Showing 1–50 of 53 results for author: Katine, J A

High-performance and reliable probabilistic Ising machine based on simulated quantum annealing

Authors: Eleonora Raimondo, Esteban Garzón, Yixin Shao, Andrea Grimaldi, Stefano Chiappini, Riccardo Tomasello, Noraica Davila-Melendez, Jordan A. Katine, Mario Carpentieri, Massimo Chiappini, Marco Lanuzza, Pedram Khalili Amiri, Giovanni Finocchio

Abstract: Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorith… ▽ More Probabilistic computing with pbits is emerging as a computational paradigm for machine learning and for facing combinatorial optimization problems (COPs) with the so-called probabilistic Ising machines (PIMs). From a hardware point of view, the key elements that characterize a PIM are the random number generation, the nonlinearity, the network of coupled pbits, and the energy minimization algorithm. Regarding the latter, in this work we show that PIMs using the simulated quantum annealing (SQA) schedule exhibit better performance as compared to simulated annealing and parallel tempering in solving a number of COPs, such as maximum satisfiability problems, planted Ising problem, and travelling salesman problem. Additionally, we design and simulate the architecture of a fully connected CMOS based PIM able to run the SQA algorithm having a spin-update time of 8 ns with a power consumption of 0.22 mW. Our results also show that SQA increases the reliability and the scalability of PIMs by compensating for device variability at an algorithmic level enabling the development of their implementation combining CMOS with different technologies such as spintronics. This work shows that the characteristics of the SQA are hardware agnostic and can be applied in the co-design of any hybrid analog digital Ising machine implementation. Our results open a promising direction for the implementation of a new generation of reliable and scalable PIMs. △ Less

Submitted 17 March, 2025; originally announced March 2025.

Integrated probabilistic computer using voltage-controlled magnetic tunnel junctions as its entropy source

Authors: Christian Duffee, Jordan Athas, Yixin Shao, Noraica Davila Melendez, Eleonora Raimondo, Jordan A. Katine, Kerem Y. Camsari, Giovanni Finocchio, Pedram Khalili Amiri

Abstract: Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic… ▽ More Probabilistic Ising machines (PIMs) provide a path to solving many computationally hard problems more efficiently than deterministic algorithms on von Neumann computers. Stochastic magnetic tunnel junctions (S-MTJs), which are engineered to be thermally unstable, show promise as entropy sources in PIMs. However, scaling up S-MTJ-PIMs is challenging, as it requires fine control of a small magnetic energy barrier across large numbers of devices. In addition, non-spintronic components of S-MTJ-PIMs to date have been primarily realized using general-purpose processors or field-programmable gate arrays. Reaching the ultimate performance of spintronic PIMs, however, requires co-designed application-specific integrated circuits (ASICs), combining CMOS with spintronic entropy sources. Here we demonstrate an ASIC in 130 nm foundry CMOS, which implements integer factorization as a representative hard optimization problem, using PIM-based invertible logic gates realized with 1143 probabilistic bits. The ASIC uses stochastic bit sequences read from an adjacent voltage-controlled (V-) MTJ chip. The V-MTJs are designed to be thermally stable in the absence of voltage, and generate random bits on-demand in response to 10 ns pulses using the voltage-controlled magnetic anisotropy effect. We experimentally demonstrate the chip's functionality and provide projections for designs in advanced nodes, illustrating a path to millions of probabilistic bits on a single CMOS+V-MTJ chip. △ Less

Submitted 10 December, 2024; originally announced December 2024.

Implementation of a Binary Neural Network on a Passive Array of Magnetic Tunnel Junctions

Authors: Jonathan M. Goodwill, Nitin Prasad, Brian D. Hoskins, Matthew W. Daniels, Advait Madhavan, Lei Wan, Tiffany S. Santos, Michael Tran, Jordan A. Katine, Patrick M. Braganca, Mark D. Stiles, Jabez J. McClelland

Abstract: The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magn… ▽ More The increasing scale of neural networks and their growing application space have produced demand for more energy- and memory-efficient artificial-intelligence-specific hardware. Avenues to mitigate the main issue, the von Neumann bottleneck, include in-memory and near-memory architectures, as well as algorithmic approaches. Here we leverage the low-power and the inherently binary operation of magnetic tunnel junctions (MTJs) to demonstrate neural network hardware inference based on passive arrays of MTJs. In general, transferring a trained network model to hardware for inference is confronted by degradation in performance due to device-to-device variations, write errors, parasitic resistance, and nonidealities in the substrate. To quantify the effect of these hardware realities, we benchmark 300 unique weight matrix solutions of a 2-layer perceptron to classify the Wine dataset for both classification accuracy and write fidelity. Despite device imperfections, we achieve software-equivalent accuracy of up to 95.3 % with proper tuning of network parameters in 15 x 15 MTJ arrays having a range of device sizes. The success of this tuning process shows that new metrics are needed to characterize the performance and quality of networks reproduced in mixed signal hardware. △ Less

Submitted 6 May, 2022; v1 submitted 16 December, 2021; originally announced December 2021.

Comments: 22 pages plus 8 pages supplemental material; 7 figures plus 7 supplemental figures

Journal ref: Physical Review Applied, 18(1) 014039 (2022)

Ultrathin perpendicular free layers for lowering the switching current in STT-MRAM

Authors: Tiffany S. Santos, Goran Mihajlovic, Neil Smith, J. -L. Li, Matthew Carey, Jordan A. Katine, Bruce D. Terris

Abstract: The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thicknes… ▽ More The critical current density $J_{c0}$ required for switching the magnetization of the free layer (FL) in a spin-transfer torque magnetic random access memory (STT-MRAM) cell is proportional to the product of the damping parameter, saturation magnetization and thickness of the free layer, $αM_S t_F$. Conventional FLs have the structure CoFeB/nonmagnetic spacer/CoFeB. By reducing the spacer thickness, W in our case, and also splitting the single W layer into two layers of sub-monolayer thickness, we have reduced $t_F$ while minimizing $α$ and maximizing $M_S$, ultimately leading to lower $J_{c0}$ while maintaining high thermal stability. Bottom-pinned MRAM cells with device diameter in the range of 55-130 nm were fabricated, and $J_{c0}$ is lowest for the thinnest (1.2 nm) FLs, down to 4 MA/cm$^2$ for 65 nm devices, $\sim$30% lower than 1.7 nm FLs. The thermal stability factor $Δ_{\mathrm{dw}}$, as high as 150 for the smallest device size, was determined using a domain wall reversal model from field switching probability measurements. With high $Δ_{\mathrm{dw}}$ and lowest $J_{c0}$, the thinnest FLs have the highest spin-transfer torque efficiency. △ Less

Submitted 4 August, 2020; originally announced August 2020.

Comments: 6 pages, 6 figures

Journal ref: Journal of Applied Physics 128, 113904 (2020)

Thermal stability for domain wall mediated magnetization reversal in perpendicular STT MRAM cells with W insertion layers

Authors: G. Mihajlovic, N. Smith, T. Santos, J. Li, B. D. Terris, J. A. Katine

Abstract: We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor $Δ$ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing W thickness… ▽ More We present an analytical model for calculating energy barrier for the magnetic field-driven domain wall-mediated magnetization reversal of a magneto-resistive random access memory (MRAM) cell and apply it to study thermal stability factor $Δ$ for various thicknesses of W layers inserted into the free layer (FL) as a function of the cell size and temperature. We find that, by increasing W thickness, the effective perpendicular magnetic anisotropy (PMA) energy density of the FL film monotonically increases, but at the same time, $Δ$ of the cell mainly decreases. Our analysis shows that, in addition to saturation magnetization $M_s$ and exchange stiffness constant $A_\mathrm{ex}$ of the FL film, the parameter that quantifies the $Δ$ of the cell is its coercive field $H_c$, rather than the net PMA field $H_k$ of the FL film comprising the cell. △ Less

Submitted 3 August, 2020; v1 submitted 2 August, 2020; originally announced August 2020.

