Showing 1–12 of 12 results for author: Kaverzin, A A

Negative longitudinal resistance of monolayer graphene in the quantum Hall regime

Authors: Alexey A. Kaverzin, Shunsuke Daimon, Takashi Kikkawa, Tomi Ohtsuki, Eiji Saitoh

Abstract: In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance r_xx. Finite scattering between the counter-propagating edge states, when the topological protection is broken, commonly results in… ▽ More In the quantum Hall regime the charge current is carried by ideal one-dimensional edge channels where the backscattering is prohibited by topology. This results in the constant potential along the edge of the Hall bar leading to zero 4-terminal longitudinal resistance r_xx. Finite scattering between the counter-propagating edge states, when the topological protection is broken, commonly results in r_xx > 0. However, a local disorder, if allowing intersection of the edge states, can result in a counter-intuitive scenario when r_xx<0. In this work we report the observation and a systematic study of such unconventional negative longitudinal resistance seen in an encapsulated monolayer graphene Hall bar device measured in the quantum Hall regime. We supplement our findings with the numerical calculations which allow us to outline the conditions necessary for the appearance of negative r_xx and to exclude the macroscopic disorder (contamination bubble) as the main origin of it. △ Less

Submitted 20 May, 2024; v1 submitted 8 May, 2024; originally announced May 2024.

Journal ref: Appl. Phys. Lett. 124, 203103 (2024)

Fabrication of damage-free and/or contamination-free sub-um electrodes using PMMA masks

Authors: Alexey A. Kaverzin, Bart J. van Wees, Eiji Saitoh

Abstract: Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overall efficiency of a certain developed technology and thus considerably narrow the range or fully block its practical application. On the other hand in… ▽ More Quality of the electrical contacts and interfaces in various metal/semiconductor/insulator heterostructures is one of the pivotal aspects in both applied and fundamental research areas. For instance, non-optimal contact resistance can limit the overall efficiency of a certain developed technology and thus considerably narrow the range or fully block its practical application. On the other hand in fundamental research it is often the case that the manifestation of targeted phenomenon crucially depends on the level of contamination in the fabricated experimental samples. Here we offer a set of recipes that are aimed at contamination-free and damage-free fabrication of the devices, mostly developed for the two dimensional materials, but nevertheless applicable for a wider range of the systems, where the quality of the interfaces and/or non-invasiveness of the fabrication recipes are important. Our recipes are based on the preparation of the flexible PMMA membranes, with the help of which we can prepare residue-free or damage-free electrical connections to the studied material. △ Less

Submitted 17 November, 2023; originally announced November 2023.

Cryogenic spin Peltier effect detected by a RuO$_2$-AlO$_x$ on-chip microthermometer

Authors: Takashi Kikkawa, Haruka Kiguchi, Alexey A. Kaverzin, Ryo Takahashi, Eiji Saitoh

Abstract: We report electric detection of the spin Peltier effect (SPE) in a bilayer consisting of a Pt film and a Y$_{3}$Fe$_5$O$_{12}$ (YIG) single crystal at the cryogenic temperature $T$ as low as 2 K based on a RuO$_2$$-$AlO$_x$ on-chip thermometer film. By means of a reactive co-sputtering technique, we successfully fabricated RuO$_2$$-$AlO$_x$ films having a large temperature coefficient of resistanc… ▽ More We report electric detection of the spin Peltier effect (SPE) in a bilayer consisting of a Pt film and a Y$_{3}$Fe$_5$O$_{12}$ (YIG) single crystal at the cryogenic temperature $T$ as low as 2 K based on a RuO$_2$$-$AlO$_x$ on-chip thermometer film. By means of a reactive co-sputtering technique, we successfully fabricated RuO$_2$$-$AlO$_x$ films having a large temperature coefficient of resistance (TCR) of $\sim 100\% ~\textrm{K}^{-1}$ at around $2~\textrm{K}$. By using the RuO$_2$$-$AlO$_x$ film as an on-chip temperature sensor for a Pt/YIG device, we observe a SPE-induced temperature change on the order of sub-$μ\textrm{K}$, the sign of which is reversed with respect to the external magnetic field $B$ direction. We found that the SPE signal gradually decreases and converges to zero by increasing $B$ up to $10~\textrm{T}$. The result is attributed to the suppression of magnon excitations due to the Zeeman-gap opening in the magnon dispersion of YIG, whose energy much exceeds the thermal energy at 2 K. △ Less

Submitted 3 November, 2023; originally announced November 2023.

