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Role of microstructure and structural disorder on tribological properties of polycrystalline diamond films
Authors:
P. K. Ajikumar,
K. Ganesan,
N. Kumar,
T. R. Ravindran,
S. Kalavathi,
M. Kamruddin
Abstract:
Polycrystalline diamond films with systematic change in microstructure that varies from microcrystalline to nanocrystalline structure are synthesized on Si by hot filament chemical vapor deposition. The morphology and structural properties of the grown diamond films are analyzed using field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffraction and Raman sp…
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Polycrystalline diamond films with systematic change in microstructure that varies from microcrystalline to nanocrystalline structure are synthesized on Si by hot filament chemical vapor deposition. The morphology and structural properties of the grown diamond films are analyzed using field emission scanning electron microscope (FESEM), atomic force microscope (AFM), X-ray diffraction and Raman spectroscopy. The average roughness and grain size of the diamond films decrease with increase in CH4 to H2 ratio from 0.5 to 3 %. Also, structural disorder in these diamond films increases with decrease in grain size as evidenced from Raman spectroscopy. The coefficient of friction (CoF) is found to be very low for all the films. However, the average CoF is found to increase from 0.011 +/-0.005 to 0.03 +/- 0.015 as the grain size decrease from ~ 1 micron down to ~20 nm. Post analysis of wear track by FESEM, AFM based nanoscale friction and Raman spectroscopy reveal that microcrystalline diamond undergoes shear induced amorphization with negligible wear rate while nanocrystalline diamond films undergo shear induced plastic deformation without amorphization. A comprehensive mechanism for the observed CoF is discussed in the framework of microstructure, structural disorder and shear induced tribo-chemical reactions at the sliding interface.
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Submitted 9 January, 2019;
originally announced January 2019.
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Phonon confinement and substitutional disorder in Cd1-xZnxS Nanocrystals
Authors:
Satyaprakash Sahoo,
S. Dhara,
V. Sivasubramanian,
S. Kalavathi,
A. K. Arora
Abstract:
1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1-LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one mode behavior. On the other hand, the line broadening is found to be much more than that can…
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1LO optical phonons in free-standing mixed Cd1-xZnxS nanocrystals, synthesized using chemical precipitation, are investigated using Raman spectroscopy. As expected for the nanocrystals, the 1-LO modes are found to appear at slightly lower wavenumbers than those in the bulk mixed crystals and exhibit one mode behavior. On the other hand, the line broadening is found to be much more than that can be accounted on the basis of phonon confinement.
From the detailed line shape analysis it turns out that the substitutional disorder in the mixed crystals contributes much more to the line broadening than the phonon confinement. The linewidth arising from these mechanisms are also extracted from the analysis.
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Submitted 2 May, 2009;
originally announced May 2009.
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Synthesis, characterization and low temperature studies of iron chalcogenide superconductors
Authors:
J. Janaki,
T. Geetha Kumary,
Awadhesh Mani,
S. Kalavathi,
G V R Reddy,
G. V. Narasimha Rao,
A. Bharathi
Abstract:
We have synthesized tetragonal iron selenide and telluride superconductors through solid state reaction at 450deg.C and 550deg.C respectively. These synthesis temperatures have been established by optimization. Electrical resistivity and magnetic susceptibility measurements (4.2-300 K) confirm superconductivity with Tc of around 8.5 K in all selenide samples of nominal composition Fe1+deltaSe (d…
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We have synthesized tetragonal iron selenide and telluride superconductors through solid state reaction at 450deg.C and 550deg.C respectively. These synthesis temperatures have been established by optimization. Electrical resistivity and magnetic susceptibility measurements (4.2-300 K) confirm superconductivity with Tc of around 8.5 K in all selenide samples of nominal composition Fe1+deltaSe (delta=0.02-0.22). However, Scanning Electron Microscopy/ Energy Dispersive Spectroscopy studies clearly indicate that the actual stoichiometric ratio of Fe : Se for all the samples synthesized is around 1:1. Also all the samples exhibit identical phase transition temperatures from tetragonal to orthorhombic structure below ~ 100 K implying identical phase composition. The partial substitution of Se by Te leads to an enhancement of Tc to ~ 13 K. The non-superconducting telluride Fe1.09Te exhibits a metal-insulator phase transition at ~ 82 K. Substitution studies of this telluride system by S and Si have in addition been carried out to investigate if chemical pressure induces superconductivity.