Comments: 8 pages, supplementary material included

Time-domain imaging of curling modes in a confined magnetic vortex and a micromagnetic study exploring the role of spiral spin waves emitted by the core

Authors: D. Osuna Ruiz, P. S. Keatley, J. R. Childress, J. A. Katine, R. J. Hicken, A. P. Hibbins, F. Y. Ogrin

Abstract: The curling spin wave modes of a ferromagnetic vortex confined to a microscale disc have been directly imaged in response to a microwave field excitation using time-resolved scanning Kerr microscopy. Micromagnetic simulations have been used to explore the interaction of gyrotropic vortex core dynamics with the curling modes observed in the region of circulating in-plane magnetization. Hybridizatio… ▽ More The curling spin wave modes of a ferromagnetic vortex confined to a microscale disc have been directly imaged in response to a microwave field excitation using time-resolved scanning Kerr microscopy. Micromagnetic simulations have been used to explore the interaction of gyrotropic vortex core dynamics with the curling modes observed in the region of circulating in-plane magnetization. Hybridization of the fundamental gyrotropic mode with the degenerate, lowest-frequency, azimuthal modes has previously been reported to lead to their splitting and counter propagating motion, as we observe in our spectra and measured images. The curling nature of the modes can be ascribed to asymmetry in the static and dynamic magnetization across the disc thickness, but here we also present evidence that spiral spin waves emitted by the core can influence the spatial character of higher frequency curling modes for which hybridization is only permitted with gyrotropic modes of the same sense of azimuthal motion. While it is challenging to identify if such modes are truly hybridized from the mode dispersion in a confined disc, our simulations reveal that spiral spin waves from the core may act as mediators of the interaction between the core dynamics and azimuthal modes. At higher frequency, modes with radial character only do not exhibit marked curling, but instead show evidence of interaction with spin waves generated at the edge of the disc. The measured spatio-temporal character of the observed curling modes is accurately reproduced by our simulations, which reveal the emission of propagating short-wavelength spiral spin waves from both core and edge regions of the disc. Our simulations suggest that the propagating modes are not inconsequential, but may play a role in the dynamic overlap required for hybridization of modes of the core and in-plane magnetised regions. △ Less

Submitted 16 October, 2020; v1 submitted 4 July, 2020; originally announced July 2020.

Comments: 14 pages, 9 figures

Journal ref: Phys. Rev. B 103, 064408 (2021)

Origin of the resistance-area product dependence of spin transfer torque switching in perpendicular magnetic random access memory cells

Authors: Goran Mihajlovic, Neil Smith, Tiffany Santos, Jui-Lung Li, Michael Tran, Matthew Carey, Bruce D. Terris, Jordan A. Katine

Abstract: We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density… ▽ More We report on an experimental study of current induced switching in perpendicular magnetic random access memory (MRAM) cells with variable resistance-area products (RAs). Our results show that in addition to spin transfer torque (STT), current induced self-heating and voltage controlled magnetic anisotropy also contribute to switching and can explain the RA dependencies of switching current density and STT efficiency. Our findings suggest that thermal optimization of perpendicular MRAM cells can result in significant reduction of switching currents. △ Less

Submitted 7 May, 2019; originally announced May 2019.

Magnetization reversal driven by low dimensional chaos in a nanoscale ferromagnet

Authors: Eric Arturo Montoya, Salvatore Perna, Yu-Jin Chen, Jordan A. Katine, Massimiliano d'Aquino, Claudio Serpico, Ilya N. Krivorotov

Abstract: Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we report the discovery of a new mechanism giving rise to magnetic switching. We exp… ▽ More Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin torque, magneto-electric, and microwave-assisted switching mechanisms. Here we report the discovery of a new mechanism giving rise to magnetic switching. We experimentally show that low-dimensional magnetic chaos induced by alternating spin torque can strongly increase the rate of thermally-activated magnetic switching in a nanoscale ferromagnet. This mechanism exhibits a well-pronounced threshold character in spin torque amplitude and its efficiency increases with decreasing spin torque frequency. We present analytical and numerical calculations that quantitatively explain these experimental findings and reveal the key role played by low-dimensional magnetic chaos near saddle equilibria in enhancement of the switching rate. Our work unveils an important interplay between chaos and stochasticity in the energy assisted switching of magnetic nanosystems and paves the way towards improved energy efficiency of spin torque memory and logic. △ Less

Submitted 8 June, 2018; originally announced June 2018.

Giant resonant nonlinear damping in nanoscale ferromagnets

Authors: I. Barsukov, H. K. Lee, A. A. Jara, Y. -J. Chen, A. M. Gonçalves, C. Sha, J. A. Katine, R. E. Arias, B. A. Ivanov, I. N. Krivorotov

Abstract: Magnetic damping is a key metric for emerging technologies based on magnetic nanoparticles, such as spin torque memory and high-resolution biomagnetic imaging. Despite its importance, understanding of magnetic dissipation in nanoscale ferromagnets remains elusive, and the damping is often treated as a phenomenological constant. Here we report the discovery of a giant frequency-dependent nonlinear… ▽ More Magnetic damping is a key metric for emerging technologies based on magnetic nanoparticles, such as spin torque memory and high-resolution biomagnetic imaging. Despite its importance, understanding of magnetic dissipation in nanoscale ferromagnets remains elusive, and the damping is often treated as a phenomenological constant. Here we report the discovery of a giant frequency-dependent nonlinear damping that strongly alters the response of a nanoscale ferromagnet to spin torque and microwave magnetic field. This novel damping mechanism originates from three-magnon scattering that is strongly enhanced by geometric confinement of magnons in the nanomagnet. We show that the giant nonlinear damping can invert the effect of spin torque on a nanomagnet leading to a surprising current-induced enhancement of damping by an antidamping torque. Our work advances understanding of magnetic dynamics in nanoscale ferromagnets and spin torque devices. △ Less

Submitted 29 March, 2018; originally announced March 2018.

Comments: Main text and supplemental material

Journal ref: Sci. Adv. 5, eaav6943 (2019)

Spintronic nano-scale harvester of broadband microwave energy

Authors: Bin Fang, Mario Carpentieri, Steven Louis, Vasyl Tiberkevich, Andrei Slavin, Ilya N. Krivorotov, Riccardo Tomasello, Anna Giordano, Hongwen Jiang, Jialin Cai, Yaming Fan, Zehong Zhang, Baoshun Zhang, Jordan A. Katine, Kang L. Wang, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng

Abstract: The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.… ▽ More The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics. △ Less

Submitted 30 March, 2018; v1 submitted 1 January, 2018; originally announced January 2018.

