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Evidence of the matrix effect on a compositionally graded oxide thin film
Authors:
J. Scola,
F. Jomard,
E. Loire,
J. Wolfman,
B. Negulescu,
G. Z. Liu,
M. -A. Pinault-Thaury
Abstract:
A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ of the top layer was made varying continuously from 0 to 1 along the width of the sample by combinatorial pulsed laser deposition. Prior to SIMS analysis, the composition gradient of Ba$_{1-x}$Sr$_x$TiO$_3$…
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A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ of the top layer was made varying continuously from 0 to 1 along the width of the sample by combinatorial pulsed laser deposition. Prior to SIMS analysis, the composition gradient of Ba$_{1-x}$Sr$_x$TiO$_3$ was quantitatively characterized by chemical characterizations including wavelength and energy dispersive X-ray spectroscopies. Even if the Ti content is constant into Ba$_{1-x}$Sr$_x$TiO$_3${}, its ionic yield exhibits an increasing trend as Ba is substituted by Sr. Such a phenomenon can be explained by the variation of the neighbouring atoms chemistry which affects the ionization probability of titanium during the sputtering process. In addition to the continuously varying composition, the oxide multilayer sample features sharp interfaces hence the in-depth resolution under our analysing conditions has been investigated too. The modelling of the interface crossing profiles reveals that the instrumental contribution to the profile broadening is as low as 5 nm.
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Submitted 5 March, 2025; v1 submitted 13 February, 2025;
originally announced February 2025.
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New insight into quantifying vacancy distribution in self-ion irradiated tungsten: a combined experimental and computational study
Authors:
Zhiwei Hu,
Jintong Wu,
François Jomard,
Fredric Granberg,
Marie-France Barthe
Abstract:
In this work, we propose a new approach based on positron annihilation spectroscopy to estimate the concentration of vacancy-type defects induced by self-ion irradiation in tungsten at room temperature, 500, and 700°C. Using experimental and Two-component density functional theory calculated annihilation characteristics of various vacancy clusters V$_{n}$ ($n$=1-65) and a positron trapping model a…
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In this work, we propose a new approach based on positron annihilation spectroscopy to estimate the concentration of vacancy-type defects induced by self-ion irradiation in tungsten at room temperature, 500, and 700°C. Using experimental and Two-component density functional theory calculated annihilation characteristics of various vacancy clusters V$_{n}$ ($n$=1-65) and a positron trapping model associated with the simulated annealing algorithm, vacancy cluster concentration distribution could be extracted from experimental data. The method was validated against simulation results for room-temperature irradiation and transmission electron microscopy observations for higher temperatures. After irradiation at 500 and 700°C, small clusters (<20 vacancies, ~0.85 nm) undetectable by TEM were unveiled, with concentrations exceeding 10$^{25}$ m$^{-3}$, significantly higher than the concentration of TEM-visible defects (10$^{24}$ m$^{-3}$). Moreover, incorporating an oxygen-vacancy complex is deemed necessary to accurately replicate experimental data in samples subjected to high-temperature irradiation.
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Submitted 20 November, 2024;
originally announced November 2024.
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Nitrogen investigation by SIMS in two wide band-gap semiconductors: Diamond and Silicon Carbide
Authors:
M. A. Pinault-Thaury,
Marie-Amandine Pinault-Thaury,
François Jomard
Abstract:
Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (that has reached 200 mm quite recently). Nitrogen impurities are often used in both materials for different purpose: increase the diamond growth rate or induce n-type conductivity in SiC. The determination of the nitrogen content by secon…
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Diamond and Silicon Carbide (SiC) are promising wide band-gap semiconductors for power electronics, SiC being more mature especially in term of large wafer size (that has reached 200 mm quite recently). Nitrogen impurities are often used in both materials for different purpose: increase the diamond growth rate or induce n-type conductivity in SiC. The determination of the nitrogen content by secondary ion mass spectrometry (SIMS) is a difficult task mainly because nitrogen is an atmospheric element for which direct monitoring of N$^\pm$ ions give no or a weak signal. With our standard diamond SIMS conditions, we investigate 12C14N-secondary ions under cesium primary ions by applying high mass resolution settings. Nitrogen depth-profiling of diamond and SiC (multi-) layers is then possible over several micrometer thick over reasonable time analysis duration. In a simple way and without notably modifying our usual analysis process, we found a nitrogen detection limit of $2\times 10^{17}$ at/cm$^3$ in diamond and $5\times10^{15}$ at/cm$^3$ in SiC.