Comments: Editors' Suggestion, 11 pages, 7 figures

Journal ref: Phys. Rev. Applied 20, 054006 (2023)

Towards fully two-dimensional spintronic devices

Authors: Alexey A. Kaverzin, Talieh S. Ghiasi, Avalon H. Dismukes, Xavier Roy, Bart J. van Wees

Abstract: Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proxim… ▽ More Within the field of spintronics major efforts are directed towards developing applications for spin-based transport devices made fully out of two-dimensional (2D) materials. In this work we present an experimental realization of a spin-valve device where the generation of the spin signal is exclusively attributed to the spin-dependent conductivity of the magnetic graphene resulting from the proximity of an interlayer antiferromagnet, CrSBr. We clearly demonstrate that the usage of the conventional 3D magnetic contacts, that are commonly air-sensitive and incompatible with practical technologies, can be fully avoided when graphene/CrSBr heterostructures are employed. Moreover, apart from providing exceptionally long spin relaxation length, the usage of graphene for both generation and transport of the spin allows to automatically avoid the conductivity mismatch between the source and the channel circuits that has to be considered when using conventional low-resistive contacts. Our results address a necessary step in the engineering of spintronic circuitry out of layered materials and precede further developments in the area of complex spin-logic devices. Moreover, we introduce a fabrication procedure where we designed and implemented a recipe for the preparation of electrodes via a damage-free technique that offers an immediate advantage in the fields of air-sensitive and delicate organic materials. △ Less

Submitted 20 February, 2022; originally announced February 2022.

Electrical and Thermal Generation of Spin Currents by Magnetic Graphene

Authors: Talieh S. Ghiasi, Alexey A. Kaverzin, Avalon H. Dismukes, Dennis K. de Wal, Xavier Roy, Bart J. van Wees

Abstract: The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) materials that provide large spin polarization of charge current together with the long-distance transfer of the spin information. Here, for the first time… ▽ More The demand for compact, high-speed and energy-saving circuitry urges higher efficiency of spintronic devices that can offer a viable alternative for the current electronics. The route towards this goal suggests implementing two-dimensional (2D) materials that provide large spin polarization of charge current together with the long-distance transfer of the spin information. Here, for the first time, we experimentally demonstrate a large spin polarization of the graphene conductivity ($\approx 14\%$) arising from a strong induced exchange interaction in proximity to a 2D layered antiferromagnetic. The strong coupling of charge and spin currents in graphene with high efficiency of spin current generation, comparable to that of metallic ferromagnets, together with the observation of spin-dependent Seebeck and anomalous Hall effects, all consistently confirm the magnetic nature of graphene. The high sensitivity of spin transport in graphene to the magnetization of the outermost layer of the adjacent interlayer antiferromagnet, also provides a tool to read out a single magnetic sub-lattice. The first time observations of the electrical and thermal generation of spin currents by magnetic graphene suggest it as the ultimate building block for ultra-thin magnetic memory and sensory devices, combining gate tunable spin-dependent conductivity, long-distance spin transport and spin-orbit coupling all in a single 2D material. △ Less

Submitted 30 July, 2020; originally announced July 2020.