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Submitted 24 April, 2009;
originally announced April 2009.
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Multi-phonon Raman scattering in GaN nanowires
Authors:
S. Dhara,
Sharat Chandra,
G. Mangamma,
S. Kalavathi,
P. Shankar,
K. G. M. Nair,
A. K. Tyagi,
C. W. Hsu,
C. C. Kuo,
L. C. Chen,
K. H. Chen,
K. K. Sriram
Abstract:
UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant…
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UV Raman scattering studies show longitudinal optical (LO) mode up to 4th order in wurtzite GaN nanowire system. Frohlich interaction of electron with the long range electrostatic field of ionic bonded GaN gives rise to enhancement in LO phonon modes. Good crystalline quality, as indicated by the crystallographic as well as luminescence studies, is thought to be responsible for this significant observation. Calculated size dependence, incorporating size corrected dielectric constants, of electron-phonon interaction energy agrees well with measured values and also predict stronger interaction energy than that of the bulk for diameter below ~3 nm.
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Submitted 16 August, 2007;
originally announced August 2007.
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Nitrogen ion beam synthesis of InN in InP (100) at elevated temperature
Authors:
S. Dhara,
P. Magudapathy,
R. Kesavamoorthy,
S. Kalavathi,
V. S. Sastry,
K. G. M. Nair,
G. M. Hsu,
L. C. Chen,
K. H. Chen,
K. Santhakumar,
T. Soga
Abstract:
InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at tem…
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InN phase is grown in crystalline InP(100) substrates by 50 keV N+ implantation at an elevated temperature of 400 deg C followed by annealing at 525 deg C in N2 ambient. Crystallographic structural and Raman scattering studies are performed for the characterization of grown phases. Temperature- and power-dependent photoluminescence studies show direct band-to-band transition peak ~1.06 eV at temperatures <=150K. Implantations at an elevated temperature with a low ion beam current and subsequent low temperature annealing step are found responsible for the growth of high-quality InN phase.
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Submitted 16 August, 2007;
originally announced August 2007.
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Optical characterization of GaN by N+ implantation into GaAs at elevated temperature
Authors:
S. Dhara,
P. Magudapathy,
R. Kesavamoorthy,
S. Kalavathi,
K. G. M. Nair,
G. M. Hsu,
L. C. Chen,
K. H. Chen,
K. Santhakumar,
T. Soga
Abstract:
Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition…
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Both hexagonal wurtzite and cubic zinc blend GaN phases were synthesized in GaAs by 50 keV N+ implantation at 400 deg C and subsequent annealing at 900 deg C for 15 min in N2 ambient. Crystallographic structural and Raman scattering studies revealed that GaN phases were grown for fluence above 2x1017 cm-2. Temperature-dependent photoluminescence study showed sharp direct band-to-band transition peak ~3.32 eV at temperature <= 200K. The intermediate bandgap value, with respect to ~3.4 eV for hexagonal and ~3.27 eV for cubic phases of GaN is an indicative for the formation of mixed hexagonal and cubic phases.
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Submitted 16 August, 2007;
originally announced August 2007.
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Effect of Mn substitution on the delicate balance between structure and properties of Gd1.4Ce0.6Sr2RuCu2O10
Authors:
S. Kalavathi,
J. Janaki,
T. N. Sairam,
Awadhesh Mani,
R. Rawat,
V. Sankara Sastry
Abstract:
Some new members of a Ruthenocuprate (2212) series have been synthesized by Mn substitution for Ru in Gd1.4Ce0.6Sr2RuCu2O10 . Characterisation by XRD phase analysis followed by Rietveld refinement has been carried out. IR spectroscopy studies and Rietveld refinements are consistent with substitution of Mn at Ru site. XRD studies indicate changes in structural features on substitution including a…
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Some new members of a Ruthenocuprate (2212) series have been synthesized by Mn substitution for Ru in Gd1.4Ce0.6Sr2RuCu2O10 . Characterisation by XRD phase analysis followed by Rietveld refinement has been carried out. IR spectroscopy studies and Rietveld refinements are consistent with substitution of Mn at Ru site. XRD studies indicate changes in structural features on substitution including a significant change in lattice parameter for a very low substitution level (1mole% of Ru). The pristine compound shows coexistence of superconductivity and magnetism. Four probe resistivity studies indicate a semiconductor like upturn in resistivity and absence of superconductivity even for Mn substitution levels as low as 1 mole%. a. c. susceptibility measurements show a progressive suppression of the magnetic transition temperature as well as a smearing of the magnetic transition as a function of Mn substitution. Possible reasons for absence of superconductivity have been discussed.