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Submitted 26 November, 2021;
originally announced November 2021.
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Identification by deuterium diffusion of a nitrogen-related deep donor preventing the p-type doping of ZnO
Authors:
N. Temahuki,
F. Jomard,
A. Lusson,
I. Stenger,
S. Hassani,
J. Chevallier,
J. M. Chauveau,
C. Morhain,
J. Barjon
Abstract:
Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room…
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Deuterium diffusion is investigated in nitrogen-doped homoepitaxial ZnO layers. The samples were grown under slightly Zn-rich growth conditions by plasma-assisted molecular beam epitaxy on m-plane ZnO substrates and have a nitrogen content [N] varied up to 5x1018 at.cm-3 as measured by secondary ion mass spectrometry (SIMS). All were exposed to a radio-frequency deuterium plasma during 1h at room temperature. Deuterium diffusion is observed in all epilayers while its penetration depth decreases as the nitrogen concentration increases. This is a strong evidence of a diffusion mechanism limited by the trapping of deuterium on a nitrogen-related trap. The SIMS profiles are analyzed using a two-trap model including a shallow trap, associated with a fast diffusion, and a deep trap, related to nitrogen. The capture radius of the nitrogen-related trap is determined to be 20 times smaller than the value expected for nitrogen-deuterium pairs formed by coulombic attraction between D+ and nitrogen-related acceptors. The (N2)O deep donor is proposed as the deep trapping site for deuterium and accounts well for the small capture radius and the observed photoluminescence quenching and recovery after deuteration of the ZnO:N epilayers. It is also found that this defect is by far the N-related defect with the highest concentration in the studied samples.
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Submitted 9 March, 2021;
originally announced March 2021.
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Faraday-Rotation in Iron Garnet Films Beyond Elemental Substitutions
Authors:
Miguel Levy,
Olga V. Borovkova,
Colin Sheidler,
Brandon Blasiola,
Dolendra Karki,
François Jomard,
Mikhail A. Kozhaev,
Elena Popova,
Niels Keller,
Vladimir I. Belotelov
Abstract:
In previous decades significant efforts have been devoted to increasing the magneto-optical efficiency of iron garnet materials for the miniaturization of nonreciprocal devices such as isolators and circulators. Elemental substitutions or proper nano-structuring to benefit from optical resonances have been pursued. However, all these approaches still require film thicknesses of at least several te…
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In previous decades significant efforts have been devoted to increasing the magneto-optical efficiency of iron garnet materials for the miniaturization of nonreciprocal devices such as isolators and circulators. Elemental substitutions or proper nano-structuring to benefit from optical resonances have been pursued. However, all these approaches still require film thicknesses of at least several tens of microns to deliver useful device applications, and suffer from narrow bandwidths in the case of optical resonance effects. This Letter reports on a newly discovered enhancement of the Faraday Effect observed experimentally in nanoscale bismuth-substituted iron garnet films. It is shown here that this enhancement is not due to elemental substitution or compositional variations. Nor is it due to photon trapping or resonance effects. Comprehensive experimental and theoretical analysis of the Faraday rotation reveals a dramatic seven-fold amplification in the magneto-optic gyrotropy within only 2 nm of the air-surface interface, corresponding to just a couple of atomic monolayers as a result of symmetry-breaking at the air-film interface. This finding opens up an avenue to the application of monolayer magnetic garnets for the control of light.
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Submitted 16 February, 2019;
originally announced February 2019.
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The TRAMOS pixel as a photo-detection device: design, architecture and building blocks
Authors:
Nicolas T. Fourches,
Vishant Kumar,
Yves Serruys,
G. Gutierrez,
F. Leprêtre,
F. Jomard
Abstract:
The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate l…
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The deep trapping gate device concept for charged particle detection was recently introduced in Saclay/IRFU. It is based on an n-MOS structure in which a buried gate, located below the n-channel, collects carriers which are generated by ionizing particles. They deposit their energy in a volume which extends in the bulk, below the buried gate. The n-channel device is based on holes in-buried gate localization. Source-drain current modulation occurs, measurable during readout. The buried gate (Deep Trapping Gate or DTG) contains deep level centers which can be introduced during process or may be made with a Quantum Well. The device can be scaled down providing a micron range resolution. The proof of principle for such a device was verified using 2D device and process simulations. Work under way focusses on the study of building blocks. In this contribution, the pixel proof of design, using existing fabrication techniques will be discussed first. The use of this pixel for photon imaging will be discussed
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Submitted 23 October, 2017;
originally announced October 2017.
