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Optical quality assurance of GEM foils
Authors:
T. Hildén,
E. Brücken,
J. Heino,
M. Kalliokoski,
A. Karadzhinova,
R. Lauhakangas,
E. Tuominen,
R. Turpeinen
Abstract:
An analysis software was developed for the high aspect ratio optical scanning system in the Detec- tor Laboratory of the University of Helsinki and the Helsinki Institute of Physics. The system is used e.g. in the quality assurance of the GEM-TPC detectors being developed for the beam diagnostics system of the SuperFRS at future FAIR facility. The software was tested by analyzing five CERN standar…
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An analysis software was developed for the high aspect ratio optical scanning system in the Detec- tor Laboratory of the University of Helsinki and the Helsinki Institute of Physics. The system is used e.g. in the quality assurance of the GEM-TPC detectors being developed for the beam diagnostics system of the SuperFRS at future FAIR facility. The software was tested by analyzing five CERN standard GEM foils scanned with the optical scanning system. The measurement uncertainty of the diameter of the GEM holes and the pitch of the hole pattern was found to be 0.5 μm and 0.3 μm, respectively. The software design and the performance are discussed. The correlation between the GEM hole size distribution and the corresponding gain variation was studied by comparing them against a detailed gain mapping of a foil and a set of six lower precision control measurements. It can be seen that a qualitative estimation of the behavior of the local variation in gain across the GEM foil can be made based on the measured sizes of the outer and inner holes.
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Submitted 21 April, 2017;
originally announced April 2017.
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A gaseous proportional counter built from a conventional aluminium beverage can
Authors:
Alexander Winkler,
Aneliya Karadzhinova,
Timo Hildén,
Francisco Garcia,
Giacomo Fedi,
Francesco Devoto,
Erik J. Brücken
Abstract:
The gaseous proportional counter is a device that can be used to detect ionizing radiation. These devices can be as simple as a cylindrical cathode and a very thin anode wire centered along its axis. By applying a high voltage, a strong electric field is generated close to the anode wire. Ion-pairs, generated by passing ionizing radiation, create avalanches once they drift into the strong electric…
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The gaseous proportional counter is a device that can be used to detect ionizing radiation. These devices can be as simple as a cylindrical cathode and a very thin anode wire centered along its axis. By applying a high voltage, a strong electric field is generated close to the anode wire. Ion-pairs, generated by passing ionizing radiation, create avalanches once they drift into the strong electric field region near the anode. The electrical charges created by the avalanche generate an observable signal which is proportional to the energy loss of the incoming radiation. We discuss the construction of such a device. Our detector was built from an ordinary aluminium beverage can and uses a common electric wire strand as the anode. The construction of this detector offers students at universities or technically oriented high schools a detailed understanding of the design and operation of gaseous radiation detectors. The equipment required to complete the project should be available at most institutions.
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Submitted 2 February, 2024; v1 submitted 8 September, 2015;
originally announced September 2015.
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Processing and characterization of epitaxial GaAs radiation detectors
Authors:
X. Wu,
T. Peltola,
T. Arsenovich,
A. Gädda,
J. Härkönen,
A. Junkes,
A. Karadzhinova,
P. Kostamo,
H. Lipsanen,
P. Luukka,
M. Mattila,
S. Nenonen,
T. Riekkinen,
E. Tuominen,
A. Winkler
Abstract:
GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase…
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GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 $μ\textrm{m}$ - 130 $μ\textrm{m}$ thick epitaxial absorption volume. Thick undoped and heavily doped p$^+$ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 $μ\textrm{m}$/h. The GaAs p$^+$/i/n$^+$ detectors were characterized by Capacitance Voltage ($CV$), Current Voltage ($IV$), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage ($V_{\textrm{fd}}$) of the detectors with 110 $μ\textrm{m}$ epi-layer thickness is in the range of 8 V - 15 V and the leakage current density is about 10 nA/cm$^2$. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.
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Submitted 13 March, 2015;
originally announced March 2015.