Journal ref: Nature Nanotechnology, 2021

Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers

Authors: J. Ingla-Aynés, A A. Kaverzin, B. J. van Wees

Abstract: Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current se… ▽ More Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current selectivities up to 102 can be achieved for measurements over a distance of 10μm under a moderate drift current density of 20μA/μm, meaning that the spin current in the arm that is off is only 1% of the current in the arm that is on. To illustrate the versatility of this approach, we show similar efficiencies in a device with four outputs and the possibility of multiplexer operation using spin drift. Finally, we explain how the effect can be optimized in graphene and two-dimensional semiconductors. △ Less

Submitted 23 April, 2020; originally announced April 2020.

Journal ref: Phys. Rev. Applied 10, 044073 (2018)

Charge-to-Spin Conversion by the Rashba-Edelstein Effect in 2D van der Waals Heterostructures up to Room Temperature

Authors: Talieh S. Ghiasi, Alexey A. Kaverzin, Patrick J. Blah, Bart J. van Wees

Abstract: The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate f… ▽ More The proximity of a transition metal dichalcogenide (TMD) to graphene imprints a rich spin texture in graphene and complements its high quality charge/spin transport by inducing spin-orbit coupling (SOC). Rashba and valley-Zeeman SOCs are the origin of charge-to-spin conversion mechanisms such as Rashba-Edelstein effect (REE) and spin Hall effect (SHE). In this work, we experimentally demonstrate for the first time charge-to-spin conversion due to the REE in a monolayer WS2-graphene van der Waals heterostructure. We measure the current-induced spin polarization up to room temperature and control it by a gate electric field. Our observation of the REE and inverse of the effect (IREE) is accompanied by the SHE which we discriminate by symmetry-resolved spin precession under oblique magnetic fields. These measurements also allow for quantification of the efficiencies of charge-to-spin conversion by each of the two effects. These findings are a clear indication of induced Rashba and valley-Zeeman SOC in graphene that lead to generation of spin accumulation and spin current without using ferromagnetic electrodes. These realizations have considerable significance for spintronic applications, providing accessible routes towards all-electrical spin generation and manipulation in two-dimensional materials. △ Less

Submitted 3 May, 2019; originally announced May 2019.

Journal ref: Nano Lett.2019

Bias dependent spin injection into graphene on YIG through bilayer hBN tunnel barriers

Authors: J. C. Leutenantsmeyer, T. Liu, M. Gurram, A. A. Kaverzin, B. J. van Wees

Abstract: We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or… ▽ More We study the spin injection efficiency into single and bilayer graphene on the ferrimagnetic insulator Yttrium-Iron-Garnet (YIG) through an exfoliated tunnel barrier of bilayer hexagonal boron nitride (hBN). The contacts of two samples yield a resistance-area product between 5 and 30 k$Ωμ$m$^2$. Depending on an applied DC bias current, the magnitude of the non-local spin signal can be increased or suppressed below the noise level. The spin injection efficiency reaches values from -60% to +25%. The results are confirmed with both spin valve and spin precession measurements. The proximity induced exchange field is found in sample A to be (85 $\pm$ 30) mT and in sample B close to the detection limit. Our results show that the exceptional spin injection properties of bilayer hBN tunnel barriers reported by Gurram et al. are not limited to fully encapsulated graphene systems but are also valid in graphene/YIG devices. This further emphasizes the versatility of bilayer hBN as an efficient and reliable tunnel barrier for graphene spintronics. △ Less

Submitted 23 July, 2018; originally announced July 2018.

Comments: 9 pages, 6 figures, 5 supplementary figures

Journal ref: Phys. Rev. B 98, 125422, (2018)

Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures

Authors: Talieh S. Ghiasi, Josep Ingla-Aynés, Alexey A. Kaverzin, Bart J. van Wees