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Submitted 26 September, 2005;
originally announced September 2005.
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Blue luminescence of Au nanoclusters embedded in silica matrix
Authors:
S. Dhara,
Sharat Chandra,
P. Magudapathy,
S. Kalavathi,
B. K. Panigrahi,
K. G. M. Nair,
V. S. Sastry,
C. W. Hsu,
C. T. Wu,
K. H. Chen,
L. C. Chen
Abstract:
Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Ra…
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Photoluminescence study using the 325 nm He-Cd excitation is reported for the Au nanoclusters embedded in SiO2 matrix. Au clusters are grown by ion beam mixing with 100 KeV Ar+ irradiation on Au [40 nm]/SiO2 at various fluences and subsequent annealing at high temperature. The blue bands above ~3 eV match closely with reported values for colloidal Au nanoclusters and supported Au nanoislands. Radiative recombination of sp electrons above Fermi level to occupied d-band holes are assigned for observed luminescence peaks. Peaks at 3.1 eV and 3.4 eV are correlated to energy gaps at the X- and L-symmetry points, respectively, with possible involvement of relaxation mechanism. The blue shift of peak positions at 3.4 eV with decreasing cluster size is reported to be due to the compressive strain in small clusters. A first principle calculation based on density functional theory using the full potential linear augmented plane wave plus local orbitals (FP-LAPW+LO) formalism with generalized gradient approximation (GGA) for the exchange correlation energy is used to estimate the band gaps at the X- and L-symmetry points by calculating the band structures and joint density of states (JDOS) for different strain values in order to explain the blueshift of ~0.1 eV with decreasing cluster size around L-symmetry point.
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Submitted 29 September, 2004;
originally announced September 2004.
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Acoustic vibrations of a silica-embedded gold nanoparticle: elastic anisotropy
Authors:
Daniel B. Murray,
S. Dhara,
T. R. Ravindran,
K. G. M. Nair,
S. Kalavathi,
Lucien Saviot,
Eugene Duval
Abstract:
Spherical gold nanoclusters are grown by 1.8 MeV Au++ ion implantation into an amorphous silica matrix and subsequent air annealing at 873 K. Ultraviolet and visible light absorption confirms the presence of a dipolar surface plasmon peak at the expected location for a gold sphere in silica. Grazing incidence X-ray diffraction shows peaks corresponding to fcc gold with lattice spacing close to t…
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Spherical gold nanoclusters are grown by 1.8 MeV Au++ ion implantation into an amorphous silica matrix and subsequent air annealing at 873 K. Ultraviolet and visible light absorption confirms the presence of a dipolar surface plasmon peak at the expected location for a gold sphere in silica. Grazing incidence X-ray diffraction shows peaks corresponding to fcc gold with lattice spacing close to that of bulk gold, as well as allowing estimation of cluster size using Scherrer's formula. Low frequency Raman scattering reveals a relatively narrow peak, suggesting a narrow distribution of nanocrystal diameters. Acoustic phonon frequencies corresponding to the spheroidal quadrupolar vibrations of a continuum sphere with the anisotropic elasticity of gold are calculated using a novel method of molecular dynamics and extrapolation to the continuum limit using relatively small numbers of point masses. The study confirms high energy ion implantation as a method capable of producing gold nanocrystals with spherical shape and well controlled size.
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Submitted 21 July, 2004;
originally announced July 2004.