Comments: 29 pages,4 main figures

Journal ref: Physical Review APPLIED 11, 014022 (2019)

Activation of Microwave Fields in a Spin-Torque Nano-Oscillator by Neuronal Action Potentials

Authors: J. M. Algarin, B. Ramaswamy, L. Venuti, M. E. Swierzbinski, J. Baker-McKee, I. N. Weinberg, Y. J. Chen, I. N. Krivorotov, J. A. Katine, J. Herberholz, R. C. Araneda, B. Shapiro, E. Waks

Abstract: Action potentials are the basic unit of information in the nervous system and their reliable detection and decoding holds the key to understanding how the brain generates complex thought and behavior. Transducing these signals into microwave field oscillations can enable wireless sensors that report on brain activity through magnetic induction. In the present work we demonstrate that action potent… ▽ More Action potentials are the basic unit of information in the nervous system and their reliable detection and decoding holds the key to understanding how the brain generates complex thought and behavior. Transducing these signals into microwave field oscillations can enable wireless sensors that report on brain activity through magnetic induction. In the present work we demonstrate that action potentials from crayfish lateral giant neuron can trigger microwave oscillations in spin-torque nano-oscillators. These nanoscale devices take as input small currents and convert them to microwave current oscillations that can wirelessly broadcast neuronal activity, opening up the possibility for compact neuro-sensors. We show that action potentials activate microwave oscillations in spin-torque nano-oscillators with an amplitude that follows the action potential signal, demonstrating that the device has both the sensitivity and temporal resolution to respond to action potentials from a single neuron. The activation of magnetic oscillations by action potentials, together with the small footprint and the high frequency tunability, makes these devices promising candidates for high resolution sensing of bioelectric signals from neural tissues. These device attributes may be useful for design of high-throughput bi-directional brain-machine interfaces. △ Less

Submitted 16 October, 2017; originally announced October 2017.

A platform for time-resolved scanning Kerr microscopy in the near-field

Authors: Paul S. Keatley, Thomas H. J. Loughran, Euan Hendry, William L. Barnes, Robert J. Hicken, Jeffrey R. Childress, Jordan A. Katine

Abstract: Time-resolved scanning Kerr microscopy (TRSKM) is a powerful technique for the investigation of picosecond magnetization dynamics at sub-micron length scales by means of the magneto-optical Kerr effect (MOKE). The spatial resolution of conventional (focused) Kerr microscopy using a microscope objective lens is determined by the optical diffraction limit so that the nanoscale character of the magne… ▽ More Time-resolved scanning Kerr microscopy (TRSKM) is a powerful technique for the investigation of picosecond magnetization dynamics at sub-micron length scales by means of the magneto-optical Kerr effect (MOKE). The spatial resolution of conventional (focused) Kerr microscopy using a microscope objective lens is determined by the optical diffraction limit so that the nanoscale character of the magnetization dynamics is lost. Here we present a platform to overcome this limitation by means of a near-field TRSKM that incorporates an atomic force microscope (AFM) with optical access to a metallic AFM probe with a nanoscale aperture at its tip. We demonstrate the near-field capability of the instrument through the comparison of time-resolved polar Kerr images of magnetization dynamics within a microscale NiFe rectangle acquired using both near-field and focused TRSKM techniques at a wavelength of 800 nm. The flux-closure domain state of the in-plane equilibrium magnetization provided the maximum possible dynamic polar Kerr contrast across the central domain wall, and enabled an assessment of the magneto-optical spatial resolution of each technique. Line profiles extracted from the Kerr images demonstrate that the near-field spatial resolution was enhanced with respect to that of the focused Kerr images. Furthermore, the near-field polar Kerr signal (~1 mdeg) was more than half that of the focused Kerr signal, despite the potential loss of probe light due to internal reflections within the AFM tip. We have confirmed the near-field operation by exploring the influence of the tip-sample separation, and have determined the spatial resolution to be ~550 nm for an aperture with a sub-wavelength diameter of 400 nm. The spatial resolution of the near-field TRSKM was in good agreement with finite element modelling of the aperture... △ Less

Submitted 28 July, 2017; originally announced July 2017.

Comments: Abstract cut due to character limit, see PDF for full abstract

Frequency shift keying by current modulation in a MTJ-based STNO with high data rate

Authors: A. Ruiz-Calaforra, A. Purbawati, T. Brächer, J. Hem, C. Murapaka, E. Jiménez, D. Mauri, A. Zeltser, J. A. Katine, M. -C. Cyrille, L. D. Buda-Prejbeanu, U. Ebels

Abstract: Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the abilit… ▽ More Spin torque nano-oscillators are nanoscopic microwave frequency generators which excel due to their large frequency tuning range and agility for amplitude and frequency modulation. Due to their compactness, they are regarded as suitable candidates for applications in wireless communications, where cost-effective and CMOS-compatible standalone devices are required. In this work, we study the ability of a magnetic-tunnel-junction (MTJ) based spin torque nano-oscillator to respond to a binary input sequence encoded in a square-shaped current pulse for its application as a frequency-shift-keying (FSK) based emitter. We demonstrate that below the limit imposed by the spin torque nano-oscillators intrinsic relaxation frequency, an agile variation between discrete oscillator states is possible. For this kind of devices, we demonstrate FSK up to data rates of 400 Mbps which is well suited for the application of such scillators in wireless networks. △ Less

Submitted 14 July, 2017; originally announced July 2017.

Injection locking at 2f of spin torque oscillators under influence of thermal noise

Authors: M. Tortarolo, B. Lacoste, J. Hem, C. Dieudonné, M. -C. Cyrille, J. A. Katine, D. Mauri, A. Zeltser, L. D. Buda-Prejbeanu, U. Ebels

Abstract: Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is po… ▽ More Experiments, numerical simulations and an analytic model were developed to elucidate the effects of noise in the synchronized state of a tunnel junction based spin torque nano oscillator (STNO). It is demonstrated that in the in plane magnetized structure, while the frequency is locked, much higher reference currents are needed to reduce the noise by phase locking. Our analysis shows that it is possible to control the phase noise by the reference microwave current (IRF) and that it can be further reduced by increasing the bias current (IDC) of the oscillator, keeping the reference current in feasible limits for applications. △ Less

Submitted 19 June, 2017; originally announced June 2017.

Parametric resonance of magnetization excited by electric field

Authors: Yu-Jin Chen, Han Kyu Lee, Roman Verba, Jordan A. Katine, Igor Barsukov, Vasil Tiberkevich, John Q. Xiao, Andrei N. Slavin, Ilya N. Krivorotov

Abstract: Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promising candidates for low-power information processing but a method for energy-efficient excitation of short-wavelength spin waves has been lacking. Here we show that spin waves in nanoscale magnetic tunnel junctions can be g… ▽ More Manipulation of magnetization by electric field is a central goal of spintronics because it enables energy-efficient operation of spin-based devices. Spin wave devices are promising candidates for low-power information processing but a method for energy-efficient excitation of short-wavelength spin waves has been lacking. Here we show that spin waves in nanoscale magnetic tunnel junctions can be generated via parametric resonance induced by electric field. Parametric excitation of magnetization is a versatile method of short-wavelength spin wave generation, and thus our results pave the way towards energy-efficient nanomagnonic devices. △ Less

Submitted 12 November, 2016; originally announced November 2016.

