Termentzidis
Abstract:
The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the core of dislocations in wurtzite GaN is found to affect the thermal properties of the material, as it leads to a significant decrease of the thermal conductivity…
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The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the core of dislocations in wurtzite GaN is found to affect the thermal properties of the material, as it leads to a significant decrease of the thermal conductivity, along with an enhancement of its anisotropic character. The thermal conductivity of In-decorated dislocations is compared to the ones of pristine GaN, InN, and random and ordered InxGa1-xN alloy, to examine the impact of doping. Results are explained by the stress maps, the bonding properties and the phonon density of states of the aforementioned systems. The decorated dislocations engineering is a novel way to tune, among other transport properties, the effective thermal conductivity of materials at the nanoscale, which can lead to the manufacturing of interesting candidates for thermoelectric or anisotropic thermal dissipation devices.
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Submitted 17 December, 2019;
originally announced December 2019.
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Ab initio investigation of the AlN:Er system
Authors:
Th. Pavloudis,
Valérie Brien,
Joseph Kioseoglou
Abstract:
In the present study an ab initio investigation on the AlN:Er system for concentrations of Er ranging from 0.78 to 12.5 % is presented. The crystallographic localisation of the rare earth atoms in the wurtzite lattice is determined, elucidating previously published experimental deductions, and the existence of a solid solution in the AlN:Er system in this range is confirmed. Er incorporation in th…
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In the present study an ab initio investigation on the AlN:Er system for concentrations of Er ranging from 0.78 to 12.5 % is presented. The crystallographic localisation of the rare earth atoms in the wurtzite lattice is determined, elucidating previously published experimental deductions, and the existence of a solid solution in the AlN:Er system in this range is confirmed. Er incorporation in the tetrahedral and octahedral insertion sites is shown to be thermodynamically metastable and is found to induce shallow states in the bandgaps. The effect of Er concentration on the lattice constants and bandgaps and bandstructures of the ErxAl1-xN ternary compound is presented. Finally, in accordance with experimental specifications, Er incorporation in the AlNO system is also examined.
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Submitted 15 November, 2019;
originally announced November 2019.
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Enhanced thermal conductivity in percolating nanocomposites: a molecular dynamics investigation
Authors:
Konstantinos Termentzidis,
Valentina M. Giordano,
Maria Katsikini,
Eleni C. Paloura,
Gilles Pernot,
David Lacroix,
Ioannis Karakostas,
Joseph Kioseoglou
Abstract:
In this work we present a molecular dynamics investigation of thermal transport in a silica-gallium nitride nanocomposite. A surprising enhancement of the thermal conductivity for crystalline volume fractions larger than 5% is found, which cannot be predicted by an effective medium approach, not even including percolation effects, the model systematically leading to an underestimation of the effec…
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In this work we present a molecular dynamics investigation of thermal transport in a silica-gallium nitride nanocomposite. A surprising enhancement of the thermal conductivity for crystalline volume fractions larger than 5% is found, which cannot be predicted by an effective medium approach, not even including percolation effects, the model systematically leading to an underestimation of the effective thermal conductivity. The behavior can instead be reproduced if an effective volume fraction twice larger than the real one is assumed, which translates in a percolation effect surprisingly stronger than the usual one. Such scenario can be understood in terms of a phonon tunneling between inclusions, enhanced by the iso-orientation of all particles. Indeed, if a misorientation is introduced, the thermal conductivity strongly decreases. We also show that a percolating nanocomposite clearly stand in a different position than other nanocomopsites, where thermal transport is domimnated by the interface scattering, and where parameters such as the interface density play a major role, differently from our case.
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Submitted 19 October, 2018;
originally announced October 2018.
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Ab initio quantum transport in AB-stacked bilayer penta-silicene using atomic orbitals
Authors:
Eleni Chatzikyriakou,
Padeleimon Karafiloglou,
Joseph Kioseoglou
Abstract:
The current carried by a material subject to an electric field is microscopically inhomogeneous and can be modelled using scattering theory, in which electrons undergo collisions with the microscopic objects they encounter. We herein present a methodology for parameter-free calculations of the current density from first-principles using Density Functional Theory, Wannier functions and scattering m…
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The current carried by a material subject to an electric field is microscopically inhomogeneous and can be modelled using scattering theory, in which electrons undergo collisions with the microscopic objects they encounter. We herein present a methodology for parameter-free calculations of the current density from first-principles using Density Functional Theory, Wannier functions and scattering matrices. The methodology is used on free-standing AB-stacked bilayer penta-silicene. This new Si allotrope has been proposed to have a higher stability than any of its hexagonal bilayer counterparts. Furthermore, its semiconducting properties make it ideal for use in electronic components. We unveil the role of the pz orbitals in the transport through a three-dimensional quantum wire and present current density streamlines that reveal the locations of the highest charge flow. The present methodology can be expanded to accommodate many electron degrees of freedom, the application of electromagnetic fields and many other physical phenomena involved in device operation.
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Submitted 14 October, 2018; v1 submitted 10 September, 2018;
originally announced September 2018.
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Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN
Authors:
Konstantinos Termentzidis,
Mykola Isaiev,
Anastasiia Salnikova,
Imad Belabbas,
David Lacroix,
Joseph Kioseoglou
Abstract:
We report on thermal transport properties of wurtzite GaN in the presence of dislocations, by using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration were analyzed and found to reduce considerably the thermal conductivity while impacting its temperature dependence in a different manner. We demonstrate that isolated screw dislocations reduce the thermal…
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We report on thermal transport properties of wurtzite GaN in the presence of dislocations, by using molecular dynamics simulations. A variety of isolated dislocations in a nanowire configuration were analyzed and found to reduce considerably the thermal conductivity while impacting its temperature dependence in a different manner. We demonstrate that isolated screw dislocations reduce the thermal conductivity by a factor of two, while the influence of edge dislocations is less pronounced. The relative reduction of thermal conductivity is correlated with the strain energy of each of the five studied types of dislocations and the nature of the bonds around the dislocation core. The temperature dependence of the thermal conductivity follows a physical law described by a T$^{-1}$ variation in combination with an exponent factor which depends on the material's nature, the type and the structural characteristics of the dislocation's core. Furthermore, the impact of the dislocations density on the thermal conductivity of bulk GaN is examined. The variation and even the absolute values of the total thermal conductivity as a function of the dislocation density is similar for both types of dislocations. The thermal conductivity tensors along the parallel and perpendicular directions to the dislocation lines are analyzed. The discrepancy of the anisotropy of the thermal conductivity grows in increasing the density of dislocations and it is more pronounced for the systems with edge dislocations.
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Submitted 24 April, 2017;
originally announced April 2017.
