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Metallicity-driven polar transitions in topological epilayers
Authors:
Eduardo D. Stefanato,
Nicolas M. Kawahala,
Bianca A. Kawata,
Paulo H. O. Rappl,
Eduardo Abramof,
Felix G. G. Hernandez
Abstract:
Polar metals, materials that exhibit both electric polarization and high conductivity, can also host topological phases. Because free carriers strongly suppress distortive polar order and change the Fermi level, controlling charge dynamics is crucial for simultaneously tuning ferroelectric and topological phases in the same material. Here, we explore the experimental conditions that enable access…
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Polar metals, materials that exhibit both electric polarization and high conductivity, can also host topological phases. Because free carriers strongly suppress distortive polar order and change the Fermi level, controlling charge dynamics is crucial for simultaneously tuning ferroelectric and topological phases in the same material. Here, we explore the experimental conditions that enable access to these phases in bismuth-doped Pb$_{1-x}$Sn$_x$Te epilayers. For samples in the topological phase at $x = 0.5$, we use terahertz time-domain spectroscopy to evaluate their complex permittivity as a function of temperature. We observe a non-monotonic variation in carrier concentration with bismuth doping, indicating a change in carrier type. By tracking the transverse optical phonon mode, we identify a ferroelectric phase transition when distortive polar order emerges below a critical temperature that depends on carrier concentration. We show that bismuth doping controls the metallicity-dependent order parameters in the softening and hardening phases. Our work demonstrates a tunable platform for engineering exotic states of matter that integrate metallicity, ferroelectricity and topology.
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Submitted 27 March, 2025;
originally announced March 2025.
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Shaping terahertz waves using anisotropic shear modes in a van der Waals mineral
Authors:
Nicolas M. Kawahala,
Daniel A. Matos,
Raphaela de Oliveira,
Raphael Longuinhos,
Jenaina Ribeiro-Soares,
Ingrid D. Barcelos,
Felix G. G. Hernandez
Abstract:
Naturally occurring van der Waals (vdW) materials are currently attracting significant interest due to their potential as low-cost sources of two-dimensional materials. Valuable information on vdW materials' interlayer interactions is present in their low-frequency rigid-layer phonon spectra, which are experimentally accessible by terahertz spectroscopy techniques. In this work, we have used polar…
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Naturally occurring van der Waals (vdW) materials are currently attracting significant interest due to their potential as low-cost sources of two-dimensional materials. Valuable information on vdW materials' interlayer interactions is present in their low-frequency rigid-layer phonon spectra, which are experimentally accessible by terahertz spectroscopy techniques. In this work, we have used polarization-sensitive terahertz time-domain spectroscopy to investigate a bulk sample of the naturally abundant, large bandgap vdW mineral clinochlore. We observed a strong and sharp anisotropic resonance in the complex refractive index spectrum near 1.13 THz, consistent with our density functional theory predictions for shear modes. Polarimetry analysis revealed that the shear phonon anisotropy reshapes the polarization state of transmitted THz waves, inducing Faraday rotation and ellipticity. Furthermore, we used Jones formalism to discuss clinochlore phononic symmetries and describe our observations in terms of its eigenstates of polarization. These results highlight the potential of exploring vdW minerals as central building blocks for vdW heterostructures with compelling technological applications.
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Submitted 27 September, 2024;
originally announced September 2024.
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Electrical control of spin relaxation anisotropy during drift transport in a two-dimensional electron gas
Authors:
F. G. G. Hernandez,
G. J. Ferreira,
M. Luengo-Kovac,
V. Sih,
N. M. Kawahala,
G. M. Gusev,
A. K. Bakarov
Abstract:
Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investiga…
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Spin relaxation was studied in a two-dimensional electron gas confined in a wide GaAs quantum well. Recently, the control of the spin relaxation anisotropy by diffusive motion was first shown in D. Iizasa et al., arXiv:2006.08253 (2020). Here, we demonstrate electrical control by drift transport in a system with two-subbands occupied. The combined effect of in-plane and gate voltages was investigated using time-resolved Kerr rotation. The measured relaxation time present strong anisotropy with respect to the transport direction. For an in-plane accelerating electric field along $\left[110\right]$, the lifetime was strongly suppressed irrespective of the applied gate voltage. Remarkably, for transport along $\left[1\bar{1}0\right]$, the data shows spin lifetime that was gate-dependent and longer than in the $\left[110\right]$ direction regardless of the in-plane voltage. In agreement, independent results of anisotropic spin precession frequencies are also presented. Nevertheless, the long spin lifetime, strong anisotropy and drift response seen in the data are beyond the existing models for spin drift and diffusion.
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Submitted 31 August, 2020; v1 submitted 20 July, 2020;
originally announced July 2020.
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Experimental analysis of the spin-orbit coupling dependence on the drift velocity of a spin packet
Authors:
N. M . Kawahala,
F. C. D. Moraes,
G. M. Gusev,
A. K. Bakarov,
F. G. G. Hernandez
Abstract:
Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and lon…
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Spin transport was studied in a two-dimensional electron gas hosted in a wide GaAs quantum well occupying two subbands. Using space and time Kerr rotation microscopy to image drifting spin packets under an in-plane accelerating electric field, optical injection and detection of spin polarization were achieved in a pump-probe configuration. The experimental data exhibited high spin mobility and long spin lifetimes allowing to obtain the spin-orbit fields as a function of the spin velocities. Surprisingly, above moderate electric fields of 0.4V/cm with velocities higher than 2$μ$m/ns, we observed a dependence of both bulk and structure-related spin-orbit interactions on the velocity magnitude. A remarkable feature is the increase of the cubic Dresselhaus term to approximately half of the linear coupling when the velocity is raised to 10$μ$m/ns. In contrast, the Rashba coupling for both subbands decreases to about half of its value in the same range. These results yield new information for the application of drift models in spin-orbit fields and about limitations for the operation of spin transistors.
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Submitted 8 June, 2020; v1 submitted 30 May, 2020;
originally announced June 2020.
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Macroscopic transverse drift of long current-induced spin coherence in two-dimensional electron gases
Authors:
F. G. G. Hernandez,
S. Ullah,
G. J. Ferreira,
N. M. Kawahala,
G. M. Gusev,
A. K. Bakarov
Abstract:
We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hal…
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We imaged the transport of current-induced spin coherence in a two-dimensional electron gas confined in a triple quantum well. Nonlocal Kerr rotation measurements, based on the optical resonant amplification of the electrically-induced polarization, revealed a large spatial variation of the electron g factor and the efficient generation of a current controlled spin-orbit field in a macroscopic Hall bar device. We observed coherence times in the nanoseconds range transported beyond half-millimeter distances in a direction transverse to the applied electric field. The measured long spin transport length can be explained by two material properties: large mean free path for charge diffusion in clean systems and enhanced spin-orbit coefficients in the triple well.
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Submitted 14 July, 2016; v1 submitted 22 May, 2016;
originally announced May 2016.