Journal ref: Nano Lett., 17 (1), 572 (2017)

Current-induced Pinwheel Oscillations in Perpendicular Magnetic Anisotropy Spin Valve Nanopillars

Authors: Richard Choi, J. A. Katine, Stephane Mangin, Eric E. Fullerton

Abstract: Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd… ▽ More Nanopillar spin valve devices are typically comprised of two ferromagnetic layers: a reference layer and a free layer whose magnetic orientation can be changed by both an external magnetic field and through the introduction of spin-polarized electric current. Here we report the continuous repeated switching behavior of both the reference and free layers of a perpendicular spin valve made of Co/Pd and Co/Ni multilayers that arises for sufficiently large DC currents. This periodic switching of the two layers produces an oscillating signal in the MHz regime but is only observed for one sign of the applied current. The observed behavior agrees well with micromagnetic simulations. △ Less

Submitted 11 April, 2016; originally announced April 2016.

Cotunneling drag effect in Coulomb-coupled quantum dots

Authors: A. J. Keller, J. S. Lim, David Sánchez, Rosa López, S. Amasha, J. A. Katine, Hadas Shtrikman, D. Goldhaber-Gordon

Abstract: In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot (CC-DQD) and, through both expe… ▽ More In Coulomb drag, a current flowing in one conductor can induce a voltage across an adjacent conductor via the Coulomb interaction. The mechanisms yielding drag effects are not always understood, even though drag effects are sufficiently general to be seen in many low-dimensional systems. In this Letter, we observe Coulomb drag in a Coulomb-coupled double quantum dot (CC-DQD) and, through both experimental and theoretical arguments, identify cotunneling as essential to obtaining a correct qualitative understanding of the drag behavior. △ Less

Submitted 14 August, 2016; v1 submitted 2 March, 2016; originally announced March 2016.

Comments: Main text: 5 pages, 5 figures; SM: 11 pages, 5 figures, 1 table

Journal ref: Phys. Rev. Lett. 117, 066602 (2016)

Magnetic phase transitions in Ta/CoFeB/MgO multilayers

Authors: I. Barsukov, Yu Fu, C. Safranski, Y. -J. Chen, B. Youngblood, A. M. Gonçalves, M. Spasova, M. Farle, J. A. Katine, C. C. Kuo, I. N. Krivorotov

Abstract: We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co$_{20}$Fe$_{60}$B$_{20}$/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low tem… ▽ More We study thin films and magnetic tunnel junction nanopillars based on Ta/Co$_{20}$Fe$_{60}$B$_{20}$/MgO multilayers by electrical transport and magnetometry measurements. These measurements suggest that an ultrathin magnetic oxide layer forms at the Co$_{20}$Fe$_{60}$B$_{20}$/MgO interface. At approximately 160 K, the oxide undergoes a phase transition from an insulating antiferromagnet at low temperatures to a conductive weak ferromagnet at high temperatures. This interfacial magnetic oxide is expected to have significant impact on the magnetic properties of CoFeB-based multilayers used in spin torque memories. △ Less

Submitted 25 April, 2015; originally announced April 2015.

Journal ref: Appl. Phys. Lett. 106, 192407 (2015)

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Authors: Bin Fang, Mario Carpentieri, Xiaojie Hao, Hongwen Jiang, Jordan A. Katine, Ilya N. Krivorotov, Berthold Ocker, Juergen Langer, Kang L. Wang, Baoshun Zhang, Bruno Azzerboni, Pedram Khalili Amiri, Giovanni Finocchio, Zhongming Zeng

Abstract: Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record… ▽ More Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks. △ Less

Submitted 18 October, 2014; originally announced October 2014.

Comments: 27 pages, 7 figures

Journal ref: Nat. Comm. 7, 11259, (2016)

Spin-transfer assisted thermally activated switching distributions in perpendicularly magnetized spin valve nanopillars

Authors: D. B. Gopman, D. Bedau, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

Abstract: We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dep… ▽ More We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve nanopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally-induced switching model breaks down for currents exceeding the critical threshold. △ Less

Submitted 6 December, 2013; originally announced December 2013.

Comments: 7 pages, 6 figures. Under review at Physical Review B

Journal ref: Phys. Rev. B 89, 134427 (2014)

Temperature dependent nucleation and propagation of domain walls in a sub-100 nm perpendicularly magnetized Co/Ni multilayer

Authors: D. B. Gopman, D. Bedau, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

Abstract: We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization con… ▽ More We present a study of the temperature dependence of the switching fields in Co/Ni-based perpendicularly magnetized spin-valves. While magnetization reversal of all-perpendicular Co/Ni spin valves at ambient temperatures is typically marked by a single sharp step change in resistance, low temperature measurements can reveal a series of resistance steps, consistent with non-uniform magnetization configurations. We propose a model that consists of domain nucleation, propagation and annihilation to explain the temperature dependence of the switching fields. Interestingly, low temperature (<30 K) step changes in resistance that we associate with domain nucleation, have a bimodal switching field and resistance step distribution, attributable to two competing nucleation pathways. △ Less

Submitted 1 November, 2013; originally announced November 2013.

Comments: 5 pages, 4 figures

Journal ref: J. Appl. Phys. 115, 113910 (2014)

Spin torque ferromagnetic resonance with magnetic field modulation

Authors: A. M. Gonçalves, I. Barsukov, Y. -J. Chen, L. Yang, J. A. Katine, I. N. Krivorotov

Abstract: We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity over the conventional ST-FMR measurements, and application of this technique to nanoscale magnetic tunnel junctions (MTJs) reveals a rich spectrum of standing sp… ▽ More We demonstrate a technique of broadband spin torque ferromagnetic resonance (ST-FMR) with magnetic field modulation for measurements of spin wave properties in magnetic nanostructures. This technique gives great improvement in sensitivity over the conventional ST-FMR measurements, and application of this technique to nanoscale magnetic tunnel junctions (MTJs) reveals a rich spectrum of standing spin wave eigenmodes. Comparison of the ST-FMR measurements with micromagnetic simulations of the spin wave spectrum allows us to explain the character of low-frequency magnetic excitations in nanoscale MTJs. △ Less

Submitted 29 October, 2013; originally announced October 2013.

Comments: Also see: http://faculty.sites.uci.edu/krivorotovgroup/

Journal ref: Appl. Phys. Lett. 103, 172406 (2013)

Bimodal switching field distributions in all-perpendicular spin-valve nanopillars

Authors: Daniel B. Gopman, Daniel Bedau, Stéphane Mangin, Eric E. Fullerton, Jordan A. Katine, Andrew D. Kent

Abstract: Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to… ▽ More Switching field measurements of the free layer element of 75 nm diameter spin-valve nanopillars reveal a bimodal distribution of switching fields at low temperatures (below 100 K). This result is inconsistent with a model of thermal activation over a single perpendicular anisotropy barrier. The correlation between antiparallel to parallel and parallel to antiparallel switching fields increases to nearly 50% at low temperatures. This reflects random fluctuation of the shift of the free layer hysteresis loop between two different magnitudes, which may originate from changes in the dipole field from the polarizing layer. The magnitude of the loop shift changes by 25% and is correlated to transitions of the spin-valve into an antiparallel configuration. △ Less

Submitted 17 September, 2013; originally announced September 2013.