Abstract: Van-der-Waals heterostructures have become a paradigm for designing new materials and devices, in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition metal dichalcogenide (TMD) is an excellent complement to graphene (Gr), since the high quality of charge and spin transport in Gr is enriched with the large spin-orbit c… ▽ More Van-der-Waals heterostructures have become a paradigm for designing new materials and devices, in which specific functionalities can be tailored by combining the properties of the individual 2D layers. A single layer of transition metal dichalcogenide (TMD) is an excellent complement to graphene (Gr), since the high quality of charge and spin transport in Gr is enriched with the large spin-orbit coupling of the TMD via proximity effect. The controllable spin-valley coupling makes these heterostructures particularly attractive for spintronic and opto-valleytronic applications. In this work, we study spin precession in a monolayer MoSe2/Gr heterostructure and observe an unconventional, dramatic modulation of the spin signal, showing one order of magnitude longer lifetime of out-of-plane spins (40 ps) compared with that of in-plane spins (3.5 ps). This demonstration of a large spin lifetime anisotropy in TMD/Gr heterostructures, is a direct evidence of induced spin-valley coupling in Gr and provides an accessible route for manipulation of spin dynamics in Gr, interfaced with TMDs. △ Less

Submitted 14 August, 2017; originally announced August 2017.

Comments: Main manuscript(6 pages, 3 figures), supplementary info(19 pages, 10 figures)

Proximity induced room-temperature ferromagnetism in graphene probed with spin currents

Authors: J. C. Leutenantsmeyer, A. A. Kaverzin, M. Wojtaszek, B. J. van Wees

Abstract: The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms, and shaping of graphene into nanoribbons with well-defined zigzag edges. A more robust and less invasive method utilizes the introduction of an exchange intera… ▽ More The introduction and control of ferromagnetism in graphene opens up a range of new directions for fundamental and applied studies. Several approaches have been pursued so far, such as introduction of defects, functionalization with adatoms, and shaping of graphene into nanoribbons with well-defined zigzag edges. A more robust and less invasive method utilizes the introduction of an exchange interaction by a ferromagnetic insulator in proximity with graphene. Here we present a direct measurement of the exchange interaction in room temperature ferromagnetic graphene. We study the spin transport in exfoliated graphene on a yttrium-iron-garnet substrate where the observed spin precession clearly indicates the presence and strength of an exchange field that is an unambiguous evidence of induced ferromagnetism. We describe the results with a modified Bloch diffusion equation and extract an average exchange field of the order of 0.2 T. Further, we demonstrate that a proximity induced 2D ferromagnet can efficiently modulate a spin current by controlling the direction of the exchange field. These results can create a building block for magnetic-gate tuneable spin transport in one-atom-thick spintronic devices. △ Less

Submitted 5 January, 2016; originally announced January 2016.

Journal ref: 2D Materials 4, 014001 (2017)

Impurities as a source of flicker noise in graphene

Authors: A. A. Kaverzin, A. S. Mayorov, A. Shytov, D. W. Horsell

Abstract: We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier concentration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms.… ▽ More We experimentally study the effect of different scattering potentials on the flicker noise observed in graphene devices on silica substrates. The noise in nominally identical devices is seen to behave in two distinct ways as a function of carrier concentration, changing either monotonically or nonmonotonically. We attribute this to the interplay between long- and short-range scattering mechanisms. Water is found to significantly enhance the noise magnitude and change the type of the noise behaviour. By using a simple model, we show that water is a source of long-range scattering. △ Less

Submitted 18 July, 2011; originally announced July 2011.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 85, 075435 (2012) [5 pages]

Electrochemical doping of graphene

Authors: A. A. Kaverzin, S. M. Strawbridge, A. S. Price, F. Withers, A. K. Savchenko, D. W. Horsell

Abstract: The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of… ▽ More The electrical properties of graphene are known to be modified by chemical species that interact with it. We investigate the effect of doping of graphene-based devices by toluene (C6H5CH3). We show that this effect has a complicated character. Toluene is seen to act as a donor, transferring electrons to the graphene. However, the degree of doping is seen to depend on the magnitude and polarity of an electric field applied between the graphene and a nearby electrode. This can be understood in terms of an electrochemical reaction mediated by the graphene crystal. △ Less

Submitted 22 October, 2010; originally announced October 2010.

Comments: 15 pages, 7 figures