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Limits in point to point resolution of MOS (Metal-Oxide-Semiconductor) based pixels detector arrays
Authors:
Nicolas Fourches,
Xavier Coppolani,
Daniel Desforge,
Mariam Kebbiri,
Vishant Kumar,
Yves Serruys,
Gaêlle Gutierrez,
Frederic Leprêtre,
François Jomard
Abstract:
In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pix…
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In high energy physics point to point resolution is a key prerequisite for particle detector pixel arrays. Current and future experiments require the development of inner-detectors able to resolve the tracks of particles down to the micron range. Present-day technologies, although not fully implemented in actual detectors can reach a 5 micometer limit, based on statistical measurements, with a pixel-pitch in the 10 micrometer range. Attempts to design small pixels based on SOI (Silicon On Insulator) technology will be briefly recalled here. This paper is devoted to the evaluation of the building blocks with regard to their use in pixel arrays for the accurate tracking of the charged particles. We will make here a simulations based quantitative evaluation of the physical limits in the pixel size. A design based on CMOS (Complementary Metal-Oxide-Semiconductor) compatible technologies that allows a reduction of the pixel size down to the sub-micronmeter range is introduced. Its physical principle relies on a buried carrier-localizing collecting gate. The fabrication process needed by this pixel design can be based on existing process steps used in silicon microelectronics. The pixel characteristics will be discussed as well as the design of pixel arrays. The existing bottlenecks and how to overcome them will be discussed in the light of recent ion implantation and material characterization.
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Submitted 5 February, 2018; v1 submitted 28 August, 2017;
originally announced August 2017.
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Laboratory analogues simulating Titan's atmospheric aerosols: Compared chemical compositions of grains and thin films
Authors:
N. Carrasco,
F. Jomard,
J. Vigneron,
A. Etcheberry,
G. Cernogora
Abstract:
Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan atmosphere. The aim of the present study is to address if these two sor…
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Two sorts of solid organic samples can be produced in laboratory experiments simulating Titan atmospheric reactivity: grains in the volume and thin films on the reactor walls. We expect that grains are more representative of Titan atmospheric aerosols, but films are used to provide optical indices for radiative models of Titan atmosphere. The aim of the present study is to address if these two sorts of analogues are chemically equivalent or not, when produced in the same N2-CH4 plasma discharge. The chemical compositions of both these materials are measured by using elemental analysis, XPS analysis and Secondary Ion Mass Spectrometry. The main parameter probed is the CH4 N2 ratio to explore various possible chemical regimes. We find that films are homogeneous but significantly less rich in nitrogen and hydrogen than grains produced in the same experimental conditions. This surprising difference in their chemical compositions could be explained by the efficient etching occurring on the films, which stay in the discharge during the whole plasma duration, whereas the grains are ejected after a few minutes. The higher nitrogen content in the grains possibly involves a higher optical absorption than the one measured on the films, with a possible impact on Titan radiative models.
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Submitted 4 May, 2017;
originally announced May 2017.