Comments: 3 pages, 4 figures. Submitted to JAP for 58th MMM Proceedings

Journal ref: Journal of Applied Physics 115, 17C707 (2014)

Temperature dependence of the switching field distributions in all-perpendicular spin-valve nanopillars

Authors: D. B. Gopman, D. Bedau, G. Wolf, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

Abstract: We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and… ▽ More We present temperature dependent switching measurements of the Co/Ni multilayered free element of 75 nm diameter spin-valve nanopillars. Angular dependent hysteresis measurements as well as switching field measurements taken at low temperature are in agreement with a model of thermal activation over a perpendicular anisotropy barrier. However, the statistics of switching (mean switching field and switching variance) from 20 K up to 400 K are in disagreement with a Néel-Brown model that assumes a temperature independent barrier height and anisotropy field. We introduce a modified Néel-Brown model thats fit the experimental data in which we take a $T^{3/2}$ dependence to the barrier height and the anisotropy field due to the temperature dependent magnetization and anisotropy energy. △ Less

Submitted 9 July, 2013; originally announced July 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. B 88, 100401(R) (2013)

Observation of the SU(4) Kondo state in a double quantum dot

Authors: A. J. Keller, S. Amasha, I. Weymann, C. P. Moca, I. G. Rau, J. A. Katine, Hadas Shtrikman, G. Zaránd, D. Goldhaber-Gordon

Abstract: Central to condensed matter physics are quantum impurity models, which describe how a local degree of freedom interacts with a continuum. Surprisingly, these models are often universal in that they can quantitatively describe many outwardly unrelated physical systems. Here we develop a double quantum dot-based experimental realization of the SU(4) Kondo model, which describes the maximally symmetr… ▽ More Central to condensed matter physics are quantum impurity models, which describe how a local degree of freedom interacts with a continuum. Surprisingly, these models are often universal in that they can quantitatively describe many outwardly unrelated physical systems. Here we develop a double quantum dot-based experimental realization of the SU(4) Kondo model, which describes the maximally symmetric screening of a local four-fold degeneracy. As demonstrated through transport measurements and detailed numerical renormalization group calculations, our device affords exquisite control over orbital and spin physics. Because the two quantum dots are coupled only capacitively, we can achieve orbital state- or "pseudospin"-resolved bias spectroscopy, providing intimate access to the interplay of spin and orbital Kondo effects. This cannot be achieved in the few other systems realizing the SU(4) Kondo state. △ Less

Submitted 26 June, 2013; originally announced June 2013.

Comments: Text and supplementary information. Text: 17 pages, 4 figures. Supplementary information: 24 pages, 9 figures

Journal ref: Nature Phys. 10 (2014) 145-150

Magnetization reversal in sub-100nm magnetic tunnel junctions with ultrathin MgO barrier biased along hard axis

Authors: J. P. Cascales, D. Herranz, J. L. Sambricio, U. Ebels, J. A. Katine, F. G. Aliev

Abstract: We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the cr… ▽ More We report on room temperature magnetoresistance and low frequency noise in sub-100nm elliptic CoFeB/MgO/CoFeB magnetic tunnel junctions with ultrathin (0.9nm) barriers. For magnetic fields applied along the hard axis, we observe current induced magnetization switching between the antiparallel and parallel alignments at DC current densities as low as 4*106A/cm2. We attribute the low value of the critical current to the influence of localized reductions in the tunnel barrier, which affects the current distribution. The analysis of random telegraph noise, which appears in the field interval near a magnetization switch, provides an estimate to the dimension of the pseudo pinholes that trigger the magnetization switching via local spin torque. Micromagnetic simulations qualitatively and quantitatively reproduce the main experimental observations. △ Less

Submitted 27 May, 2013; originally announced May 2013.

Journal ref: Appl. Phys. Lett. 102, 092404 (2013)

Ultralow-current-density and bias-field-free spin-transfer nano-oscillator

Authors: Zhongming Zeng, Giovanni Finocchio, Baoshun Zhang, Pedram Khalili Amiri, Jordan A. Katine, Ilya N. Krivorotov, Yiming Huai, Juergen Langer, Bruno Azzerboni, Kang L. Wang, Hongwen Jiang

Abstract: The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size… ▽ More The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators. △ Less

Submitted 22 March, 2013; originally announced March 2013.

Comments: 18 pages, 4 figures

Journal ref: Scientific Reports, 3, 1426 (2013)

Time Domain Mapping of Spin Torque Oscillator Effective Energy

Authors: Graham E. Rowlands, Jordan A. Katine, Juergen Langer, Jian Zhu, Ilya N. Krivorotov

Abstract: Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach p… ▽ More Stochastic dynamics of spin torque oscillators (STOs) can be described in terms of magnetization drift and diffusion over a current-dependent effective energy surface given by the Fokker-Planck equation. Here we present a method that directly probes this effective energy surface via time-resolved measurements of the microwave voltage generated by a STO. We show that the effective energy approach provides a simple recipe for predicting spectral line widths and line shapes near the generation threshold. Our time domain technique also accurately measures the field-like component of spin torque in a wide range of the voltage bias values. △ Less

Submitted 18 February, 2013; originally announced February 2013.

Comments: 5 pages, 3 figures. Supplement included: 7 pages, 6 figures

Pseudospin-Resolved Transport Spectroscopy of the Kondo Effect in a Double Quantum Dot

Authors: S. Amasha, A. J. Keller, I. G. Rau, A. Carmi, J. A. Katine, H. Shtrikman, Y. Oreg, D. Goldhaber-Gordon

Abstract: We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo re… ▽ More We report measurements of the Kondo effect in a double quantum dot (DQD), where the orbital states act as pseudospin states whose degeneracy contributes to Kondo screening. Standard transport spectroscopy as a function of the bias voltage on both dots shows a zero-bias peak in conductance, analogous to that observed for spin Kondo in single dots. Breaking the orbital degeneracy splits the Kondo resonance in the tunneling density of states above and below the Fermi energy of the leads, with the resonances having different pseudospin character. Using pseudospin-resolved spectroscopy, we demonstrate the pseudospin character by observing a Kondo peak at only one sign of the bias voltage. We show that even when the pseudospin states have very different tunnel rates to the leads, a Kondo temperature can be consistently defined for the DQD system. △ Less

Submitted 2 July, 2012; originally announced July 2012.

Comments: Text and supplementary information. Text: 4 pages, 5 figures. Supplementary information: 4 pages, 4 figures

Time-Resolved Magnetic Relaxation of a Nanomagnet on Subnanosecond Time Scales

Authors: H. Liu, D. Bedau, J. Z. Sun, S. Mangin, E. E. Fullerton, J. A. Katine, A. D. Kent

Abstract: We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching p… ▽ More We present a two-current-pulse temporal correlation experiment to study the intrinsic subnanosecond nonequilibrium magnetic dynamics of a nanomagnet during and following a pulse excitation. This method is applied to a model spin-transfer system, a spin valve nanopillar with perpendicular magnetic anisotropy. Two-pulses separated by a short delay (< 500 ps) are shown to lead to the same switching probability as a single pulse with a duration that depends on the delay. This demonstrates a remarkable symmetry between magnetic excitation and relaxation and provides a direct measurement of the magnetic relaxation time. The results are consistent with a simple finite temperature Fokker-Planck macrospin model of the dynamics, suggesting more coherent magnetization dynamics in this short time nonequilibrium limit than near equilibrium. △ Less

Submitted 31 May, 2012; originally announced May 2012.

Journal ref: Physical Review B 85, 220405(R) (2012)

Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions

Authors: Jian Zhu, J. A. Katine, Graham E. Rowlands, Yu-Jin Chen, Zheng Duan, Juan G. Alzate, Pramey Upadhyaya, Juergen Langer, Pedram Khalili Amiri, Kang L. Wang, Ilya N. Krivorotov

Abstract: We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency… ▽ More We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes. △ Less

Submitted 15 May, 2012; v1 submitted 13 May, 2012; originally announced May 2012.

