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Designs for programmable quantum resistance standards based on epitaxial graphene p-n junctions
Authors:
Jiuning Hu,
Albert F. Rigosi,
Mattias Kruskopf,
Yanfei Yang,
Bi-Yi Wu,
Jifa Tian,
Alireza R. Panna,
Hsin-Yen Lee,
Shamith U. Payagala,
George R. Jones,
Marlin E. Kraft,
Dean G. Jarrett,
Kenji Watanabe,
Takashi Taniguchi,
Randolph E. Elmquist,
David B. Newell
Abstract:
We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditio…
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We report the fabrication and measurement of top gated epitaxial graphene p-n junctions where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four-terminal longitudinal resistance across a single junction is well quantized at the von Klitzing constant R_K with a relative uncertainty of 10-7. After the exploration of numerous parameter spaces, we summarize the conditions upon which these devices could function as potential resistance standards. Furthermore, we offer designs of programmable electrical resistance standards over six orders of magnitude by using external gating.
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Submitted 10 January, 2022;
originally announced January 2022.
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Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
Authors:
E. J. Fox,
I. T. Rosen,
Yanfei Yang,
George R. Jones,
Randolph E. Elmquist,
Xufeng Kou,
Lei Pan,
Kang L. Wang,
D. Goldhaber-Gordon
Abstract:
In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic cur…
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In the quantum anomalous Hall effect, quantized Hall resistance and vanishing longitudinal resistivity are predicted to result from the presence of dissipationless, chiral edge states and an insulating 2D bulk, without requiring an external magnetic field. Here, we explore the potential of this effect in magnetic topological insulator thin films for metrological applications. Using a cryogenic current comparator system, we measure quantization of the Hall resistance to within one part per million and longitudinal resistivity under 10 m$Ω$ per square at zero magnetic field. Increasing the current density past a critical value leads to a breakdown of the quantized, low-dissipation state, which we attribute to electron heating in bulk current flow. We further investigate the pre-breakdown regime by measuring transport dependence on temperature, current, and geometry, and find evidence for bulk dissipation, including thermal activation and possible variable-range hopping.
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Submitted 4 October, 2017;
originally announced October 2017.
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Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Authors:
Yanfei Yang,
Guangjun Cheng,
Patrick Mende,
Irene G. Calizo,
Randall M. Feenstra,
Chiashain Chuang,
Chieh-Wen Liu,
Chieh-I Liu,
George R. Jones,
Angela R. Hight Walker,
Randolph E. Elmquist
Abstract:
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain.…
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Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (1900 °C). The precise quantized Hall resistance of Rxy = h/2e^2 is maintained up to record level of critical current Ixx = 0.72 mA at T = 3.1 K and 9 T in a device where Raman microscopy reveals low and homogeneous strain. Adsorption-induced molecular doping in a second device reduced the carrier concentration close to the Dirac point(n ~ 1E10 (1/cm^2)), where mobility of 43700 cm^2/Vs is measured over an area of 10 mm^2. Atomic force, confocal optical, and Raman microscopies are used to characterize the large-scale devices, and reveal improved SiC terrace topography and the structure of the graphene layer. Our results show that the structural uniformity of epitaxial graphene produced by face-to-graphite processing contributes to millimeter-scale transport homogeneity, and will prove useful for scientific and commercial applications.
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Submitted 24 June, 2016;
originally announced June 2016.
