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Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots
Authors:
David Fricker,
Paola Atkinson,
Mihail I Lepsa,
Zheng Zeng,
András Kovács,
Lidia Kibkalo,
Rafal E Dunin-Borkowski,
Beata E. Kardynał
Abstract:
Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of p…
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Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their performance. Here, we investigate wetting layer formation during quantum dot growth by the alternative droplet epitaxy technique. We use a combination of photoluminescence excitation spectroscopy, lifetime measurements, and transmission electron microscopy to identify the presence of an InGaAs wetting layer in these droplet epitaxy quantum dots, even in the absence of distinguishable wetting layer photoluminescence. We observe that increasing the amount of Ga deposited on a GaAs (100) surface prior to the growth of InGaAs quantum dots leads to a significant reduction in the emission wavelength of the wetting layer to the point where it can no longer be distinguished from the GaAs acceptor peak emission in photoluminescence measurements.
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Submitted 4 June, 2022;
originally announced June 2022.
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In-plane magnetic field-driven symmetry breaking in topological insulator-based three-terminal junctions
Authors:
Jonas Kölzer,
Kristof Moors,
Abur R. Jalil,
Erik Zimmermann,
Daniel Rosenbach,
Lidia Kibkalo,
Peter Schüffelgen,
Gregor Mussler,
Detlev Grützmacher,
Thomas L. Schmidt,
Hans Lüth,
Thomas Schäpers
Abstract:
Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an…
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Topological surface states of three-dimensional topological insulator nanoribbons and their distinct magnetoconductance properties are promising for topoelectronic applications and topological quantum computation. A crucial building block for nanoribbon-based circuits are three-terminal junctions. While the transport of topological surface states on a planar boundary is not directly affected by an in-plane magnetic field, the orbital effect cannot be neglected when the surface states are confined to the boundary of a nanoribbon geometry. Here, we report on the magnetotransport properties of such three-terminal junctions. We observe a dependence of the current on the in-plane magnetic field, with a distinct steering pattern of the surface state current towards a preferred output terminal for different magnetic field orientations. We demonstrate that this steering effect originates from the orbital effect, trapping the phase-coherent surface states in the different legs of the junction on opposite sides of the nanoribbon and breaking the left-right symmetry of the transmission across the junction. The reported magnetotransport properties demonstrate that an in-plane magnetic field is not only relevant but also very useful for the characterization and manipulation of transport in three-dimensional topological insulator nanoribbon-based junctions and circuits, acting as a topoelectric current switch.
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Submitted 22 December, 2021; v1 submitted 30 December, 2020;
originally announced December 2020.
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Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
Authors:
Peter Schüffelgen,
Daniel Rosenbach,
Chuan Li,
Tobias Schmitt,
Michael Schleenvoigt,
Abdur R. Jalil,
Jonas Kölzer,
Meng Wang,
Benjamin Bennemann,
Umut Parlak,
Lidia Kibkalo,
Martina Luysberg,
Gregor Mussler,
Alexander. A. Golubov,
Alexander Brinkman,
Thomas Schäpers,
Detlev Grützmacher
Abstract:
Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. H…
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Hybrid devices comprised of topological insulator (TI) nanostructures in proximity to s-wave superconductors (SC) are expected to pave the way towards topological quantum computation. Fabrication under ultra-high vacuum conditions is necessary to attain high quality of TI-SC hybrid devices, because the physical surfaces of V-VI three-dimensional TIs suffer from degradation at ambient conditions. Here, we present an in-situ process, which allows to fabricate such hybrids by combining molecular beam epitaxy and stencil lithography. As-prepared Josephson junctions show nearly perfect interface transparency and very large $I_CR_N$ products. The Shapiro response of radio frequency measurements indicates the presence of gapless Andreev bound states, so-called Majorana bound states.
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Submitted 20 October, 2018; v1 submitted 5 November, 2017;
originally announced November 2017.