Comments: 5 pages; supplementary material added

Journal ref: Phys. Rev. Lett. 108, 197203 (2012)

Network analyzer measurements of spin transfer torques in magnetic tunnel junctions

Authors: Lin Xue, Chen Wang, Yong-Tao Cui, J. A. Katine, R. A. Buhrman, D. C. Ralph

Abstract: We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the ferromagnetic resonance frequency of the tunnel junction's free layer. This produces an oscillating resistance that, together with an applied direct current, generates a mi… ▽ More We demonstrate a simple network-analyzer technique to make quantitative measurements of the bias dependence of spin torque in a magnetic tunnel junction. We apply a microwave current to exert an oscillating spin torque near the ferromagnetic resonance frequency of the tunnel junction's free layer. This produces an oscillating resistance that, together with an applied direct current, generates a microwave signal that we measure with the network analyzer. An analysis of the resonant response yields the strength and direction of the spin torque at non-zero bias. We compare to measurements of the spin torque vector by time-domain spin-torque ferromagnetic resonance. △ Less

Submitted 24 July, 2012; v1 submitted 30 March, 2012; originally announced April 2012.

Comments: 13 pages, 3 figures

Journal ref: Applied Physics Letters 101, 022417 (2012)

Temperature dependence of the emission linewidth in MgO-based spin torque nano-oscillators

Authors: J. F. Sierra, M. Quinsat, U. Ebels, D. Gusakova, I. Joumard, A. S. Jenkins, L. Buda-Prejbeanu, B. Dieny, M. C. Cyrille, A. Zeltser, J. A. Katine

Abstract: Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experi… ▽ More Spin transfer driven excitations in magnetic nanostructures are characterized by a relatively large microwave emission linewidth (10 -100 MHz). Here we investigate the role of thermal fluctuations as well as of the non-linear amplitude-phase coupling parameter and the amplitude relaxation rate to explain the linewidth broadening of in-plane precession modes induced in planar nanostructures. Experiments on the linewidth broadening performed on MgO based magnetic tunnel junctions are compared to the linewidth obtained from macrospin simulations and from evaluation of the phase variance. In all cases we find that the linewidth varies linearly with temperature when the amplitude relaxation rate is of the same order as the linewidth and when the amplitude-phase coupling parameter is relatively small. The small amplitude-phase coupling parameter means that the linewidth is dominated by direct phase fluctuations and not by amplitude fluctuations, explaining thus its linear dependence as a function of temperature. △ Less

Submitted 13 December, 2011; originally announced December 2011.

Journal ref: Applied Physics Letters, 101 , 062407 (2012)

Asymmetric switching behavior in perpendicularly magnetized spin-valve nanopillars due to the polarizer dipole field

Authors: Daniel B. Gopman, Daniel Bedau, Stephane Mangin, C. H. Lambert, Eric E. Fullerton, Jordan A. Katine, Andrew D. Kent

Abstract: We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field… ▽ More We report the free layer switching field distributions of spin-valve nanopillars with perpendicular magnetization. While the distributions are consistent with a thermal activation model, they show a strong asymmetry between the parallel to antiparallel and the reverse transition, with energy barriers more than 50% higher for the parallel to antiparallel transitions. The inhomogeneous dipolar field from the polarizer is demonstrated to be at the origin of this symmetry breaking. Interestingly, the symmetry is restored for devices with a lithographically defined notch pair removed from the midpoint of the pillar cross-section along the ellipse long axis. These results have important implications for the thermal stability of perpendicular magnetized MRAM bit cells. △ Less

Submitted 5 November, 2011; originally announced November 2011.

Comments: Submitted to Applied Physics Letters on November 4, 2011. Consists of 4 pages, 3 figures

Journal ref: Applied Physics Letters 100, 062404 (2012)

Time-resolved detection of spin-transfer-driven ferromagnetic resonance and spin torque measurement in magnetic tunnel junctions

Authors: Chen Wang, Yong-Tao Cui, Jordan A. Katine, Robert A. Buhrman, Daniel C. Ralph

Abstract: Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the… ▽ More Several experimental techniques have been introduced in recent years in attempts to measure spin transfer torque in magnetic tunnel junctions (MTJs). The dependence of spin torque on bias is important for understanding fundamental spin physics in magnetic devices and for applications. However, previous techniques have provided only indirect measures of the torque and their results to date for the bias dependence are qualitatively and quantitatively inconsistent. Here we demonstrate that spin torque in MTJs can be measured directly by using time-domain techniques to detect resonant magnetic precession in response to an oscillating spin torque. The technique is accurate in the high-bias regime relevant for applications, and because it detects directly small-angle linear-response magnetic dynamics caused by spin torque it is relatively immune to artifacts affecting competing techniques. At high bias we find that the spin torque vector differs markedly from the simple lowest-order Taylor series approximations commonly assumed. △ Less

Submitted 8 October, 2010; originally announced October 2010.

Comments: 29 pages, 5 figures including supplementary material

Journal ref: Nature Physics 7, 496 (2011)

Spin-transfer pulse switching: From the dynamic to the thermally activated regime

Authors: D. Bedau, H. Liu, J. Z. Sun, J. A. Katine, E. E. Fullerton, S. Mangin, A. D. Kent

Abstract: The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration… ▽ More The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short time large pulse amplitude regime, in which the switching probability is determined by the spin angular momentum in the current pulse. △ Less

Submitted 27 September, 2010; originally announced September 2010.

Comments: 4 page, 3 figures

Journal ref: Applied Physics Letters 97, 262502 (2010)

Rapid Domain Wall Motion in Permalloy Nanowires Excited by Spin-Polarized Current Applied Perpendicular to the Nanowire

Authors: C. T. Boone, J. A. Katine, M. Carey, J. R. Childress, X. Cheng, I. N. Krivorotov

Abstract: We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10$^7$ A/cm$^2$. We study domain wall (DW) dynamics in permalloy nanowires excited by alternating spin-polarized current applied perpendicular to the nanowire. Spin torque ferromagnetic resonance measurements reveal that DW oscillations at a pinning site in the nanowire can be excited with velocities as high as 800 m/s at current densities below 10$^7$ A/cm$^2$. △ Less

Submitted 3 March, 2010; v1 submitted 9 September, 2009; originally announced September 2009.

Journal ref: Phys. Rev. Lett. 104, 097203 (2010)

Single-shot time-domain studies of spin-torque-driven switching in magnetic tunnel junctions

Authors: Y. -T. Cui, G. Finocchio, C. Wang, J. A. Katine, R. A. Buhrman, D. C. Ralph

Abstract: We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching, including the variations between individual switching events. Analyses of pre-switching thermal fluctuations allow detailed measurements of coherence times and va… ▽ More We report single-shot measurements of resistance versus time for thermally assisted spin-torque-driven switching in magnetic tunnel junctions. We achieve sufficient sensitivity to resolve the resistance signals leading up to switching, including the variations between individual switching events. Analyses of pre-switching thermal fluctuations allow detailed measurements of coherence times and variations in magnetization precession amplitude. We find that with a small in-plane hard-axis magnetic field the magnetization dynamics are more spatially coherent than for the case of zero field. △ Less

Submitted 13 June, 2009; originally announced June 2009.

