-
Progress in cooling nanoelectronic devices to ultra-low temperatures
Authors:
A. T. Jones,
C. P. Scheller,
J. R. Prance,
Y. B. Kalyoncu,
D. M. Zumbühl,
R. P. Haley
Abstract:
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the low…
▽ More
Here we review recent progress in cooling micro/nanoelectronic devices significantly below 10 mK. A number of groups worldwide are working to produce sub-millikelvin on-chip electron temperatures, motivated by the possibility of observing new physical effects and improving the performance of quantum technologies, sensors and metrological standards. The challenge is a longstanding one, with the lowest reported on-chip electron temperature having remained around 4 mK for more than 15 years. This is despite the fact that microkelvin temperatures have been accessible in bulk materials since the mid 20th century. In this review we describe progress made in the last five years using new cooling techniques. Developments have been driven by improvements in the understanding of nanoscale physics, material properties and heat flow in electronic devices at ultralow temperatures, and have involved collaboration between universities and institutes, physicists and engineers. We hope that this review will serve as a summary of the current state-of-the-art, and provide a roadmap for future developments. We focus on techniques that have shown, in experiment, the potential to reach sub-millikelvin electron temperatures. In particular, we focus on on-chip demagnetisation refrigeration. Multiple groups have used this technique to reach temperatures around 1 mK, with a current lowest temperature below 0.5 mK.
△ Less
Submitted 8 June, 2020; v1 submitted 21 January, 2020;
originally announced January 2020.
-
Characterization of Hydrogen Plasma Defined Graphene Edges
Authors:
Mirko K. Rehmann,
Yemliha B. Kalyoncu,
Marcin Kisiel,
Nikola Pascher,
Franz J. Giessibl,
Fabian Muller,
Kenji Watanabe,
Takashi Taniguchi,
Ernst Meyer,
Ming-Hao Liu,
Dominik M. Zumbuhl
Abstract:
We investigate the quality of hydrogen plasma defined graphene edges by Raman spectroscopy, atomic resolution AFM and low temperature electronic transport measurements. The exposure of graphite samples to a remote hydrogen plasma leads to the formation of hexagonal shaped etch pits, reflecting the anisotropy of the etch. Atomic resolution AFM reveals that the sides of these hexagons are oriented a…
▽ More
We investigate the quality of hydrogen plasma defined graphene edges by Raman spectroscopy, atomic resolution AFM and low temperature electronic transport measurements. The exposure of graphite samples to a remote hydrogen plasma leads to the formation of hexagonal shaped etch pits, reflecting the anisotropy of the etch. Atomic resolution AFM reveals that the sides of these hexagons are oriented along the zigzag direction of the graphite crystal lattice and the absence of the D-peak in the Raman spectrum indicates that the edges are high quality zigzag edges. In a second step of the experiment, we investigate hexagon edges created in single layer graphene on hexagonal boron nitride and find a substantial D-peak intensity. Polarization dependent Raman measurements reveal that hydrogen plasma defined edges consist of a mixture of zigzag and armchair segments. Furthermore, electronic transport measurements were performed on hydrogen plasma defined graphene nanoribbons which indicate a high quality of the bulk but a relatively low edge quality, in agreement with the Raman data. These findings are supported by tight-binding transport simulations. Hence, further optimization of the hydrogen plasma etching technique is required to obtain pure crystalline graphene edges.
△ Less
Submitted 16 March, 2019;
originally announced March 2019.
-
Anisotropic Etching of Graphite and Graphene in a Remote Hydrogen Plasma
Authors:
Dorothee Hug,
Simon Zihlmann,
Mirko K. Rehmann,
Yemliha B. Kalyoncu,
Timothy N. Camenzind,
Laurent Marot,
Kenji Watanabe,
Takashi Taniguchi,
Dominik M. Zumbühl
Abstract:
We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two distinct plasma regimes: the direct and the remote plasma regime. Graphite surfaces exposed directly to the hydrogen plasma exhibit numerous etch p…
▽ More
We investigate the etching of a pure hydrogen plasma on graphite samples and graphene flakes on SiO$_2$ and hexagonal Boron-Nitride (hBN) substrates. The pressure and distance dependence of the graphite exposure experiments reveals the existence of two distinct plasma regimes: the direct and the remote plasma regime. Graphite surfaces exposed directly to the hydrogen plasma exhibit numerous etch pits of various size and depth, indicating continuous defect creation throughout the etching process. In contrast, anisotropic etching forming regular and symmetric hexagons starting only from preexisting defects and edges is seen in the remote plasma regime, where the sample is located downstream, outside of the glowing plasma. This regime is possible in a narrow window of parameters where essentially all ions have already recombined, yet a flux of H-radicals performing anisotropic etching is still present. At the required process pressures, the radicals can recombine only on surfaces, not in the gas itself. Thus, the tube material needs to exhibit a sufficiently low H radical recombination coefficient, such a found for quartz or pyrex. In the remote regime, we investigate the etching of single layer and bilayer graphene on SiO$_2$ and hBN substrates. We find isotropic etching for single layer graphene on SiO$_2$, whereas we observe highly anisotropic etching for graphene on a hBN substrate. For bilayer graphene, anisotropic etching is observed on both substrates. Finally, we demonstrate the use of artificial defects to create well defined graphene nanostructures with clean crystallographic edges.
△ Less
Submitted 14 March, 2017;
originally announced March 2017.