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Crystal structure, superconductivity and magnetic properties of the superconducting ferromagnets Gd1.4-xDyxCe0.6Sr2RuCu2O10 (x=0 - 0.6)
Authors:
S. Kalavathi,
J. Janaki,
G. V. N. Rao,
V. Sankara Sastry,
Y. Hariharan
Abstract:
The structural, electrical and magnetic properties of the superconducting ferromagnets, Gd1.4-xDyxCe0.6Sr2RuCu2O10 (x=0-0.6) are systematically investigated as a function of Dy doping and temperature. These compounds are characterised by high temperature superconductivity (Tc ranging from 20-40 K depending upon the Dy content) coexisting with weak ferromagnetism with two magnetic transitions (TM…
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The structural, electrical and magnetic properties of the superconducting ferromagnets, Gd1.4-xDyxCe0.6Sr2RuCu2O10 (x=0-0.6) are systematically investigated as a function of Dy doping and temperature. These compounds are characterised by high temperature superconductivity (Tc ranging from 20-40 K depending upon the Dy content) coexisting with weak ferromagnetism with two magnetic transitions (TM2 ranging from 95-106 K and TM1 around 120 K). Doping with Dy gives no significant structural changes except for a minor change in the c/a ratio. However the superconducting transition temperature is significantly suppressed and magnetic ordering temperature enhanced on Dy doping. These effects are described and discussed.
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Submitted 19 July, 2002;
originally announced July 2002.
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Carbon solubility and superconductivity in MgB2
Authors:
A. Bharathi,
S. Jemima Balaselvi,
S. Kalavathi,
G. L. N. Reddy,
V. Sankara Sastry,
Y. Hariharan,
T. S. Radhakrishnan
Abstract:
Successful replacement of B by C in the series MgB2-xCx for values of x upto 0.3 are reported. Resistivity and ac susceptibility measurements have been carried out in the samples. Solubility of carbon, inferred from the observed change in the lattice parameter with carbon content indicates that carbon substitutes upto x=0.30 into the MgB2 lattice. The superconducting transition temperature, TC m…
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Successful replacement of B by C in the series MgB2-xCx for values of x upto 0.3 are reported. Resistivity and ac susceptibility measurements have been carried out in the samples. Solubility of carbon, inferred from the observed change in the lattice parameter with carbon content indicates that carbon substitutes upto x=0.30 into the MgB2 lattice. The superconducting transition temperature, TC measured both by zero resistivity and the onset of the diamagnetic signal shows a systematic decrease with increase in carbon content upto x=0.30, beyond which the volume fraction decreases drastically. The temperature dependence of resistivity in the normal state fits to the Bloch-Gruneisen formula for all the carbon compositions studied. The Debye temperatures, extracted from the fit is seen to decrease with carbon content from 900K to 525K, whereas the electron-phonon interaction parameter, obtained from the McMillan equation using the measured TC and the Debye temperature, is seen to increase monotonically from 0.8 in MgB2 to 0.9 in the x=0.50 sample. The ratio of the resistivities between 300K and 40K versus TC is seen to follow the Testardi correlation for the C substituted samples. The decrease in TC is argued to mainly arise due to large decrease in the Debye temperature with C concentration and a decrease in the hole density of states at N(EF).
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Submitted 2 February, 2002;
originally announced February 2002.
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Infrared absorption in superconducting MgB2
Authors:
C. S. Sundar,
A. Bharathi,
M. Premila,
T. N. sairam,
S. Kalavathi,
G. L. N. Reddy,
V. S. Sastry,
Y. Hariharan,
T. S. Radhakrishnan
Abstract:
Infrared absorption measurements in the range of 125 to 700 cm^(-1) have been carried out as a function of temperature upto 5 K in MgB2. The absorption spectrum is characterised by a broad band centred at 485 cm^{-1}, with shoulders at 333 and 387 cm^{-1}. Studies on the temperature dependence of absorption, indicate that these modes initially harden with the lowering of temperature, and this tr…
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Infrared absorption measurements in the range of 125 to 700 cm^(-1) have been carried out as a function of temperature upto 5 K in MgB2. The absorption spectrum is characterised by a broad band centred at 485 cm^{-1}, with shoulders at 333 and 387 cm^{-1}. Studies on the temperature dependence of absorption, indicate that these modes initially harden with the lowering of temperature, and this trend is arrested at ~ 100 K, below which they soften. Further, in the case of the mode at 333 cm^{-1}, there is a distinct softening associated with the superconducting transition at 39 K. The implications of these experimental results in the context of superconductivity in MgB2 are discussed.
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Submitted 19 April, 2001;
originally announced April 2001.