Comments: 13 pages, 4 figures

Sensitivity of spin-torque diodes for frequency-tunable resonant microwave detection

Authors: C. Wang, Y. -T. Cui, J. Z. Sun, J. A. Katine, R. A. Buhrman, D. C. Ralph

Abstract: We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended (unpatterned) magnetic pinned layer. However, the measured sensitivities are reduced below our e… ▽ More We calculate the efficiency with which magnetic tunnel junctions can be used as resonant detectors of incident microwave radiation via the spin-torque diode effect. The expression we derive is in good agreement with the sensitivities we measure for MgO-based magnetic tunnel junctions with an extended (unpatterned) magnetic pinned layer. However, the measured sensitivities are reduced below our estimate for a second set of devices in which the pinned layer is a patterned synthetic antiferromagnet (SAF). We suggest that this reduction may be due to an undesirable coupling between the magnetic free layer and one of the magnetic layers within the etched SAF. Our calculations suggest that optimized tunnel junctions should achieve sensitivities for resonant detection exceeding 10,000 mV/mW. △ Less

Submitted 12 May, 2009; originally announced May 2009.

Comments: 17 pages, 2 figures

Distortion of the Stoner-Wohlfarth astroid by a spin-polarized current

Authors: Y. Henry, S. Mangin, J. Cucchiara, J. A. Katine, E. E. Fullerton

Abstract: The Stoner-Wohlfarth astroid is a fundamental object in magnetism. It separates regions of the magnetic field space with two stable magnetization equilibria from those with only one stable equilibrium and it characterizes the magnetization reversal of nano-magnets induced by applied magnetic fields. On the other hand, it was recently demonstrated that transfer of spin angular momentum from a spi… ▽ More The Stoner-Wohlfarth astroid is a fundamental object in magnetism. It separates regions of the magnetic field space with two stable magnetization equilibria from those with only one stable equilibrium and it characterizes the magnetization reversal of nano-magnets induced by applied magnetic fields. On the other hand, it was recently demonstrated that transfer of spin angular momentum from a spin-polarized current provides an alternative way of switching the magnetization. Here, we examine the astroid of a nano-magnet with uniaxial magnetic anisotropy under the combined influence of applied fields and spin-transfer torques. We find that spin-transfer is most efficient at modifying the astroid when the external field is applied along the easy-axis of magnetization. On departing from this situation, a threshold current appears below which spin-transfer becomes ineffective yielding a current-induced dip in the astroid along the easy-axis direction. An extension of the Stoner-Wohlfarth model is outlined which accounts for this phenomenon. △ Less

Submitted 16 February, 2009; v1 submitted 13 February, 2009; originally announced February 2009.

Comments: 8 pages, 6 figures

Journal ref: Phys. Rev. B 79 (2009) 214422

Experimental Test of Analytic Theory of Spin Torque Oscillator Dynamics

Authors: C. Boone, J. A. Katine, J. R. Childress, J. Zhu, X. Cheng, I. N. Krivorotov

Abstract: We make measurements of power spectral density of the microwave voltage emitted by a spin torque nano-oscillator (STNO) and compare our experimental results to predictions of an analytic theory of a single-mode STNO dynamics by V. S. Tiberkevich, A. N. Slavin, J. V. Kim,[Phys. Rev. B 78, 092401 (2008)]. We find that a complete set of the oscillator spectral properties: power, frequency, spectral… ▽ More We make measurements of power spectral density of the microwave voltage emitted by a spin torque nano-oscillator (STNO) and compare our experimental results to predictions of an analytic theory of a single-mode STNO dynamics by V. S. Tiberkevich, A. N. Slavin, J. V. Kim,[Phys. Rev. B 78, 092401 (2008)]. We find that a complete set of the oscillator spectral properties: power, frequency, spectral line width and line shape as functions of current are self-consistently described by the analytic theory for moderate amplitudes of oscillations (< 70 degrees). △ Less

Submitted 2 December, 2008; v1 submitted 2 December, 2008; originally announced December 2008.

Bias and angular dependence of spin-transfer torque in magnetic tunnel junctions

Authors: C. Wang, Y. -T. Cui, J. Z. Sun, J. A. Katine, R. A. Buhrman, D. C. Ralph

Abstract: We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a function of bias, V. We explain the conflicting conclusions of two previous experiments by accounting for additional terms that contribute to the ST-FMR signal at… ▽ More We use spin-transfer-driven ferromagnetic resonance (ST-FMR) to measure the spin-transfer torque vector T in MgO-based magnetic tunnel junctions as a function of the offset angle between the magnetic moments of the electrodes and as a function of bias, V. We explain the conflicting conclusions of two previous experiments by accounting for additional terms that contribute to the ST-FMR signal at large |V|. Including the additional terms gives us improved precision in the determination of T(V), allowing us to distinguish among competing predictions. We determine that the in-plane component of has a weak but non-zero dependence on bias, varying by 30-35% over the bias range where the measurements are accurate, and that the perpendicular component can be large enough to be technologically significant. We also make comparisons to other experimental techniques that have been used to try to measure T(V). △ Less

Submitted 12 May, 2009; v1 submitted 27 August, 2008; originally announced August 2008.

Comments: 30 pages, 8 figures. Expanded with additional data and discussion. In press at PRB

Scaling Properties of Critical Phase Change Conditions in Ge2Sb2Te5 Nanopillars

Authors: O. Ozatay, B. Stipe, J. A. Katine, B. D. Terris

Abstract: We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase co… ▽ More We have measured the critical phase change conditions induced by electrical pulses in Ge2Sb2Te5 nanopillar phase change memory devices by constructing a comprehensive resistance map as a function of pulse parameters (width, amplitude and trailing edge). Our measurements reveal that the cooling scheme and the details of the contact geometry play the dominant role in determining the final phase composition of the device. A three-dimensional finite element model of the electro-thermal physics not only provides good insights into the underlying physical mechanisms of the switching dynamics but also quantitatively accounts for the observed scaling behaviour. △ Less

Submitted 28 April, 2008; originally announced April 2008.

Comments: 12 pages, 4 figures

Effects of rf Current on Spin Transfer Torque Induced Dynamics

Authors: S. H. Florez, J. A. Katine, M. Carey, L. Folks, O. Ozatay, B. D. Terris

Abstract: The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven ma… ▽ More The impact of radiofrequency (rf) currents on the direct current (dc) driven switching dynamics in current-perpendicular-to-plane nanoscale spin valves is demonstrated. The rf currents dramatically alter the dc driven free layer magnetization reversal dynamics as well as the dc switching level. This occurs when the frequency of the rf current is tuned to a frequency range around the dc driven magnetization precession frequencies. For these frequencies, interactions between the dc driven precession and the injected rf induce frequency locking and frequency pulling effects that lead to a measurable dependence of the critical switching current on the frequency of the injected rf. Based on macrospin simulations, including dc as well as rf spin torque currents, we explain the origin of the observed effects. △ Less

Submitted 14 April, 2008; v1 submitted 26 March, 2008; originally announced March 2008.