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Interplay between antiferrodistortive, ferroelectric and superconducting instabilities in Sr_{1-x}Ca_{x}$TiO_{3-δ}
Authors:
B. S. de Lima,
M. S. da Luz,
F. S. Oliveira,
L. M. S. Alves,
C. A. M. dos Santos,
F. Jomard,
Y. Sidis,
P. Bourges,
S. Harms,
C. P. Grams,
J. Hemberger,
X. Lin,
B. Fauque,
K. Behnia
Abstract:
SrTiO$_{3}$ undergoes a cubic-to-tetragonal phase transition at 105K. This antiferrodistortive transition is believed to be in competition with incipient ferroelectricity. Substituting strontium by isovalent calcium induces a ferroelectric order. Introducing mobile electrons to the system by chemical non-isovalent doping, on the other hand, leads to the emergence of a dilute metal with a supercond…
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SrTiO$_{3}$ undergoes a cubic-to-tetragonal phase transition at 105K. This antiferrodistortive transition is believed to be in competition with incipient ferroelectricity. Substituting strontium by isovalent calcium induces a ferroelectric order. Introducing mobile electrons to the system by chemical non-isovalent doping, on the other hand, leads to the emergence of a dilute metal with a superconducting ground state. The link between superconductivity and the other two instabilities is an open question, which gathers momentum in the context of the growing popularity of the paradigm linking unconventional superconductors and quantum critical points. We present a set of specific-heat, neutron-scattering and dielectric permittivity and polarization measurements on Sr$_{1-x}$Ca$_{x}$TiO$_{3}$ ($0<x<0.009$) and a low-temperature electric conductivity in Sr$_{0.9978}$Ca$_{0.0022}$TiO$_{3-δ}$. Calcium substitution was found to enhance the transition temperature for both anti-ferrodistortive and ferroelectric transitions. Moreover, we find that Sr$_{0.9978}$Ca$_{0.0022}$TiO$_{3-δ}$ has a superconducting ground state. The critical temperature in this rare case of a superconductor with a ferroelectric parent, is slightly lower than in SrTiO$_{3-δ}$ of comparable carrier concentration. A three-dimensional phase diagram for Sr$_{1-x}$Ca$_{x}$TiO$_{3-δ}$ tracking the three transition temperatures as a function of x and $δ$ results from this study, in which ferroelectric and superconducting ground states are not immediate neighbours.
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Submitted 27 October, 2014;
originally announced October 2014.
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Multiple nodeless superconducting gaps in optimally-doped SrTi$_{1-x}$Nb$_{x}$O$_{3}$
Authors:
Xiao Lin,
Adrien Gourgout,
German Bridoux,
Francois Jomard,
Alexandre Pourret,
Benoit Fauque,
Dai Aoki,
Kamran Behnia
Abstract:
We present the first study of thermal conductivity in superconducting SrTi$_{1-x}$Nb$_{x}$O$_{3}$, sufficiently doped to be near its maximum critical temperature. The bulk critical temperature, determined by the jump in specific heat, occurs at a significantly lower temperature than the resistive T$_{c}$. Thermal conductivity, dominated by the electron contribution, deviates from its normal-state…
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We present the first study of thermal conductivity in superconducting SrTi$_{1-x}$Nb$_{x}$O$_{3}$, sufficiently doped to be near its maximum critical temperature. The bulk critical temperature, determined by the jump in specific heat, occurs at a significantly lower temperature than the resistive T$_{c}$. Thermal conductivity, dominated by the electron contribution, deviates from its normal-state magnitude at bulk T$_{c}$, following a Bardeen-Rickayzen-Tewordt (BRT) behavior, expected for thermal transport by Bogoliubov excitations. Absence of a T-linear term at very low temperatures rules out the presence of nodal quasi-particles. On the other hand, the field dependence of thermal conductivity points to the existence of at least two distinct superconducting gaps. We conclude that optimally-doped strontium titanate is a multigap nodeless superconductor.
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Submitted 8 September, 2014;
originally announced September 2014.
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Efficient photogeneration of charge carriers in silicon nanowires with a radial doping gradient
Authors:
D. H. K. Murthy,
T. Xu,
W. H. Chen,
J. Houtepen A.,
T. J. Savenije,
L. D. A. Siebbeles,
J. P. Nys,
Christophe Krzeminski,
Bruno Grandidier,
Didier Stiévenard,
Philippe Pareige,
F. Jomard,
Gilles Patriache,
O. I. Lebedev
Abstract:
From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities duri…
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From electrodeless time-resolved microwave conductivity measurements, the efficiency of charge carrier generation, their mobility, and decay kinetics on photo-excitation were studied in arrays of Si nanowires grown by the vapor-liquid-solid mechanism. A large enhancement in the magnitude of the photoconductance and charge carrier lifetime are found depending on the incorporation of impurities during the growth. They are explained by the internal electric field that builds up, due to a higher doped sidewalls, as revealed by detailed analysis of the nanowire morphology and chemical composition.
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Submitted 28 June, 2011;
originally announced June 2011.
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Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions
Authors:
Jean-Luc Maurice,
Gervasi Herranz,
Christian Colliex,
Isabelle Devos,
Cécile Carrétéro,
Agnès Barthelemy,
Karim Bouzehouane,
Stéphane Fusil,
Dominique Imhoff,
Éric Jacquet,
François Jomard,
Dominique Ballutaud,
Mario Basletic
Abstract:
At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope,…
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At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.
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Submitted 3 December, 2007;
originally announced December 2007.