Comments: 5 pages, 4 figures

Time-resolved investigation of magnetization dynamics of arrays of non-ellipsoidal nanomagnets with a non-uniform ground state

Authors: P. S. Keatley, V. V. Kruglyak, A. Neudert, E. A. Galaktionov, R. J. Hicken, J. R. Childress, J. A. Katine

Abstract: We have performed time-resolved scanning Kerr microscopy (TRSKM) measurements upon arrays of square ferromagnetic nano-elements of different size and for a range of bias fields. The experimental results were compared to micromagnetic simulations of model arrays in order to understand the non-uniform precessional dynamics within the elements. In the experimental spectra two branches of excited mo… ▽ More We have performed time-resolved scanning Kerr microscopy (TRSKM) measurements upon arrays of square ferromagnetic nano-elements of different size and for a range of bias fields. The experimental results were compared to micromagnetic simulations of model arrays in order to understand the non-uniform precessional dynamics within the elements. In the experimental spectra two branches of excited modes were observed to co-exist above a particular bias field. Below the so-called crossover field, the higher frequency branch was observed to vanish. Micromagnetic simulations and Fourier imaging revealed that modes from the higher frequency branch had large amplitude at the center of the element where the effective field was parallel to the bias field and the static magnetization. Modes from the lower frequency branch had large amplitude near the edges of the element perpendicular to the bias field. The simulations revealed significant canting of the static magnetization and the effective field away from the direction of the bias field in the edge regions. For the smallest element sizes and/or at low bias field values the effective field was found to become anti-parallel to the static magnetization. The simulations revealed that the majority of the modes were de-localized with finite amplitude throughout the element, while the spatial character of a mode was found to be correlated with the spatial variation of the total effective field and the static magnetization state. The simulations also revealed that the frequencies of the edge modes are strongly affected by the spatial distribution of the static magnetization state both within an element and within its nearest neighbors. △ Less

Submitted 25 October, 2007; originally announced October 2007.

Distribution of the magnetization reversal duration in sub-ns spin-transfer switching

Authors: T. Devolder, C. Chappert, J. A. Katine, M. J. Carey, K. Ito

Abstract: We study the distribution of switching times in spin-transfer switching induced by sub-ns current pulses in pillar-shaped spin-valves. The pulse durations leading to switching follow a comb-like distribution, multiply-peaked at a few most probable, regularly spaced switching durations. These durations reflect the precessional nature of the switching, which occurs through a fluctuating integer nu… ▽ More We study the distribution of switching times in spin-transfer switching induced by sub-ns current pulses in pillar-shaped spin-valves. The pulse durations leading to switching follow a comb-like distribution, multiply-peaked at a few most probable, regularly spaced switching durations. These durations reflect the precessional nature of the switching, which occurs through a fluctuating integer number of precession cycles. This can be modeled considering the thermal variance of the initial magnetization orientations and the occurrence of vanishing total torque in the possible magnetization trajectories. Biasing the spin-valve with a hard axis field prevents some of these occurrences, and can provide an almost perfect reproducibility of the switching duration. △ Less

Submitted 27 September, 2006; originally announced September 2006.

Comments: submitted to PRB

Current-driven microwave oscillations in current perpendicular-to-plane spin-valve nanopillars

Authors: Q. Mistral, Joo-Von Kim, T. Devolder, P. Crozat, C. Chappert, J. A. Katine, M. J. Carey, K. Ito

Abstract: We study the current and temperature dependences of the microwave voltage emission of spin-valve nanopillars subjected to an in-plane magnetic field and a perpendicular-to-plane current. Despite the complex multilayer geometry, clear microwave emission is shown to be possible and spectral lines as narrow as 3.8 MHz (at 150 K) are observed. We study the current and temperature dependences of the microwave voltage emission of spin-valve nanopillars subjected to an in-plane magnetic field and a perpendicular-to-plane current. Despite the complex multilayer geometry, clear microwave emission is shown to be possible and spectral lines as narrow as 3.8 MHz (at 150 K) are observed. △ Less

Submitted 10 March, 2006; originally announced March 2006.

Comments: To appear in Applied Physics Letters

Spin torque, tunnel-current spin polarization and magnetoresistance in MgO magnetic tunnel junctions

Authors: G. D. Fuchs, J. A. Katine, S. I. Kiselev, D. Mauri, K. S. Wooley, D. C. Ralph, R. A. Buhrman

Abstract: We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We… ▽ More We examine the spin torque (ST) response of magnetic tunnel junctions (MTJs) with ultra-thin MgO tunnel barrier layers to investigate the relationship between the spin-transfer torque and the tunnel magnetoresistance (TMR) under finite bias. We find that the spin torque per unit current exerted on the free layer decreases by less than 10% over a bias range where the TMR decreases by over 40%. We examine the implications of this result for various spin-polarized tunneling models and find that it is consistent with magnetic-state-dependent effective tunnel decay lengths. △ Less

Submitted 28 October, 2005; originally announced October 2005.

Comments: 4 pages, 3 figures

Angular Dependence of Spin-Torque Critical Currents in CPP-GMR Read Heads

Authors: Neil Smith, J. . A. Katine, Jeffrey R. Childress, Matthew J. Carey

Abstract: This paper derives expressions for the critical current at the onset of spin-transfer-torque (STT) instability in CPP-GMR read heads, as a function of the relative angle (theta) between the free and reference layer magnetizations. Including a general angular dependent STT coefficient B(q=cos(theta)) exclusive of the angular momentum conserving sin(theta) factor, the critical current is found to… ▽ More This paper derives expressions for the critical current at the onset of spin-transfer-torque (STT) instability in CPP-GMR read heads, as a function of the relative angle (theta) between the free and reference layer magnetizations. Including a general angular dependent STT coefficient B(q=cos(theta)) exclusive of the angular momentum conserving sin(theta) factor, the critical current is found to depend on both B(q) and dB/dq in the non-collinear case |q| < 1. The paper also details the experimental measurement of the angular dependent critical currents on 50-nm sized CPP-GMR devices with synthetic antiferromagnet pinned layers, and fabricated using e-beam lithography. The measurements are consistent with prior theoretical models of the form B(q) ~ 1/[1+cnst*q], and indicate perhaps unanticipated implications for read head operation due to the critical current dependence on dB/dq. △ Less

Submitted 5 May, 2005; originally announced May 2005.

Comments: 6 pages, 8 figures. This work was presented as paper FB-04 at Intermag'05 (Nagoya, Japan), is presently accepted for publication, and should appear (in possibly revised form) with the Intermag'05 conference proceedings in the IEEE Transactions on Magnetics

Thermal Effects on the Magnetic Field Dependence of Spin Transfer Induced Magnetization Reversal

Authors: D. Lacour, J. A. Katine, N. Smith, M. J. Carey, J. R. Childress

Abstract: We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes dipole coupling to the free layer and field induced rotation of the reference layer. We find that the critical currents for spin transfer induced magnetization… ▽ More We have developed a self-aligned, high-yield process to fabricate CPP (current perpendicular to the plane) magnetic sensors of sub 100 nm dimensions. A pinned synthetic antiferromagnet (SAF) is used as the reference layer which minimizes dipole coupling to the free layer and field induced rotation of the reference layer. We find that the critical currents for spin transfer induced magnetization reversal of the free layer vary dramatically with relatively small changes the in-plane magnetic field, in contrast to theoretical predictions based on stability analysis of the Gilbert equations of magnetization dynamics including Slonczewski-type spin-torque terms. The discrepancy is believed due to thermal fluctuations over the time scale of the measurements. Once thermal fluctuations are taken into account, we find good quantitative agreement between our experimental results and numerical simulations. △ Less

Submitted 23 June, 2004; originally announced June 2004.

Comments: 14 pages, 4 figures, Submitted to Appl. Phys. Lett., Comparison of some of these results with a model described by N. Smith in cond-mat/0406486